Eon EN29F002AT-90TCP 2 megabit (256k x 8-bit) flash memory Datasheet

EN29F002A / EN29F002AN
EN29F002A / EN29F002AN
2 Megabit (256K x 8-bit) Flash Memory
FEATURES
• JEDEC standard DATA polling and toggle
bits feature
• 5.0V ± 10% for both read/write operation
• Read Access Time
- 45ns, 55ns, 70ns, and 90ns
• Hardware RESET Pin
• Single Sector and Chip Erase
• Fast Read Access Time
- 70ns with Cload = 100pF
- 45ns, 55ns with Cload = 30pF
• Sector Protection / Temporary Sector
Unprotect ( RESET = VID)
• Sector Architecture:
One 16K byte Boot Sector, Two 8K byte
Parameter Sectors, one 32K byte and
three 64K byte main Sectors
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
Read and program another sector during
Erase Suspend Mode
• Boot Block Top/Bottom Programming
Architecture
•
-
(n/a on EN29F002AN)
• 0.23 µm triple-metal double-poly
triple-well CMOS Flash Technology
High performance program/erase speed
Byte program time: 10µs typical
Sector erase time: 500ms typical
Chip erase time: 3.5s typical
• Low Vcc write inhibit < 3.2V
• 100K endurance cycle
• Low Standby Current
- 1µA CMOS standby current-typical
- 1mA TTL standby current
• Package Options
• Low Power Active Current
- 30mA active read current
- 30mA program / erase current
- 32-pin PLCC
- 32-pin PDIP
- 32-pin TSOP (Type 1)
• Commercial and Industrial Temperature
Ranges
• JEDEC Standard program and erase
commands
GENERAL DESCRIPTION
The EN29F002A / EN29F002AN is a 2-Megabit, electrically erasable, read/write non-volatile flash memory.
Organized into 256K words with 8 bits per word, the 2M of memory is arranged in seven sectors (with
top/bottom configuration), including one 16K Byte Boot Sector, two 8K Byte Parameter sectors, and four main
sectors (one 32K Byte and three 64K Byte). Any byte can be programmed typically at 10µs. The EN29F002A /
EN29F002AN features 5.0V voltage read and write operation. The access times are as fast as 45ns to
eliminate the need for WAIT states in high-performance microprocessor systems.
The EN29F002A / EN29F002AN has separate Output Enable ( OE ), Chip Enable ( CE ), and Write
Enable ( W E ) controls which eliminate bus contention issues. This device is designed to allow
either single sector or full chip erase operation, where each sector can be individually protected
against program/erase operations or temporarily unprotected to erase or program. The device can
sustain
a
minimum
of
100K
program/erase
cycles
on
each
sector.
This Data Sheet may be revised by subsequent versions
1
or modifications due to changes in technical specifications.
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
TABLE 1. PIN DESCRIPTION
Pin Name
A0-A17
Function
Addresses
DQ0-DQ7
Data Input/Outputs
CE
OE
Chip Enable
WE
Write Enable
RESET
Hardware Reset
Sector Unprotect
(n/a for
EN29F002AN)
Vcc
Vss
FIGURE 1. LOGIC DIAGRAM
Vcc
8
18
A0 - A17
Output Enable
DQ0 - DQ7
EN29F002AT/B
CE
OE
WE
Supply Voltage
(5V ± 10% )
Ground
RESET
N/A on EN29F002AN
Vss
TABLE 2. BLOCK ARCHITECTURE
TOP BOOT BLOCK
BOTTOM BOOT BLOCK
SECTOR
ADDRESSES
SIZE (Kbytes)
ADDRESSES
SIZE (Kbytes)
6
3C000h - 3FFFFh
16
30000h - 3FFFFh
64
5
3A000h - 3BFFFh
8
20000h - 2FFFFh
64
4
38000h - 39FFFh
8
10000h - 1FFFFh
64
3
30000h - 37FFFh
32
08000h - 0FFFFh
32
2
20000h - 2FFFFh
64
06000h - 07FFFh
8
1
10000h - 1FFFFh
64
04000h - 05FFFh
8
0
00000h - 0FFFFh
64
00000h - 03FFFh
16
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
2
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
BLOCK DIAGRAM
Vcc
Vss
DQ0-DQ7
Block Protect
RESET
Erase Voltage Generator
N/A on EN29F002AN
Input/Output Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
CE
OE
STB
Vcc Detector
Timer
Address Latch
WE
STB
Data Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A0-A17
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
FIGURE 2. PDIP
PDIP Top View
NC on EN29F002AN
VPP
RESET
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
VCC
PGM
WE
NC
A17
A14
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
FIGURE 3. TSOP
A17
WE
NC on EN29F002AN
RESET
EN29F002A
FIGURE 4. PLCC
PLCC Top View
A12
A16
VCC A17
A12
A16 VCC
NC
A17
A15
RESET
A15 VPP WE
PGM
4
2
32
NC on EN29F002AN at RESET pin
30
A7
5
29
A14
A6
6
28
A13
A5
7
27
A8
A4
8
26
A9
A3
9
25
A11
A2
10
24
OE
A1
11
23
A10
A0
