NTE NTE2530 Silicon complementary transistors high voltage driver Datasheet

NTE2530 (NPN) & NTE2531 (PNP)
Silicon Complementary Transistors
High Voltage Driver
Features:
D High Current Capacity: IC = 2A
D High Breakdown Voltage: VCEO = 400V Min
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 300V, IE = 0
–
–
1.0
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
1.0
µA
DC Current Gain
hFE
VCE = 10V, IC = 100mA
40
–
200
VCE = 10V, IC = 100mA
–
60
–
MHz
–
40
–
MHz
Gain–Bandwidth Product
NTE2530
fT
NTE2531
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 500mA, IB = 50mA
–
–
1.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 500mA, IB = 50mA
–
–
1.0
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
400
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
400
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
5
–
–
V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Output Capacitance
NTE2530
Test Conditions
Cob
VCB = 30V, f = 1MHz
NTE2531
Turn–On Time
NTE2530
ton
VCC = 150V, VBE = –5V,
10IB1 = –10IB2 = IC = 500mA,
RL = 300Ω, RB = 20Ω,
at IC = 500mA,
Pulse Width = 20µs,
Duty Cycle ≤ 1%, Note 1
NTE2531
Storage Time
NTE2530
tstg
NTE2531
Fall Time
NTE2530
tf
NTE2531
Min
Typ
–
15
–
pF
–
25
–
pF
–
0.085
–
µs
–
0.12
–
µs
–
4.0
–
µs
–
3.0
–
µs
–
0.6
–
µs
–
0.3
–
µs
Note 1. For NTE2531, the polarity is reversed.
.256 (6.5)
.090 (2.3)
.002 (0.5)
.197 (5.0)
.059 (1.5)
.275
(7.0)
B
C
E
.295
(7.5)
.002(0.5)
.090 (2.3)
Max Unit
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