MOTOROLA MJE15033 8.0 amperes power transistors complementary silicon 250 volts 50 watt Datasheet

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SEMICONDUCTOR TECHNICAL DATA
! . . . designed for use as high–frequency drivers in audio amplifiers.
• DC Current Gain Specified to 5.0 Amperes
hFE = 50 (Min) @ IC = 0.5 Adc
hFE = 10 (Min) @ IC = 2.0 Adc
• Collector–Emitter Sustaining Voltage —
VCEO(sus) = 250 Vdc (Min) — MJE15032, MJE15033
• High Current Gain — Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
• TO–220AB Compact Package
*Motorola Preferred Device
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY
SILICON
250 VOLTS
50 WATTS
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MAXIMUM RATINGS
Rating
MJE15032
MJE15033
Unit
VCEO
VCB
250
Vdc
250
Vdc
VEB
IC
5.0
Vdc
8.0
16
Adc
IB
PD
2.0
Adc
50
0.40
Watts
W/_C
PD
2.0
0.016
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
— Peak
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to Case
Characteristic
RθJC
2.5
_C/W
Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
PD, POWER DISSIPATION (WATTS)
TA TC
3.0
60
2.0
40
TC
1.0
20
0
0
TA
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1997
Motorola Bipolar Power Transistor Device Data
1
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
250
—
—
10
—
10
50
50
10
—
—
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 10 mAdc, IB = 0)
MJE15032, MJE15033
VCEO(sus)
Collector Cutoff Current
(VCB = 150 Vdc, IE = 0)
MJE15032, MJE15033
Vdc
µAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
µAdc
IEBO
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.5 Adc, VCE = 5.0 Vdc)
(IC = 1.0 Adc, VCE = 5.0 Vdc)
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
—
0.5
Vdc
Base–Emitter On Voltage
(IC = 1.0 Adc, VCE = 5.0 Vdc)
VBE(on)
—
1.0
Vdc
fT
30
—
MHz
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
(1) Pulse Test: Pulse Width
(2) fT = hfe• ftest.
1.0
0.7
0.5
2.0%.
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
300 µs, Duty Cycle
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
P(pk)
ZθJC(t) = r(t) RθJC
RθJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
Figure 2. Thermal Response
2
Motorola Bipolar Power Transistor Device Data
1.0 k
IC, COLLECTOR CURRENT (AMPS)
100
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation then the curves indicate.
The data of Figures 3 and 4 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T J(pk)
< 150_C. T J(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
100 µs
10
50 ms
250 ms
10 ms
1.0
0.1
0.01
1.0
10
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1000
Figure 3. MJE15032 & MJE15033
Safe Operating Area
NPN — MJE15032
PNP — MJE15033
1000
1000
h FE, DC CURRENT GAIN
h FE, DC CURRENT GAIN
150°C
25°C
100
–55°C
10
1.0
150°C
100
25°C
–55°C
10
1.0
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
10
0.1
Figure 5. PNP — MJE15033
VCE = 5 V DC Current Gain
Figure 4. NPN — MJE15032
VCE = 5 V DC Current Gain
10
V, VOLTAGE (VOLTS)
10
V, VOLTAGE (VOLTS)
10
1.0
IC, COLLECTOR CURRENT (AMPS)
–55°C
1.0
25°C
150°C
0.1
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 6. NPN — MJE15032
VCE = 5 V VBE(on) Curve
Motorola Bipolar Power Transistor Device Data
10
–55°C
1.0
25°C
150°C
0.1
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
10
Figure 7. PNP — MJE15033
VCE = 5 V VBE(on) Curve
3
NPN — MJE15032
PNP — MJE15033
100
150°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
10
25°C
1.0
–55°C
0.1
10
25°C
1.0
–55°C
150°C
0.1
0.01
0.01
1.0
IC, COLLECTOR CURRENT (AMPS)
0.1
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 9. PNP — MJE15033
VCE(sat) IC/IB = 10
Figure 8. NPN — MJE15032
VCE(sat) IC/IB = 10
100
150°C
150°C
10
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
100
25°C
1.0
–55°C
0.1
25°C
10
–55°C
1.0
0.1
0.01
0.01
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
0.1
10
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 10. NPN — MJE15032
VCE(sat) IC/IB = 20
V BE, BASE EMITTER VOLTAGE (VOLTS)
V BE, BASE EMITTER VOLTAGE (VOLTS)
10
–55°C
25°C
150°C
0.1
1.0
–55°C
25°C
150°C
0.1
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 12. NPN — MJE15032
VBE(sat) IC/IB = 10
4
10
Figure 11. PNP — MJE15033
VCE(sat) IC/IB = 20
10
1.0
10
10
0.1
1.0
IC, COLLECTOR CURRENT (AMPS)
Figure 13. PNP — MJE15033
VBE(sat) IC/IB = 10
Motorola Bipolar Power Transistor Device Data
10
PACKAGE DIMENSIONS
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 221A–06
TO–220AB
ISSUE Y
Motorola Bipolar Power Transistor Device Data
5
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6
◊
Motorola Bipolar Power Transistor Device
Data
MJE15032/D
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