IDT IDT70T653MS12BC High-speed 2.5v 512k x 36 asynchronous dual-port static ram with 3.3v 0r 2.5v interface Datasheet

HIGH-SPEED 2.5V
512K x 36
ASYNCHRONOUS DUAL-PORT
STATIC RAM
WITH 3.3V 0R 2.5V INTERFACE
Features
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True Dual-Port memory cells which allow simultaneous
access of the same memory location
High-speed access
– Commercial: 10/12/15ns (max.)
– Industrial: 12ns (max.)
RapidWrite Mode simplifies high-speed consecutive write
cycles
Dual chip enables allow for depth expansion without
external logic
IDT70T653M easily expands data bus width to 72 bits or
more using the Busy Input when cascading more than one
device
Busy input for port contention management
Interrupt Flags
PRELIMINARY
IDT70T653M
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
Separate byte controls for multiplexed bus and bus
matching compatibility
Sleep Mode Inputs on both ports
Single 2.5V (±100mV) power supply for core
LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)
power supply for I/Os and control signals on each port
Includes JTAG functionality
Available in a 256-ball Ball Grid Array
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
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Functional Block Diagram
BE3L
BE 3R
BE2L
BE2R
BE1L
BE 1R
BE0L
BE0R
R/W L
R/WR
BB
EE
01
LL
CE0L
CE1L
BB
EE
23
LL
BBBB
EEEE
3210
R RRR
CE0R
CE1R
OEL
OER
Dout0-8_L
Dout0-8_R
Dout9-17_L
Dout9-17_R
Dout18-26_L Dout18-26_R
Dout27-35_L Dout27-35_R
512K x 36
MEMORY
ARRAY
I/O0L- I/O 35L
A18L
A0L
Di n_L
Address
Decoder
Di n_R
ADDR_L
CE0L
CE1L
OEL
R/WL
I/O 0R - I/O 35R
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
A18R
Address
Decoder
ADDR_R
OE R
CE0R
CE1R
A0R
TDI
JTAG
TD O
TC K
TMS
TRST
R/WR
BUSYL
BUSYR
SEMR
INT R(1)
SEM L
INTL(1)
ZZL(2)
ZZ
CONTROL
LOGIC
ZZ R(2)
NOTES:
1. INT is non-tri-state totem-pole outputs (push-pull).
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INTx and the sleep mode
pins themselves (ZZx) are not affected during sleep mode.
5679 drw 01
NOVEMBER 2003
1
©2003 Integrated Device Technology, Inc.
DSC-5679/2
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Description
The IDT70T653M is a high-speed 512K x 36 Asynchronous DualPort Static RAM. The IDT70T653M is designed to be used as a standalone 18874K-bit Dual-Port RAM. This device provides two independent
ports with separate control, address, and I/O pins that permit independent,
asynchronous access for reads or writes to any location in memory. An
automatic power down feature controlled by the chip enables (either CE0
or CE1) permit the on-chip circuitry of each port to enter a very low standby
power mode.
The IDT70T653M has a RapidWrite Mode which allows the designer
to perform back-to-back write operations without pulsing the R/W input
each cycle. This is especially significant at the 10ns cycle time of the
IDT70T653M, easing design considerations at these high performance
levels.
The 70T653M can support an operating voltage of either 3.3V or 2.5V
on one or both ports, controlled by the OPT pins. The power supply for
the core of the device (VDD) is at 2.5V.
2
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Pin Configuration(1,2,3)
70T653M BC
BC-256(4,5)
256-Pin BGA
Top View
10/07/03
A1
NC
B1
I/O18L
C1
A2
TDI
B2
NC
C2
A3
NC
B3
TDO
C3
I/O18R I/O19L VSS
D1
D2
D3
I/O20R I/O19R I/O20L
E1
E2
E3
A4
A5
A17L A14L
B4
A18L
C4
A16L
D4
VDD
E4
B5
A15L
C5
A13L
D5
F2
F3
F4
E5
F5
I/O23L I/O22R I/O23R VDDQL VDD
G1
G2
G3
G4
G5
I/O24R I/O24L I/O25L VDDQR VSS
H1
H2
H3
H4
H5
I/O26L I/O25R I/O26R VDDQR VSS
J1
J2
J3
J4
J5
I/O27L I/O28R I/O27R VDDQL ZZR
K1
K2
K3
K4
K5
I/O29R I/O29L I/O28L VDDQL VSS
L1
L2
L3
L4
L5
I/O30L I/O31R I/O30R VDDQR VDD
M1
M2
M3
M4
I/O32R I/O32L I/O31L VDDQR
N1
N2
N3
N4
A11L
B6
A12L
C6
A10L
D6
A7
A 8L
B7
A 9L
C7
A7L
D7
A8
A9
BE2L
B8
CE1L
B9
OEL
B10
CE0L R/WL
BE3L
C8
A10
C9
C10
A11
INTL
B11
NC
C11
A12
A5L
B12
A4L
C12
BE1L BE0L SEML BUSYL A6L
D8
D9
D10
D11
D12
A13
A2L
B13
A1L
C13
A3L
D13
M5
VDD
N5
E6
VDD
F6
NC
G6
VSS
H6
VSS
J6
VSS
K6
VSS
L6
NC
M6
VDD
N6
E7
VSS
F7
VSS
G7
VSS
H7
VSS
J7
VSS
K7
VSS
L7
VSS
M7
VSS
N7
E8
E9
VSS
F8
V SS
F9
V SS
VSS
G8
G9
VSS
H8
V SS
H9
VSS
J8
VSS
J9
VSS
K8
V SS
K9
VSS
L8
VSS
L9
VSS
M8
V SS
M9
VSS
N8
VSS
N9
E10
VSS
F10
VSS
G10
VSS
H10
V SS
J10
VSS
K10
VSS
L10
V SS
M10
VSS
N10
E11
VDD
F11
VSS
G11
VSS
H11
VSS
J11
VSS
K11
VSS
L11
VSS
M11
VDD
N11
E12
P2
P3
I/O35R I/O34L TMS
R1
I/O35L
T1
NC
R2
NC
T2
TCK
R3
P4
A16R
R4
TRST A18R
T3
NC
T4
A17R
A0L
B14
NC
C14
A15
NC
B15
I/O17L
C15
A16
NC
B16
NC
C16
OPTL I/O17R I/O16L
D14
D15
D16
E13
P5
A13R
R5
A15R
T5
A14R
P6
A10R
R6
A12R
T6
A11R
P7
A7R
R7
A9R
T7
A8R
P8
P9
P10
P11
BE1R BE0R SEMR BUSYR
R8
R9
R10
BE3R CE0R R/WR
T8
T9
T10
BE2R CE1R OER
R11
VSS
T11
INT R
E14
E15
E16
VDD VDDQR I/O13L I/O14L I/O14R
F12
F13
F14
F15
F16
VDD VDDQR I/O12R I/O13R I/O12L
G12
VSS
H12
VSS
J12
G13
G14
G15
G16
VDDQL I/O10L I/O11L I/O11R
H13
H14
VDDQL I/O9R
J13
J14
H15
H16
IO9L I/O10R
J15
J16
ZZL VDDQR I/O8R I/O7R I/O8L
K12
VSS
L12
VDD
M12
K13
K14
K15
K16
VDDQR I/O6R I/O6L I/O7L
L13
L14
VDDQL I/O5L
M13
M14
L15
L16
I/O4R I/O5R
M15
M16
VDD VDDQL I/O3R I/O3L I/O4L
N12
N13
I/O33L I/O34R I/O33R VDD VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDD
P1
A14
VDDQL VDDQL VDDQR VDDQR VDDQL VDDQL VDDQR VDDQR VDD I/O15R I/O15L I/O16R
I/O21R I/O21L I/O22L VDDQL VDD
F1
A6
P12
A6R
R12
A4R
T12
A5R
P13
A3R
R13
A1R
T13
A2R
N14
I/O2L
P14
N15
P15
I/O0L I/O0R
R14
OPTR
T14
A0R
N16
I/O1R I/O2R
R15
NC
T15
NC
P16
I/O1L
R16
NC
,
T16
NC
5679 drw 02f
NOTES:
