Freescale MRF9200LR3 880 mhz, 40 w avg. 26 v single n-cdma n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF9200L
Rev. 3, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRF9200LR3
MRF9200LSR3
Designed for broadband commercial and industrial applications with
frequencies to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Single - Carrier N - CDMA Performance @ 880 MHz: VDD = 26 Volts,
IDQ = 2400 mA, Pout = 40 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz.
Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 17.5 dB
Drain Efficiency — 25%
ACPR @ 750 kHz Offset — - 46.5 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 40 W AVG., 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF9200LR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF9200LSR3
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
625
3.6
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 60°C, 200 W CW
Case Temperature 80°C, 40 W CW
RθJC
0.28
0.34
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9200LR3 MRF9200LSR3
1
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
B (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 μAdc)
VGS(th)
1.5
2.7
3.5
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 2400 mAdc)
VGS(Q)
3
3.7
4.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 6.0 Adc)
VDS(on)
—
0.25
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6.7 Adc)
gfs
—
8.8
—
S
Crss
—
2.5
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. N - CDMA,
f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz
Offset. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
Gps
16
17.5
—
dB
ηD
22
25
—
%
ACPR
—
- 46.5
- 45
dBc
IRL
—
- 13
-9
dB
1. Part internally matched both on input and output.
MRF9200LR3 MRF9200LSR3
2
RF Device Data
Freescale Semiconductor
R3
R2
VBIAS
B2
+
+
+
C34
C33
C32
C31
C30
C29
B1
DRAIN
Z1
RF
INPUT
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
C7 Z11
Z10
C2
R1
C1
C4
C3
L1
C19
C6
C5
C20
C21
C22
DUT
C8
+
+
+
+
+
+
C23
C24
C25
C26
C27
C28
VSUPPLY
L2
C15
Z12
C9
Z13
Z14
Z15
C13
Z16
Z17
Z18
DRAIN
C10
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.015″ x 0.083″ Microstrip
0.048″ x 0.083″ Microstrip
0.352″ x 0.083″ Microstrip
0.086″ x 0.050″ Microstrip
0.367″ x 0.050″ Microstrip
0.417″ x 0.115″ Microstrip
0.068″ x 0.397″ Microstrip
C11
C12
Z8
Z9
Z10
Z11
Z12
Z13
C14
C16
0.335″ x 0.397″ Microstrip
0.134″ x 0.825″ x 0.090″ Taper
0.209″ x 0.825″ Microstrip
0.148″ x 0.825″ Microstrip
0.148″ x 0.750″ Microstrip
0.435″ x 0.750″ Microstrip
C17
Z14
Z15
Z16
Z17
Z18
PCB
RF
OUTPUT
C18
0.197″ x 0.750″ x 0.111″ Taper
0.331″ x 0.115″ Microstrip
0.557″ x 0.830″ Microstrip
0.078″ x 0.830″ Microstrip
0.414″ x 0.750″ Microstrip
Arlon, 0.030″, εr = 2.56
Figure 1. MRF9200LR3(SR3) Test Circuit Schematic
MRF9200LR3 MRF9200LSR3
RF Device Data
Freescale Semiconductor
3
C24 C26
C33
C34
C32
R2
R3
B2
B1
VGG
C31
C30
C22
C21
C25
C27
C20
C28
C17
C13 C15
R1
C1
C7
C2 C3
L1
C4
C8
CUT OUT AREA
C29
C5
VDD
C23
C9
C11
L2
C19
C14
C10
C16
C18
C6
C12
MRF9200 Drain
Rev. 3A
MRF9200 Drain
Rev. 3B
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF9200LR3(SR3) Test Circuit Component Layout
Table 5. MRF9200LR3(SR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
RF Bead, Surface Mount (0603)
2506033007Y0
Fair- Rite
B2
RF Bead, Surface Mount (0805)
2508051107Y0
Fair- Rite
C1
2.2 pF Chip Capacitor (0603)
GQM1885C2A2R2CB01B
Murata
C2, C19
47 pF Chip Capacitors (0805)
GQM2195C1H470JB01B
Murata
C3
2.0 pF Chip Capacitor (0603)
GQM1885C2A2R0BB01B
Murata
C4, C18
0.4- 2.5 pF Variable Capacitors
27283PC
Gigatronics
C5
8.2 pF Chip Capacitor (0603)
GQM1885C1H8R2DB01B
Murata
C6, C12
0.8- 8.0 pF Variable Capacitors
27291SL
Gigatronics
C7, C8
12 pF Chip Capacitors (0603)
GQM1885C1H120JB01B
Murata
C9, C10
10 pF Chip Capacitors (0805)
GQM2195C2A100JB01B
Murata
C11
5.1 pF Chip Capacitor (0805)
GQM2195C2A5R1DB01B
Murata
C13
3.3 pF Chip Capacitor (0805)
GQM2195C2A3R3CB01B
Murata
C14, C17
1.5 pF Chip Capacitors (0805)
GQM2195C2A1R5CB01B
Murata
C15, C16
22 pF Chip Capacitors (0805)
GQM2195C1H220JB01B
Murata
C20
0.56 μF Chip Capacitor (1825)
C1825C564J5RAC
Kemet
C21, C22, C31
2.2 μF Chip Capacitors (1825)
C1825C225J5RAC
Kemet
C23
10 μF, 50 V Tantalum Chip Capacitor
522Z- 050/100MTRE
Tecate
C24, C25, C26, C27
22 μF, 35 V Tantalum Chip Capacitors
