Fairchild FDB082N15A N-channel powertrench mosfet Datasheet

FDB082N15A
N-Channel PowerTrench® MOSFET
150 V, 117 A, 8.2 mΩ
Features
Description
• RDS(on) = 6.7 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor®’s advanced PowerTrench® process that has
been tailored to minimize the on-state resistance while maintaining superior switching performance.
• Fast Switching Speed
• Low Gate Charge, QG = 64.5 nC(Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• High Power and Current Handling Capability
• Battery Protection Circuit
• RoHS Compliant
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
D
G
G
S
TO-263
(D2-PAK)
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
-Continuous (TC = 25oC, Silicon Limited)
Unit
V
±20
V
117
A
-Continuous (TC = 100oC, Silicon Limited)
83
- Pulsed
(Note 1)
468
A
(Note 2)
542
mJ
6
V/ns
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
FDB082N15A
150
- Derate above 25oC
294
W
1.96
W/oC
-55 to +175
oC
o
300
C
Thermal Characteristics
Symbol
Parameter
FDB082N15A
RθJC
Thermal Resistance, Junction to Case, Max.
0.51
RθJA
Thermal Resistance, Junction to Ambient, Max.
62.5
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
1
Unit
o
C/W
www.fairchildsemi.com
FDB082N15A N-Channel PowerTrench® MOSFET
March 2013
Device Marking
FDB082N15A
Device
FDB082N15A
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
150
-
-
V
-
0.08
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TC = 25oC
ID = 250μA, Referenced to
25oC
VDS = 120V, VGS = 0V
-
-
1
VDS = 120V, TC = 150oC
-
-
500
VGS = ±20V, VDS = 0V
-
-
±100
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
2.0
-
4.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 75A
-
6.7
8.20
mΩ
gFS
Forward Transconductance
VDS = 10V, ID = 75A
-
139
-
S
VDS = 25V, VGS = 0V
f = 1MHz
-
4645
6040
pF
-
1445
1880
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgs2
Gate Charge Threshold to Plateau
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance(G-S)
VDS = 75V, VGS = 0V
f = 1MHz
-
100
-
-
4570
6040
pF
-
460
1880
pF
-
20
-
pF
-
64.5
84
nC
-
19.1
-
nC
-
8.7
-
nC
-
13.5
-
nC
f=1MHz
-
2.5
-
Ω
VDD = 75V, ID = 75A
VGS = 10V, RGEN = 4.7Ω
-
22
54
ns
-
58
126
ns
VDS = 120V, ID = 75A
VGS = 10V
(Note4)
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
(Note4)
-
61
132
ns
-
26
62
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
117
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
468
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 75A
-
-
1.25
V
trr
Reverse Recovery Time
-
96
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 75A
dIF/dt = 100A/μs
-
268
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C, L = 3mH, ISD = 19A
3. ISD ≤ 75A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
2
www.fairchildsemi.com
FDB082N15A N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
300
VGS = 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
ID, Drain Current[A]
ID, Drain Current[A]
500
100
o
175 C
o
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 10V
2. 250μs Pulse Test
o
10
0.1
2. TC = 25 C
1
VDS, Drain-Source Voltage[V]
1
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3
4
5
VGS, Gate-Source Voltage[V]
500
IS, Reverse Drain Current [A]
12
10
VGS = 10V
8
VGS = 20V
6
100
o
175 C
10
*Notes:
1. VGS = 0V
*Note: TC = 25 C
0
100
200
300
ID, Drain Current [A]
1
0.0
400
Figure 5. Capacitance Characteristics
o
25 C
o
4
6
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
14
RDS(ON) [mΩ],
Drain-Source On-Resistance
2
2. 250μs Pulse Test
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
Figure 6. Gate Charge Characteristics
10
10000
VGS, Gate-Source Voltage [V]
Ciss
Capacitances [pF]
Coss
1000
Crss
100
*Note:
1. VGS = 0V
2. f = 1MHz
50
0.1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
VDS, Drain-Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
6
4
2
0
30
3
VDS = 30V
VDS = 75V
VDS = 120V
8
*Note: ID = 75A
0
14
28
42
56
Qg, Total Gate Charge [nC]
70
www.fairchildsemi.com
FDB082N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.05
1.00
0.95
*Notes:
1. VGS = 0V
2. ID = 250μA
0.90
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.10
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 75A
0.5
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
120
1000
100
100
10μs
10
100μs
ID, Drain Current [A]
ID, Drain Current [A]
2.0
0.0
-100
200
Figure 9. Maximum Safe Operating Area
1
2.5
1ms
Operation in This Area
is Limited by R DS(on)
10ms
SINGLE PULSE
DC
o
0.1
TC = 25 C
80
VGS = 10V
60
40
20
o
TJ = 175 C
o
0.01
0.1
o
RθJC = 0.51 C/W
1
10
100
VDS, Drain-Source Voltage [V]
0
25
300
RθJC= 0.51 C/W
50
75
100
125
150
o
TC, Case Temperature [ C]
175
Figure 11. Unclamped Inductive Switching
Capability
IAS, AVALANCHE CURRENT (A)
300
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
100
o
STARTING TJ = 25 C
10
o
STARTING TJ = 150 C
1
0.001
0.01
0.1
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
4
www.fairchildsemi.com
FDB082N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDB082N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
0.1
0.2
0.1
PDM
0.05
0.01
t1
0.02
0.01
*Notes:
Single pulse
1E-3
-5
10
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
t2
o
1. ZθJC(t) = 0.51 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
5
-1
10
0
10
www.fairchildsemi.com
FDB082N15A N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
6
www.fairchildsemi.com
FDB082N15A N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
7
www.fairchildsemi.com
FDB082N15A N-Channel PowerTrench® MOSFET
Mechanical Dimensions
D2PAK
Dimensions in Millimeters
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
8
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2011 Fairchild Semiconductor Corporation
FDB082N15A Rev. C1
9
www.fairchildsemi.com
FDB082N15A N-Channel PowerTrench® MOSFET
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