1. All VDD pins must be connected to 2.5V power supply.
2. All VDDQ pins must be connected to appropriate power supply: 3.3V if OPT pin for that port is set to VDD (2.5V), and 2.5V if OPT pin for that port is
set to VSS (0V).
3. All VSS pins must be connected to ground supply.
4. Package body is approximately 17mm x 17mm x 1.4mm, with 1.0mm ball-pitch.
5. This package code is used to reference the package diagram.
3
,
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Pin Names
Left Port
Right Port
Names
CE0L, CE1L
CE0R, CE1R
Chip Enables (Input)
R/WL
R/WR
Read/Write Enable (Input)
OEL
OER
Output Enable (Input)
A0L - A18L
A0R - A18R
Address (Input)
I/O0L - I/O35L
I/O0R - I/O35R
Data Input/Output
SEML
SEMR
Semaphore Enable (Input)
INTL
INTR
Interrupt Flag (Output)
BUSYL
BUSYR
Busy Input
BE0L - BE3L
BE0R - BE3R
Byte Enables (9-bit bytes) (Input)
VDDQL
VDDQR
Power (I/O Bus) (3.3V or 2.5V)(1) (Input)
OPTL
OPTR
Option for selecting VDDQX(1,2) (Input)
ZZL
ZZR
Sleep Mode Pin(3) (Input)
VDD
Power (2.5V)(1) (Input)
VSS
Ground (0V) (Input)
TDI
Test Data Input
TDO
Test Data Output
TCK
Test Logic Clock (10MHz) (Input)
TMS
Test Mode Select (Input)
TRST
Reset (Initialize TAP Controller) (Input)
NOTES:
1. VDD, OPTX, and VDDQX must be set to appropriate operating levels prior to
applying inputs on I/OX.
2. OPTX selects the operating voltage levels for the I/Os and controls on that port.
If OPTX is set to VDD (2.5V), then that port's I/Os and controls will operate at 3.3V
levels and VDDQX must be supplied at 3.3V. If OPT X is set to VSS (0V), then that
port's I/Os and controls will operate at 2.5V levels and VDDQX must be supplied
at 2.5V. The OPT pins are independent of one another—both ports can operate
at 3.3V levels, both can operate at 2.5V levels, or either can operate at 3.3V
with the other at 2.5V.
3. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when
asserted. OPTx, INTx and the sleep mode pins themselves (ZZx) are not
affected during sleep mode. It is recommended that boundry scan not be operated
during sleep mode.
5679 tbl 01
4
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Truth Table I—Read/Write and Enable Control(1,2)
Byte 1
I/O9-17
Byte 0
I/O0-8
H
H
X
X
X
X
X
X
L
High-Z
High-Z
High-Z
High-Z
Deselected–Power Down
H
X
L
X
X
X
X
X
L
High-Z
High-Z
High-Z
High-Z
Deselected–Power Down
X
H
L
H
H
H
H
H
X
L
High-Z
High-Z
High-Z
High-Z
All Bytes Deselected
X
H
L
H
H
H
H
L
L
L
High-Z
High-Z
High-Z
DIN
Write to Byte 0 Only
X
H
L
H
H
H
L
H
L
L
High-Z
High-Z
DIN
High-Z
Write to Byte 1 Only
X
H
L
H
H
L
H
H
L
L
High-Z
DIN
High-Z
High-Z
Write to Byte 2 Only
X
H
L
H
L
H
H
H
L
L
DIN
High-Z
High-Z
High-Z
Write to Byte 3 Only
X
H
L
H
H
H
L
L
L
L
High-Z
High-Z
DIN
DIN
Write to Lower 2 Bytes Only
DIN
High-Z
High-Z
Write to Upper 2 bytes Only
X
X
BE3
BE2
BE1
BE0
ZZ
Byte 2
I/O18-26
CE 1
SEM
R/W
Byte 3
I/O27-35
CE 0
OE
MODE
X
H
L
H
L
L
H
H
L
L
DIN
X
H
L
H
L
L
L
L
L
L
DIN
DIN
DIN
DIN
Write to All Bytes
L
H
L
H
H
H
H
L
H
L
High-Z
High-Z
High-Z
DOUT
Read Byte 0 Only
L
H
L
H
H
H
L
H
H
L
High-Z
High-Z
DOUT
High-Z
Read Byte 1 Only
Read Byte 2 Only
L
H
L
H
H
L
H
H
H
L
High-Z
DOUT
High-Z
High-Z
L
H
L
H
L
H
H
H
H
L
DOUT
High-Z
High-Z
High-Z
L
H
L
H
H
H
L
L
H
L
High-Z
High-Z
DOUT
DOUT
Read Lower 2 Bytes Only
L
H
L
H
L
L
H
H
H
L
DOUT
DOUT
High-Z
High-Z
Read Upper 2 Bytes Only
Read Byte 3 Only
L
H
L
H
L
L
L
L
H
L
DOUT
DOUT
DOUT
DOUT
H
H
L
H
L
L
L
L
X
L
High-Z
High-Z
High-Z
High-Z
Outputs Disabled
X
X
X
X
X
X
X
X
X
H
High-Z
High-Z
High-Z
High-Z
High-Z Sleep Mode
Read All Bytes
NOTES:
1. "H" = V IH, "L" = VIL, "X" = Don't Care.
