KEC MJE13005D Triple diffused npn transistor Datasheet

SEMICONDUCTOR
MJE13005D
TECHNICAL DATA
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE HIGH SPEED POWER SWITCH
APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
A
O
C
Suitable for half bridge light ballast Applications.
F
Low base drive requirement.
E
MAXIMUM RATING (Ta=25
G
)
CHARACTERISTIC
B
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
800
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
10
V
Q
I
IC
5
Pulse
ICP
10
Base Current
IB
2
A
Collector Power Dissipation (Tc=25 )
PC
75
W
Junction Temperature
Tj
150
Tstg
-55 150
Storage Temperature Range
P
M
L
J
D
DC
Collector Current
K
N
A
H
N
1
2
3
1
2
3
1. BASE
2. COLLECTOR
DIM MILLIMETERS
_ 0.2
9.9 +
A
15.95 MAX
B
1.3+0.1/-0.05
C
_ 0.1
D
0.8 +
_ 0.2
E
3.6 +
_ 0.1
F
2.8 +
3.7
G
H
0.5+0.1/-0.05
1.5
I
_ 0.3
J
13.08 +
K
1.46
_ 0.1
1.4 +
L
_ 0.1
1.27+
M
_ 0.2
2.54 +
N
_ 0.2
4.5 +
O
_ 0.2
2.4 +
P
_ 0.2
9.2 +
Q
3. EMITTER
Equivalent Circuit
C
TO-220AB
B
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
E
SYMBOL
IEBO
VEB=9V, IC=0
MIN.
TYP.
MAX.
UNIT
-
-
10
A
hFE(1)
VCE=5V, IC=1A
18
-
35
hFE(2)
VCE=5V, IC=2A
8
-
-
IC=1A, IB=0.2A
-
-
0.5
IC=2A, IB=0.5A
-
-
0.6
IC=4A, IB=1A
-
-
1
IC=1A, IB=0.2A
-
-
1.2
IC=2A, IB=0.5A
-
-
1.6
Cob
VCB=10V, f=1MHz
-
65
-
pF
Transition Frequency
fT
VCE=10V, IC=0.5A
4
-
-
MHz
Turn-On Time
ton
-
-
0.15
S
150Ω
Emitter Cut-off Current
TEST CONDITION
2
-
5
S
VCC =300V
-
-
0.8
S
IF=2A
-
-
1.6
V
IF=0.4A
-
800
-
nS
IF=1A
-
1.4
-
S
IF=2A
-
1.9
-
S
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
VCE(sat)
VBE(sat)
OUTPUT
300µS
INPUT
tstg
Storage Time
Fall Time
tf
Diode Forward Voltage
VF
*Reverse recovery tims (di/dt=10A/ S)
trr
IB1=0.4A, IB2=-1A
DUTY CYCLE <
= 2%
V
I B1
IB1
IB2
V
I B2
*Pulse Test : Pulse Width = 5mS, Duty cycles 10%
Note : hFE Classification R : 18~27, O : 23~35
2009. 2. 26
Revision No : 4
1/4
MJE13005D
Fig 2. VBE(sat),VCE(sat) - IC
VCE=1V
Ta=125 C
-20 C
25 C
10
1
0.01
0.1
1
10
0.1
VCE(sat)
0.01
0.01
0.1
1
10
Fig 4. Cob - VCB
VCE=5V
Ta=125 C
25 C
-20 C
10
0.1
1
10
COLLECTOR OUTPUT CAPACITANCE
Cob (pF)
DC CURRENT GAIN hFE
VBE(sat)
1
Fig 3. hFE - IC
1
0.01
COLLECTOR CURRENT IC (A)
IC/IB=4
COLLECTOR CURRENT IC (A)
100
1k
COMMON
EMITTER
f=1MHz
Ta=25 C
500
300
100
50
30
10
5
3
1
1
3
10
30
100
300
1k
COLLECTOR CURRENT IC (A)
COLLECTOR-BASE VOLTAGE VCB (V)
Fig 5. IC - VCE
Fig 6. SWITCHING CHARACTERISTIC
5
10
IB=500mA
IB=400mA
IB=300mA
4
IB=200mA
3
IB=100mA
2
IB=50mA
1
0
1
2
3
4
5
6
7
8
9
tf
0.1
VCC=300V
0.01
10
COLLECTOR EMITTER VOLTAGE VCE (V)
Revision No : 4
tstg
1
IC=5IB1,=-2.5IB2
IB=0V
0
2009. 2. 26
10
COLLECTOR CURRENT IC (A)
SWITCHING TIME (µS)
DC CURRENT GAIN hFE
100
COLLECTOR-EMITTER SATURATION
VOLTAGE VBE(sat),VCE(sat) (V)
Fig 1. hFE - IC
0.1
1
10
COLLECTOR CURRENT IC (A)
2/4
MJE13005D
Fig 8. VF - IF
1.6
1.4
1.2
1.0
0.8
1.0
1.5
2.0
FORWARD DIODE VOLTAGE VF (V)
REVERSE RECOVERY TIME trr (µS)
Fig 7. trr - IF
10
1
0.1
0.01
FORWARD CURRENT IF (A)
0.1
1µs
10µs
1ms
5ms
DC
0.1
0.01
10
100
1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR POWER DISSIPATION PC (W)
COLLECTOR CURRENT IC (A)
100
1
10
FORWARD DIODE CURRENT IF (A)
Fig 10. PC - Ta
Fig 9. SAFE OPERATING AREA
10
1
100
Tc=Ta INFINITE HEAT SINK
80
60
40
20
0
0
25
50
75
100
125
150
175
200
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR CURRENT IC (pk) (A)
Fig 11. REVERSE BIASED SAFE
OPERATING AREA
10
IB1=2A
VBE(off)=-6.5V
L=50 H
VCC=20V
9
8
7
6
5
4
3
2
1
0
0
100 200 300 400 500 600 700 800 900
COLLECTOR-EMITTER CLAMP VOLTAGE VCE (V)
2009. 2. 26
Revision No : 4
3/4
MJE13005D
REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS
LC
(3)
IB1
T.U.T
IC
(1)
IB
VCE
VClamp
1) Fast electronic switch
2) Non-inductive resistor
3) Fast recovery rectifier
VCC
RBB(2)
VBB
+
For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter
junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage-current conditions during reverse
biased turn-off.
This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode.
Figure 11 gives the complete RBSOA characteristics.
2009. 2. 26
Revision No : 4
4/4
Similar pages