Renesas NE5550779A-T1-A Silicon power ldmos fet Datasheet

Data Sheet
NE5550779A
R09DS0040EJ0300
Rev.3.00
Mar 12, 2013
Silicon Power LDMOS FET
FEATURES
•
•
•
•
•
High Output Power
: Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
High Linear gain
: GL = 22.0 dB TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 10 dBm)
High ESD tolerance
Suitable for VHF to UHF-BAND Class-AB power amplifier.
APPLICATIONS
• 150 MHz Band Radio System
• 460 MHz Band Radio System
• 900 MHz Band Radio System
ORDERING INFORMATION
Part Number
NE5550779A
Order Number
NE5550779A-A
NE5550779A-T1
NE5550779A-T1-A
Package
79A
(Pb-Free)
Marking
W8
Supplying Form
• 12 mm wide embossed taping
• Gate pin faces the perforation side of the tape
•
•
•
•
•
•
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 1 kpcs/reel
NE5550779A-T1A NE5550779A-T1A-A
12 mm wide embossed taping
Gate pin faces the perforation side of the tape
Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5550779A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
VGS
IDS
Drain Current
(50% Duty Pulsed)
Total Power Dissipation Note
Channel Temperature
Storage Temperature
Note:
IDS-pulse
Ratings
30
6.0
2.1
4.2
Unit
V
V
A
A
Ptot
Tch
Tstg
17.8
150
−55 to +150
W
°C
°C
Value at TC = 25°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 1 of 15
NE5550779A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Input Power
Symbol
VDS
VGS
IDS
Pin
Test Conditions
f = 460 MHz, VDS = 7.5 V
MIN.
–
1.65
–
–
TYP.
7.5
2.20
1.4
25
MAX.
9.0
2.85
–
30
Unit
V
V
A
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
Thermal Resistance
RF Characteristics
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Load VSWR Tolerance
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Output Power
Drain Current
Power Drain Efficiency
Power Added Efficiency
Linear Gain
Notes: 1.
2.
3.
4.
Symbol
IGSS
IDSS
Vth
BVDSS
Gm
Rth
Pout
IDS
ηd
ηadd
Test Conditions
MIN.
TYP.
MAX.
Unit
−
−
−
−
100
10
μA
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
VDS = 7.5 V, IDS = 490±70 mA
Channel to Case
1.15
25
1.26
−
1.65
38
1.54
7.0
2.25
−
2.03
−
V
V
S
°C/W
f = 460 MHz, VDS = 7.5 V,
Pin = 25 dBm,
IDset = 140 mA (RF OFF)
37.0
−
−
−
−
38.5
1.38
68
66
22.0
−
−
−
−
−
dBm
A
%
%
dB
−
−
−
−
−
−
−
−
−
−
dBm
A
%
%
dB
dBm
A
%
%
dB
VGS = 6.0 V
VDS = 25 V
GL Note 1
Note 2
Pout
IDS
ηd
ηadd
GL Note 3
Pout
IDS
ηd
ηadd
GL Note 4
f = 460 MHz, VDS = 9.0 V,
Pin = 25 dBm,
IDset = 140 mA (RF OFF)
Load VSWR=20:1(All Phase)
f = 157 MHz, VDS = 7.5 V,
Pin = 23 dBm,
IDset = 140 mA (RF OFF)
f = 900 MHz, VDS = 7.5 V,
Pin = 27 dBm,
IDset = 140 mA (RF OFF)
nA
No Destroy
−
−
−
−
−
−
−
−
−
−
38.5
1.36
69
67
24.0
37.4
1.26
58
53
17.0
Pin = 10 dBm
These characteristics values are measurement using measurement tools especially by RENESAS.