2. It is possible to read or write any combination of bytes during a given access. A few representative samples have been illustrated here.
5679 tbl 02
Truth Table II – Semaphore Read/Write Control(1)
Inputs(1)
Outputs
CE(2)
R/W
OE
BE3
BE2
BE1
BE0
SEM
I/O1-8,
I/O18-26
I/O0
H
H
L
X
L
X
L
L
DATAOUT
DATAOUT
H
↑
X
X
X
X
L
L
X
DATAIN
L
X
X
X
X
X
X
L
______
______
Mode
Read Data in Semaphore Flag (3)
Write I/O0 into Semaphore Flag
Not Allowed
5679 tbl 03
NOTES:
1. There are eight semaphore flags written to I/O 0 and read from the I/Os (I/O0-I/O08 and I/O18-I/O26). These eight semaphore flags are addressed by A0-A2.
2. CE = L occurs when CE0 = VIL and CE1 = VIH. CE = H when CE0 = VIH and/or CE1 = VIL.
3. Each byte is controlled by the respective BEn. To read data BEn = VIL.
5
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Recommended Operating
Temperature and Supply Voltage(1)
Grade
Commercial
Recommended DC Operating
Conditions with VDDQ at 2.5V
Symbol
Ambient
Temperature
GND
0OC to +70OC
Industrial
VDD
VDD
2.5V + 100mV
0V
-40OC to +85OC
2.5V + 100mV
0V
5679 tbl 04
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Capacitance(1)
(TA = +25°C, F = 1.0MHZ) PQFP ONLY
Symbol
CIN
COUT(3)
Parameter
Input Capacitance
Output Capacitance
Conditions(2)
Max.
Unit
VIN = 3dV
15
pF
VOUT = 3dV
10.5
pF
VDD Terminal Voltage
with Respect to GND
VTERM
(V DD)
(2)
-0.5 to 3.6
V
VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3
V
VTERM(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to VDDQ + 0.3
V
TBIAS(3)
Temperature
Under Bias
TSTG
TJN
Storage
Temperature
Junction Temperature
-65 to +150
+150
IOUT(For VDDQ = 3.3V) DC Output Current
50
IOUT(For VDDQ = 2.5V) DC Output Current
40
Max.
Unit
2.5
2.6
V
(3)
2.4
2.5
2.6
V
0
0
0
V
1.7
____
VDDQ + 100mV (2)
V
1.7
____
VDD + 100mV(2)
V
VDD - 0.2V
____
VDD + 100mV(2)
V
VDDQ
I/O Supply Voltage
VSS
Ground
V IH
Input High Volltage
(Address, Control &
Data I/O Inputs)(3)
V IH
Input High Voltage
JTAG
V IH
Input High Voltage ZZ, OPT
VIL
Input Low Voltage
-0.3(1)
____
0.7
V
VIL
Input Low Voltage ZZ, OPT
-0.3(1)
____
0.2
V
Symbol
Unit
VTERM
(V DDQ)
-55 to +125
Typ.
2.4
_
Recommended DC Operating
Conditions with VDDQ at 3.3V
Absolute Maximum Ratings(1)
Commercial
& Industrial
Parameter
5679 tbl 05
5679 tbl 08
Rating
Min.
Core Supply Voltage
NOTES:
1. VIL (min.) = -1.0V for pulse width less than t RC/2 or 5ns, whichever is less.
2. VIH (max.) = V DDQ + 1.0V for pulse width less than t RC/2 or 5ns, whichever is
less.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VSS(0V), and V DDQX for that port must be
supplied as indicated above.
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
Symbol
Preliminary
Industrial and Commercial Temperature Ranges
o
o
o
C
C
C
Min.
Typ.
Max.
Unit
V DD
Core Supply Voltage
Parameter
2.4
2.5
2.6
V
VDDQ
I/O Supply Voltage (3)
3.15
3.3
3.45
V
V SS
Ground
0
0
0
V
VIH
Input High Voltage
(Address, Control
&Data I/O Inputs)(3)
2.0
____
VDDQ + 150mV(2)
V
VIH
Input High Voltage
JTAG
1.7
____
V DD + 100mV (2)
V
VIH
Input High Voltage ZZ, OPT
VDD - 0.2V
____
V DD + 100mV (2)
V
(1)
____
0.8
V
(1)
____
0.2
V
VIL
Input Low Voltage
VIL
Input Low Voltage ZZ, OPT
_
-0.3
-0.3
5679 tbl 06
NOTES:
1. VIL (min.) = -1.0V for pulse width less than t RC/2 or 5ns, whichever is less.
2. VIH (max.) = V DDQ + 1.0V for pulse width less than t RC/2 or 5ns, whichever is
less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be
supplied as indicated above.
mA
mA
5679 tbl 07
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any Input or I/O pin cannot exceed VDDQ during power
supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
6
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 2.5V ± 100mV)
70T653M
Symbol
Parameter
Test Conditions
Input Leakage Current(1)
|ILI|
(1,2)
|ILI|
JTAG & ZZ Input Leakage Current
(1,3)
|ILO|
Min.
Max.
Unit
VDDQ = Max., VIN = 0V to VDDQ
___
10
µA
VDD = Max. , VIN = 0V to VDD
___
+60
µA
Output Leakage Current
CE0 = V IH or CE 1 = VIL, VOUT = 0V to VDDQ
___
10
µA
VOL (3.3V)
Output Low Voltage (1)
IOL = +4mA, VDDQ = Min.
___
0.4
V
VOH (3.3V)
Output High Voltage
(1)
IOH = -4mA, VDDQ = Min.
2.4
___
V
VOL (2.5V)
Output Low Voltage (1)
IOL = +2mA, VDDQ = Min.
___
0.4
V
VOH (2.5V)
Output High Voltage (1)
IOH = -2mA, VDDQ = Min.
2.0
___
V
5679 tbl 09
NOTES:
1. VDDQ is selectable (3.3V/2.5V) via OPT pins. Refer to page 6 for details.
2. Applicable only for TMS, TDI and TRST inputs.
3. Outputs tested in tri-state mode.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range(3) (VDD = 2.5V ± 100mV)
70T653MS10
Com'l Only
Symbol
IDD
(6)
ISB1
(6)
ISB2
ISB3
ISB4(6)
IZZ
Parameter
Test Condition
Version
70T653MS12
Com'l
& Ind
70T653MS15
Com'l Only
Typ. (4)
Max.
Typ.(4)
Max.
Typ. (4)
Max.
