Catalyst CAT808NTFI-25T3 Low-power precision voltage detector Datasheet

CAT808
Low-Power Precision Voltage Detector
FEATURES
DESCRIPTION
„ Ultra Low Current Consumption 2.4µA
The CAT808 is a high-precision voltage detector
designed for monitoring single cell and multi-cell batteries.
Voltage detection thresholds between 2.0V and 3.2V are
provided with 0.1V resolution and ±3.0% accuracy.
„ Accurate Voltage Detection Threshold
„ Fine Voltage Detection Threshold Resolution
„ Active Low Open Drain Output
The CAT808 open-drain output is active low until the
VDD voltage exceeds the detection threshold. A low
hysteresis is built into the device to minimize output
“chatter”, while VDD passes through the detection
threshold, and the output transitions high.
„ Available in 5-pin TSOT- 23 and 3-pin SOT- 89
RoHS compliant packages
„ Industrial temperature range -40°C to +85°C
APPLICATIONS
„ Battery-Powered Systems
After the CAT808 asserts the output high condition, it
continues to monitor VDD until it drops below the
detection threshold, when the output goes low until
VDD once again exceeds the detection threshold.
„ Power Supply Monitoring
„ Handheld and Portable Equipment
„ Processor Supervisor Reset
For Ordering Information details, see page 7.
PIN CONFIGURATION
SOT-89
TYPICAL APPLICATION
5-Lead Thin SOT-23
IN
VDD
OUT 1
OUT 1
VDD 2
VDD 2
GND 3
GND 3
5 NC
Battery
Voltage
CAT808
OUT
4 NC
10kΩ
DC-DC
CONVERTER
SHDN
OUT
GND
GND
Note: The value of the pull-up resistor is not critical
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 3024 Rev. A
CAT808
(1)
ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
-55 to +125
ºC
-65 to +150
ºC
-2.0 to VDD + 2.0
V
-2.0 to 7.0
V
+300
ºC
TSOT-23-5
250
mW
SOT-89
500
mW
Ratings
Units
+1.2 to +6.0
V
-40 to +85
ºC
Temperature under Bias
Storage Temperature
Voltage on any Pin with Respect to GND
(2)(3)
VDD with Respect to GND
Lead Soldering temperature (10 seconds)
Power Dissipation
RECOMMENDED OPERATING CONDITIONS
Parameters
VDD
Operating Temperature Range
DC ELECTRICAL CHARACTERISTICS
TA = -40ºC to +85ºC, VDD = 1.2V to 6.0V
Symbol
Parameter
Conditions
Min Typ. Max
VDET
Detection Voltage, 27
TA = -40ºC to +85ºC
2.62
2.7
2.78
VDET
Detection Voltage, 32
TA = -40ºC to +85ºC
3.12
3.2
3.28
VDD = 4.0V
-
2.4
5
VDD = 5.0V
-
3.5
7
VDD = 6.0V
-
5
10
0.6
2.9
1.4
5
-
mA
IDD
Current Consumption
VDD=1.2V
VDD=2.4V
Units
V
µA
IOUT
Output SinkCurrent
VDS = 0.5V
ILEAK
Output Leakage Current
VDS = 5.0V, VDD = 5.0V
-
-
1
µA
Response Time
–
-
-
60
µs
Detection Voltage
Temperature Coefficient(4)
TA = -40ºC to +85ºC
-
TPHL/LH
Δ - VDET
ΔTA ● -VDET
±10 ±100 ppm/ºC
Notes:
(1)
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only and functional operation of the devices at these or any other conditions outside of those listed in the operational sections of this
specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and
reliability.
(2)
The Minimum DC input voltage is -0.5V. During transitions, inputs may undershoot to -2.0V for periods of less than 20ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20ns.
(3)
Latch-up protection is provided for stresses up to 100mA on all pins from -1V to VCC +1V.
(4)
The temperature change ratio in the detection voltage [ppm/°C] is calculated by using the following equation:
Δ − VDET
× 1,000,000[ppm /º C]
ΔTA • - VDET
Doc. No. 3024 Rev. A
2
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT808
OPERATION – VOLTAGE DETECTOR
The CAT808 has an active low output that asserts
(pulls low) when the supply voltage drops below the
detection threshold voltage (VDET). The open-drain
output requires an external pull-up resistor between
the output pin and the supply voltage (as shown in
the typical application diagram). On power-up, ¯¯¯¯
OUT
is held active low until the supply voltage (VDD) rises
above VDET. While VDD is above VDET, ¯¯¯¯
OUT stays
high until VDD drops below VDET, then ¯¯¯¯
OUT once
again goes low.
BLOCK DIAGRAM
OUT
VDD
VOLTAGE
REFERENCE
TIMING DIAGRAM
VDD*
VDET(MAX)
VDET(MAX)
VDET
VDET
VDET(MIN)
GND
VDET(MIN)
TPLH
VOH
TPHL
OUT Slews with VDD
OUT
* Voltage of VDD below 1 volt will not be able to maintain low output.
