BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-04W BAS 125-06W ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Marking Ordering Code Pin Configuration Type Package BAS 125-04W 14s Q62702- 1 = A1 2 = C2 3=C1/A2 SOT-323 BAS 125-05W 15s Q62702- 1 = A1 2 = A2 3=C1/C2 SOT-323 BAS 125-06W 16s Q62702- 1 = C1 2 = C2 3=A1/A2 SOT-323 BAS 125W 13s Q62702- 1=A 3=C SOT-323 Maximum Ratings Parameter Symbol Diode reverse voltage VR 25 V Forward current IF 100 mA Surge forward current (t ≤ 10ms) IFSM 500 Total Power dissipation Ptot TS ≤ 25 °C Values Unit mW 250 Junction temperature Tj Storage temperature Tstg 150 °C - 55 ... + 150 Thermal Resistance RthJA ≤ 310 RthJA ≤ 425 Junction - soldering point, BAS125W RthJS ≤ 230 Junction - soldering point, BAS125-04W...06W RthJS ≤ 265 Junction ambient, BAS125W 1) Junction ambient, BAS 125-04W...06W 1) K/W 1) Package mounted on alumina 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Dec-20-1996 BAS 125W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR nA VR = 20 V - - 150 VR = 25 V - - 200 Forward voltage VF mV IF = 1 mA - 385 400 IF = 10 mA - 530 650 IF = 35 mA - 800 900 AC Characteristics Diode capacitance CT VR = 0 V, f = 1 MHz Differential forward resistance - - 1.1 Ω RF IF = 5 mA, f = 10 kHz Semiconductor Group pF - 2 16 - Dec-20-1996 BAS 125W Forward current IF = f (TA*;TS) * Package mounted on epoxy BAS 125W 100 mA IF 80 TS 70 60 TA 50 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RTHJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) BAS 125W BAS 125W 10 2 10 3 K/W RthJS IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 3 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-20-1996 BAS 125W Forward current IF = f (TA*;TS) * Package mounted on epoxy BAS 125-04W... (IF per diode) 100 mA IF 80 TS 70 60 50 TA 40 30 20 10 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RTHJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp) BAS 125-04W... BAS 125-04W... 10 2 10 3 K/W RthJS IFmax/IFDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 4 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-20-1996 BAS 125W Forward Current IF = f(VF) Diode capacitance CT = f (VR) f = 1MHz Reverse current IR = f (VR) Differential forward resistance RF = f(IF) f = 10kHz TA = Parameter Semiconductor Group 5 Dec-20-1996