Unit
mA
Dynamic Operating
Current (Both
Ports Active)
CEL and CER= VIL,
Outputs Disabled
f = fMAX(1)
COM'L
S
600
810
600
710
450
600
IND
S
____
____
600
790
____
____
Standby Current
(Both Ports - TTL
Level Inputs)
CEL = CER = VIH
f = fMAX(1)
COM'L
S
180
240
150
210
120
170
IND
S
____
____
150
260
____
____
(5)
Standby Current
(One Port - TTL
Level Inputs)
CE"A" = VIL and CE"B" = VIH
Active Port Outputs Disabled,
f = fMAX(1)
COM'L
S
400
530
360
460
300
400
IND
S
____
____
360
510
____
____
Full Standby Current
(Both Ports - CMOS
Level Inputs)
Both Ports CEL and
CER > VDD - 0.2V, VIN > VDD - 0.2V
or VIN < 0.2V, f = 0(2)
COM'L
S
4
20
4
20
4
20
IND
S
____
____
4
40
____
____
Full Standby Current
(One Port - CMOS
Level Inputs)
CE"A" < 0.2V and CE"B" > VDD - 0.2V(5) COM'L
VIN > VDD - 0.2V or VIN < 0.2V, Active
IND
Port, Outputs Disabled, f = fMAX(1)
S
400
530
360
460
300
400
S
____
____
360
510
____
____
Sleep Mode Current
(Both Ports - TTL
Level Inputs)
ZZL = ZZR = VIH
f = fMAX(1)
COM'L
S
4
20
4
20
4
20
IND
S
____
____
4
40
____
____
mA
mA
mA
mA
mA
5679 tbl 10
NOTES:
1. At f = f MAX, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, using "AC TEST CONDITIONS" at input
levels of GND to 3.3V.
2. f = 0 means no address or control lines change. Applies only to input at CMOS level standby.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. VDD = 3.3V, T A = 25°C for Typ, and are not production tested. IDD DC(f=0) = 200mA (Typ).
5. CE X = VIL means CE0X = VIL and CE1X = VIH
CE X = VIH means CE0X = VIH or CE1X = V IL
CE X < 0.2V means CE0X < 0.2V and CE1X > VDDQX - 0.2V
CE X > VDDQX - 0.2V means CE 0X > VDDQX - 0.2V or CE1X < 0.2V.
"X" represents "L" for left port or "R" for right port.
6. ISB1, ISB2 and ISB4 will all reach full standby levels (I SB3) on the appropriate port(s) if ZZL and /or ZZ R = VIH.
7
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
AC Test Conditions (VDDQ - 3.3V/2.5V)
Input Pulse Levels
GND to 3.0V / GND to 2.4V
Input Rise/Fall Times
2ns Max.
Input Timing Reference Levels
1.5V/1.25V
Output Reference Levels
1.5V/1.25V
Output Load
Figure 1
5679 tbl 11
50Ω
50Ω
DATAOUT
1.5V/1.25
10pF
(Tester)
5679 drw 03
Figure 1. AC Output Test load.
4
3.5
3
∆ tAA/tACE
(Typical, ns)
2.5
2
1.5
1
0.5
0
0
20
40
60
80
100
120
∆ Capacitance (pF) from AC Test Load
140
5679 drw 05
Figure 3. Typical Output Derating (Lumped Capacitive Load).
8
160
,
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4)
70T653MS10
Com'l Only
Symbol
Parameter
Min.
Max.
70T653MS12
Com'l
& Ind
Min.
Max.
70T653MS15
Com'l Only
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
10
____
12
____
15
____
ns
tAA
Address Access Time
____
10
____
12
____
15
ns
tACE
Chip Enable Access Time
(3)
____
10
____
12
____
15
ns
tABE
Byte Enable Access Time (3)
____
5
____
6
____
7
ns
tAOE
Output Enable Access Time
____
5
____
6
____
7
ns
tOH
Output Hold from Address Change
3
____
3
____
3
____
ns
tLZ
Output Low-Z Time Chip Enable and Semaphore (1,2)
3
____
3
____
3
____
ns
0
____
0
____
0
____
ns
0
4
0
6
0
8
ns
0
____
0
____
0
____
ns
____
8
____
8
____
12
ns
____
4
____
6
____
8
ns
2
10
2
12
2
15
ns
____
5
____
6
____
7
tLZOB
Output Low-Z Time Output Enable and Byte Enable
(1,2)
(1,2)
tHZ
Output High-Z Time
tPU
Chip Enable to Power Up Time (2)
tPD
Chip Disable to Power Down Time
(2)
tSOP
Semaphore Flag Update Pulse (OE or SEM)
tSAA
Semaphore Address Access Time
tSOE
Semaphore Output Enable Access Time
ns
5679 tbl 12
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(4)
70T653MS10
Com'l Only
Symbol
Parameter
70T653MS12
Com'l
& Ind
70T653MS15
Com'l Only
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
10
____
12
____
15
____
ns
tEW
Chip Enable to End-of-Write
(3)
7
____
9
____
12
____
ns
tAW
Address Valid to End-of-Write
7
____
9
____
12
____
ns
tAS
Address Set-up Time (3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
7
____
9
____
12
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
5
____
7
____
10
____
ns
tDH
Data Hold Time
0
____
0
____
0
____
ns
____
(1,2)
tWZ
Write Enable to Output in High-Z
4
____
6
____
8
ns
tOW
Output Active from End-of-Write (1,2)
3
____
3
____
3
____
ns
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
SEM Flag Contention Window
5
____
5
____
5
____
tSWRD
tSPS
ns
5679 tbl 13
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 1).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE= VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. CE = VIL when
CE0 = VIL and CE1 = VIH. CE = VIH when CE 0 = VIH and/or CE1 = VIL.
4. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
9
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Waveform of Read Cycles(4)
tRC
ADDR
(3)
tAA
(3)
tACE
(5)
CE
tAOE
(3)
OE
tABE (3)
BEn
R/W
tOH
(1)
tLZ/tLZOB
DATAOUT
VALID DATA
(3)
tHZ
(2)
.
5679 drw 06
NOTES:
1. Timing depends on which signal is asserted last, OE, CE or BEn.
2. Timing depends on which signal is de-asserted first CE, OE or BEn.
3. Start of valid data depends on which timing becomes effective last tAOE, tACE , tAA or tABE.
4. SEM = VIH.
5. CE = L occurs when CE0 = VIL and CE1 = VIH. CE = H when CE0 = VIH and/or CE1 = VIL.
Timing of Power-Up Power-Down
CE
tPU
tPD
ICC
50%
50%
ISB
.
5679 drw 07
10
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)
tWC
ADDRESS
tHZ
(7)
OE
tAW
(9)
CE or SEM
(9)
BEn
(2)
tAS (6)
tWR
tWP
(3)
R/W
tWZ (7)
tOW
(4)
DATAOUT
(7)
(4)
tDW
tDH
DATAIN
.
