IGBT IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage IKD06N60RF TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz Datasheet IndustrialPowerControl IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage Features: C TRENCHSTOPTMReverseConducting(RC)technologyfor600V applicationsoffering •OptimizedEon,EoffandQrrforlowswitchinglosses •Operatingrangeof4to30kHz •SmoothswitchingperformanceleadingtolowEMIlevels •Verytightparameterdistribution •Maximumjunctiontemperature175°C •Shortcircuitcapabilityof5µs •Bestinclasscurrentversuspackagesizeperformance •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant(soldertemperature 260°C,MSL1) G E C CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: Domesticandindustrialdrives: •Compressors •Pumps •Fans KeyPerformanceandPackageParameters Type IKD06N60RF VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 6A 2.2V 175°C K06R60F PG-TO252-3 2 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 12.0 6.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 18.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 18.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 12.0 6.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 18.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C Ptot 100.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STA-020) °C 260 ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance,1) junction - case Rth(j-c) 1.50 K/W Diode thermal resistance,2) junction - case Rth(j-c) 3.60 K/W Thermal resistance, min. footprint junction - ambient Rth(j-a) 75 K/W Thermal resistance, 6cm² Cu on PCB junction - ambient Rth(j-a) 50 K/W 1) 2) Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple. Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple. 4 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - V VGE=15.0V,IC=6.0A Tvj=25°C Tvj=175°C - 2.20 2.30 2.50 - V - 2.10 2.00 2.40 - V 4.3 5.0 5.7 V VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat Diode forward voltage VF VGE=0V,IF=6.0A Tvj=25°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.11mA,VCE=VGE Zero gate voltage collector current1) ICES 40.0 µA 1000.0 Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=6.0A - 2.9 - S Integrated gate resistor rG Ω none ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 470 - - 24 - - 14 - - 48.0 - nC - 7.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s 1) VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=6.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=25°C - pF 46 Not subject to production test - verified by design/characterization 5 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 7 - ns - 8 - ns - 106 - ns - 22 - ns - 0.09 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.09 - mJ Total switching energy Ets - 0.18 - mJ - 48 - ns - 0.16 - µC - 7.4 - A - -195 - A/µs Tvj=25°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=23.0Ω,Lσ=50nH, Cσ=30pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VR=400V, IF=6.0A, diF/dt=770A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 8 - ns - 8 - ns - 115 - ns - 35 - ns - 0.15 - mJ IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff - 0.13 - mJ Total switching energy Ets - 0.28 - mJ - 74 - ns - 0.34 - µC - 10.3 - A - -177 - A/µs Tvj=175°C, VCC=400V,IC=6.0A, VGE=0.0/15.0V, rG=23.0Ω,Lσ=50nH, Cσ=30pF Lσ,CσfromFig.E DiodeCharacteristic,atTvj=175°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VR=400V, IF=6.0A, diF/dt=770A/µs dirr/dt 6 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries 3.5 10 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 3.0 2.5 2.0 1.5 1.0 tp=10µs 20µs 50µs 1 100µs 200µs 500µs DC 0.5 0.0 0.1 1 10 0.1 100 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tvj≤175°C,Ta=55°C,D=0.5,VCE=400V, VGE=15/0V,rG=23Ω,PCBmounting,6cm2Cu, Ptot=2,4W) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V) 100 14 90 12 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 80 70 60 50 40 30 10 8 6 4 20 2 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 7 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries 18 18 VGE=20V 16 15V 14 IC,COLLECTORCURRENT[A] 14 IC,COLLECTORCURRENT[A] 16 17V 13V 12 11V 9V 10 7V 8 6 17V 12 11V 2 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 9V 7V 6 2 0.5 13V 8 4 0.0 15V 10 4 0 VGE=20V 0.