IRF IRFHS8242TR2PBF Hexfet power mosfet Datasheet

PD - 96337A
IRFHS8242PbF
HEXFET® Power MOSFET
VDS
25
V
VGS max
±20
V
RDS(on) max
13.0
mΩ
(@VGS = 10V)
Qg (typical)
( @ VGS = 4.5V)
ID
(@Tc(Bottom) = 25°C)
TOP VIEW
D 2
4.3
8.5
nC
d
D
6 D
D 1
D
S
G 3
D
D
5 D
D
4 S
D
G
S
S
2mm x 2mm PQFN
A
Applications
• System/Load Switch
Features and Benefits
Features
Low RDSon (≤ 13.0mΩ)
Low Thermal Resistance to PCB (≤ 13°C/W)
Low Profile (≤ 1.0 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Orderable part number
Package Type
IRFHS8242TRPBF
IRFHS8242TR2PBF
PQFN 2mm x 2mm
PQFN 2mm x 2mm
Resulting Benefits
Lower Conduction Losses
Enable better thermal dissipation
results in Increased Power Density
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
Parameter
Max.
VDS
Drain-to-Source Voltage
VGS
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
±20
9.9
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V
8.0
21
ID @ TC(Bottom)= 70°C
Continuous Drain Current, VGS @ 10V
ID @ TC(Bottom) = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
IDM
c
PD @TA = 70°C
f
Power Dissipation f
TJ
Linear Derating Factor
Operating Junction and
TSTG
Storage Temperature Range
PD @TA = 25°C
Power Dissipation
25
V
d
d
d
8.5d
17
A
84
2.1
f
Units
1.3
0.02
-55 to + 150
W
W/°C
°C
Notes  through † are on page 2
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1
11/30/10
IRFHS8242PbF
Static @ TJ = 25°C (unless otherwise specified)
Min.
Typ.
BVDSS
∆ΒVDSS/∆TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Parameter
25
–––
–––
18
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
10.0
17.0
13.0
21.0
VGS(th)
∆VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
1.35
–––
1.8
-6.8
2.35
–––
IDSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
1.0
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
gfs
Qg
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
–––
19
–––
–––
-100
–––
4.3
10.4
–––
–––
nC
Qg
Qgs
–––
–––
VGS = 4.5V, VDS = 13V, ID = 8.5A
VDS = 13V
Gate-to-Source Charge
–––
–––
1.8
1.6
–––
–––
nC
VGS = 10V
ID = 8.5A (See Fig. 6 & 16)
Ω
h
Total Gate Charge h
h
h
Max. Units
Qgd
Gate-to-Drain Charge
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
–––
–––
1.9
6.5
–––
–––
Rise Time
Turn-Off Delay Time
–––
–––
19
5.4
–––
–––
Fall Time
Input Capacitance
–––
–––
5.3
653
–––
–––
Output Capacitance
–––
171
–––
Reverse Transfer Capacitance
–––
78
–––
Min.
Typ.
td(off)
tf
Ciss
Coss
Crss
Conditions
V
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mΩ
VGS = 10V, ID = 8.5A
VGS = 4.5V, ID = 6.8A
V
VDS = VGS, ID = 25µA
mV/°C
µA
nA
S
ed
e
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 10V, ID = 8.5A
d
d
d
e
VDD = 13V, VGS = 4.5V
ns
= 8.5Ad
ID
RG=1.8Ω
See Fig.17
VGS = 0V
pF
VDS = 10V
ƒ = 1.0MHz
Diode Characteristics
Parameter
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
c
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Max. Units
8.5
d
Conditions
MOSFET symbol
–––
–––
–––
–––
84
–––
–––
1.0
V
–––
–––
11
11
17
17
ns
nC
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 8.5A , VGS = 0V
TJ = 25°C, IF = 8.5A , VDD = 13V
di/dt = 280 A/µs
d
d
e
e
S
Time is dominated by parasitic Inductance
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (<10s)
g
g
f
f
Typ.
–––
–––
–––
–––
Max.
13
90
60
42
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Current limited by package.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board
Rθ is measured at TJ of approximately 90°C.
For DESIGN AID ONLY, not subject to production testing.
2
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IRFHS8242PbF
100
100
10
BOTTOM
1
2.7V
0.1
≤60µs PULSE WIDTH
10
BOTTOM
2.7V
1
≤60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
0.01
0.1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
100
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
T J = 150°C
T J = 25°C
10
VDS = 15V
≤60µs PULSE WIDTH
1.0
ID = 8.5A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20 0
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
10000
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 8.5A
C oss = C ds + C gd
1000
Ciss
Coss
100
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
2.7V
Crss
12.0
VDS= 20V
VDS= 13V
10.0
VDS= 5.0V
8.0
6.0
4.0
2.0
0.0
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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0
2
4
6
8
10
12
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFHS8242PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
TJ = 150°C
TJ = 25°C
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
10
Limited by
Wire Bond
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
DC
0.1
1.0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
25
VGS(th) , Gate threshold Voltage (V)
2.4
Limited By Package
20
ID, Drain Current (A)
10msec
1
15
10
5
0
2.2
2.0
ID = 25µA
1.8
1.6
1.4
1.2
1.0
25
50
75
100
125
150
-75 -50 -25
T C , Case Temperature (°C)
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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35
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on) , Drain-to -Source On Resistance (mΩ)
IRFHS8242PbF
ID = 8.5A
30
25
20
T J = 125°C
15
10
T J = 25°C
5
0
0
5
10
15
30
25
Vgs = 4.5V
20
15
Vgs = 10V
10
5
20
0
20
40
60
80
100
ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
600
Single Pulse Power (W)
500
400
300
200
100
0
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Time (sec)
Fig 14. Typical Power vs. Time
D.U.T
Driver Gate Drive
ƒ
+
‚
-
P.W.
+
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
V DD
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
„
-
D=
Period
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
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5
IRFHS8242PbF
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
S
Qgs1 Qgs2
VGS
RG
RD
VDS
90%
D.U.T.
+
-V DD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 17a. Switching Time Test Circuit
6
Qgodr
Fig 16b. Gate Charge Waveform
Fig 16a. Gate Charge Test Circuit
VDS
Qgd
10%
VGS
td(on)
tr
td(off)
tf
Fig 17b. Switching Time Waveforms
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IRFHS8242PbF
PQFN 2x2 Outline Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 2x2 Outline Part Marking
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFHS8242PbF
PQFN 2x2 Outline Tape and Reel
8
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IRFHS8242PbF
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
†
††
†††
Cons umer
(per JE DE C JE S D47F
PQFN 2mm x 2mm
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/2010
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