5679 drw 10
Timing Waveform of Write Cycle No. 2, CE Controlled Timing(1,5,8)
tWC
ADDRESS
tAW
CE or SEM
(9)
(6)
tAS
tWR(3)
tEW (2)
BEn(9)
R/W
tDW
tDH
DATAIN
.
5679 drw 11
.
NOTES:
1. R/W or CE or BEn = VIH during all address transitions for Write Cycles 1 and 2.
2. A write occurs during the overlap (tEW or tWP) of a CE = VIL, BEn = VIL, and a R/W = VIL for memory array writing cycle.
3. tWR is measured from the earlier of CE, BEn or R/W (or SEM or R/W) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM = VIL transition occurs simultaneously with or after the R/W = VIL transition, the outputs remain in the High-impedance state.
6. Timing depends on which enable signal is asserted last, CE or R/W.
7. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 1).
8. If OE = VIL during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW ) to allow the I/O drivers to turn off and data to be
placed on the bus for the required tDW . If OE = VIH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified tWP .
9. To access RAM, CE = V IL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. CE = V IL when CE0 = V IL
and CE1 = VIH. CE = VIH when CE0 = VIH and/or CE1 = VIL.
11
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
RapidWrite Mode Write Cycle
Preliminary
Industrial and Commercial Temperature Ranges
taken to still meet the Write Cycle time (tWC), the time in which the Address
inputs must be stable. Input data setup and hold times (tDW and tDH) will
now be referenced to the ending address transition. In this RapidWrite
Mode the I/O will remain in the Input mode for the duration of the operations
due to R/W being held low. All standard Write Cycle specifications must
be adhered to. However, tAS and tWR are only applicable when switching
between read and write operations. Also, there are two additional
conditions on the Address Inputs that must also be met to ensure correct
address controlled writes. These specifications, the Allowable Address
Skew (tAAS) and the Address Rise/Fall time (tARF), must be met to use the
RapidWrite Mode. If these conditions are not met there is the potential for
inadvertent write operations at random intermediate locations as the
device transitions between the desired write addresses.
Unlike other vendors' Asynchronous Random Access Memories,
the IDT70T653M is capable of performing multiple back-to-back write
operations without having to pulse the R/W, CE, or BEn signals high
during address transitions. This RapidWrite Mode functionality allows the
system designer to achieve optimum back-to-back write cycle performance
without the difficult task of generating narrow reset pulses every cycle,
simplifying system design and reducing time to market.
During this new RapidWrite Mode, the end of the write cycle is now
defined by the ending address transition, instead of the R/W or CE or BEn
transition to the inactive state. R/W, CE, and BEn can be held active
throughout the address transition between write cycles. Care must be
Timing Waveform of Write Cycle No. 3, RapidWrite Mode Write Cycle(1,3)
(4)
tWC
tWC
tWC
ADDRESS
(2)
CE or SEM
(6)
tEW
BEn
tWR
tWP
R/W
(5)
(5)
tWZ
tOW
DATAOUT
tDH
tDH
tDW
tDW
tDH
tDW
DATAIN
5679 drw 08
NOTES:
1. OE = VIL for this timing waveform as shown. OE may equal VIH with same write functionality; I/O would then always be in High-Z state.
2. A write occurs during the overlap (tEW or tWP) of a CE = V IL, BEn = VIL, and a R/W = VIL for memory array writing cycle. The last transition LOW of CE, BEn, and
R/W initiates the write sequence. The first transition HIGH of CE, BEn, and R/W terminates the write sequence.
3. If the CE or SEM = VIL transition occurs simultaneously with or after the R/W = VIL transition, the outputs remain in the High-impedance state.
4. The timing represented in this cycle can be repeated multiple times to execute sequential RapidWrite Mode writes.
5. This parameter is guaranteed by device characterization, but is not production tested. Transition is measured 0mV from steady state with the Output Test Load
(Figure 1).
6. To access RAM, CE = V IL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. tEW must be met for either condition. CE = V IL when CE0 = V IL
and CE1 = VIH. CE = V IH when CE0 = VIH and/or CE1 = VIL.
12
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics over the Operating Temperature Range
and Supply Voltage Range for RapidWrite Mode Write Cycle(1)
Symbol
Parameter
Min
tAAS
Allowable Address Skew for RapidWrite Mode
____
tARF
Address Rise/Fall Time for RapidWrite Mode
1.5
Max
Unit
1
ns
____
V/ns
5679 tbl 14
NOTE:
1. Timing applies to all speed grades when utilizing the RapidWrite Mode Write Cycle.
Timing Waveform of Address Inputs for RapidWrite Mode Write Cycle
A0
tARF
tAAS
A18
tARF
5679 drw 09
13
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform of Semaphore Read after Write Timing, Either Side(1)
tSAA
A0-A2
VALID ADDRESS
tAW
VALID ADDRESS
tWR
tACE
tEW
SEM(1)
tOH
tSOP
tDW
I/O
DATAOUT(2)
VALID
DATA IN VALID
tAS
tWP
tDH
R/W
tSWRD
OE
tSOE
tSOP
Write Cycle
Read Cycle
5679 drw 12
.
NOTES:
1. CE0 = VIH and CE1 = VIL are required for the duration of both the write cycle and the read cycle waveforms shown above. Refer to Truth Table II for details and for
appropriate BEn controls.
2. "DATAOUT VALID" represents all I/O's (I/O 0 - I/O8 and I/O18 - I/O26) equal to the semaphore value.
Timing Waveform of Semaphore Write Contention(1,3,4)
A0"A"-A2"A"
(2)
SIDE
"A"
MATCH
R/W"A"
SEM"A"
tSPS
A0"B"-A2"B"
(2)
SIDE
"B"
MATCH
R/W"B"
SEM"B"
5679 drw 13 .
NOTES:
1. DOR = D OL = VIL, CEL = CE R = VIH. Refer to Truth Table II for appropriate BE controls.
2. All timing is the same for left and right ports. Port "A" may be either left or right port. "B" is the opposite from port "A".
3. This parameter is measured from R/W"A" or SEM"A" going HIGH to R/W"B" or SEM"B" going HIGH.
4. If tSPS is not satisfied,the semaphore will fall positively to one side or the other, but there is no guarantee which side will be granted the semaphore flag.
14
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
70T653MS10
Com'l Only
Symbol
Parameter
70T653MS12
Com'l
& Ind
70T653MS15
Com'l Only
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY TIMING
tWB
BUSY Input to Write (4)
0
____
0
____
0
____
ns
tWH
Write Hold After BUSY(5)
7
____
9
____
12
____
ns
____
14
____
16
____
20
ns
____
14
____
16
____
20
PORT-TO-PORT DELAY TIMING
tWDD
tDDD
Write Pulse to Data Delay (1)
Write Data Valid to Read Data Delay
(1)
ns
5679 tbl 15
NOTES:
1. Port-to-port delay through RAM cells from writing port to reading port, refer to Timing Waveform of Write with Port-to-Port Read.
