ON MGP20N35CL Smartdiscretes internally clamped, n-channel igbt Datasheet

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by MGP20N35CL/D
SEMICONDUCTOR TECHNICAL DATA
!

20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
VCE(on) = 1.8 VOLTS
350 VOLTS (CLAMPED)
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES monolithic circuitry for
usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Collector Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
C
G
G
C
Rge
E
CASE 221A–09
STYLE 9
TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
CLAMPED
Vdc
Collector–Gate Voltage
VCGR
CLAMPED
Vdc
VGE
CLAMPED
Vdc
IC
20
Adc
ICR
12
Apk
PD
150
Watts
ESD
3.5
kV
TJ, Tstg
– 55 to 175
°C
RqJC
RqJA
1.0
62.5
°C/W
TL
260
°C
Gate–Emitter Voltage
Collector Current — Continuous @ TC = 25°C
Reversed Collector Current – pulse width
t 100 ms
Total Power Dissipation @ TC = 25°C (TO–220)
Electrostatic Voltage — Gate–Emitter
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
10 lbfin (1.13 Nm)
Mounting Torque, 6–32 or M3 screw
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse Collector–Emitter Avalanche Energy
@ Starting TJ = 25°C
@ Starting TJ = 150°C
EAS
mJ
550
150
SMARTDISCRETES is a trademark of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 1
TMOS
 Motorola
Motorola, Inc.
1997
Power MOSFET Transistor Device Data
1
MGP20N35CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
320
350
380
—
—
—
—
1.0
200
Unit
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(IClamp = 10 mA, TJ = –40 to 150°C)
V(BR)CES
Zero Gate Voltage Collector Current
(VCE = 250 V, VGE = 0 V, TJ = 125°C)
(VCE = 15 V, VGE = 0 V, TJ = 125°C)
ICES
Resistance Gate–Emitter (TJ = –40 to 150°C)
RGE
10k
16k
30k
Gate–Emitter Breakdown Voltage (IG = 2 mA)
V(BR)GES
11
13
15
"V
IECS
—
8
100
mA
V(BR)ECS
26
40
120
V
1.0
0.75
1.7
—
2.4
1.8
—
—
—
1.1
1.4
1.4
1.4
1.9
1.8
gfe
10
16
—
S
pF
Collector–Emitter Reverse Leakage (VCE = –15 V, TJ = –40 to 150°C)
Collector–Emitter Reversed Breakdown Voltage (IE = 75 mA)
Vdc
mA
mA
W
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VCE = VGE, IC = 1 mA)
(VCE = VGE, IC = 1 mA, TJ = 150°C)
VGE(th)
Collector–Emitter On–Voltage
(VGE = 5 V, IC = 5 A)
(VGE = 5 V, IC = 10 A)
(VGE = 5 V, IC = 10 Adc, TJ = 150°C)
VCE(on)
Forward Transconductance (VCE
u 50 V, IC = 10 A)
V
V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VCE = 25 Vdc,
Vdc VGE = 0 Vdc,
Vdc
f = 1.0 MHz)
Transfer Capacitance
Cies
—
2800
—
Coes
—
200
—
Cres
—
25
—
SWITCHING CHARACTERISTICS (1)
Total Gate Charge
Gate–Emitter Charge
Qg
—
45
80
Qge
—
8.0
—
Qgc
—
20
—
( CC = 320 V,, IC = 20 A,,
(V
L = 200 mH, RG = 1 KW)
td(off)
—
TBD
TBD
tf
—
TBD
TBD
((VCC = 14 V,, IC = 20 A,,
L = 200 mH, RG = 1 KW)
td(on)
—
TBD
TBD
tr
—
TBD
TBD
(VCC = 280 V,
V IC = 20 A,
A
VGE = 5 V)
Gate–Collector Charge
Turn–Off Delay Time
Fall Time
Turn–On Delay Time
Rise Time
nC
µs
µs
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2
Motorola TMOS Power MOSFET Transistor Device Data
MGP20N35CL
TYPICAL ELECTRICAL CHARACTERISTICS
40
VGE = 10 V
I C , COLLECTOR CURRENT (AMPS)
TJ = 25°C
30
4V
20
10
3V
0
0
2
4
6
8
I C , COLLECTOR CURRENT (AMPS)
20
3V
10
0
1
2
3
4
5
6
7
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
VCE = 10 V
30
20
TJ = 125°C
25°C
10
1
4V
0
40
0
TJ = 125°C
5V
30
10
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (AMPS)
40
5V
VGE = 10 V
2
3
4
5
9
10
2.2
VGE = 5 V
2.0
IC = 20 A
1.8
15 A
1.6
10 A
1.4
1.2
1.0
–50
50
0
100
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
150
10000
TJ = 25°C
C, CAPACITANCE (pF)
VGE = 0 V
Cies
1000
Coes
100
Cres
10
1.0
0
25
50
75
100
125
150
175
200
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
Motorola TMOS Power MOSFET Transistor Device Data
3
20
8
Qg
IL, LATCH CURRENT (AMPS)
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
MGP20N35CL
6
Qge
Qgc
4
2
0
TJ = 25°C
IC = 20 A
0
10
20
30
3 mH
16
12
10 mH
8
4
0
40
0
25
50
75
100
125
Qg, TOTAL GATE CHARGE (nC)
TEMPERATURE (°C)
Figure 6. Gate–to–Emitter Voltage
versus Total Charge
Figure 7. Latch Current versus Temperature
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1.0
D = 0.5
0.2
0.1
0.1
P(pk)
0.05
0.02
t1
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1.0E – 05
1.0E – 04
1.0E – 03
1.0E – 02
1.0E – 01
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) RθJC(t)
1.0E+00
1.0E+01
t, TIME (s)
Figure 8. Thermal Response
4
Motorola TMOS Power MOSFET Transistor Device Data
MGP20N35CL
PACKAGE DIMENSIONS
–T–
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
T
S
4
A
Q
1 2 3
STYLE 9:
PIN 1.
2.
3.
4.
U
H
K
Z
L
R
V
J
G
D
N
GATE
COLLECTOR
EMITTER
COLLECTOR
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A–09
ISSUE Z
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◊
Motorola TMOS Power MOSFET Transistor
Device Data
MGP20N35CL/D
5
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