ON MC1413 High voltage, high current darlington transistor array Datasheet

MC1413, MC1413B,
NCV1413B
High Voltage, High Current
Darlington Transistor Arrays
The seven NPN Darlington connected transistors in these arrays are
well suited for driving lamps, relays, or printer hammers in a variety of
industrial and consumer applications. Their high breakdown voltage
and internal suppression diodes insure freedom from problems
associated with inductive loads. Peak inrush currents to 500 mA
permit them to drive incandescent lamps.
The MC1413, B with a 2.7 kW series input resistor is well suited for
systems utilizing a 5.0 V TTL or CMOS Logic.
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PDIP−16
P SUFFIX
CASE 648
16
1
SOIC−16
D SUFFIX
CASE 751B
Features
• Pb−Free Packages are Available*
• NCV Prefix for Automotive and Other Applications Requiring Site
16
1
and Control Changes
ORDERING INFORMATION
1/7 MC1413, B
2.7 k
Device
Pin 9
5.0 k
3.0 k
Figure 1. Representative Schematic Diagram
16
1
Package
Shipping†
MC1413D
SOIC−16
48 Units/Rail
MC1413DG
SOIC−16
(Pb−Free)
48 Units/Tube
MC1413DR2
SOIC−16
2500 Tape & Reel
MC1413DR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
MC1413P
PDIP−16
25 Units/Rail
MC1413PG
PDIP−16
(Pb−Free)
25 Units/Rail
MC1413BD
SOIC−16
48 Units/Rail
MC1413BDG
SOIC−16
(Pb−Free)
48 Units/Rail
2
15
MC1413BDR2
SOIC−16
2500 Tape & Reel
3
14
MC1413BDR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
4
13
MC1413BP
PDIP−16
25 Units/Rail
MC1413BPG
12
PDIP−16
(Pb−Free)
25 Units/Rail
5
6
11
NCV1413BDR2
SOIC−16
2500 Tape & Reel
NCV1413BDR2G
SOIC−16
(Pb−Free)
2500 Tape & Reel
10
7
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
9
8
(Top View)
DEVICE MARKING INFORMATION
Figure 2. PIN CONNECTIONS
See general marking information in the device marking
section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 8
1
Publication Order Number:
MC1413/D
MC1413, MC1413B, NCV1413B
MAXIMUM RATINGS (TA = 25°C, and rating apply to any one device in the package, unless otherwise noted.)
Symbol
Value
Unit
Output Voltage
VO
50
V
Input Voltage
VI
30
V
Collector Current − Continuous
IC
500
mA
Base Current − Continuous
IB
25
mA
Operating Ambient Temperature Range
MC1413
MC1413B
NCV1413B
TA
Storage Temperature Range
Tstg
−55 to +150
°C
Junction Temperature
TJ
150
°C
Rating
°C
−20 to +85
−40 to +85
−40 to +125
Thermal Resistance, Junction−to−Ambient
Case 648, P Suffix
Case 751B, D Suffix
RqJA
Thermal Resistance, Junction−to−Case
Case 648, P Suffix
Case 751B, D Suffix
RqJC
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
ESD
°C/W
67
100
°C/W
22
20
V
2000
400
1500
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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2
MC1413, MC1413B, NCV1413B
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Symbol
Min
Typ
Max
−
−
−
−
100
50
−
−
−
1.1
0.95
0.85
1.6
1.3
1.1
−
0.93
1.35
−
−
−
−
−
−
2.4
2.7
3.0
II(off)
50
100
−
mA
hFE
1000
−
−
−
Input Capacitance
CI
−
15
30
pF
Turn−On Delay Time
(50% EI to 50% EO)
ton
−
0.25
1.0
ms
Turn−Off Delay Time
(50% EI to 50% EO)
toff
−
0.25
1.0
ms
IR
−
−
−
−
50
100
mA
VF
−
1.5
2.0
V
Characteristic
Output Leakage Current
(VO = 50 V, TA = +85°C)
(VO = 50 V, TA = +25°C)
All Types
All Types
Collector−Emitter Saturation Voltage
(IC = 350 mA, IB = 500 mA)
(IC = 200 mA, IB = 350 mA)
(IC = 100 mA, IB = 250 mA)
All Types
All Types
All Types
VCE(sat)
Input Current − On Condition
(VI = 3.85 V)
MC1413, B
Input Voltage − On Condition
(VCE = 2.0 V, IC = 200 mA)
(VCE = 2.0 V, IC = 250 mA)
(VCE = 2.0 V, IC = 300 mA)
MC1413, B
MC1413, B
MC1413, B
All Types
TA = +25°C
TA = +85°C
Clamp Diode Forward Voltage
(IF = 350 mA)
NOTE:
mA
VI(on)
DC Current Gain
(VCE = 2.0 V, IC = 350 mA)
Clamp Diode Leakage Current
(VR = 50 V)
V
II(on)
Input Current − Off Condition
(IC = 500 mA, TA = 85°C)
Unit
mA
ICEX
V
NCV1413B Tlow = −40°C, Thigh = +125°C. Guaranteed by design. NCV prefix is for automotive and other applications requiring
site and change control.
