CYSTEKEC MEN09N03BJ3 N-channel logic level enhancement mode power mosfet Datasheet

CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 1/7
N-Channel Logic Level Enhancement Mode Power MOSFET
MEN09N03BJ3
BVDSS 30V
ID
50A
RDSON 9mΩ
Features
• VDS=30V, ID=50A, RDS(ON)=9mΩ
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant package
Symbol
• Repetitive Avalanche Rated
• Fast Switching Characteristic
Outline
MEN09N03BJ3
TO-252
G:Gate
D:Drain
S:Source
G D S
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=37.5A,Rg=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Power Dissipation (TC=25℃)
Power Dissipation (TC=100℃)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
50
35
140 *1
37.5
70
15
*2
60
32
-55~+175
Unit
V
V
A
A
A
A
mJ
mJ
W
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=25A, Rated VDS=25V N-CH
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle≤1%
MEN09N03BJ3
CYStek Product Specification
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 2/7
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
75
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
30
1.0
50
-
1.7
20
7.5
12
3.0
±100
1
25
9
15
V
V
S
nA
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±20
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
VGS =10V, VDS=10V
VGS =10V, ID=25A
VGS =5V, ID=20A
-
1.7
23
13
4.7
7.4
10
8
30
5
2020
275
160
-
-
22
180
12
50
140
1.3
-
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
ID(ON)
*RDS(ON)
Dynamic
Rg
*Qg(VGS=10V)
*Qg(VGS=5V)
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*IRM(REC)
*Qrr
μA
A
mΩ
Ω
VGS=15mV, VDS=0, f=1MHz
nC
ID=25A, VDS=15V, VGS=10V
ns
VDS=15V, ID=25A, VGS=10V,
RG=2.7Ω, RD=0.6Ω
pF
VGS=0V, VDS=15V, f=1MHz
A
V
ns
A
nC
IF=IS, VGS=0
IF=IS, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
MEN09N03BJ3
MEN09N03BJ3
Package
TO-252
(RoHS compliant)
Shipping
Marking
2500 pcs / Tape & Reel
09N03
CYStek Product Specification
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 3/7
CYStech Electronics Corp.
Characteristic Curves
ON-REGION CHARACTERISTIC
10V
7V
6V
V GS= 3.5V
RDS(ON), NORMALIZED
R ,NORMALIZED DRAINSOURCE
ON-RESISTANCE
DRAIN - SOURCE ON - RESISTANCE
80
3
5V
4.5V
60
3.5V
20
V = 3.0V
GS
0
0
1
0.5
2.5
4.5V
2
5V
5.5V
1.5
6V
7V
DS(ON)
4V
40
D
ID,I DRAIN-SOURCE
CURRENT(A)
,DRAIN - SOURCE CURRENT(
A)
ON-RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE
ON- RESISTANCE VARIATION WITH DRAIN CURRENT AND GATE VOLTAGE
ON-REGION CHARACTERISTIC
100
2.5
3
3.5
1.5
2
V ,DRAIN- SOURCEVOLTAGE( V)
4
4.5
10V
1
0.5
0
5
ON-RESISTANCE VARIATION WITH GATE TO SOURCE VOLTAGE
ON-RESISTANCE
VARIATION
WITH
TEMPERATURE
ON- RESISTANCE
VARIATION WITH
TEMP
ERATURE
ON-RESISTANCEVARIATION WITHGATE-TO-SOURCEVOLTAGE
0.030
1.8
ID = 25A
VGS= 10V
RDS(ON)
, ON-RESISTANCE(OHM)
R ,ON-RESISTANCE(OHM)
ID = 25A
1.6
1.4
1.2
DS(ON)
1.0
0.8
0.025
0.020
0.015
TA = 25°C
0.010
0
-50
-25
0
25
50
75
100
125
150
TA = 125°C
175
6
4
VGS ,GATETOSOURCEVOLTAGE
2
j
BODY DIODE FORWARD VOLTAGE VARIATION WITH
BODY
DIODECURRENT
FORWARD VOLTAG
EVARIATION WITH SOURCE
SOURCE
AND TEMPERATURE
TRANSFER
CHARACTERISTICS
TRANSFERCHAR
ACTERISTICS
CURRENTAND TEMPERATURE
50
60
VDS=10V
VGS = 0V
TA = -55 °C
40
25 °C
125 °C
30
20
10
I S ,REVERSEDRAIN
DRAINCURRENT(A)
CURRENT( A )
IS, REVERSE
VDS= 10V
0
10
8
VGS, GATE TO SOURCE VOLTAGE(V)
TION TEMPER
ATURE(° C)
TTJ,,JUNC
JUNCTION
TEMPERATURE(℃)
ID, DRAIN
CURRENT
I D,DRAIN
CURRENT( AA)
)
DS(ON)
100
D
DS
RDS(ON), NORMALIZED
DRAINR ,NORMALIZED
SOURCE
DRAINON-RESISTANCE
- SOURCE ON - RESISTANCE
80
ID, DRAIN
CURRENT(A)
I ,DRAIN
CURRENT( A )
VDS, DRAIN-SOURCE VOLTAGE(V)
0.6
60
40
20
VGS=0V
1
3
4
2
1
VGS,GATETOSOURCEVOLTAGE
VGS, GATE TO SOURCE VOLTAGE(V)
MEN09N03BJ3
5
25°C
0.1
-55°C
0.01
0.001
0.0001
0
TA = 125°C
10
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY
DIODE
VOLTAGE(V)
VSD ,BODY
DIODEFORWARD
FORWARD VOLTAG
E( V )
CYStek Product Specification
1.4
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 4/7
CYStech Electronics Corp.