Pin = 5 dBm
Pin = 10 dBm
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
A wafer rejection criterion for standard devices is 1 reject for several samples.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 2 of 15
NE5550779A
TEST CIRCUIT SCHEMATIC FOR 460 MHz
VGS
VDS
R1
C1
L1
C1
IN
OUT
50 Ω
C10
L2
C11
C12
C13
C22
NE5550779A
50 Ω
C20
L3
C21
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
<R>
Symbol
C1
C10
C11
Value
1 μF
27 pF
2.7 pF
Type
GRM188B31C105KA92
GRM1882C1H270JA01
ATC100A2R7JW
C12
12 pF
ATC100A120BW
American Technical
Ceramics
C13
12 pF
ATC100A120BW
American Technical
Ceramics
C20
24 pF
ATC100A240JW
American Technical
Ceramics
C21
6.8 pF
ATC100A6R8BW
American Technical
Ceramics
C22
100 pF
ATC100A101JW
R1
2 kΩ
American Technical
Ceramics
KOA
L1
L2
L3
PCB
SMA Connecter
114 nH
4.7 nH
3.0 nH
−
−
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
1/10 W Chip Resistor
RK73B1JTTD202J
φ 0.5 mm, φ D = 3 mm, 10 Turns
LQW18AN4R7NG00
LQP15MN3N0B02
R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
Maker
Murata
Murata
American Technical
Ceramics
Ohesangyou
Murata
Murata
Panasonic
WAKA
Page 3 of 15
NE5550779A
COMPONENT LAYOUT OF TEST CIRCUIT FOR 460 MHz
VDS
VGS
C1
L1
C11
RF IN
C12
C12 R1
C13
C13
L2
C10
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
C1
C20
C21
L3
RF OUT
C22
Page 4 of 15
NE5550779A
TYPICAL CHARACTERISTICS 1 (TA = 25°C)
R:
f = 460MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 140 mA, Pin = 0 to 30 dBm
IM:
f1 = 460MHz, f2 = 461 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 140mA, Pout (2 tone) = 12 to 37 dBm
45
40
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
40
3.0
Pout - 3.6 V
Pout - 4.5 V
Pout - 6 V
Pout - 7.5 V
Pout - 9 V
2.7
35
2.4
30
2.1
25
1.8
35
10
IDS - 3.6 V
IDS - 4.5 V
IDS - 6 V
IDS - 7.5 V
IDS - 9 V
1.2
0.6
0
0.3
–10
10
15
20
25
30
0.0
35
50
40
15
30
10
20
5
10
0
5
10
15
20
25
30
35
Input Power Pin (dBm)
Input Power Pin (dBm)
2f0 vs. OUTPUT POWER
IM3/IM5 vs. 2 TONES OUTPUT POWER
0
2f0 - 3.6 V
2f0 - 4.5 V
2f0 - 6 V
2f0 - 7.5 V
2f0 - 9 V
–20
–30
–40
–50
–60
–70
15
60
20
0
–5
3rd/5th Order Intermodulation Distortion IM3/IM5 (dBc)
0
5
25
70
0.9
5
0
Power Gain GP (dB)
15
–5
–5
2nd Harmonics 2f0 (dBc)
1.5
20
Drain Current IDS (A)
Output Power Pout (dBm)
30
80
Gp - 3.6 V
Gp - 4.5 V
Gp - 6 V
Gp - 7.5 V
Gp - 9 V
η add - 3.6 V
η add - 4.5 V
η add - 6 V
η add - 7.5 V
η add - 9 V
20
25
30
35
40
45
Output Power Pout (dBm)
–10
–20
Power Added Efficiency ηadd (%)
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
0
IM3 - 3.6 V
IM3 - 4.5 V
IM3 - 7.5 V
IM3 - 9 V
IM5 - 3.6 V
IM5 - 4.5 V
IM5 - 7.5 V
IM5 - 9 V
IM3 - 6 V
IM5 - 6 V
–30
–40
–50
–60
–70
10
15
20
25
30
35
40
2 Tones Output Power Pout (2 tone) (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 5 of 15
NE5550779A
TEST CIRCUIT SCHEMATIC FOR 157 MHz
VGS
VDS
R1
C1
L1
C1
IN
50 Ω
OUT
C10
L10
C11
C12
C23 50 Ω
L20
NE5550779A
C20
C21
C22
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
<R>
Symbol
C1
C10
C11
C12
C20