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of the Max. spec, tWDD – tWP (actual), or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1,2,3)
70T65M3S10
Com'l Only
Symbol
Parameter
70T653MS12
Com'l
& Ind
70T6539MS15
Com'l Only
Min.
Max.
Min.
Max.
Min.
Max.
SLEEP MODE TIMING (ZZx=V IH)
tZZS
Sleep Mode Set Time
10
____
12
____
15
____
tZZR
Sleep Mode Reset Time
10
____
12
____
15
____
tZZPD
Sleep Mode Power Down Time (4)
10
____
12
____
15
____
tZZPU
Sleep Mode Power Up Time (4)
____
0
____
0
____
0
5679 tbl 15a
NOTES:
1. Timing is the same for both ports.
2. The sleep mode pin shuts off all dynamic inputs, except JTAG inputs, when asserted. OPTx, INTx and the sleep mode pins themselves (ZZx) are not affected
during sleep mode. It is recommended that boundary scan not be operated during sleep mode.
3. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
4. This parameter is guaranteed by device characterization, but is not production tested.
15
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Timing Waveform of Write with Port-to-Port Read(1,3)
tWC
MATCH
ADDR"A"
tWP
R/W"A"
tDH
tDW
VALID
DATAIN "A"
MATCH
ADDR"B"
(4)
R/W"B"
tWDD
DATAOUT "B"
VALID
tDDD (3)
.
NOTES:
1. CE0L = CE0R = VIL; CE1L = CE1R = VIH.
2. OE = VIL for the reading port.
3. All timing is the same for left and right ports. Port "A" may be either the left or right port. Port "B" is the port opposite from port "A".
4. R/WB = V IH.
5679 drw 14a
Timing Waveform of Write with BUSY
tWP
R/W"A"
tWB
BUSY"B"
tWH(1)
R/W"B"
(2)
NOTES:
1. tWH must be met for BUSY input.
2. BUSY is asserted on port "B" blocking R/W"B" , until BUSY"B" goes HIGH.
5679 drw 15
.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(1,2)
70T653MS10
Com'l Only
Symbol
Parameter
70T653MS12
Com'l
& Ind
70T653MS15
Com'l Only
Min.
Max.
Min.
Max.
Min.
Max.
Unit
INTERRUPT TIMING
tAS
Address Set-up Time
0
____
0
____
0
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tINS
Interrupt Set Time
____
10
____
12
____
15
ns
tINR
Interrupt Reset Time
____
10
____
12
____
15
ns
NOTES:
1. Timing is the same for both ports.
2. These values are valid regardless of the power supply level selected for I/O and control signals (3.3V/2.5V). See page 6 for details.
16
5679 tbl 16
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Waveform of Interrupt Timing(1)
tWC
(2)
ADDR"A"
INTERRUPT SET ADDRESS
tWR(5)
tAS(4)
CE"A"(3)
R/W"A"
tINS
(4)
INT"B"
.
5679 drw 18
tRC
ADDR"B"
INTERRUPT CLEAR ADDRESS
tAS
(2)
(4)
CE"B"(3)
OE"B"
tINR (4)
INT"B"
5679 drw 19
.
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from port “A”.
2. Refer to Interrupt Truth Table.
3. CEX = VIL means CE0X = VIL and CE 1X = V IH. CEX = V IH means CE0X = V IH and/or CE1X = VIL.
4. Timing depends on which enable signal (CE or R/W) is asserted last.
5. Timing depends on which enable signal (CE or R/W) is de-asserted first.
Truth Table III — Interrupt Flag(1,4)
Left Port
R/WL
CEL
OEL
Right Port
A18L-A0L
INTL
R/WR
CER
OER
A18R-A0R
INTR
(2)
Function
L
L
X
7FFFF
X
X
X
X
X
L
Set Right INTR Flag
X
X
X
X
X
X
L
L
7FFFF
H(3)
Reset Right INTR Flag
X
X
X
X
L(3)
L
L
X
7FFFE
X
Set Left INTL Flag
X
L
L
7FFFE
H(2)
X
X
X
X
X
Reset Left INTL Flag
5679 tbl 17
NOTES:
1. Assumes BUSYL = BUSYR =VIH. CE0X = VIL and CE1X = VIH.
2. If BUSYL = V IL, then no change.
3. If BUSYR = VIL, then no change.
4. INTL and INTR must be initialized at power-up.
17
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Truth Table IV — Example of Semaphore Procurement Sequence(1,2,3)
D0 - D8 Left
D18 - D26 Left
D0 - D8 Right
D18 - D26 Right
No Action
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Right Port Writes "0" to Semaphore
0
1
No change. Right side has no write access to semaphore
Left Port Writes "1" to Semaphore
1
0
Right port obtains semaphore token
Left Port Writes "0" to Semaphore
1
0
No change. Left port has no write access to semaphore
Right Port Writes "1" to Semaphore
0
1
Left port obtains semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
Right Port Writes "0" to Semaphore
1
0
Right port has semaphore token
Right Port Writes "1" to Semaphore
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
Functions
Status
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70T653M.
2. There are eight semaphore flags written to via I/O0 and read from I/Os (I/O0-I/O8 and I/O18 -I/O26 ). These eight semaphores are addressed by A0 - A2.
3. CE = VIH, SEM = V IL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table.
Functional Description
5679 tbl 19
semaphore flags. These flags allow either processor on the left or
right side of the Dual-Port RAM to claim a privilege over the other
processor for functions defined by the system designer’s software. As
an example, the semaphore can be used by one processor to inhibit
the other from accessing a portion of the Dual-Port RAM or any other
shared resource.
The Dual-Port RAM features a fast access time, with both ports being
completely independent of each other. This means that the activity on the
left port in no way slows the access time of the right port. Both ports are
identical in function to standard CMOS Static RAM and can be read from
or written to at the same time with the only possible conflict arising from the
simultaneous writing of, or a simultaneous READ/WRITE of, a nonsemaphore location. Semaphores are protected against such ambiguous
situations and may be used by the system program to avoid any conflicts
in the non-semaphore portion of the Dual-Port RAM. These devices have
an automatic power-down feature controlled by CE0 and CE1, the DualPort RAM chip enables, and SEM, the semaphore enable. The CE0, CE1,
and SEM pins control on-chip power down circuitry that permits the
respective port to go into standby mode when not selected.
Systems which can best use the IDT70T653M contain multiple
processors or controllers and are typically very high-speed systems
which are software controlled or software intensive. These ystems can
benefit from a performance increase offered by the IDT70T653Ms
hardware semaphores, which provide a lockout mechanism without
requiring complex programming.