12
22
CE
DQ0
13
21
DQ7
3
1
15
14
31
17
16
19
18
20
DQ2 DQ3 DQ5
DQ1 VSS DQ4 DQ6
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
4
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
TABLE 3. OPERATING MODES
2M FLASH USER MODE TABLE
USER MODE
A9
A8
A6
A1
A0
Ax/y
DQ(0-7)
L
X
X
X
X
X
X
HI-Z
X
L
H
L
H
H
H
H
X
A9
X
VID
X
A8
X
L/H
X
A6
X
L
X
A1
X
L
X
A0
X
L
X
Ax/y
X
X
H
H
L
L
H
H
VID
VID
L/H
X
L
L
L
H
H
L
X
X
L
L
VID
H
VID
X
L
X
X
X
HI-Z
DQ(0-7)
HI-Z
MANUFACTURER
ID
DEVICE ID(T/B)
01h(protected)
00h(unprotected)
X
L
L
X
L
L
X
VID
H
X
H
H
VID
VID
A9
X
X
A8
X
H
A6
X
H
A1
X
L
A0
X
X
Ax/y
X
X
DIN(0-7)
X
CE
WE
OE
RESET
X
X
X
STANDBY
READ
OUTPUT DISABLE
READ
MANUFACTURER ID
READ DEVICE ID
VERIFY SECTOR
PROTECT
ENABLE SECTOR
PROTECT
SECTOR UNPROTECT
WRITE
TEMPORARY SECTOR
UNPROTECT
H
L
L
L
X
H
H
H
L
L
RESET
(n/a on EN29F002AN)
NOTES:
1) L = VIL, H = VIH, VID = 11.0V ± 0.5V
2) X = Don’t care, either VIH or VIL
TABLE 4. DEVICE IDENTIFICTION
2M FLASH MANUFACTURER/DEVICE ID TABLE
A8
A6
A1
A0
L
L
L
L
H
L
L
L
L
L
L
H
READ DEVICE ID
(Top Architecture)
READ DEVICE ID
(Bottom Architecture)
H
L
L
H
L
L
L
H
READ DEVICE ID
(Bottom Architecture)
H
L
L
H
READ
MANUFACTURER ID
READ
*
MANUFACTURER ID
READ DEVICE ID
(Top Architecture)
*
*
DQ(7-0)
HEX
CONTINUATION MANUFACTURER ID
7F
MANUFACTURER ID
1C
CONTINUATION DEVICE ID
7F
DEVICE ID
92
CONTINUATION DEVICE ID
7F
DEVICE ID
97
NOTES:
These modes (A8=H) are recommended for Manufacture/Device ID check.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
5
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
USER MODE DEFINITIONS
Reset Mode
EN29F002A features a Reset mode that resets the program and erase operation immediately to
read mode. If reset ( RESET = L) is executed when program or erase operation were in progress, the
program or erase which was terminated should be repeated since data will be corrupted. This pin is
not available for EN29F002AN.
Standby Mode
The EN29F002A / EN29F002AN has a CMOS-compatible standby mode which reduces the current
to < 1µA (typical). It is placed in CMOS-compatible standby when CE and the RESET pins are at
VCC ± 0.5 V ( CE pin only, for EN29F002AN). The device also has a TTL-compatible standby mode
which reduces the maximum VCC current to < 1mA. It is placed in TTL-compatible standby when CE
and RESET pins are at VIH. Another method of entering standby mode uses only the RESET pin
(n/a for EN29F002AN). When RESET pin is at VSS ± 0.3V, the device enters CMOS-compatible
standby with current typically reduced to < 1 µA. When RESET pin is at VIL, the device enters TTLcompatible standby with current reduced to < 1mA. When in standby modes, the outputs are in a
high-impedance state independent of the OE input.
Read Mode
The EN29F002A / EN29F002AN has two control functions which must be satisfied in order to obtain
data at the outputs. Chip Enable ( CE ) is the power control and should be used for device selection.
Output Enable ( OE ) is the output control and should be used to gate data to the output pins,
provided the device is selected. Read is selected when both CE and OE pins are held at VIL with
the W E pin held at VIH. Address access time (tACC) is equal to the delay from stable addresses to
valid output data. Assuming that addresses are stable, chip enable access time (tCE) is equal to the
delay from stable CE to valid data at output pins. Data is available at the outputs after output
enable access time (tOE) from the falling edge of OE , assuming the CE has been LOW and
addresses have been stable for at least tACC - tOE.
Output Disable Mode
When the CE or OE pin is at a logic high level (VIH), the output from the EN29F002A /
EN29F002AN is disabled. The output pins are placed in a high impedance state.
Auto Select Identification Mode
The manufacturer and device type can be identified by hardware or software operations. This mode
allows applications or programming equipment automatically matching the device with its
corresponding interface characteristics.
To activate the Auto Select Identification mode, the programming equipment must force 11.0 V ±
0.5V on address line A9 of the EN29F002AT/B. Two identifier bytes can then be sequenced from the
device outputs by toggling address lines A0 and A8 from VIL to VIH.
