ISC BUS11 Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BUS11/A
DESCRIPTION
·High Switching Speed
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS11
450V (Min)-BUS11A
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
PARAMETER
Collector- Emitter
Voltage(VBE= 0)
Collector-Emitter
Voltage
MAX
BUS11
850
BUS11A
1000
BUS11
400
BUS11A
450
UNIT
V
V
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current
2
A
IBM
Base Current-Peak
4
A
PC
Collector Power Dissipation
@TC=25℃
100
W
Tj
Junction Temperature
200
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.75
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BUS11/A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUS11
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
MAX
IC= 0.1A ; IB= 0; L= 25mH
BUS11
VBE(sat)
TYP.
UNIT
400
BUS11A
VCE(sat)
MIN
V
450
IC= 3A; IB= 0.6A
1.5
B
Collector-Emitter
Saturation Voltage
V
BUS11A
IC= 2.5A; IB= 0.5A
1.5
BUS11
IC= 3A; IB= 0.6A
1.4
B
Base-Emitter
Saturation Voltage
V
BUS11A
IC= 2.5A; IB= 0.5A
1.4
ICES
Collector Cutoff Current
VCE=VCESMmax; VBE= 0
VCE= VCESMmax;VBE= 0;TJ= 125℃
1
2
mA
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
10
mA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
15
50
Switching Times , Resistive Load
ton
Turn-On Time
tstg
Storage Time
1.0
μs
4.0
μs
0.8
μs
For BUS11
IC= 3A ;IB1= -IB2= 0.6A
For BUS11A
IC= 2.5A ;IB1= -IB2= 0.5A
tf
Fall Time
isc Website:www.iscsemi.cn
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