Software handshaking between processors offers the maximum in
system flexibility by permitting shared resources to be allocated invarying
configurations. The IDT70T653M does not use its semaphore flags to
control any resources through hardware, thus allowing the system
designer total flexibility in system architecture.
An advantage of using semaphores rather than the more common
methods of hardware arbitration is that wait states are never incurred
in either processor. This can prove to be a major advantage in very
high-speed systems.
The IDT70T653M provides two ports with separate control, address
and I/O pins that permit independent access for reads or writes to any
location in memory. The IDT70T653M has an automatic power down
feature controlled by CE. The CE0 and CE1 control the on-chip power
down circuitry that permits the respective port to go into a standby mode
when not selected (CE = HIGH). When a port is enabled, access to the
entire memory array is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail box
or message center) is assigned to each port. The left port interrupt flag
(INTL) is asserted when the right port writes to memory location 7FFFE
(HEX), where a write is defined as CER = R/WR = VIL per the Truth Table.
The left port clears the interrupt through access of address location 7FFFE
when CEL = OEL = VIL, R/W is a "don't care". Likewise, the right port
interrupt flag (INTR) is asserted when the left port writes to memory location
7FFFF (HEX) and to clear the interrupt flag (INTR), the right port must read
the memory location 7FFFF. The message (36 bits) at 7FFFE or 7FFFF
is user-defined since it is an addressable SRAM location. If the interrupt
function is not used, address locations 7FFFE and 7FFFF are not used
as mail boxes, but as part of the random access memory. Refer to Truth
Table III for the interrupt operation.
Busy Logic
The BUSY pin operates as a write inhibit input pin. Normal operation
can be programmed by tying the BUSY pins HIGH. If desired, unintended
write operations can be prevented to a port by tying the BUSY pin for that
port LOW.
Semaphores
The IDT70T653M is an extremely fast Dual-Port 512K x 36 CMOS
Static RAM with an additional 8 address locations dedicated to binary
18
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
How the Semaphore Flags Work
The semaphore logic is a set of eight latches which are independent of the Dual-Port RAM. These latches can be used to pass a flag,
or token, from one port to the other to indicate that a shared resource
is in use. The semaphores provide a hardware assist for a use
assignment method called “Token Passing Allocation.” In this method,
the state of a semaphore latch is used as a token indicating that a
shared resource is in use. If the left processor wants to use this
resource, it requests the token by setting the latch. This processor then
verifies its success in setting the latch by reading it. If it was successful, it
proceeds to assume control over the shared resource. If it was not
successful in setting the latch, it determines that the right side processor
has set the latch first, has the token and is using the shared resource.
The left processor can then either repeatedly request that
semaphore’s status or remove its request for that semaphore to
perform another task and occasionally attempt again to gain control of
the token via the set and test sequence. Once the right side has
relinquished the token, the left side should succeed in gaining control.
The semaphore flags are active LOW. A token is requested by
writing a zero into a semaphore latch and is released when the same
side writes a one to that latch.
The eight semaphore flags reside within the IDT70T653M in a
separate memory space from the Dual-Port RAM. This address space
is accessed by placing a low input on the SEM pin (which acts as a chip
select for the semaphore flags) and using the other control pins (Address,
CE0, CE1,R/W and BEn) as they would be used in accessing a
standard Static RAM. Each of the flags has a unique address which can
be accessed by either side through address pins A0 – A2. When accessing
the semaphores, none of the other address pins has any effect.
When writing to a semaphore, only data pin D0 is used. If a low level
is written into an unused semaphore location, that flag will be set to
a zero on that side and a one on the other side (see Truth Table IV).
That semaphore can now only be modified by the side showing the zero.
When a one is written into the same location from the same side, the flag
will be set to a one for both sides (unless a semaphore request
from the other side is pending) and then can be written to by both sides.
The fact that the side which is able to write a zero into a semaphore
subsequently locks out writes from the other side is what makes
semaphore flags useful in interprocessor communications. (A thorough
discussion on the use of this feature follows shortly.) A zero written into the
same location from the other side will be stored in the semaphore request
latch for that side until the semaphore is freed by the first side.
When a semaphore flag is read, its value is spread into all data bits so
that a flag that is a one reads as a one in all data bits and a flag containing
a zero reads as all zeros for a semaphore read, the SEM, BEn, and OE
signals need to be active. (Please refer to Truth Table II). Furthermore,
the read value is latched into one side’s output register when that side's
semaphore select (SEM, BEn) and output enable (OE) signals go active.
This serves to disallow the semaphore from changing state in the middle
of a read cycle due to a write cycle from the other side.
A sequence WRITE/READ must be used by the semaphore in
order to guarantee that no system level contention will occur. A
processor requests access to shared resources by attempting to write
a zero into a semaphore location. If the semaphore is already in use,
the semaphore request latch will contain a zero, yet the semaphore
flag will appear as one, a fact which the processor will verify by the
19
Preliminary
Industrial and Commercial Temperature Ranges
subsequent read (see Table IV). As an example, assume a processor
writes a zero to the left port at a free semaphore location. On a
subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question.
Meanwhile, if a processor on the right side attempts to write a zero to the
same semaphore flag it will fail, as will be verified by the fact that a one will
be read from that semaphore on the right side during subsequent read.
Had a sequence of READ/WRITE been used instead, system contention
problems could have occurred during the gap between the read and write
cycles.
It is important to note that a failed semaphore request must be followed
by either repeated reads or by writing a one into the same location. The
reason for this is easily understood by looking at the simple logic diagram
L PORT
R PORT
SEMAPHORE
REQUEST FLIP FLOP
D0
WRITE
D
Q
SEMAPHORE
REQUEST FLIP FLOP
Q
SEMAPHORE
READ
D
D0
WRITE
SEMAPHORE
READ
5679 drw 21
Figure 4. IDT70T653M Semaphore Logic
of the semaphore flag in Figure 4. Two semaphore request latches feed
into a semaphore flag. Whichever latch is first to present a zero to the
semaphore flag will force its side of the semaphore flag LOW and the other
side HIGH. This condition will continue until a one is written to the same
semaphore request latch. If the opposite side semaphore request latch has
been written to zero in the meantime, the semaphore flag will flip over to
the other side as soon as a one is written into the first request latch. The
opposite side flag will now stay LOW until its semaphore request latch is
written to a one. From this it is easy to understand that, if a semaphore is
requested and the processor which requested it no longer needs the
resource, the entire system can hang up until a one is written into that
semaphore request latch.
The critical case of semaphore timing is when both sides request a
single token by attempting to write a zero into it at the same time. The
semaphore logic is specially designed to resolve this problem. If simultaneous requests are made, the logic guarantees that only one side receives
the token. If one side is earlier than the other in making the request, the first
side to make the request will receive the token. If
both requests arrive at the same time, the assignment will be arbitrarily
made to one port or the other.