The manufacturer and device identification may also be read via the command register. By following
the command sequence referenced in the Command Definition Table (Table 5). This method is
desirable for in-system identification (using only + 5.0V).
When A0 = A1 = A6 = VIL and by toggling A8 from VIL to VIH, the Manufacturer ID can be read as Eon
= 7F, 1C (hex) to identify EON . When A0 = VIH, A1 = A6 = VIL, and by toggling A8 from VIL to VIH,
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
6
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
the Device Code can be read as 7F, 92 (hex) for EN29F002AT or as 7F, 97 (hex) for EN29F002AB
(See Table 4). All identifiers for manufacturer and device codes possess odd parity with the DQ7
defined as the parity bit.
Write Mode
Write is used for device programming and erase through the command register. This mode is
selected with CE = W E = L and OE = H. The contents of the command register are the inputs to
the internal state machine. The command register is a set of latches used to store the commands
along with the addresses and data information needed to execute that command. Address latching
occurs on the falling edge of W E or CE (whichever occurs later) and data latching occurs on the
rising edge of W E or CE (whichever occurs first).
Temporary Sector Unprotect Mode
EN29F002A allows protected sectors to be temporarily unprotected for making changes to data
stored in a protected sector in system (n/a for EN29F002AN). To activate the temporary sector
unprotect, the RESET pin must be set to a high voltage of VID (11V). In this mode, protected sectors
can be programmed or erased by selecting the sector addresses. Once the high voltage, VID, is
removed from RESET pin, all previously protected sectors will revert to their protected state.
RESET Hardware Reset Mode (not available on EN29F002AN)
Resetting the EN29F002A device is performed when the RESET pin is set to VIL and kept low for at
least 500ns. The internal state machine will be reset to the read mode. Any program/erase
operation in progress during hardware reset will be terminated and data may be corrupted.
If the RESET pin is tied to the system reset command, the device will be automatically reset to the
read mode and enable the system’s microprocessor to read the boot-up firmware from the FLASH
memory.
COMMAND DEFINITIONS
The operations of the EN29F002A are selected by one or more commands written into the
command register to perform Read/Reset Memory, Read ID, Read Sector Protection, Program,
Sector Erase, Chip Erase, Erase Suspend and Erase Resume. Commands are made up of data
sequences written at specific addresses via the command register. The sequences for the
specified operation are defined in the Command Table (Table 5). Incorrect addresses, incorrect
data values or improper sequences will reset the device to the read mode.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
7
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Table 5. EN29F002A Command Definitions
Command
Sequence
Read/Reset
Write
Cycles
Req’d
st
nd
1
Write Cycle
Addr
rd
2
Data
Write Cycle
Addr
th
3
Data
Write Cycle
Addr
Data
1
4
4
XXXh F0h
RA
555h AAh AAAh
555h AAh AAAh
RD
55h
55h
555h
555h
F0h
90h
4
555h
AAh AAAh
55h
555h
90h
4
555h
AAh AAAh
55h
555h
90h
AutoSelect Sector
Protect Verify
4
555h
AAh AAAh
55h
555h
90h
Byte Program
Chip Erase
4
6
6
1
1
555h
555h
555h
xxxh
xxxh
AAh AAAh
AAh AAAh
AAh AAAh
B0h
30h
55h
55h
55h
555h
555h
555h
A0h
80h
80h
Read/Reset
Read/Reset
AutoSelect
Manufacturer ID
AutoSelect Device ID
(Top Boot)
AutoSelect Device ID
(Bottom Boot)
Sector Erase
Sector Erase Suspend
Sector Erase Resume
th
4
Write Cycle
Addr
RA
000h/
100h
001h/
101h
001h/
101h
SA &
02h
PA
555h
555h
th
5
Data
6
Write Cycle
Addr
RD
7Fh/
1Ch
7Fh/
92h
7Fh/
97h
00h/
01h
PD
AAh AAAh
AAh AAAh
Data
Write Cycle
Addr
55h
55h
555h
SA
Notes:
RA = Read Address: address of the memory location to be read. This one is a read cycle.
RD = Read Data: data read from location RA during Read operation. This one is a read cycle.
PA = Program Address: address of the memory location to be programmed
PD = Program Data: data to be programmed at location PA
SA = Sector Address: address of the sector to be erased. Address bits A17-A13 uniquely select any sector.
The data is 00h for an unprotected sector and 01h for a protected sector.
Byte Programming Command
Programming the EN29F002A is performed on a byte-by-byte basis using a four bus-cycle operation
(two unlock write cycles followed by the Program Setup command and Program Data Write cycle).
When the program command is executed, no additional CPU controls or timings are necessary. The
program operation is terminated automatically by an internal timer. Address is latched on the falling
edge of CE or W E , whichever is last; data is latched on the rising edge of CE or W E , whichever
is first. The program operation is completed when EN29F002A returns the equivalent data to the
programmed location.
Programming status may be checked by sampling data on DQ7 ( DATA polling) or on DQ6 (toggle
bit). Changing data from 0 to 1 requires an erase operation. When programming time limit is
exceeded, DQ5 will produce a logical “1” and a Reset command can return the device to Read
mode.