C21
C22
C23
R1
Value
1 μF
100 pF
5.6 pF
39 pF
22 pF
68 pF
15 pF
100 pF
5.1 kΩ
L1
L10
L20
PCB
SMA Connecter
74.7 nH
27 nH
29.8 nH
−
−
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Type
GRM31MB11E105KA01
GQM1882C1H101JB01
GQM1882C2A5R6DB01
GQM1882C1H390JB01
GRM1882C1H220JA01
GQM1882C1H680JB01
GQM1882C1H150JA01
GQM1882C1H101JB01
1/10 W Chip Resistor
MCR03J103
φ 0.4 mm, φ D = 2 mm, 10 Turns
LLQ2012-F27N
φ 0.4 mm, φ D = 2 mm, 5 Turns
R1766, t = 0.4 mm, εr = 4.5, size = 30 × 48 mm
WAKA 01K0790-20
Maker
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
ROAM
Ohesangyou
Toko
Ohesangyou
Panasonic
WAKA
Page 6 of 15
NE5550779A
COMPONENT LAYOUT OF TEST CIRCUIT FOR 157 MHz
C1
C1
L1
L10
IN
C10
C11
C11
R1
C 20
C 21
L20
C23
OUT
C22
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 7 of 15
NE5550779A
TYPICAL CHARACTERISTICS 2 (TA = 25°C)
f = 157 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –10 to 20 dBm
POWER GAIN, POWER ADDED
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
vs. INPUT POWER
Output Power Pout (dBm)
35
35
2.5
30
2.0
25
1.5
20
80
GP - 3.6 V
GP - 4.5 V
GP - 6 V
GP - 7.5 V
GP - 9 V
η add - 3.6 V
η add - 4.5 V
η add - 6 V
η add - 7.5 V
η add - 9 V
70
60
30
50
25
40
20
30
15
20
10
10
1.0
15
10
–5
40
3.0
Power Gain GP (dB)
40
45
3.5
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
IDS - 3.6 V
IDS - 4.5 V
IDS - 6 V
IDS - 7.5 V
IDS - 9 V
Drain Current IDS (A)
45
0.5
0
5
10
15
20
25
0.0
30
Input Power Pin (dBm)
5
–5
0
5
10
15
20
25
Power Added Efficiency η add (%)
RF:
0
30
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 8 of 15
NE5550779A
TEST CIRCUIT SCHEMATIC FOR 900 MHz
VGS
VDS
R1
C1
L1
C2
IN
50 Ω
OUT
C10
C24
C11
C12
C13
FET
NE5550779A
C20
C21
50 Ω
C23
C22
COMPONENTS OF TEST CIRCUIT FOR MEASURING ELECTRICAL CHARACTERISTICS
<R>
Symbol
C10
C11
C12
C13
C20
C21
C22
C23
C24
C1
C2
L1
R1
PCB
SMA Connecter
Value
27 pF
6.8 pF
15 pF
18 pF
8.2 pF
3.9 pF
1.5 pF
8.2 pF
100 pF
1 μF
1 μF
74.7 nH
20 kΩ
−
−
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Type
GQM1882C1H270JB01
GQM1882C2A6R8DB01
GQM1882C1H150JB01
GQM1882C1H180JB01
GQM1882C1H8R2DB01
GQM1883C2A3R9CB01
GQM1884C2A1R5CB01
GQM1882C1H8R2DB01
GQM1882C1H101JB01
GRM21BB31H105KA2L
GRM21BB31H105KA2L
D20-74N7
MCR03J203
R1766, t = 0.8 mm, εr = 4.8, size = 30 × 40 mm
WAKA 01K0790-20
Maker
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Murata
Ohesangyou
Rohm
Panasonic
WAKA
Page 9 of 15
NE5550779A
COMPONENT LAYOUT OF TEST CIRCUIT FOR 900 MHz
VDS
VGS
C1
C2
VGS
RF IN
VDS
C1
RF IN
C10
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
C1
0
R1
C2
RF OUT
L1
L1
C23
C23
C24
C
11
C
20
C
21
C
12
C
22
C11 C12C13
C13 C20 C21C22
R1
C24
Page 10 of 15
NE5550779A
TYPICAL CHARACTERISTICS 3 (TA = 25°C)
RF: f = 900 MHz, VDS = 3.6/4.5/6/7.5/9 V, IDset = 40 mA, Pin = –5 to 30 dBm
POWER GAIN, DRAIN CURRENT
vs. INPUT POWER
40
50
20
40
15
30
10
20
5
10
0
–10
–5
0
5
(%)
60
10
15
20
25
30
35
0
Input Power Pin (dBm)
Power Gain GP (dB)
25
25
add
Output Power Pout (dBm)
30
70