T491X226K035AS
Kemet
C28
330 μF, 63 V Electrolytic Capacitor
NACZF331M100V (18X22)
Nippon
C29
10 μF Chip Capacitor (1206)
GRM31MF51A106ZA01B
Murata
C30
0.01 μF Chip Capacitor (1825)
C1825C103J1RAC
Kemet
C32, C33
22 μF, 25 V Tantalum Chip Capacitors
ECS - T1ED226R
Panasonic TE series
C34
47 μF, 16 V Tantalum Chip Capacitor
T491D476K016AS
Kemet
L1
22 nH Chip Inductor (0805)
L0805220JEW
AVX
L2
8 nH Inductor
A03T- 5
CoilCraft
R1
510 W, 1/10 W Chip Resistor (0805)
Dale/Vishay
R2, R3
11 W, 1/8 W Chip Resistors (1206)
Dale/Vishay
MRF9200LR3 MRF9200LSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
26
24
Gps, POWER GAIN (dB)
18.6
VDD = 26 Vdc, Pout = 40 W (Avg.), IDQ = 1800 mA
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes
8 Through 13
18.4
18.2
Gps
18
20
18
−45
17.8
−50
ACPR
−55
17.6
IRL
17.4
17.2
22
−60
ALT1
17
840
−65
850
860
870
880
890
900
910
−70
920
−8
−10
−12
−14
−16
−18
f, FREQUENCY (MHz)
IRL, INPUT RETURN LOSS (dB)
ηD
ACPR (dBc), ALT1 (dBc)
18.8
ηD, DRAIN
EFFICIENCY (%)
19
18
38
17.8
36
34
ηD
32
Gps
17.2
−35
17
16.8
−40
ACPR
−45
IRL
−50
16.6
16.4
VDD = 26 Vdc, Pout = 85 W (Avg.), IDQ = 1800 mA
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
−60
16.2
16
840
−55
ALT1
850
860
870
880
890
900
910
−65
920
−10
−12
−14
−16
−18
−20
f, FREQUENCY (MHz)
IRL, INPUT RETURN LOSS (dB)
17.4
ACPR (dBc), ALT1 (dBc)
Gps, POWER GAIN (dB)
17.6
ηD, DRAIN
EFFICIENCY (%)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 40 Watts Avg.
Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 85 Watts Avg.
19
IDQ = 3000 mA
Gps, POWER GAIN (dB)
18.5
18
2400 mA
17.5
1800 mA
17
16.5
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
16
1200 mA
15.5
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−25
−30
3000 mA
2400 mA
−35
IDQ = 1200 mA
−40
−45
−50
1800 mA
VDD = 26 Vdc
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
−55
−60
10
1
100
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF9200LR3 MRF9200LSR3
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−20
VDD = 26 Vdc, IDQ = 1800 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements
−30
−40
3rd Order
−50
−60
5th Order
−70
7th Order
−80
1
10
100
−10
VDD = 26 Vdc, Pout = 200 W (PEP), IDQ = 1800 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
−20
3rd Order
−30
−40
5th Order
−50
7th Order
−60
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
60
Ideal
Pout, OUTPUT POWER (dBm)
58
P3dB = 54.25 dBm (266 W)
56
P1dB = 53.1 dBm (204.1 W)
54
Actual
52
VDD = 26 Vdc, IDQ = 1800 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 880 MHz
50
48
31
33
35
37
39
41
Pin, INPUT POWER (dBm)
50
0
VDD = 26 Vdc, IDQ = 1800 mA, f = 880 MHz
N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13
40
−20
−40
30
Gps
ACPR
20
−60
ALT1
−80
10
ηD
0
1
10
−100
100
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
ALT1, CHANNEL POWER (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
Figure 9. Pulse CW Output Power versus
Input Power
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF9200LR3 MRF9200LSR3
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
60
Gps
Gps, POWER GAIN (dB)
18
50
16
40
14
30
20
12
VDD = 26 Vdc
IDQ = 1800 mA
f = 880 MHz
ηD
10
8
3
10
10
ηD, DRAIN EFFICIENCY (%)
20
0
350
100
Pout, OUTPUT POWER (WATTS) CW
20
60
Gps
Gps, POWER GAIN (dB)
18
40
20
16
ηD
0
14
VDD = 26 Vdc, IDQ = 1800 mA
f1 = 880 MHz, f2 = 880.1 MHz
Two−Tone Measurements, 100 kHz Tone Spacing
12
10
−20
−40
IMD
8
1
10
−60
400
100
ηD, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 12. Power Gain, Efficiency and IMD
versus Output Power
19
Gps, POWER GAIN (dB)
18
VDD = 28 V
17
26 V
20 V
16 V
16
24 V
12 V
15
IDQ = 1800 mA
f = 880 MHz
14
0
50
100
150
200
250
Pout, OUTPUT POWER (WATTS) CW
Figure 13. Power Gain versus Output Power
MRF9200LR3 MRF9200LSR3
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
MTTF FACTOR (HOURS X AMPS2)
1011
1010
109
108
90
110
130
150
170
190
210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
N - CDMA TEST SIGNAL
100
−10
−20
−30
1
−40
−50
0.1
(dB)
PROBABILITY (%)
10
IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8
Through 13) 1.2288 MHz Channel Bandwidth
Carriers. ACPR Measured in 30 kHz Bandwidth @
±750 kHz Offset. ALT1 Measured in 30 kHz
Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @
0.01% Probability on CCDF.