EN29F002A ignores commands written during Byte Programming. If a hardware RESET occurs
during Byte Programming, data at the programmed location may get corrupted. Programming is
allowed in any sequence and across any sector boundary.
Chip Erase Command
An auto Chip Erase algorithm is employed when the Chip Erase command sequence is performed.
Although the Chip Erase command requires six bus cycles: two unlock write cycles, a setup
command, two additional unlock write cycles and the chip erase command, the user does not need
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
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©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
Data
10h
30h
EN29F002A / EN29F002AN
to do anything else after that, except check to see if the operation has completed. The Auto Chip
Erase algorithm automatically programs and verifies the entire memory array for an all “0” pattern
prior to the erase. Then the EN29F002A will automatically time the erase pulse width, verify the
erase, return the sequence count, provide a erase status through DATA POLLING (data on DQ7 is
“0” during the operation and “1” when completed, provided the status is not read from a protected
sector), and returns to the READ mode after completion of Chip Erase.
Sector Erase Command
Sector Erase requires six bus cycles: two unlock write cycles, a setup command, two additional
unlock write cycles, and the Sector Erase command. Any sector may be erased by latching any
address within the desired sector on the falling edge of W E while the Erase Command (30H) is
latched on the rising edge of W E . This device does not support multiple sector erase commands.
Sector Erase operation will commence immediately after the first 30h command is written. The first
sector erase operation must finish before another sector erase command can be given.
The EN29F002A device automatically programs and verifies all memory locations in the selected
sector for an all “0” pattern prior to the erase. Unselected sectors are unaffected by the Sector
Erase command. The EN29F002A requires no timing signals during sector erase. Erase is
completed when data on DQ7 becomes “1”, and the device returns to the READ mode after
completion of Sector Erase.
Erase Suspend / Resume Command
Erase suspend allows interruption of sector erase operations to perform data reads from sector not
being erased. Erase suspend applies only to Sector Erase operations.
EN29F002A ignores any commands during erase suspend other than the assertion of the RESET
pin (n/a for EN29F002AN) or Erase Resume commands. Writing erase resume continues erase
operations. Addresses are DON’T CARE when writing Erase Suspend or Erase Resume
commands.
EN29F002A takes 0.1 - 15 µs to suspend erase operations after receiving Erase Suspend command.
Check completion of erase suspend by polling DQ7 and/or DQ6. EN29F002A ignores redundant
writes of erase suspend command.
EN29F0002 defaults to erase-suspend-read mode while an erase operation has been suspended.
While in erase-suspend-read mode, EN29F002A allows reading data in any sector not undergoing
sector erase, which is treated as standard read mode.
Write the Resume command 30h to continue operation of Sector erase. EN29F002A ignores
redundant writes of the Resume command. EN29F002A permits multiple suspend/resume
operations during sector erase.
Sector Protect and Unprotect
The hardware sector protection feature disables both program and erase operations in any sector.
The hardware sector unprotection feature re-enables both program and erase operation in
previously protected sectors.
Sector protection/unprotection must be implemented using programming equipment. The procedure
requires a high voltage (VID) on address pin A9 and the control pins. Contact Eon Silicon Solution,
Inc. for an additional supplement on this feature.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
9
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
WRITE OPERATION STATUS
DQ7
DATA Polling
The EN29F002A provides DATA Polling on DQ7 to indicate to the host system the status of the
embedded operations. The DATA Polling feature is active during the Byte Programming, Sector
Erase, Chip Erase, Erase Suspend. (See Table 6)
When the Byte Programming is in progress, an attempt to read the device will produce the
complement of the data last written to DQ7. Upon the completion of the Byte Programming, an
attempt to read the device will produce the true data last written to DQ7. For the Byte Programming,
DATA polling is valid after the rising edge of the fourth WE or C E pulse in the four-cycle sequence.
When the embedded Erase is in progress, an attempt to read the device will produce a “0” at the
DQ7 output. Upon the completion of the embedded Erase, the device will produce the “1” at the DQ7
output during the read. For Chip Erase, the DATA polling is valid after the rising edge of the sixth
W E or CE pulse in the six-cycle sequence. For Sector Erase, DATA polling is valid after the last
rising edge of the sector erase W E or C E pulse.
DATA Polling must be performed at any address within a sector that is being programmed or
erased and not a protected sector. Otherwise, DATA polling may give an inaccurate result if the
address used is in a protected sector.
Just prior to the completion of the embedded operations, DQ7 may change asynchronously when
the output enable ( OE ) is low. This means that the device is driving status information on DQ7 at
one instant of time and valid data at the next instant of time. Depending on when the system
samples the DQ7 output, it may read the status of valid data. Even if the device has completed the
embedded operations and DQ7 has a valid data, the data output on DQ0-DQ6 may be still invalid.
The valid data on DQ0-DQ7 will be read on the subsequent read attempts.
The flowchart for DATA Polling (DQ7) is shown on Flowchart 5. The DATA Polling (DQ7) timing
diagram is shown in Figure 8.
