ON MPSA70 Amplifier transistor(pnp silicon) Datasheet

 Order this document
by MPSA70/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–40
Vdc
Emitter – Base Voltage
VEBO
–4.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–40
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
V(BR)EBO
–4.0
—
Vdc
ICBO
—
–100
nAdc
Characteristic
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MPSA70
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
DC Current Gain
(IC = –5.0 mAdc, VCE = –10 Vdc)
hFE
40
400
—
Collector – Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
VCE(sat)
—
–0.25
Vdc
fT
125
—
MHz
Cobo
—
4.0
pF
ON CHARACTERISTICS
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –5.0 mAdc, VCE = –10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSA70
TYPICAL NOISE CHARACTERISTICS
(VCE = – 5.0 Vdc, TA = 25°C)
ā
10
7.0
IC = 10 µA
5.0
In, NOISE CURRENT (pA)
en, NOISE VOLTAGE (nV)
1.0
7.0
5.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
30 µA
3.0
100 µA
300 µA
1.0 mA
2.0
BANDWIDTH = 1.0 Hz
RS ≈ ∞
IC = 1.0 mA
3.0
2.0
300 µA
1.0
0.7
0.5
100 µA
30 µA
0.3
0.2
1.0
10 µA
0.1
10
20
50
100 200
500 1.0 k
f, FREQUENCY (Hz)
2.0 k
5.0 k
10
10 k
20
50
Figure 1. Noise Voltage
100 200
500 1.0 k 2.0 k
f, FREQUENCY (Hz)
5.0 k
10 k
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(VCE = – 5.0 Vdc, TA = 25°C)
1.0 M
500 k
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
RS , SOURCE RESISTANCE (OHMS)
RS , SOURCE RESISTANCE (OHMS)
ā
1.0 M
500 k
5.0 dB
10
20
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
BANDWIDTH = 1.0 Hz
200 k
100 k
50 k
20 k
10 k
0.5 dB
5.0 k
1.0 dB
2.0 k
1.0 k
500
2.0 dB
3.0 dB
200
100
500 700 1.0 k
5.0 dB
10
20
RS , SOURCE RESISTANCE (OHMS)
Figure 3. Narrow Band, 100 Hz
1.0 M
500 k
30
50 70 100
200 300
IC, COLLECTOR CURRENT (µA)
500 700 1.0 k
Figure 4. Narrow Band, 1.0 kHz
10 Hz to 15.7 kHz
200 k
100 k
50 k
ƪ
Noise Figure is Defined as:
20 k
10 k
NF
0.5 dB
5.0 k
2.0 k
1.0 k
500
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
100
10
20
30
50 70 100
200 300
+ 20 log10
en2
ƫ
) 4KTRS ) In 2RS2 1ń2
4KTRS
en = Noise Voltage of the Transistor referred to the input. (Figure 3)
In = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10–23 j/°K)
T = Temperature of the Source Resistance (°K)
RS = Source Resistance (Ohms)
500 700 1.0 k
IC, COLLECTOR CURRENT (µA)
Figure 5. Wideband
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MPSA70
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN
400
TJ = 125°C
25°C
200
– 55°C
100
80
MPSA70
VCE = 1.0 V
VCE = 10 V
60
40
0.003 0.005
0.01
0.02 0.03
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
2.0
IC, COLLECTOR CURRENT (mA)
3.0
5.0 7.0
10
20
30
50 70 100
100
1.0
TA = 25°C
MPSA70
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. DC Current Gain
0.8
IC = 1.0 mA
0.6
10 mA
50 mA
100 mA
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
IB, BASE CURRENT (mA)
TA = 25°C
PULSE WIDTH = 300 µs
80 DUTY CYCLE ≤ 2.0%
300 µA
200 µA
150 µA
40
100 µA
50 µA
20
0
5.0 10
0
20
5.0
10
15
20
25
30
35
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
V, VOLTAGE (VOLTS)
1.2
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
0.5 1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (mA)
Figure 9. “On” Voltages
4
40
Figure 8. Collector Characteristics
1.4
0.2
250 µA
60
Figure 7. Collector Saturation Region
0.1
IB = 400 µA
350 µA
50
100
1.6
*APPLIES for IC/IB ≤ hFE/2
0.8
*qVC for VCE(sat)
25°C to 125°C
0
– 55°C to 25°C
0.8
25°C to 125°C
1.6
2.4
0.1
qVB for VBE
0.2
– 55°C to 25°C
0.5
1.0 2.0
5.0
10 20
IC, COLLECTOR CURRENT (mA)
50
100
Figure 10. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSA70
TYPICAL DYNAMIC CHARACTERISTICS
1000
700
500
500
VCC = 3.0 V
IC/IB = 10
TJ = 25°C
300
ā
ts
300
200
100
70
50
t, TIME (ns)
t, TIME (ns)
200
30
tr
20
10
7.0
