LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC4081QT1G Series FEATURE ƽLow Cob,Cob=2pF(Typ.). ƽEpitaxial planar type. 3 ƽPNP complement:L2SA1576A ƽWe declare that the material of product compliance with RoHS requirements. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L2SC4081QT1G BQ 3000/Tape&Reel L2SC4081QT3G BQ 10000/Tape&Reel L2SC4081RT1G BR 3000/Tape&Reel L2SC4081RT3G BR 10000/Tape&Reel L2SC4081ST1G BS 3000/Tape&Reel L2SC4081ST3 G BS 10000/Tape&Reel SC-70/SOT– 323 3 COLLECTOR 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 50 V Collector–Base Voltage V CBO 60 V Emitter–Base Voltage V 7.0 V EBO Collector Current — Continuous IC 150 mAdc Collector power dissipation PC 0.15 W Junction temperature Tj 150 °C Storage temperature T stg -55 ~+150 °C Rev.O 1/5 LESHAN RADIO COMPANY, LTD. L2SC4081QT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= – 2mA, f =30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz ) Min Typ Max Unit V (BR)CEO 50 — — V V (BR)EBO 7 — — V V (BR)CBO 60 — — V I CBO — — 0.1 µA I EBO — — 0.1 µA V CE(sat) — — 0.4 V h FE 120 –– 560 –– fT — 180 –– MHz C ob — 2.0 3.5 pF h FE values are classified as follows: * hFE Q R S 120~270 180~390 270~560 Rev.O 2/5 LESHAN RADIO COMPANY, LTD. L2SC4081QT1G Series Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics( ) 50 I C, COLLECTOR CURRENT (mA) 10 1 25°C – 55°C 50 T A = 100° C I C, COLLECTOR CURRENT (mA) 20 2 0.50mA 100 VCE= 6 V 0.5 T A = 25°C 80 60 40 20 0.2 0.1 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4 0 –1.6 0.4 V BE , BASE TO EMITTER VOLTAGE(V) Fig.3 Grounded emitter output characteristics( ) 1.2 1.6 2.0 Fig.4 DC current gain vs. collector current ( ) 10 I C, COLLECTOR CURRENT (mA) 0.8 V CE , COLLECTOR TO EMITTER VOLTAGE (V) 500 h FE, DC CURRENT GAIN 8 6 4 2 200 100 50 20 0 0 4 8 12 16 10 20 0.2 0.5 V CE , COLLECTOR TO EMITTER VOLTAGE (V) 100 50 20 10 0.2 0.5 1 2 5 10 20 50 I C, COLLECTOR CURRENT (mA) 100 200 5 10 20 50 100 200 Fig.6 Collector-emitter saturation voltage vs. collector current V CE(sat), COLLECTOR SATURATION VOLTAGE(V) h FE, DC CURRENT GAIN 200 2 I C, COLLECTOR CURRENT (mA) Fig.5 DC current gain vs. collector current ( ) 500 1 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 I C, COLLECTOR CURRENT (mA) Rev.O 3/5 LESHAN RADIO COMPANY, LTD. L2SC4081QT1G Series Fig.8 Collector-emitter saturation voltage vs. collector current ( ) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) V CE(sat), COLLECTOR SATURATION VOLTAGE(V) Fig.7 Collector-emitter saturation voltage vs. collector current ( ) 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.1 0.05 0.02 0.01 0.2 0.5 I C, COLLECTOR CURRENT (mA) 500 200 100 50 –1 –2 –5 –10 2 5 10 20 50 100 Fig.10 Collector output capacitance vs.collector-base voltage Emitter inputcapacitance vs. emitter-base voltage –20 –50 –100 I E, EMITTER CURRENT (mA) C ob , COLLECTOR OUTPUT CAPACITANCE( pF) C ib , EMITTER INPUT CAPACITANCE (pF) f r , TRANSITION FREQUENCY(MHz) Fig.9 Gain bandwidth product vs. emitter current –0.5 1 I C, COLLECTOR CURRENT (mA) 20 10 5 2 1 0.2 0.5 1 2 5 10 20 V CB, COLLECTOR TO BASE VOLTAGE (V) V EB, EMITTER TO BASE VOLTAGE (V) C c-r bb, BASE COLLECTOR TIME CONSTANT( ps) Fig.11 Base-collector time constant vs.emitter current 200 100 50 20 10 –0.2 –0.5 –1 –2 –5 –10 I E, EMITTER CURRENT (mA) Rev.O 4/5 50 LESHAN RADIO COMPANY, LTD. L2SC4081QT1G Series SC-70 / SOT-323 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 3 E HE 1 2 b e A 0.05 (0.002) c A2 DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 SOLDERING FOOTPRINT* 0.65 0.025 0.016 0.010 0.087 0.053 0.055 0.095 1 XX M 1.9 0.075 = Specific Device Code = Date Code = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. 0.9 0.035 SCALE 10:1 0.079 MAX 0.040 0.004 XXM 0.65 0.025 0.7 0.028 0.012 0.004 0.071 0.045 0.047 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 GENERIC MARKING DIAGRAM L A1 MIN 0.032 0.000 mm inches Rev.O 5/5