DQ6
Toggle Bit I
The EN29F002A provides a “Toggle Bit” on DQ6 to indicate to the host system the status of the
embedded programming and erase operations. (See Table 6)
During an embedded Program or Erase operation, successive attempts to read data from the device
at any address (by toggling OE or CE ) will result in DQ6 toggling between “zero” and “one”. Once
the embedded Program or Erase operation is complete, DQ6 will stop toggling and valid data will be
read on the next successive attempts. During Byte Programming, the Toggle Bit is valid after the
rising edge of the fourth WE pulse in the four-cycle sequence. For Chip Erase, the Toggle Bit is
valid after the rising edge of the sixth-cycle sequence. For Sector Erase, the Toggle Bit is valid after
the last rising edge of the Sector Erase Command (30h) W E pulse.
In Byte Programming, if the sector being written to is protected, DQ6 will toggle for about
2µs, then stop toggling without the data in the sector having changed. In Sector Erase or Chip
Erase, if all selected sectors are protected, DQ6 will toggle for about 100 µs. The chip will then
return to the read mode without changing data in all protected sectors.
Toggling either CE or OE will cause DQ6 to toggle.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
10
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
The flowchart for the Toggle Bit (DQ6) is shown in Flowchart 6. The Toggle Bit timing diagram is
shown in Figure 9.
DQ5
Exceeded Timing Limits
DQ5 will indicate if the program or erase time has exceeded the specified limits (internal pulse
count). Under these conditions DQ5 will produce a “1”. (The Toggle Bit (DQ6) should also be
checked at this time to make sure that the DQ5 is not a “1” due to the device having returned to read
mode.) This is a failure condition which indicates that the program or erase cycle was not
successfully completed. DATA Polling (DQ7), Toggle Bit (DQ6) and Erase Toggle Bit (DQ2) still
function under this condition. Setting the CE to VIH will partially power down the device under those
conditions. The O E and W E pins will control the output disable functions as described in Table 3.
The DQ5 failure condition will also appear if the user tries to program a “1” to a location that was
previously programmed to a “0”. In this case, the device goes into Hang or Error mode out and
never completes the Embedded Program Algorithm. Hence, the system never reads valid data on
DQ7 and DQ6 never stops toggling. Once the device exceeds the timing limits, DQ5 will indicate a
“1”. Please note that this is not a device failure condition since the device was used incorrectly. If
timing limits are exceeded, reset the device. (See Table 6)
DQ3
Sector Erase Command Timeout
This device does not support multiple sector erase commands. DQ3 will go high immediately after
the first 30h command (the sixth write cycle). Any extra 30h commands will be ignored (or taken as
a resume command if erase suspended).
DQ2
Erase Toggle Bit II
In the sector erase operation, DQ2 will toggle with OE or CE when a read is attempted within the
sector that is being erased. DQ2 will not toggle if the read address is not within the sector that is
selected to be erased. In the chip erase operation, however, DQ2 will toggle with OE or CE
regardless of the address given by the user. This is because all sectors are to be erased. (See
Table 6)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
11
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Table 6. Status Register Bits
DQ
Name
Logic Level
‘1’
Definition
Erase Complete or
erase sector in Erase suspend
Erase On-Going
Program Complete or
data of non-erase sector
during Erase Suspend
‘0’
7
DATA
POLLING
6
TOGGLE
BIT
5
ERROR BIT
3
ERASE
TIME BIT
DQ7
DQ7
‘-1-0-1-0-1-0-1-’
DQ6
Program On-Going
Erase or Program On-going
Read during Erase Suspend
‘-1-1-1-1-1-1-1-‘
Erase Complete
‘1’
‘0’
‘1’
Program or Erase Error
Program or Erase On-going
Erase operation start
‘0’
Erase timeout period on-going
Chip Erase, Erase or Erase
suspend on currently
addressed
sector. (When DQ5=1, Erase
Error due to currently
addressed sector. Program
during Erase Suspend ongoing at current address
‘-1-0-1-0-1-0-1-’
2
TOGGLE
BIT
Erase Suspend read on
non Erase Suspend Sector
DQ2
Notes:
DQ7 DATA
Polling: indicates the P/E status check during Program or Erase, and on completion before checking bits DQ5
for Program or Erase Success.
DQ6 Toggle Bit: remains at constant level when P/E operations are complete or erase suspend is acknowledged.
Successive reads output complementary data on DQ6 while programming or Erase operation are on-going.
DQ5 Error Bit: set to “1’ if failure in programming or erase
DQ3 Sector Erase Command Timeout Bit: Operation has started. Only possible command is Erase suspend (ES).
DQ2 Toggle Bit: indicates the Erase status and allows identification of the erased sector.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
12
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
DATA PROTECTION
Power-up Write Inhibit
During power-up, the device automatically resets to READ mode and locks out write cycles. Even
with CE = VIL, W E = VIL and OE = VIH, the device will not accept commands on the rising edge of
WE.
Low VCC Write Inhibit
During VCC power-up or power-down, the EN29F002A locks out write cycles to protect against any
unintentional writes. If VCC < VLKO, the command register is disabled and all internal program or
erase circuits are disabled. Under this condition, the device will reset to the READ mode.
Subsequent writes will be ignored until VCC > VLKO.