Power Added Efficiency η
35
30
80
Pout - 3.6 V
Pout - 4.5 V
Pout - 6.0 V
Pout - 7.5 V
Pout - 9 V
η add - 3.6 V
η add - 4.5 V
η add - 6.0 V
η add - 7.5 V
η add - 9 V
20
1.8
GP - 3.6 V
GP - 4.5 V
GP - 6 V
GP - 7.5 V
GP - 9 V
IDS - 3.6 V
IDS - 4.5 V
IDS - 6.0 V
IDS - 7.5 V
IDS - 9 V
1.5
1.2
15
0.9
10
0.6
5
0.3
0
–10
–5
0
5
10
15
20
25
30
35
Drain Current IDS (A)
OUTPUT POWER, POWER ADDED
EFFICIENCY vs. INPUT POWER
0
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 11 of 15
NE5550779A
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products] → [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 12 of 15
NE5550779A
MOUNTING LAYOUT PAD DIMENSIONS
79A (UNIT: mm)
4.0
1.7
Source
Stop up the hole with a rosin or
something to avoid solder flow.
Drain
1.2
0.5
1.0
5.9
Gate
Through Hole: φ 0.2 × 33
0.5 0.5
6.1
Remark The mounting pad layout in this document is for reference only.
When designing PCB, please consider workability of mounting, solder joint reliability, prevention of solder
bridge and so on, in order to optimize the design.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 13 of 15
NE5550779A
PACKAGE DIMENSIONS
79A (UNIT: mm)
0.4±0.15
1.2 MAX.
Drain
3.6±0.2
0.2±0.1
0.9±0.2
Gate
0.8 MAX.
5.7 MAX.
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
1.0 MAX.
0.8±0.15
Drain
4.4 MAX.
Source
27001
Source
8
1.5±0.2
W
Gate
0.6±0.15
5.7 MAX.
(Bottom View)
4.2 MAX.
Page 14 of 15
NE5550779A
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220°C or higher
Preheating time at 120 to 180°C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
: 260°C or below
: 10 seconds or less
: 60 seconds or less
: 120±30 seconds
: 3 times
: 0.2% (Wt.) or below
Condition Symbol
IR260
Wave Soldering
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Preheating temperature (package surface temperature)
: 120°C or below
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
WS260
Partial Heating
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0040EJ0300 Rev.3.00
Mar 12, 2013
Page 15 of 15
Revision History
Rev.
1.00
2.00
3.00
Date
Apr 26, 2012
Jul 04, 2012
Mar 12, 2013
NE5550779A Data Sheet
Description
Summary
Page
−
p.2
First edition issued
Modification of ELECTRICAL CHARACTERISTICS
p.6
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
P3
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
P6
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
P9
Modification of COMPONENTS OF TEST CIRCUIT FOR MEASURING
ELECTRICAL CHARACTERISTICS
All trademarks and registered trademarks are the property of their respective owners.
C-1
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9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
California Eastern Laboratories, Inc.
4590 Patrick Henry Drive, Santa Clara, California 95054, U.S.A.
Tel: +1-408-919-2500, Fax: +1-408-988-0279
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2013 Renesas Electronics Corporation. All rights reserved.
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