Characteristic Curves(Cont.)
GATE CHARGE CHARACTERISTICS
CAPACITANCE CHARACTERISTICS
CA PA CI T A N CE CH A RA CT ERIST ICS
G A T E C H A R G E C H A R A C T E R IS T IC S
ID = 2 5 A
10
4
10
3
V
8
DS
C-CAPACITANCE (pF)
10
=5V
CAPACITANCE (pF)
VGS ,GATE-SOURCE VOLTAGE
(V)
VGS, GATE-SOURCE
VOLTAGE(V)
12
10V
15V
6
4
Ci ss
Co ss
10
Cr ss
2
2
f = 1 M Hz
V G S= 0 V
0
0
Q
g
100
15
20
25
30
SINGLE
PULSE
MAXIMUM
POWER
DISSIPATION
SINGLEPULS
EMAXIMUM
POWERDIS
SIPATION
100
μ
s
Rds(o
10
3000
10μ
s
t
imi
n) L
5
V D S - D RA IN - t o - SO U RCE V LT A G E ( V )
MAXIMUM
SAFEOPE
RATING
AREA
MAXIMUM
SAFE
OPERATING
AREA
300
200
SINGLEPULSE
RθJC= 2.5°C/W
TC = 25°C
2500
1ms
50
10
POWER(W)
POWER( W )
10m
s
100m
DC s
20
5
D
ID, DRAINI CURRENT(A)
,DRAIN CURRENT( A )
0
30
10
20
,G A T E C H A R G E (n C )
2
VGS=10V
SINGLE
VGS = 10VPULSE
SING
LEPULSE
=25℃/W
RθJC
RθJC= 2.5°C/W
TCT=25℃
c = 25°C
1
2000
1500
1000
500
0.5
0
0.5 1
2
3
5
30
20
10
50
0.01
0.1
10
1
SINGLEPULSETIME(SEC)
100
1000
SINGLE PULSE TIME(SEC)
VDS ,DRAIN- SOURCEVOLTAGE
VDS, DRAIN- SOURCE VOLTAGE(V)
TRANSIENT
THERMAL
RESISTANCE
Transi
ent Therma
l Response
Curve
Transient Thermal Resistance
r(t), Normalized Effective Transient
Thermal
Resistance d Effective
r(t),Normalize
1
0.5
Duty Cycle = 0.5
0.3
0.2
0.2
0.1 0.1
0.05
Notes:
0.05
DM
0.03
0.02
0.02
0.01
0.01
-2
10
t1
1.Duty Cycle,D = t2
2.R =2.5°C/W
θJC
3.TJ - TC = P* R (t)
Single Pulse
θJC
4.R (t)=r(t) * R
θJC
-1
10
1
10
θJC
100
1000
t1, Time(sec)
t 1 ,Time (sec)
MEN09N03BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MEN09N03BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MEN09N03BJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C430J3
Issued Date : 2008.10.20
Revised Date :2009.02.04
Page No. : 7/7
TO-252 Dimension
C
A
D
B
Device Name
Date code
G
F
L
Marking:
09N03
□□□□
3
H
E
K
2
I
Style: Pin 1.Gate 2.Drain 3.Source
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Min.
Max.
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
0.45
0.55
1.65
1.95
0.90
1.50
0.45
0.60
6.20
6.80
5.40
5.80
DIM
G
H
I
J
K
L
Inches
Min.
Max.
0.0866 0.1102
*0.0906
0.0449
0.0346
0.2047 0.2165
0.0551 0.0630
Millimeters
Min.
Max.
2.20
2.80
*2.30
1.14
0.88
5.20
5.50
1.40
1.60
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; tin plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MEN09N03BJ3
CYStek Product Specification
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