Write “Noise” Pulse Protection
Noise pulses less than 5ns on OE , CE or WE will neither initiate a write cycle nor change the
command register.
Logical Inhibit
If CE =VIH or WE=VIH, writing is inhibited. To initiate a write cycle, CE and W E must be a logical
“zero”. If CE , W E , and OE are all logical zero (not recommended usage), it will be considered a
write.
Sector Protection/Unprotection
When the device is shipped, all sectors are unprotected. Each sector can be separately protected
against data changes. Using hardware protection circuitry enabled at user’s site with external
programming equipment, both program and erase operations may be disabled for any specified
sector or combination of sectors.
Verification of write protection for a specific sector can be achieved with an Auto Select ID read
command at location 02h where the address bits A17 - A13 select the defined sector (see Table 5).
A logical “1” at DQ0 means a protected sector and a logical “0” means an unprotected sector.
The Sector Unprotect disables sector protection in all sectors in one operation to implement code
changes. All sectors must be placed in protection mode using the protection algorithm mentioned
above before unprotection can be executed.
Additional details on this feature are provided in a supplement, which can be obtained by contacting
a representative of Eon Silicon Solution, Inc.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
13
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
EMBEDDED ALGORITHMS
Flowchart 1. Embedded Program
START
Write Program
Command Sequence
(shown below)
Data Poll Device
Increment
Address
Last
No
Address?
Yes
Programming Done
Flowchart 2. Embedded Program Command Sequence
See the Command Definitions section for more information.
5555H / AAH
2AAAH / 55H
5555H / A0H
PROGRAM ADDRESS / PROGRAM DATA
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
14
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Flowchart 3. Embedded Erase
START
Write Erase
Command Sequence
(shown below)
Data Polling Device or Toggle Bit
Successfully Completed
ERASE Done
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
15
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Flowchart 4. Embedded Erase Command Sequence
See the Command Definitions section for more information.
Chip Erase
Sector Erase
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/80H
5555H/80H
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/10H
Sector Address/30H
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
16
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Flowchart 5. DATA Polling Algorithm
Start
Read Data
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read Data
DQ7 = Data?
Yes
No
Fail
Pass
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
17
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Flowchart 6. Toggle Bit Algorithm
Start
Read Data
DQ6 = Toggle?
No
Yes
No
DQ5 = 1?
Yes
Read Data
DQ6 = Toggle?
No
Yes
Fail
Pass
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
18
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Flowchart 7. Temporary Sector Unprotect Algorithm
(Not available for EN29F002AN)
Start
RESET = VID
(Note 1)
Perform Erase or Program Operations
RESET = VIH
Temporary Block Unprotect Done
(Note 2)
Notes:
1. All protected sectors unprotected.
2. All previous protected sectors are protected once again.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
19
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +125°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –55°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . . . . –0.5 V to 7.0 V
A9, OE# (Note 2) . . . . . . . . . . . . . . . –0.5 V to 11.5 V
All other pins (Note 1) . . . . . . . . . . . . –0.5 V to Vcc+0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . 200 mA
Notes:
1.
2.
3.
Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, inputs may undershoot
VSS to –1.0V for periods of up to 50 ns and to –2.0 V for periods of up to 20 ns. See Left Figure below.
Maximum DC voltage on input and I/O pins is V CC + 0.5 V. During voltage transitions, input and I/O
pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Right Figure below.
Minimum DC input voltage on A9 pin is –0.5 V. During voltage transitions, A9 and OE# may
undershoot VSS to –1.0V for periods of up to 50 ns and to –2.0 V for periods of up to 20 ns. See Left
Figure. Maximum DC input voltage on A9 and OE# is 11.5 V which may overshoot to 12.5 V for
periods up to 20 ns.
