Sanyo CPH5902 High-frequency amplifier, am amplifier, low-frequency amplifier application Datasheet

CPH5902
Ordering number : ENN6962A
CPH5902
NPN Epitaxial Planar Silicon Transistor
N-Channel Silicon Junction FET
High-Frequency Amplifier, AM Amplifier,
Low-Frequency Amplifier Applications
Features
•
•
•
Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting
efficiency greatly.
The CPH5902 contains a 2SK2394-equivalent chip and a 2SC4639-equivalent chip in one package.
Drain and emitter are shared.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[FET]
Drain-to-Source Voltage
VDSX
VGDS
15
V
--15
V
IG
ID
10
mA
Drain Current
50
mA
Allowable Power Dissipation
PD
350
mW
Collector-to-Base Voltage
VCBO
55
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6
V
Gate-to-Drain Voltage
Gate Current
[TR]
Collector Current
150
mA
300
mA
Base Current
IC
ICP
IB
30
mA
Collector Dissipation
PC
350
mW
mW
Collector Current (Pulse)
[Common Ratings]
Total Dissipation
PT
500
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IMNo.6962-1/6
22004 TS IM TA-101143 / 52501 TS IM TA-3247
CPH5902
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
max
Unit
[FET]
Gate-to-Drain Breakdown Voltage`
V(BR)GDS
Gate Cutoff Current
IG=--10µA, VDS=0
VGS=--10V, VDS=0
VDS=5V, ID=100µA
--15
V
Cutoff Voltage
IGSS
VGS(off)
Drain Current
IDSS
VDS=5V, VGS=0
Forward Transfer Admittance
yfs
Ciss
VDS=5V, VGS=0, f=1kHz
38
mS
Input Capacitance
VDS=5V, VGS=0, f=1MHz
10.0
pF
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0, f=1MHz
2.9
pF
VDS=5V, Rg=1kΩ, ID=1mA, f=1kHz
1.0
dB
Noise Figure
NF
--1.0
--0.4
--0.7
10.0*
24
nA
--1.5
V
32.0*
mA
[TR]
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
hFE
DC Current Gain
Gain-Bandwidth Product
fT
VCB=35V, IE=0
VEB=4V, IC=0
VCE=6V, IC=1mA
135
0.1
µA
0.1
µA
400
VCE=6V, IC=10mA
200
Cob
VCB=6V, f=1MHz
1.7
Collector-to-Emitter Saturation Voltage
VCE(sat)
0.08
0.4
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=50mA, IB=5mA
IC=50mA, IB=5mA
0.8
1.0
V
Output Capacitance
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
IC=10µA, IE=0
IC=1mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0
See specified Test Circuit
Turn-ON Time
ton
tstg
Storage Time
Fall Time
tf
MHz
pF
55
V
50
V
6
V
0.15
µs
See specified Test Circuit
0.75
µs
See specified Test Circuit
0.20
µs
Marking : RB
* : The CPH5902 is classified by IDSS as follows : (unit : mA)
Rank
G
H
IDSS
10.0 to 20.0
16.0 to 32.0
The specifications shown above are for each individual FET or transistor.
Package Dimensions
Electrical Connection
unit : mmm
2196
2.9
4
0.15
3
3
2.8
0.05
1
2
1 : Collector
2 : Gate
3 : Source
4 : Emitter / Drain
5 : Base
Top view
0.6
1.6
0.6
5
4
0.2
5
2
0.2
0.4
0.4
0.9
0.95
0.7
1
1 : Collector
2 : Gate
3 : Source
4 : Emitter/Drain
5 : Base
SANYO : CPH5
No.6962-2/6
CPH5902
Switching Time Test Circuit
IB1
PC=20µs
D.C.≤1%
OUTPUT
IB2
INPUT
1kΩ
RL
2kΩ
VR
50Ω
+
470µF
+
220µF
VBE= --5V
VCC=20V
10IB1= --10IB2=IC=10mA
ID -- VDS
20
[FET]
ID -- VDS
20
[FET]
VGS=0
16
VGS=0
12
Drain Current, ID -- mA
Drain Current, ID -- mA
16
--0.1V
--0.2V
8
--0.3V
--0.4V
4
0
0.8
8
--0.3V
--0.4V
0
1.2
1.6
0
2.0
2
4
6
8
Drain-to-Source Voltage, VDS -- V
ITR10364
ID -- VGS
10
ITR10365
ID -- VGS
[FET]
16
[FET]
VDS=5V
IDSS=15mA
VDS=5V
20
--0.5V
--0.6V
--0.7V
Drain-to-Source Voltage, VDS -- V
22
--0.2V
4
--0.6V
0.4
12
--0.5V
--0.7V
0
--0.1V
14
A
6
4
m
10
2
25
2