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3
MC1413, MC1413B, NCV1413B
TYPICAL PERFORMANCE CURVES − TA = 25°C
400
I O , OUTPUT CURRENT (mA)
300
MC1413, B
200
100
0
0
1.0
2.0
3.0
4.0
5.0
8.0
9.0
10
11
All Types
200
100
0
12
0
50
100
150
200
250
300
350
VI, INPUT VOLTAGE (V)
II, INPUT CURRENT (mA)
Figure 3. Output Current versus Input Voltage
Figure 4. Output Current versus Input Current
800
400
2.5
700
600
I I, INPUT CURRENT (mA)
PIN 13
PIN 10
1 Output Conducting at a Time
500
PIN 16
400
300
200
2.0
Maximum
1.5
Typical
1.0
0.5
All Types
100
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.0
0
2.0
3.0
4.0
5.0
6.0
7.0
VCE(sat), SATURATION VOLTAGE (V)
VI, INPUT VOLTAGE (V)
Figure 5. Typical Output Characteristics
Figure 6. Input Characteristics − MC1413, B
1000
I C, COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
300
1
700
2
500
3
300
4
5
200
6
7
100
10
20
30
50
70
% DUTY CYCLE
Figure 7. Maximum Collector Current
versus Duty Cycle
(and Number of Drivers in Use)
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4
100
NUMBER OF DRIVERS USED
I O , OUTPUT CURRENT (mA)
400
8.0
MC1413, MC1413B, NCV1413B
MARKING DIAGRAMS
PDIP−16
P SUFFIX
CASE 648
16
16
MC1413P
ULN2003A
AWLYYWWG
MC1413BP
ULQ2003A
AWLYYWWG
1
1
SOIC−16
D SUFFIX
CASE 751B
16
16
MC1413DG
AWLYWW
1
16
MC1413BDG
AWLYWW
1
A
WL
YY, Y
WW
G
NCV1413BDG
AWLYWW
1
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
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5
MC1413, MC1413B, NCV1413B
PACKAGE DIMENSIONS
PDIP−16
P SUFFIX
CASE 648−08
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS
WHEN FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE
MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
−A−
16
9
1
8
B
F
C
L
S
−T−
SEATING
PLANE
K
H
G
D
M
J
16 PL
0.25 (0.010)
M
T A
M
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6
DIM
A
B
C
D
F
G
H
J
K
L
M
S
INCHES
MIN
MAX
0.740 0.770
0.250 0.270
0.145 0.175
0.015 0.021
0.040
0.70
0.100 BSC
0.050 BSC
0.008 0.015
0.110 0.130
0.295 0.305
0_
10 _
0.020 0.040
MILLIMETERS
MIN
MAX
18.80 19.55
6.35
6.85
3.69
4.44
0.39
0.53
1.02
1.77
2.54 BSC
1.27 BSC
0.21
0.38
2.80
3.30
7.50
7.74
0_
10 _
0.51
1.01
MC1413, MC1413B, NCV1413B
PACKAGE DIMENSIONS
SOIC−16
D SUFFIX
CASE 751B−05
ISSUE J
−A−
16
9
1
8
−B−
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
8 PL
0.25 (0.010)
M
B
S
G
R
K
F
X 45 _
C
−T−
SEATING
PLANE
J
M
D
16 PL
0.25 (0.010)
M
T B
S
A
S
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7
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
9.80
10.00
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.386
0.393
0.150
0.157
0.054
0.068
0.014
0.019
0.016
0.049
0.050 BSC
0.008
0.009
0.004
0.009
0_
7_
0.229
0.244
0.010
0.019
MC1413, MC1413B, NCV1413B
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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