No more than one output shorted to ground at a time. Duration of the short circuit should not be greater
than one second. Stresses above those listed under “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may
affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T A ) . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (T A ). . . . . . . . . . -40°C to +85°C
VCC Supply Voltages
VCC for ± 5% devices . . . . . . . . . . . . +4.75 V to +5.25 V
VCC for ± 10% devices . . . . . . . . . . . +4.50 V to +5.50 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Maximum Negative Overshoot
Waveform
Maximum Positive Overshoot
Waveform
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
20
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Table 7. DC Characteristics
(Ta = 0°C to 70°C or - 40°C to 85°C; VCC = 5.0V ± 10%)
Symbol
Parameter
Test Conditions
ILI
Input Leakage Current
ILO
Output Leakage Current
ICC1
Supply Current (read) TTL Byte
ICC2
Supply Current (Standby) TTL
ICC3
Supply Current (Standby) CMOS
ICC4
Supply Current (Program or Erase)
(1)
Min
Max
Unit
0V≤ VIN ≤ Vcc
±5
µA
0V≤ VOUT ≤ Vcc
±5
µA
CE# = VIL; OE# = VIH;
f = 6MHz
30
mA
CE# = VIH
RESET# = CE# = Vcc ± 0.2V
1.0
mA
5.0
µA
CE# = VIL; OE# = VIH;
Byte program, Sector or Chip
Erase in progress
30
mA
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
2
Vcc ± 0.5
V
VOL
Output Low Voltage
0.45
V
VOH
Output High Voltage TTL
IOH = -2.5 mA
2.4
V
Output High Voltage CMOS
IOH = -100 µA
Vcc - 0.4V
V
VID
ILIT
VLKO
IOL = 2 mA
A9 Voltage (Electronic Signature)
and RESET# Voltage (Temporary
Sector Unprotect)
A9 and RESET# Current (Electronic
Signature)
Supply voltage (Erase and
Program lock-out)
10.5
A9, RESET# = VID
3.2
11.5
V
100
µA
4.2
V
Notes:
(1) RESET# pin input buffer is always enabled so that it draws power if not at full CMOS supply voltages
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
21
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Table 8. AC CHARACTERISTICS
Read-only Operations Characteristics
Parameter
Symbols
JEDEC
Standard
Speed Options
Description
Test Setup
Min
-45
45
-55
55
-70
70
-90
90
Unit
ns
Max
45
55
70
90
ns
Max
45
55
70
90
ns
tAVAV
tRC
Read Cycle Time
tAVQV
tACC
Address to Output Delay
CE = VIL
OE = VIL
tELQV
tCE
Chip Enable To Output Delay
OE = VIL
tGLQV
tOE
Output Enable to Output Delay
Max
25
30
30
35
ns
tEHQZ
tDF
Chip Enable to Output High Z
Max
10
15
20
20
ns
tGHQZ
tDF
Output Enable to Output High Z
Max
10
15
20
20
ns
tAXQX
tOH
Output Hold Time from
Min
0
0
0
0
ns
tReady
RESET Pin Low to Read
Max
20
20
20
20
µs
Addresses, CE or OE ,
whichever occurs first
Mode (n/a for EN29F002AN)
Notes:
For -45,-55
For all others:
Vcc = 5.0V ± 5%
Output Load : 1 TTL gate and 30pF
Input Rise and Fall Times: 5ns
Input Rise Levels: 0.0 V to 3.0 V
Timing Measurement Reference Level, Input and Output: 1.5 V
Vcc = 5.0V ± 10%
Output Load: 1 TTL gate and 100 pF
Input Rise and Fall Times: 20 ns
Input Pulse Levels: 0.45 V to 2.4 V
Timing Measurement Reference Level, Input and Output: 0.8 V and 2.0 V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
22
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Table 9. AC CHARACTERISTICS
Write (Erase/Program) Operations
Parameter
Symbols
JEDEC
Standard
Description
tAVAV
tWC
Write Cycle Time
tAVWL
tAS
tWLAX
Speed Options
-45
-55
Min
45
55
Address Setup Time
Min
0
tAH
Address Hold Time
Min
tDVWH
tDS
Data Setup Time
tWHDX
tDH
tGHWL
-90
Unit
70
90
ns
0
0
0
ns
35
45
45
45
ns
Min
20
25
30
45
ns
Data Hold Time
Min
0
0
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
0
0
ns
tOEH
Output Enable
Read
MIn
0
0
0
0
ns
Hold Time
Toggle and
DATA Polling
Min
10
10
10
10
ns
Min
0
0
0
0
ns
tGHWL
Read Recovery Time before
-70
Write ( OE High to W E Low)
tELWL
tCS
CE SetupTime
Min
0
0
0
0
ns
tWHEH
tCH
CE Hold Time
Min
0
0
0
0
ns
tWLWH
tWP
Write Pulse Width
Min
25
30
35
45
ns
tWHDL
tWPH
Write Pulse Width High
Min
20
20
20
20
ns
Typ
7
7
7
7
µs
Max
200
200
200
200
µs
Typ
0.3
0.3
0.3
0.3
s
Max
5
5
5
5
s
Typ
3
3
3
3
s
Max
35
35
35
35
s
Min
50
50
50
50
µs
Min
500
500
500
500
ns
Min
500
500
500
500
ns
Min
4
4
4
4
µs
tWHWH1 tWHWH1
tWHWH2 tWHWH2
tWHWH3 tWHWH3
tVCS
tVIDR
tRP
tRSP
Programming Operation
Sector Erase Operation
Chip Erase Operation
Vcc Setup Time
Rise Time to VID
RESET Pulse Width
(n/a for EN29F002AN)
RESET Setup Time
(n/a for EN29F002AN)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
23
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Table 10. AC CHARACTERISTICS
Write (Erase/Program) Operations
Alternate CE Controlled Writes
Parameter
Symbols
Speed Options
JEDEC
Standard
Description
tAVAV
tWC
Write Cycle Time
tAVEL
tAS
tELAX
-45
-55
Min
45
55
Address Setup Time
Min
0
tAH
Address Hold Time
Min
tDVEH
tDS
Data Setup Time
tEHDX
tDH
-90
Unit
70
90
ns
0
0
0
ns
35
45
45
45
ns
Min
20
25
30
45
ns
Data Hold Time
Min
0
0
0
0
ns
tOES
Output Enable Setup Time
Min
0
0
0
0
ns
tOEH
Output Enable
0
0
0
0
0
ns
10
10
10
10
10
ns
Min
0
0
0
0
ns
Min
0
0
0
0
ns
Min
0
0
0
0
ns
Min
25
30
35
45
ns
Min
20
20
20
20
ns
Typ
7
7
7
7
µs
Max
200
200
200
200
µs
Typ
0.3
0.3
0.3
0.3
s
Max
5
5
5
5
s
Typ
3
3
3
3
s
Max
35
35
35
35
s
Min
50
50
50
50