--1.2
--1.0
--0.8
--0.6
--0.4
--0.2
Gate-to-Source Voltage, VGS -- V
100
A
m
=15
I DSS
3
A
30m
2
10
7
5
3
--0.8
--0.6
--0.4
--0.2
yfs -- IDSS
[FET]
VDS=5V
f=1kHz
5
--1.0
Gate-to-Source Voltage, VGS -- V
IT03287
yfs -- ID
7
0
--1.2
0
Forward Transfer Admittance, yfs -- mS
0
--1.4
Forward Transfer Admittance, yfs -- mS
C
°C
4
15
6
mA
S =2
0m
8
8
75°
A
10
10
°C
12
--2
5
14
12
Ta
=
Drain Current, ID -- mA
16
ID
S
Drain Current, ID -- mA
18
0
ITR10367
[FET]
VDS=5V
VGS=0
f=1kHz
7
5
3
2
10
2
3
5
7
1.0
2
3
5
7
10
Drain Current, ID -- mA
2
3
5
IT03288
7
10
3
5
Drain Current, IDSS -- mA
2
IT03289
No.6962-3/6
CPH5902
VGS(off) -- IDSS
2
3
--1.0
7
5
3
2
--0.1
2
3
5
Drain Current, IDSS -- mA
IT03290
10
Crss -- VDS
7
5
3
2
2
1.0
3
5
7
2
10
[FET]
7
[FET]
VDS=5V
ID=1mA
Rg=1kΩ
8
5
3
2
1.0
3
ITR10371
NF -- f
10
VGS=0
f=1MHz
6
4
2
7
2
1.0
3
5
7
2
10
0
0.01
Drain-to-Source Voltage, VDS -- V
NF -- Rg
10
3
[FET]
VDS=5V
ID=1mA
f=1kHz
8
6
4
2
2 3
5 7 1.0
Signal Source Resistance, Rg -- kΩ
5 71000
ITR10374
IC -- VCE
[TR]
µ
450
5 7 10
A
2 3
A
400µ
50
0µ
A
50
2 3
5 7 100
20
100µA
10
50µA
0
IB=0
0
0.2
0.4
0.6
0.8
Collector-to-Emitter Voltage, VCE -- V
2 3
5 7100
ITR10373
PD -- Ta
[FET]
20
40
60
80
100
120
140
160
IT07500
IC -- VCE
[TR]
50µA
45µA
40µA
35µA
8
30µA
6
25µA
20µA
4
15µA
10µA
5µA
IB=0
0
ITR10376
2 3
100
2
1.0
5 7 10
200
10
150µA
5 7 1.0
300
12
200µA
Frequency, f -- kHz
Ambient Temperature, Ta -- °C
350µA
30
2 3
350
0
0
2 3
300µA
250µA
40
5 7 0.1
400
Collector Current, IC -- mA
0
0.1
2 3
ITR10372
Allowable Power Dissipation, PD -- mW
7
Noise Figure, NF -- dB
10
Drain-to-Source Voltage, VDS -- V
5
Collector Current, IC -- mA
VGS=0
f=1MHz
1.0
7
Noise Figure, NF -- dB
Reverse Transfer Capacitance, Crss -- pF
10
[FET]
2
Input Capacitance, Ciss -- pF
Cutoff Voltage, VGS(off) -- V
VDS=5V
ID=100µA
7
Ciss -- VDS
[FET]
0
10
20
30
40
50
Collector-to-Emitter Voltage, VCE -- V
ITR10377
No.6962-4/6
CPH5902
IC -- VBE
160
[TR]
hFE -- IC
2
[TR]
VCE=6V
VCE=6V
140
DC Current Gain, hFE
120
100
80
60
Ta=75
°C
25°C
--25°C
Collector Current, IC -- mA
1000
40
20
7
5
0.2
0.4
0.6
25°C
--25°C
5
0.8
1.0
1.2
3
0.1
1.4
2
3
5
f T -- IC
1.0
2
3
5
2
10
3
5
100 2 3
ITR10379
Collector Current, IC -- mA
ITR10378
[TR]
cib -- VEB
5
[TR]
VCE=6V
5
f=1MHz
3
Input Capacitance, cib -- pF
Gain-Bandwidth Product, fT -- MHz
2
7
Base-to-Emitter Voltage, VBE -- V
7
Ta=75°C
100
0
0
3
3
2
100
7
5
7
5
3
2
1.0
2
3
5
7
2
10
3
5
7
Collector Current, IC -- mA
2
100
ITR10380
Cob -- VCB
5
5
[TR]
10
7
5
3
2
2
1.0
1.0
2
1.0
3
5
7
2
10
3
5
Collector-to-Base Voltage, VCB -- V
VBE(sat) -- IC
10
7
100
ITR10382
1.0
7
5
3
2
0.1
5°C
Ta=7
°C
--25
7
5
[TR]
3
5
7
2
10
3
5
7
2
100
ITR10383
PC -- Ta
400
7
[TR]
Collector Dissipation, PC -- mW
350
5
3
2
1.0
Ta= --25°C
7
25°C
75°C
5
3
1.0
2
°C
25
Collector Current, IC -- mA
IC / IB=10
7
10
ITR10381
[TR]
2
2
1.0
5
7
5
IC / IB=10
3
7
5
3
VCE(sat) -- IC
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
7
Emitter-to-Base Voltage, VEB -- V
f=1MHz
3
Output Capacitance, Cob -- pF
10
3
2
1.0
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
300
200
100
0
2
3
5
7
10
2
3
5
Collector Current, IC -- mA
7
2
100
ITR10384
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT07501
No.6962-5/6
CPH5902
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2004. Specifications and information herein are subject
to change without notice.
PS No.6962-6/6
Similar pages