Jiangsu EMB3 Dual digital transistors (pnppnp) Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital Transistors (Built-in Resistors)
JC(T
EMB3
Dual Digital Transistors (PNP+PNP)
SOT-563
FEATURES
Two DTA143T chips in a package
z
z
Transistor elements are independent, eliminating interference
z
Mounting cost and area can be cut in half
MARKING: B3
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
V(BR)CBO
-50
V
Collector-emitter voltage
V(BR)CEO
-50
V
Emitter-base
V(BR)EBO
-5
V
Collector current
IC
-100
mA
Collector Power dissipation
PC
150
mW
Junction temperature
Tj
150
℃
Storage temperature
Tstg
-55~150
℃
Collector-base
voltage
voltage
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Min.
Typ
Max.
Unit
Conditions
Collector-base breakdown voltage
V(BR)CBO
-50
V
IC=-50μA
Collector-emitter breakdown voltage
V(BR)CEO
-50
V
IC=-1mA
Emitter-base breakdown voltage
V(BR)EBO
-5
V
IE=-50μA
Collector cut-off current
ICBO
-0.5
μA
VCB=-50V
Emitter cut-off current
IEBO
-0.5
μA
VEB=-4V
VCE(sat)
-0.3
V
IC=-5mA,IB=-2.5mA
Collector-emitter saturation voltage
DC current transfer ratio
hFE
100
Input resistance
R1
3.29
Transition frequency
fT
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600
VCE=-5V,IC=-1mA
4.7
6.11
KΩ
250
MHz
1
VCE=10V ,IE=-5mA,f=100MHz
C,May,2015
A,Jun,2014
SOT-563 Package Outline Dimensions
SOT-563 Suggested Pad Layout
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2
C,May,2015
SOT-563 Tape and Reel
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3
C,May,2015
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