µs
Min
500
500
500
500
ns
Min
500
500
500
500
ns
Min
4
4
4
4
µs
Read
Hold Time
Toggle and
Data Polling
Read Recovery Time before
Write ( OE High to CE Low)
tGHEL
tGHEL
tWLEL
tWS
W E SetupTime
tEHWH
tWH
W E Hold Time
tELEH
tCP
Write Pulse Width
tEHEL
tCPH
Write Pulse Width High
tWHWH1 tWHWH1
tWHWH2 tWHWH2
tWHWH3 tWHWH3
tVCS
tVIDR
tRP
tRSP
Programming Operation
Sector Erase Operation
Chip Erase Operation
Vcc Setup Time
Rise Time to VID
RESET
Pulse Width
(n/a for EN29F002AN)
RESET Setup Time
-70
(n/a for EN29F002AN)
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
24
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Table 11. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ
Limits
Max
Unit
Comments
Sector Erase Time
0.3
5
sec
Excludes 00H programming prior to
Chip Erase Time
3
35
sec
Byte Programming Time
7
200
µs
Chip Programming Time
2
5
sec
Erase/Program Endurance
100K
erasure
Excludes system level overhead
Minimum 100K cycles guaranteed
cycles
Table 12. LATCH UP CHARACTERISTICS
Parameter Description
Input voltage with respect to Vss on A9 and OE , and RESET
Min
Max
-1.0 V
12.0 V
Input voltage with respect to Vss on all other pins
-1.0 V
Vcc + 1.0 V
-100 mA
100 mA
Vcc Current
Note : These are latch up characteristics and the device should never be put under
these conditions. Refer to Absolute Maximum ratings for the actual operating limits.
Table 13. 32-PIN PLCC PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
4
6
pF
COUT
Output Capacitance
VOUT = 0
8
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
12
pF
Table 14. 32-PIN TSOP PIN CAPACITANCE @ 25°C, 1.0MHz
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
25
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Table 15. DATA RETENTION
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150°C
10
Years
125°C
20
Years
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
26
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
SWITCHING WAVEFORMS
Figure 5. AC Waveforms for READ Operations
Figure 6. AC Waveforms for Chip/Sector Erase Operations
Notes:
1. SA is the sector address for sector erase.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
27
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
SWITCHING WAVEFORMS (continued)
Figure 7. Program Operation Timings
Notes:
1.
2.
3.
4.
5.
PA is address of the memory location to be programmed.
PD is data to be programmed at byte address.
/DQ7 is the output of the complement of the data written to the device.
DOUT is the output of data written to the device.
Figure indicates last two bus cycles of four bus cycle sequence.
Figure 8. AC Waveforms for /DATA Polling During Embedded Algorithm
Operations
Notes:
*DQ7 = Valid Data (The device has completed the embedded operation).
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
28
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Figure 9. AC Waveforms for Toggle Bit During Embedded Algorithm
Operations
Notes:
*DQ6 stops toggling (The device has completed the embedded operation).
Figure 10. Temporary Sector Unprotect Timing Diagram
11V
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
29
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
SWITCHING WAVEFORMS (continued)
Figure 11. /RESET Timing Diagram
Figure 12. Alternate /CE Controlled Write Operation Timings
Notes:
1.
2.
3.
4.
5.
PA is address of the memory location to be programmed.
PD is data to be programmed at byte address.
/DQ7 is the output of the complement of the data written to the device.
DOUT is the output of data written to the device.
Figure indicates last two bus cycles of four bus cycle sequence.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
30
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
ORDERING INFORMATION
EN29F002A
T
- 45
P
C
P
PACKAGING CONTENT
Blank= Conventional
P=Pb free
TEMPERATURE RANGE
C = Commercial (0°C to +70°C)
I = Industrial (-40°C to +85°C)
PACKAGE
P = 32 Plastic DIP
J = 32 Plastic PLCC
T = 32 Plastic TSOP
SPEED
45 = 45ns
55 = 55ns
70 = 70ns
90 = 90ns
BOOT BLOCK ARCHITECTURE
T = Top Block
B = Bottom Block
BASE PART NUMBER
EN = EON Silicon Solution
29F = FLASH, 5V
002 = 256K x 8
A = Version A
(Blank) = with RESET function
N = without RESET function
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
31
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
PHYSICAL DIMENSIONS
PL 032 — 32-Pin Plastic Leaded Chip Carrier
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
32
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
PHYSICAL DIMENSIONS (continued)
PD 032 — 32-Pin Plastic DIP
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
33
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
PHYSICAL DIMENSIONS (continued)
TS 032 — 32-Pin Standard Thin Small
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
34
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
EN29F002A / EN29F002AN
Revisions List
Revision No Description
Date
A
3/26/2003
Initial draft
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
35
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. A, Issue Date: 2003/03/26
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