Diode Semiconductor Korea GBU15A --- GBU15M VOLTAGE RANGE: 50 --- 1000 V CURRENT: 15.0 A SILICON BRIDGE RECT IFIERS FEATURES GBU Ideal for printed circuit board Reliable low cos t cons truction utilizing m olded 22.3± 0.3 3.7± 0.35 4 45° - AC + 2.4± 0.2 2.5± 0.2 18.3± 0.5 Mounting pos ition: Any P. TY 2.2± 0.2 .9 R1 94V-O 1.9± 0.3 Plas tic m aterrial has U/L flam m ability clas s ification 3.8± 0.2 18.7± 0.2 7.9± 0.2 plas tic technique 1.2± 0.15 5.0± 0.3 0.5± 0.15 Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. GBU 15A GBU 15B GBU 15D GBU 15G GBU 15J GBU 15K GBU 15M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V R MS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average f orw ard Tc=100 output current IF (AV) 15.0 A IF SM 240.0 A VF 1.0 V 5.0 μA 500.0 mA Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load Maximum instantaneous f orw ard voltage at 7.5 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =125 Typical junction capacitance per leg (note 3) Typical thermal resistance per leg Operating junction temperature range Storage temperature range IR CJ 211 94 (note 2) RθJA 21.0 (note 1) RθJC 2.2 TJ - 55 ---- + 150 TSTG - 55 ---- + 150 pF /W N OTE: 1. Unit case m ounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm ) AI. Plate. 2. U nits m ounted in f ree air, no heat sink on P.C .B., 0.5x0.5"(12x12m m ) copper pads, 0.375"(9.5m m ) lead length. 3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts. www.diode.kr GBU15A --- GBU15M Diode Semiconductor Korea 24 21 18 15 12 9 6 3 0 50 0 150 100 FIG.2 -- TYPICAL FORWARD CHARACTERISTIC INSTANTANEOUS FORWARD CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES FIG.1 -- DERATING CURVE FOR OUTPUT RRECTIFIED CURRENT TEMPERATURE, PEAK FORWARD SURGE CURRENT, AMPERES FIG.3 -- MAXIMUM NON-REPETITIVE PEAK FORWARD 250 TJ =T J max. SINGLE SINE-WAVE (JEDEC METHOD) 200 150 100 50 0 1 10 100 100 50-400V 600-1000V 10 REVERSE VOLTAGE, VOLTS .01 0.2 0.4 0.6 0.8 1.2 1.0 1.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 500 TJ=150 100 TJ=125 10 5 0 -4 0 0 V 6 0 0 -1 0 0 0 V 1 .0 0 .1 TJ=25 .0 1 0 20 40 60 80 100 100 100 10 /W 200 4 0.1 FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE TRANSIENT THERMAL IMPEDANCE, JUNCTION CAPACITANCE, pF TJ=25 f=1.0 MHz VSIG=50mVp-p 1 T J =25 Pulse W idth =300uS PERCENT OF RATED PEAK REVERSE VOLTAGE FIG.5 -- TYPICAL JUNCTION CAPACITANCE PER LEG 10 .1 1.0 FIG.4 -- TYPICAL REVERSE CHARACTERISTIC NUMBER OF CYCLES AT 60Hz 1000 10 INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES DURGE CURRENT 100 1 .1 .01 .1 1 10 100 t, HEATING TIME, sec. www.diode.kr