Powerex Power MG400Q2YS60A Dual igbtmod Datasheet

MG400Q2YS60A
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
Compact IGBT
Series Module
400 Amperes/1200 Volts
A
D
L
J
K
W
N
M
V
E2
C1
C
H B
DETAIL "A"
F E
C2E1
U
W
R
R
T
S
Z
Q
P
Y
X
X
Q
G
C1
7
5
5
6
AA
FO
6
7
4
8
BB
E1/C2
3
1
4
BB
2
OT
1
2
FO
BB
3
DETAIL "A"
E2
SIGNAL TERMINAL
1 G(L)
2 FO(L)
3 E(L)
4 VD
5 G(H)
6 FO(H)
7 E(H)
8 OPEN
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
5/05
Inches
4.80±0.04
1.97±0.01
1.61±0.03
4.33±0.01
2.44±0.04
2.32±0.02
4.69±0.02
0.60
0.63
0.51
0.24
0.22 Dia.
1.42±0.03
Millimeters
122.0±1.0
50.0±0.3
41.0±0.8
110.0±0.3
62.0±1.0
59.0±0.5
119.0±0.5
15.24
16.0
13.0
6.0
5.5 Dia.
36.0±0.8
Dimensions
Inches
Millimeters
P
M6
M6
Q
0.79±0.03
20.0±0.8
R
1.02±0.03
26.0±0.8
S
1.44±0.03
36.7±0.8
T
0.24 Rad.
6.0 Rad.
U
0.02
0.64
V
0.60
15.3
W
0.41±0.03
10.5±0.8
X
1.02 -0.01/+0.04 26.0 -0.3/+1.0
Y
1.48 -0.02/+0.04 37.5 -0.5/+1.0
Z
0.01 Dia.
3.0 Dia.
AA
1.00±0.023
25.4±0.6
BB
0.10
2.54
Description:
Powerex Dual IGBTMOD™
Compact IGBT Series Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a halfbridge configuration, with each
transistor having a reverseconnected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Over-Current and
Over-Temperature Protection
£ Low VCE(sat)
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Welding Power Supplies
£ Laser Power Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. MG400Q2YS60A is a
1200V (VCES), 400 Ampere
Dual IGBTMOD™ Compact IGBT
Series Module.
Type
Current Rating
Amperes
VCES
Volts (x 20)
MG
400
60
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
Symbol
MG400Q2YS60A
Units
Tj
-20 to 150
°C
Storage Temperature
Tstg
-40 to 125
°C
Operating Temperature Range
Tope
-20 ~ 100
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M6 Main Terminal Screws
—
40
in-lb
Power Device Junction Temperature
Module Weight (Typical)
—
375
Grams
VISO
2500
Volts
Collector-Emitter Voltage
VCES
1200
Volts
Gate-Emitter Voltage
VGES
±20
Volts
IC
400
Amperes
ICP
800
Amperes
IE
400
Amperes
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
IGBT Inverter Sector
Collector Current (TC = 25°C)
Peak Collector Current (TC = 25°C)
Emitter Current (TC = 25°C)
Peak Emitter Current (TC = 25°C)
IEM
800
Amperes
Collector Dissipation (TC = 25°C)
PC
3750
Watts
IGBT Control Sector
Control Voltage (OT)
VD
20
Volts
Fault Input Voltage
VFO
20
Volts
Fault Input Current
IFO
20
mA
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
IGES
VGE = ±20V, VCE = 0V
—
—
-4 / +3
mA
VGE = 10V, VCE = 0V
—
—
100
nA
IGBT Inverter Sector
Gate Leakage Current
Collector-Emitter Cutoff Current
ICES
VCE = 1200V, VGE = 0V
—
—
1.0
mA
Gate-Emitter Cutoff Voltage
VGE(off)
VCE = 5V, IC = 400mA
6.0
7.0
8.0
Volts
Collector-Emitter Saturation Voltage
VCE(sat)
VGE = 15V, IC = 400A, Tj = 25°C
—
2.4
2.8
Volts
VGE = 15V, IC = 400A, Tj = 125°C
—
—
3.2
Volts
Input Capacitance
Cies
Inductive Load
td(on)
Switching
Times
2
VCE = 10V, VGE = 0V, f = 1MHz
—
31,000
—
pF
0.1
—
1.0
µs
toff
VCC = 600V, IC = 400A,
—
—
2.0
µs
tf
VGE = ±15V, RG = 5.1Ω
—
—
0.5
µs
—
—
0.5
µs
IE = 400A
—
2.4
2.8
Volts
Reverse Recovery Time
trr
Emitter-Collector Voltage
VEC
5/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1200 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Fault Output Current
OC
VGE = 15V
480
—
—
A
Over-Temperature
OT
—
100
—
125
°C
td(Fo)
VCC = 600V, VGE = ±15V
—
—
8
µs
Control Sector
Fault Output Delay Time
Thermal Characteristics
Characteristic
Junction to Case Thermal Resistance
Contact Thermal Resistance
Symbol
Condition
Min.