PIN FUNCTIONS
Pin
Function
VDD
Voltage Input and Power Supply
GND
Ground Pin
¯¯¯¯
OUT
Active Low Open Drain output
NC
No Connect, the pin is electrically open
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
3
Doc. No. 3024 Rev. A
CAT808
TYPICAL ELECTRICAL OPERATING CHARACTERISTICS
Typical values at TA = 25°C.
VDD Supply Current vs. VDD Supply Voltage
VDET Detection Voltage vs. Temperature
2.71
5
Supply Current (μA)
4
2.705
VDET (V)
3
2
2.7
1
0
2
3
4
5
6
2.695
-40
Supply Voltage (V)
-5
30
65
100
Temperature (ºC)
Response time vs. Load Capacitance
IOUT Transistor Output Current vs. VDD Supply Voltage
100
10.00
8.00
1
+25ºC
(mA)
TPLH
10
6.00
IOUT
Response time [ms]
-40ºC
4.00
+90ºC
0.1
2.00
TPHL
0.01
0.001 0.00001
0.01
0.000001
0.1
0.0001
1
0.001
10
0.01
0.00
1.00
100
0.1
Load capacitance [nF]
Doc. No. 3024 Rev. A
1.50
2.00
2.50
VDD (V)
4
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT808
PACKAGE INFORMATION
5-LEAD TSOT-23 PACKAGE
e
e
E
E1
E1
e1
D
A2
GAUGE
PLANE
c
A
L2
L
A1
b
L1
SYMBOL
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
L2
q
MIN
—
0.01
0.80
0.30
0.12
NOM
—
0.05
0.87
—
0.15
2.90BSC
2.80BSC
1.60BSC
0.95BSC
1.90BSC
0.40
0.60REF
0.25BSC
0.30
0º
MAX
1.00
0.10
0.90
0.45
0.20
0.50
8º
Notes:
(1)
All dimensions are in millimeters.
(2)
Complies with JEDEC specification MO-193.
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
5
Doc. No. 3024 Rev. A
CAT808
3-LEAD SOT-89 PACKAGE
D
D1
E
H
L
e
e1
A
C
A1
b
b
b1
SYMBOL
A
A1
L
b
b1
C
D
D1
H
E
e1
e
MIN
1.40
0.30
0.80
0.36
0.41
0.38
4.40
1.40
3.94
2.40
2.90
1.45
NOM
1.50
0.40
–
0.42
0.47
0.40
4.50
1.60
–
2.50
3.00
1.50
MAX
1.60
0.50
1.20
0.48
0.53
0.43
4.60
1.75
4.25
2.60
3.10
1.55
Notes:
(1)
All dimensions are in millimeters.
(2)
Lead frame material: copper.
Doc. No. 3024 Rev. A
6
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
CAT808
EXAMPLE OF ORDERING INFORMATION
Prefix
Device #
CAT
Optional
Company ID
Suffix
808N
TB
Product Number
808N
I
-27
Temperature Range
I = Industrial (-40°C to 85°C)
Package
TB: TSOT-23-5
TF: SOT-89
Lead Finish
G: NiPdAu
Blank: Matte-Tin
Voltage Detection Level
-20: 2.0V
Tape & Reel
T: Tape & Reel
1: 1000 Reel
3: 3000 Reel
-32: 3.2V
Notes:
(1) All packages are RoHS-compliant (Lead-free, Halogen-free).
(2) The standard finish is NiPdAu.
(3) The device used in the above example is a CAT808NTBI-27-GT3 (TSOT-23-5, Industrial Temperature, 2.7V Detection Level, NiPdAu,
Tape & Reel).
(4) For additional detection voltage, package and temperature options, please contact your nearest Catalyst Semiconductor Sales office.
TOP MARKING
Part Number
Package
Detection Voltage
Top Marking
CAT808NTBI-27-G
TSOT-23-5
2.70
MVym
CAT808NTBI-32-G
TSOT-23-5
3.20
MVym
CAT808NTFI-27
SOT-89
2.70
AAxxx
CAT808NTFI-32
SOT-89
3.20
AAxxx
Notes:
(1) ym – Year and Month Code.
(2) xxx – Assembly location code and last 2 digits of assembly lot code.
(3) SOT-89 is offered in Matte-Tin only.
© 2006 Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
7
Doc. No. 3024 Rev. A
REVISION HISTORY
Date
11/07/06
Rev.
A
Reason
Initial Issue
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applications intended to support or sustain life, or for any other application in which the failure of the Catalyst Semiconductor product could create a situation where personal
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Catalyst Semiconductor reserves the right to make changes to or discontinue any product or service described herein without notice. Products with data sheets labeled
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Catalyst Semiconductor advises customers to obtain the current version of the relevant product information before placing orders. Circuit diagrams illustrate typical
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Corporate Headquarters
2975 Stender Way
Santa Clara, CA 95054
Phone: 408.542.1000
Fax:
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www.catsemi.com
Document No: 3024
Revision:
A
Issue date:
11/07/06
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