Fairchild IRF620A Advanced power mosfet Datasheet

IRF620A
Advanced Power MOSFET
FEATURES
BVDSS = 200 V
Avalanche Rugged Technology
RDS(on) = 0.8 Ω
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 5 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
TO-220
Low RDS(ON) : 0.626 Ω (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
o
ID
Continuous Drain Current (TC=25 C)
VGS
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD
TJ , TSTG
TL
Units
200
V
5
Continuous Drain Current (TC=100 oC)
Drain Current-Pulsed
1
O
Gate-to-Source Voltage
IDM
Value
A
3.2
O
1
O
1
O
3
O
2
Total Power Dissipation (TC=25 oC )
Linear Derating Factor
Operating Junction and
18
+
_ 30
A
67
mJ
5
A
V
4.7
mJ
5.0
V/ns
47
W
0.38
W/ C
o
- 55 to +150
Storage Temperature Range
Maximum Lead Temp. for Soldering
o
300
Purposes, 1/8 “ from case for 5-seconds
C
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
RθJC
Junction-to-Case
--
2.65
RθCS
Case-to-Sink
0.5
--
RθJA
Junction-to-Ambient
--
62.5
Units
o
C/W
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRF620A
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆BV/ ∆TJ
Breakdown Voltage Temp. Coeff.
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
200
--
---
2.0
--
4.0
Gate-Source Leakage , Forward
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
100
--
--
0.8
Ω
VGS=10V,ID=2.5A
4
O
Ω
VDS=40V,ID=2.5A
4
O
Gate Threshold Voltage
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
--
2.41
--
Ciss
Input Capacitance
--
275
360
Coss
Output Capacitance
--
55
65
Crss
Reverse Transfer Capacitance
--
25
30
td(on)
Turn-On Delay Time
--
10
30
Rise Time
--
11
30
Turn-Off Delay Time
--
26
60
Fall Time
--
15
40
Qg
Total Gate Charge
--
12
17
Qgs
Gate-Source Charge
--
2.4
--
Qgd
Gate-Drain(“Miller”) Charge
--
6.2
--
tf
See Fig 7
0.24
Forward Transconductance
td(off)
VGS=0V,ID=250µ A
o
V/ C ID=250 µA
--
gfs
tr
V
Test Condition
V
nA
µA
pF
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=200V
o
VDS=160V,TC=125 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=100V,ID=5A,
ns
RG=18Ω
See Fig 13
4 O
5
O
VDS=160V,VGS=10V,
nC
ID=5A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
ISM
Pulsed-Source Current
1
O
--
--
18
VSD
Diode Forward Voltage
O
--
--
1.5
V
TJ=25oC ,IS=5A,VGS=0V
trr
Reverse Recovery Time
--
122
--
ns
TJ=25oC ,IF=5A
Qrr
Reverse Recovery Charge
--
0.51
--
µC
diF/dt=100A/µ s
4
5
A
Notes ;
1
O Repetitive Rating : Pulse Width Limited by Maximumo Junction Temperature
2
L=4mH, I AS=5A, VDD=50V, R G=27Ω, Starting T J =25 C
O
O3 ISD<_ 5A, di/dt <_ 180A/ µs, VDD <_BVDSS , Starting T J =25 oC
_ 2%
Pulse Test : Pulse Width = 250µ s, Duty Cycle <
4
O
Essentially
Independent
of
Operating
Temperature
5
O
Integral reverse pn-diode
in the MOSFET
4
O
N-CHANNEL
POWER MOSFET
IRF620A
Fig 2. Transfer Characteristics
VGS
101
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
[A]
Top :
ID , Drain Current
ID , Drain Current
[A]
Fig 1. Output Characteristics
100
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
10-1
10-1
100
101
25 oC
2
4
3. 250 µs Pulse Test
6
8
10
VGS , Gate-Source Voltage [V]
[A]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
2.0
IDR , Reverse Drain Current
RDS(on) , [Ω]
Drain-Source On-Resistance
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
- 55 oC
10-1
101
150 oC
100
VGS = 10 V
1.5
1.0
VGS = 20 V
0.5
@ Note : TJ = 25 oC
3
6
9
12
15
100
18
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
150 oC
o
25 C
10-1
0.4
0.0
0
101
ID , Drain Current [A]
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
[V]
400
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
VGS , Gate-Source Voltage
Capacitance
[pF]
500
C iss
300
200
C oss
100
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
00
10
101
VDS , Drain-Source Voltage [V]
VDS = 40 V
10
VDS = 100 V
VDS = 160 V
5
@ Notes : ID = 5.0 A
0
0
3
6
9
QG , Total Gate Charge [nC]
12
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
IRF620A
1.1
1.0
0.9
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75
-50
-25
0
25
50
75
100
125
150
3.0
2.5
2.0
1.5
1.0
@ Notes :
1. VGS = 10 V
0.5
2. ID = 2.5 A
0.0
-75
175
-50
TJ , Junction Temperature [ oC]
-25
0
25
50
75
100
125
150
175
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
[A]
Operation in This Area
is Limited by R DS(on)
ID , Drain Current
5
100 µs
101
1 ms
10 ms
DC
100
-1
10
@ Notes :
1. TC = 25 oC
4
3
2
1
2. TJ = 150 oC
3. Single Pulse
10-2
100
101
0
25
102
50
75
100
Tc , Case Temperature [ oC]
VDS , Drain-Source Voltage [V]
Thermal Response
Fig 11. Thermal Response
D=0.5
100
0.2
@ Notes :
1. Zθ J C (t)=2.65
o
C/W Max.
2. Duty Factor, D=t1 /t2
0.1
0.05
10- 1
3. TJ M -TC =PD M *Zθ J C (t)
0.02
PDM
0.01
single pulse
t1
t2
θ
Z JC(t) ,
ID , Drain Current
[A]
6
102
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
t 1 , Square Wave Pulse Duration
100
[sec]
101
125
150
N-CHANNEL
POWER MOSFET
IRF620A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Current Sampling (IG)
Resistor
Charge
Current Sampling (ID)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated VDS )
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
N-CHANNEL
POWER MOSFET
IRF620A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Similar pages