0.01
0.001
−60
−70
−80
−90
0.0001
0
2
4
6
8
10
1.2288 MHz
Channel BW
.. .............................................
.............
. . . .
..
..
..
...
..
..
.
..
..
..
..
−ALT1 in 30 kHz
+ALT1 in 30 kHz
..
..
Integrated BW
Integrated BW
.... .
.
.
..
...
.
.
.
.
.
...
.
.
.
.
...........
.
.
.
..
........
..................
....
.... . . ....
.
.
.
.
.
.....
..
............
.................
........
..........
.
...
.......
...........
.........
.
.
.........
.......
.
.
..
.
.
.
.
..
.
................
.
....
.
..
.
.
.
.
.
.
.
..
....
.
. ............
−ACPR
in
30
kHz
+ACPR
in
30
kHz
.
.
.
.
.
...
..
.
.........
.
...........
.
.
.
.
...............
.
...
Integrated BW
Integrated BW
..
......
.....
...........
.................
........
......
...
−100
PEAK−TO−AVERAGE (dB)
Figure 15. Single - Carrier CCDF N - CDMA
−110
−3.6 −2.9 −2.2
−1.5 −0.7
0
0.7
1.5
2.2
2.9
3.6
f, FREQUENCY (MHz)
Figure 16. Single - Carrier N - CDMA Spectrum
MRF9200LR3 MRF9200LSR3
8
RF Device Data
Freescale Semiconductor
Zo = 2 Ω
f = 895 MHz
f = 895 MHz
Zload
Zsource
f = 865 MHz
f = 865 MHz
VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
865
0.98 - j1.41
1.30 - j1.66
880
0.96 - j1.23
1.36 - j1.58
895
0.94 - j1.06
1.40 - j1.50
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance
MRF9200LR3 MRF9200LSR3
RF Device Data
Freescale Semiconductor
9
NOTES
MRF9200LR3 MRF9200LSR3
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
B
G
2X
1
Q
bbb
M
T A
B
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
M
B
(FLANGE)
3
K
2
bbb
bbb
M
ccc
M
M
D
T A
B
M
M
(INSULATOR)
M
T A
M
B
M
T A
M
B
M
N
R
ccc
M
T A
M
B
S
(LID)
aaa
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
C
E
T
A
(FLANGE)
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
B
(FLANGE)
2
bbb
bbb
M
M
D
T A
T A
M
M
B
B
M
M
(INSULATOR)
M
T A
M
B
R
ccc
M
N
ccc
MILLIMETERS
MIN
MAX
33.91
34.16
13.6
13.8
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
3.00
3.51
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
CASE 465B - 03
ISSUE E
NI - 880
MRF9200LR3
B
K
INCHES
MIN
MAX
1.335
1.345
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
.118
.138
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
F
A
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
M
T A
M
aaa
M
B
S
(LID)
M
T A
M
B
(LID)
M
(INSULATOR)
M
H
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.905
0.915
0.535
0.545
0.147
0.200
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.872
0.888
0.871
0.889
0.515
0.525
0.515
0.525
0.007 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
22.99
23.24
13.60
13.80
3.73
5.08
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
22.15
22.55
19.30
22.60
13.10
13.30
13.10
13.30
0.178 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
C
F
E
T
A
A
(FLANGE)
SEATING
PLANE
CASE 465C - 02
ISSUE D
NI - 880S
MRF9200LSR3
MRF9200LR3 MRF9200LSR3
RF Device Data
Freescale Semiconductor
11
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MRF9200LR3 MRF9200LSR3
Document Number: MRF9200L
Rev. 3, 5/2006
12
RF Device Data
Freescale Semiconductor
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