Typ.
Max.
Units
Rth(j-c)Q
IGBT (Per 1/2 Module)
—
—
0.033
°C/Watt
Rth(j-c)D
FWDi (Per 1/2 Module)
—
—
0.068
°C/Watt
—
0.013
—
°C/Watt
Value
Units
Rth(c-f)
—
Recommended Conditions for Use
Characteristic
Symbol
Condition
Supply Voltage
VCC
Applied across C1-E2 Terminals
≤750
Volts
Gate Voltage
VGE
—
14.8 ~ 17
Volts
Gate Resistance
RG
—
≥10.0
Ω
Switching Frequency
fC
—
0 ~ 20
kHz
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
800
800
COLLECTOR CURRENT, IC, (AMPERES)
12V
600
VGE = 20V
400
10V
200
800
Tj = 125°C
15V
9V
FORWARD CURRENT, IF, (AMPERES)
Tj = 25°C
COLLECTOR CURRENT, IC, (AMPERES)
FREE-WHEEL CHARACTERISTICS
(TYPICAL)
15V
600
12V
VGE = 20V
10V
400
9V
200
8V
VGE = 0V
Tj = 25°C
Tj = 125°C
Tj = -40°C
600
400
200
8V
0
0
1
2
3
4
0
5
2
3
4
0
5
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
FORWARD VOLTAGE, VF, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
12
10
IC = 800A
8
IC = 400A
6
IC = 200A
4
2
0
0
5
10
15
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
12
Tj = 125°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25°C
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
1
COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS)
12
5/05
0
10
IC = 800A
8
IC = 400A
6
IC = 200A
4
2
0
0
5
10
15
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
Tj = -40°C
10
IC = 800A
8
IC = 400A
6
IC = 200A
4
2
0
0
5
10
15
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1200 Volts
400
200
0
2
4
6
8
10
12
100
200
300
102
400
200
300
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
100
200
300
103
103
102
Tj = 25°C
Tj = 125°C
102
400
VCC = 600V
VGE = ±15V
RG = 5.1Ω
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
SWITCHING TIME, tf, (µs)
103
0
100
200
300
101
400
0
100
200
300
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
TURN-OFF TIME VS.
GATE RESISTANCE
(TYPICAL)
TURN-ON TIME VS.
GATE RESISTANCE
(TYPICAL)
104
102
100
200
300
COLLECTOR CURRENT, IC, (AMPERES)
400
103
102
0
5
400
104
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
SWITCHING TIME, ton, (µs)
SWITCHING TIME, toff, (µs)
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
400
104
104
0
100
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
0
0
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME, td(on), (µs)
SWITCHING TIME, td(off), (µs)
SWITCHING TIME, tr, (µs)
0
103
COLLECTOR CURRENT, IC, (AMPERES)
103
4
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
104
101
103
102
14
SWITCHING TIME, ton, (µs)
600
102
104
104
VCE = 5V
Tj = 25°C
Tj = 125°C
Tj = -40°C
SWITCHING TIME, toff, (µs)
COLLECTOR CURRENT, IC, (AMPERES)
800
0
TURN-ON TIME VS.