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=25°C) 1.5 2.0 2.5 3.0 3.5 4.0 4.0 Tj=25°C Tj=175°C VCEsat,COLLECTOR-EMITTERSATURATION[V] 16 14 IC,COLLECTORCURRENT[A] 1.0 Figure 6. Typicaloutputcharacteristic (Tvj=175°C) 18 12 10 8 6 4 2 0 0.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 5 6 7 8 9 10 11 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 12 VGE,GATE-EMITTERVOLTAGE[V] IC=0.5A IC=3A IC=6A IC=12A 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=10V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries td(off) tf td(on) tr 100 t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 100 td(off) tf td(on) tr 10 1 3 4 5 6 7 8 9 10 11 10 1 12 10 20 IC,COLLECTORCURRENT[A] 30 40 50 60 70 80 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=23Ω,Dynamictestcircuitin Figure E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=6A,Dynamictestcircuitin Figure E) VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 6.0 t,SWITCHINGTIMES[ns] 100 td(off) tf td(on) tr 10 1 25 50 75 100 125 150 Tvj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 175 typ. min. max. 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,11mA) 9 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries 0.6 0.5 Eoff Eon Ets 0.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 0.4 0.3 0.2 0.1 0.0 3 4 5 6 7 8 9 10 11 0.4 0.3 0.2 0.1 0.0 12 10 20 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,rG=23Ω,Dynamictestcircuitin Figure E) 50 60 70 80 0.4 Eoff Eon Ets Eoff Eon Ets 0.25 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 40 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175°C,VCE=400V, VGE=15/0V,IC=6A,Dynamictestcircuitin Figure E) 0.30 0.20 0.15 0.10 0.05 0.00 30 rG,GATERESISTOR[Ω] 25 50 75 100 125 150 0.2 0.1 0.0 300 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) 0.3 325 350 375 400 425 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175°C,VGE=15/0V, IC=6A,rG=23Ω,Dynamictestcircuitin Figure E) Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries 16 1000 120V 480V Cies Coes Cres 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 100 10 4 2 0 0 10 20 30 40 50 1 60 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=6A) 10 15 20 25 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 90 12 80 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 70 60 50 40 30 20 10 8 6 4 2 10 0 12 14 16 18 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 16 17 18 19 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTvj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTvj=150°C) 11 Rev.2.4,2014-03-12 IKD06N60RF Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] TRENCHSTOPTMRC-DrivesFastSeries 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse 1 D=0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 i: 1 2 3 4 ri[K/W]: 0.1032 0.7299 0.5682 0.0638 τi[s]: 7.9E-5 4.0E-4 1.8E-3 0.0307 0.01 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 1.0958 1.6643 0.7461 0.0827 τi[s]: 7.9E-5 2.8E-4 1.7E-3 0.02494 0.01 1E-7 1 tp,PULSEWIDTH[s] 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedanceasa functionofpulsewidth1)(seepage4) (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth2)(seepage4) (D=tp/T) 120 0.6 Tj=25°C, IF = 6A Tj=175°C, IF = 6A Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 100 80 60 40 20 0 500 600 700 800 0.5 Tj=25°C, IF = 6A Tj=175°C, IF = 6A 0.4 0.3 0.2 0.1 0.0 500 900 diF/dt,DIODECURRENTSLOPE[A/µs] 600 700 800 900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries 12 0 Tj=25°C, IF = 6A Tj=175°C, IF = 6A Tj=25°C, IF = 6A Tj=175°C, IF = 6A -50 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] 11 10 9 8 7 6 -100 -150 -200 -250 5 4 500 600 700 800 -300 500 900 diF/dt,DIODECURRENTSLOPE[A/µs] 600 700 800 900 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 18 3.0 Tj=25°C, VGE=0V Tj=175°C, VGE=0V 16 IF=0.5A IF=3A IF=6A IF=12A 2.5 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 14 12 10 8 6 2.0 1.5 1.0 4 0.5 2 0 0 1 2 3 0.0 4 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries PG - TO252 - 3 14 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 15 Rev.2.4,2014-03-12 IKD06N60RF TRENCHSTOPTMRC-DrivesFastSeries RevisionHistory IKD06N60RF Revision:2014-03-12,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-02-24 Final data sheet 2.2 2013-12-10 New value ICES max limit at 175°C 2.3 2014-02-26 Without PB free logo 2.4 2014-03-12 Storage temp -55...+150°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.4,2014-03-12