Vishay BA679 Rf pin diodes - single in minimelf sod-80 Datasheet

BA679, BA679S
www.vishay.com
Vishay Semiconductors
RF PIN Diodes - Single in MiniMELF SOD-80
FEATURES
• Wide frequency range 10 MHz to 1 GHz
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• Current controlled
attenuators
HF
resistance
in
adjustable
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
PARTS TABLE
PART
TYPE
DIFFERENTIATION
ORDERING CODE
TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
BA679
zr > 5 k
BA679-GS18 or BA679-GS08
-
Single diode
Tape and reel
BA679S
zr > 9 k
BA679S-GS18 or BA679S-GS08
-
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PART
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
30
UNIT
V
Forward continuous current
IF
50
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
TEST CONDITION
SYMBOL
VALUE
UNIT
on PC board
50 mm x 50 mm x 1.6 mm
RthJA
500
K/W
Tj
125
°C
Tstg
- 55 to + 150
°C
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 20 mA
VF
1
V
Reverse current
VR = 30 V
IR
0.05
μA
f = 100 MHz, VR = 0 V
CD
0.5
pF
f = 100 MHz, IF = 1.5 mA
rf
50

Diode capacitance
Differential forward resistance
Reverse impedance
f = 100 MHz, VR = 0 V
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
Rev. 1.8, 16-May-12
BA679
zr
5
BA679S
zr
9

k
k
4
μs
Document Number: 85529
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA679, BA679S
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
IF - Forward Current (mA)
100
10
Tamb = 25 °C
1
Scattering Limit
0.1
0.01
0
95 9735
0.4
0.8
1.2
1.6
2.0
VF - Forward Voltage (V)
rf - Differential Forward Resistance (Ω)
Fig. 1 - Forward Current vs. Forward Voltage
10 000
1000
100
10
1
0.001
f > 20 MHz
Tj = 25 °C
0.01
0.1
1
10
IF - Forward Current (mA)
95 9734
a - Typical Cross Modulation Distortion (dB)
Fig. 2 - Differential Forward Resistance vs. Forward Current
20
Π - Circuit with 10 dB Attenuation
V 0 = 40 dBmV
0
f 1 = 100 MHz unmodulated
- 20
- 40
- 60
- 80
95 9733
0
20
40
60
80
f 2 , modulated with 200 kHz, m = 100 % (MHz)
Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f2
Rev. 1.8, 16-May-12
Document Number: 85529
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BA679, BA679S
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80
1.6 (0.063)
1.4 (0.055)
Cathode indentification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
2.5 (0.098) max.
1.25 (0.49) min.
2 (0.079) min.
Foot print recommendation:
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
5 (0.197) ref.
96 12070
Rev. 1.8, 16-May-12
Document Number: 85529
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 02-Oct-12
1
Document Number: 91000
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