SeCoS MMBT4403 Switching transistor Datasheet

MMBT4403
PNP Silicon
Switching Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
3
C
0.890
1.110
Top View
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
A
COLLECTOR
L
3
1
BASE
1
3
V
2
EMITTER
B S
2
G
1
2
C
H
D
J
K
All Dimension in mm
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.6
A
PC
Collector Dissipation
0.3
W
TJ, Tstg
Junction and Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
unless
Symbol
otherwise
Test
specified)
conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=-100μA ,
IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA ,
IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,
IC=0
-5
V
Collector cut-off current
ICBO
VCB=-35V ,
IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-35 V , IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB=-4V ,
-0.1
μA
IC=0
DC current gain
hFE
VCE=-2 V,
Collector-emitter saturation voltage
VCE(sat)
IC=-150 mA, IB=-15mA
-0.4
V
Base-emitter saturation voltage
VBE(sat)
IC=- 150 mA, IB=-15mA
-0.95
V
Transition frequency
fT
IC= -150mA
VCE= -10V, IC= -20mA
f = 100MHz
100
200
300
MHz
MARKING: 2T
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 4
MMBT4403
PNP Silicon
Switching Transistor
Elektronische Bauelemente
TRANSIENT CHARACTERISTICS
25°C
100°C
30
Ceb
VCC = 30 V
IC/IB = 10
3.0
Q, CHARGE (nC)
CAPACITANCE (pF)
20
10
7.0
5.0
10
7.0
Ccb
5.0
2.0
1.0
0.7
0.5
QT
0.3
QA
0.2
2.0
0.1
0.2 0.3
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
0.1
30
10
20
200
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 3. Capacitances
100
IC/IB = 10
70
70
VCC = 30 V
IC/IB = 10
50
50
tr @ VCC = 30 V
tr @ VCC = 10 V
td @ VBE(off) = 2 V
td @ VBE(off) = 0
30
20
t r , RISE TIME (ns)
t, TIME (ns)
500
Figure 4. Charge Data
100
30
20
10
10
7.0
7.0
5.0
300
10
20
30
50
70
200
100
300
5.0
500
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn−On Time
Figure 6. Rise Time
300
500
200
t s′, STORAGE TIME (ns)
IC/IB = 10
100
IC/IB = 20
70
50
IB1 = IB2
ts′ = ts − 1/8 tf
30
20
10
20
30
50
70
100
200
300
500
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 2 of 4
MMBT4403
PNP Silicon
Switching Transistor
Elektronische Bauelemente
SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = −10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz
10
10
f = 1 kHz
8
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
8
IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k
IC = 100 A, RS = 1.6 k
6
4
2
6
4
2
RS = OPTIMUM SOURCE RESISTANCE
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0 5.0
10
20
50
IC = 50 A
100 A
500 A
1.0 mA
0
100
50
100
200
500
1k
2k
5k
10k 20k
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Frequency Effects
Figure 9. Source Resistance Effects
50k
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 255C
This group of graphs illustrates the relationship between hfe and other ªhº parameters for this series of transistors. T o obtain
these curves, a high-gain and a low-gain unit were selected from the MMBT4403 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
100 k
700
50 k
hfe, CURRENT GAIN
500
300
200
MMBT4403 UNIT 1
MMBT4403 UNIT 2
100
70
50
30
0.1
hie , INPUT IMPEDANCE (OHMS)
1000
0.2
0.3
0.5 0.7 1.0
2.0
3.0
2k
1k
500
100
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
Figure 10. Current Gain
Figure 11. Input Impedance
5.0 7.0 10
500
MMBT4403 UNIT 1
MMBT4403 UNIT 2
2.0
1.0
0.5
0.2
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
hoe, OUTPUT ADMITTANCE ( mhos)
hre , VOLTAGE FEEDBACK RATIO (X 10- 4 )
5k
IC, COLLECTOR CURRENT (mAdc)
5.0
01-Jun-2004 Rev. B
10 k
IC, COLLECTOR CURRENT (mAdc)
10
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20 k
200
20
0.1
0.1
MMBT4403 UNIT 1
MMBT4403 UNIT 2
100
50
20
MMBT4403 UNIT 1
MMBT4403 UNIT 2
10
5.0
2.0
1.00.1
0.2 0.3
0.5 0.7 1.0
2.0
3.0
IC, COLLECTOR CURRENT (mAdc)
IC, COLLECTOR CURRENT (mAdc)
Figure 12. Voltage Feedback Ratio
Figure 13. Output Admittance
5.0 7.0 10
Any changing of specification will not be informed individual
Page 3 of 4
MMBT4403
PNP Silicon
Switching Transistor
Elektronische Bauelemente
STATIC CHARACTERISTICS
h FE, NORMALIZED CURRENT GAIN
3.0
VCE = 1.0 V
VCE = 10 V
2.0
TJ = 125°C
25°C
1.0
−55 °C
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
70
50
100
200
300
500
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.005
0.01
0.02
0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0
7.0
10
20
30
50
Figure 15. Collector Saturation Region
0.5
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(sat) @ VCE = 10 V
0
COEFFICIENT (mV/ °C)
VOLTAGE (VOLTS)
1.0
0.4
0.2
VC for VCE(sat)
0.5
1.0
1.5
VS for VBE
2.0
VCE(sat) @ IC/IB = 10
0
0.1 0.2
0.5
50 100 200
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
Figure 16. “On” Voltages
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01-Jun-2004 Rev. B
500
2.5
0.1 0.2
0.5
50 100 200
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
500
Figure 17. Temperature Coefficients
Any changing of specification will not be informed individual
Page 4 of 4
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