One caution that should be noted when using semaphores is that
semaphores alone do not guarantee that access to a resource is secure.
As with any powerful programming technique, if semaphores
are misused or misinterpreted, a software error can easily happen.
Initialization of the semaphores is not automatic and must be handled
via the initialization program at power-up. Since any semaphore request
flag which contains a zero must be reset to a one, all semaphores on both
sides should have a one written into them at initialization from both sides
to assure that they will be free when needed.
20
VALIDDATA
VALIDADDRESS
NOTES:
1. CE1 = V IH.
2. All timing is same for Left and Right ports.
IDD
DATA
ADDRESS
ZZ
CE0
Normal Operation
tZZS
tZZPD
No newreads or writes allowed
Timing Waveform of Sleep Mode(1,2)
IZZ
Sleep Mode
tZZPU
tZZR
No reads or writes allowed
,
5679 drw22
Normal Operation
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Sleep Mode
The IDT70T653M is equipped with an optional sleep or low power
mode on both ports. The sleep mode pin on both ports is active high. During
normal operation, the ZZ pin is pulled low. When ZZ is pulled high, the
port will enter sleep mode where it will meet lowest possible power
conditions. The sleep mode timing diagram shows the modes of operation:
Normal Operation, No Read/Write Allowed and Sleep Mode.
For a period of time prior to sleep mode and after recovering from sleep
Preliminary
Industrial and Commercial Temperature Ranges
mode (tZZS and tZZR), new reads or writes are not allowed. If a write or read
operation occurs during these periods, the memory array may be
corrupted. Validity of data out from the RAM cannot be guaranteed
immediately after ZZ is asserted (prior to being in sleep).
During sleep mode the RAM automatically deselects itself. The RAM
disconnects its internal buffer. All outputs will remain in high-Z state while
in sleep mode. All inputs are allowed to toggle. The RAM will not be selected
and will not perform any reads or writes.
JTAG Configuration
IDT70T653M
TDIA
TDOA
Array A
TDIB
TDOB
Array B
TCK
TMS
TRST
5679 drw 23
JTAG Timing Specifications
tJF
tJCL
tJCYC
tJR
tJCH
TCK
Device Inputs(1)/
TDI/TMS
tJS
Device Outputs(2)/
TDO
tJDC
tJH
tJRSR
tJCD
TRST
x
5679 drw 24
tJRST
NOTES:
1. Device inputs = All device inputs except TDI, TMS, TCK and TRST.
2. Device outputs = All device outputs except TDO.
21
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
JTAG AC Electrical
Characteristics(1,2,3,4,5)
Preliminary
Industrial and Commercial Temperature Ranges
70T653M
Symbol
Parameter
Min.
Max.
Units
tJCYC
JTAG Clock Input Period
100
____
ns
tJCH
JTAG Clock HIGH
40
____
ns
tJCL
JTAG Clock Low
40
____
ns
tJR
JTAG Clock Rise Time
____
3(1)
ns
tJF
JTAG Clock Fall Time
____
3(1)
ns
tJRST
JTAG Reset
50
____
ns
tJRSR
JTAG Reset Recovery
50
____
ns
tJCD
JTAG Data Output
____
25
ns
tJDC
JTAG Data Output Hold
0
____
ns
tJS
JTAG Setup
15
____
ns
tJH
JTAG Hold
15
____
ns
NOTES:
1. Guaranteed by design.
2. 30pF loading on external output signals.
3. Refer to AC Electrical Test Conditions stated earlier in this document.
4. JTAG operations occur at one speed (10MHz). The base device may run at any
speed specified in this datasheet.
5. JTAG cannot be tested in sleep mode.
5679 tbl 20
Identification Register Definitions
Instruction Field Array B
Value
Array B
Revision Number (31:28)
0x0
Instruction Field Array A
Value
Array A
Revision Number (63:60)
0x0
Description
Reserved for Version number
IDT Device ID (27:12)
0x33B
IDT Device ID (59:44)
0x33B
Defines IDT Part number
IDT JEDEC ID (11:1)
0x33
IDT JEDEC ID (43:33)
0x33
Allows unique identification of device vendor as IDT
ID Register Indicator Bit (Bit 0)
1
ID Register Indicator Bit (Bit 32)
1
Indicates the presence of an ID Register
5679 tbl 21
Scan Register Sizes
Bit Size
Array A
Bit Size
Array B
Bit Size
70T653M
Instruction (IR)
4
4
8
Bypass (BYR)
1
1
2
32
32
64
Note (3)
Note (3)
Note (3)
Register Name
Identification (IDR)
Boundary Scan (BSR)
5679 tbl 22
22
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
System Interface Parameters
Instruction
Code
Description
EXTEST
00000000
Forces contents of the boundary scan cells onto the device outputs (1).
Places the boundary scan register (BSR) between TDI and TDO.
BYPASS
11111111
Places the bypass register (BYR) between TDI and TDO.
IDCODE
00100010
Loads the ID register (IDR) with the vendor ID code and places the
register between TDI and TDO.
01000100
Places the bypass register (BYR) between TDI and TDO. Forces all
device output drivers to a High-Z state.
HIGHZ
CLAMP
00110011
SAMPLE/PRELOAD
00010001
RESERVED
Uses BYR. Forces contents of the boundary scan cells onto the device
outputs. Places the bypass register (BYR) between TDI and TDO.
Places the boundary scan register (BSR) between TDI and TDO.
SAMPLE allows data from device inputs (2) and outputs (1) to be captured
in the boundary scan cells and shifted serially through TDO. PRELOAD
allows data to be input serially into the boundary scan cells via the TDI.
Several combinations are reserved. Do not use codes other than those
identified above.
All Other Codes
NOTES:
1. Device outputs = All device outputs except TDO.
2. Device inputs = All device inputs except TDI, TMS, TCK and TRST.
3. The Boundary Scan Descriptive Language (BSDL) file for this device is available on the IDT website (www.idt.com), or by contacting your local
IDT sales representative.
23
5679 tbl 23
IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Ordering Information
IDT XXXXX
Device
Type
A
999
A
A
Power
Speed
Package
Process/
Temperature
Range
Blank
I
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)
BC
256-ball BGA (BC-256)
10
12
15
Commercial Only
Commercial & Industrial
Commercial Only
S
Standard Power
.
Speed in nanoseconds
70T653M 18Mbit (512K x 36) Asynchronous Dual-Port RAM
5679 drw 25
Preliminary Datasheet: Definition
"PRELIMINARY' datasheets contain descriptions for products that are in early release.
Datasheet Document History:
10/08/03: Initial Datasheet
10/20/03: Page 1 Added "Includes JTAG functionality" to features
Page 13 Corrected tARF to 1.5V/ns Min.
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24
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