5.0
1.0
100
70
50
tf
30
td @ VBE(off) = 0.5 V
20
2.0
3.0
20 30
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
50 70
10
–1.0
100
– 2.0 – 3.0 – 5.0 – 7.0 –10
– 20 – 30
IC, COLLECTOR CURRENT (mA)
ā
ā
ā
ā
ā
– 50 – 70 –100
ā
ā
ā
Figure 12. Turn–Off Time
500
10
TJ = 25°C
TJ = 25°C
7.0
VCE = 20 V
300
Cib
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 11. Turn–On Time
5.0 V
200
100
5.0
3.0
2.0
Cob
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
1.0
0.05
50
0.1
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 13. Current–Gain — Bandwidth Product
Figure 14. Capacitance
10
MPSA70
hfe ≈ 200
@ IC = –1.0 mA
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
50
200
VCE = –10 Vdc
f = 1.0 kHz
TA = 25°C
hoe, OUTPUT ADMITTANCE (m mhos)
20
hie , INPUT IMPEDANCE (k Ω )
VCC = – 3.0 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
100
70
50
30
20
VCE = 10 Vdc
f = 1.0 kHz
TA = 25°C
MPSA70
hfe ≈ 200
@ IC = 1.0 mA
10
7.0
5.0
3.0
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
100
Figure 15. Input Impedance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
0.1
0.2
0.5
20
1.0 2.0
5.0
10
IC, COLLECTOR CURRENT (mA)
50
100
Figure 16. Output Admittance
5
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
MPSA70
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
FIGURE 19
0.05
P(pk)
0.02
0.03
0.02
t1
0.01
0.01
0.01 0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
t2
2.0
5.0
10
20
50
t, TIME (ms)
100 200
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN–569)
ZθJA(t) = r(t) • RθJA
TJ(pk) – TA = P(pk) ZθJA(t)
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
Figure 17. Thermal Response
IC, COLLECTOR CURRENT (mA)
400
200
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector load
lines for specific circuits must fall below the limits indicated by the
applicable curve.
The data of Figure 18 is based upon T J(pk) = 150°C; TC or TA is
variable depending upon conditions. Pulse curves are valid for duty
cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from
the data in Figure 17. At high case or ambient temperatures, thermal
limitations will reduce the power than can be handled to values less
than the limitations imposed by second breakdown.
100 µs
100
TC = 25°C
dc
60
1.0 s
TA = 25°C
40
dc
20
TJ = 150°C
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
6.0
4.0
10 µs
1.0 ms
2.0
4.0
6.0 8.0 10
20
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
40
Figure 18. Active–Region Safe Operating Area
104
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
IC, COLLECTOR CURRENT (nA)
VCC = 30 V
10–1
A train of periodical power pulses can be represented by the model
as shown in Figure 19. Using the model and the device thermal
response the normalized effective transient thermal resistance of
Figure 17 was calculated for various duty cycles.
To find Z θJA(t), multiply the value obtained from Figure 17 by the
steady state value RθJA.
Example:
Dissipating 2.0 watts peak under the following conditions:
t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)
Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of
r(t) is 0.22.
10–2
The peak rise in junction temperature is therefore
∆T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C.
103
ICEO
102
101
ICBO
AND
ICEX @ VBE(off) = 3.0 V
100
–4
0
–2
0
0
+ 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160
TJ, JUNCTION TEMPERATURE (°C)
For more information, see AN–569.
Figure 19. Typical Collector Leakage Current
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSA70
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
7
MPSA70
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: [email protected] – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
8
◊
*MPSA70/D*
MPSA70/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
Similar pages