COLLECTOR CURRENT
(TYPICAL)
TURN-OFF TIME VS.
COLLECTOR CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
15
GATE RESISTANCE, RG, (Ω)
20
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
103
102
0
5
10
15
20
GATE RESISTANCE, RG, (Ω)
5/05
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1200 Volts
TURN-OFF DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
TURN-ON DELAY TIME VS.
GATE RESISTANCE
(TYPICAL)
104
103
0
5
10
15
102
20
101
20
5
10
15
10
15
SWITCHING LOSS, Eon, (mJ/PULSE)
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
0
100
200
300
101
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
100
400
0
100
200
300
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY CURRENT
(TYPICAL)
102
SWITCHING LOSS, Eon, (mJ/PULSE)
101
5
10
15
GATE RESISTANCE, RG, (Ω)
20
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
101
100
20
102
101
100
20
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
0
5
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
102
0
0
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
SWITCHING LOSS, Eoff, (mJ/PULSE)
SWITCHING TIME, tr, (µs)
15
RISE TIME VS.
GATE RESISTANCE
(TYPICAL)
102
SWITCHING LOSS, Eoff, (mJ/PULSE)
10
GATE RESISTANCE, RG, (Ω)
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
5/05
5
102
GATE RESISTANCE, RG, (Ω)
102
100
0
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
GATE RESISTANCE, RG, (Ω)
103
101
103
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
102
103
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
SWITCHING TIME, tf, (µs)
VCC = 600V
VGE = ±15V
IC = 400A
Tj = 25°C
Tj = 125°C
SWITCHING TIME, td(on), (µs)
SWITCHING TIME, td(off), (µs)
104
FALL TIME VS.
GATE RESISTANCE
(TYPICAL)
0
5
10
15
GATE RESISTANCE, RG, (Ω)
20
400
103
102
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
101
0
100
200
300
400
EMITTER CURRENT, IE, (AMPERES)
5
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG400Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
400 Amperes/1200 Volts
REVERSE RECOVERY LOSS VS.
FORWARD CURRENT
(TYPICAL )
REVERSE RECOVERY TIME
(TYPICAL)
VCC = 600V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Tj = 125°C
101
0
100
200
300
400
VCC = 600V
VGE = ±15V
RG = 5.1Ω
101
Tj = 25°C
Tj = 125°C
100
0
100
EMITTER CURRENT, IE, (AMPERES)
REVERSE BIAS
SAFE OPERATION AREA
(TYPICAL)
1000
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IiC, (AMPERES)
1000
800
600
400
VGE = ±15V
RG = 5.1Ω
Tj ≤ 125°C
200
0
0
400
800
1200
1600
300
800
Coes
Cres
103
VGE = 0V
f = 1MHz
TC = 25°C
10-1
100
101
102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
GATE-EMITTER VOLTAGE VS.
GATE CHARGE
(TYPICAL)
20
600
400
200
0
104
102
10-2
400
IC = 400A
RL = 1.5Ω
Tj = 25C
0
1000
2000
3000
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
IC = 400A
RL = 1.5Ω
Tj = 25C
16
12
600V
8
400V
200V
VCE = 0V
4
0
0
1000
2000
3000
GATE CHARGE, QG, (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
100
100
TC = 25°C
TRANSIENT IMPEDANCE, Rth(j-c)
TC = 25°C
TRANSIENT IMPEDANCE, Rth(j-c)
200
Cies
EMITTER CURRENT, IE, (AMPERES)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.033°C/W
10-4
10-3
10-2
10-1
TIME, (s)
6
CAPACITANCE, Cies, Coes, Cres, (pF)
102
105
102
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
REVERSE RECOVERY LOSS, Edsw, (mJ/PULSE)
REVERSE RECOVERY TIME, trr, (ns)
103
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
100
101
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 0.068°C/W
10-4
10-3
10-2
10-1
100
101
TIME, (s)
5/05
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