Vishay J202 N-channel jfet Datasheet

J/SST201 Series
Vishay Siliconix
N-Channel JFETs
J201
J202
J204
SST201
SST202
SST204
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
J/SST201
−0.3 to −1.5
−40
0.5
0.2
J/SST202
−0.8 to −4
−40
1
0.9
J/SST204
−0.3 to −2
−25
0.5
0.2
FEATURES
D
D
D
D
Low Cutoff Voltage: J201 <1.5 V
High Input Impedance
Very Low Noise
High Gain: AV = 80 @ 20 mA
BENEFITS
APPLICATIONS
D Full Performance from Low Voltage
Power Supply: Down to 1.5 V
D Low Signal Loss/System Error
D High System Sensitivity
D High Quality Low-Level Signal
Amplification
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
For applications information see AN102 and AN106.
TO-226AA
(TO-92)
D
1
S
2
TO-236
(SOT-23)
D
3
S
G
1
G
2
3
Top View
Top View
J201
J202
J204
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
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1
J/SST201 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST201
Parameter
Typa
Symbol
Test Conditions
Min
V(BR)GSS
IG = −1 mA , VDS = 0 V
−40
VGS(off)
VDS = 15 V, ID = 10 nA
−0.3
Max
J/SST202
Min
Max
J/SST204c
Min
Max
Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
IDSS
IGSS
VDS = 15 V, VGS = 0 V
VGS = −20 V, VDS = 0 V
TA = 125_C
0.2
−2
−40
−1.5
−0.8
1
0.9
−100
−25
−4
−0.3
4.5
0.2
−100
−1
IG
VDG = 10 V, ID = 0.1 mA
−2
Drain Cutoff Current
ID(off)
VDS = 15 V, VGS = −5 V
2
Gate-Source Forward Voltage
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
Common-Source
Forward Transconductance
gfs
VDS = 15 V, VGS = 0 V
f = 1 kHz
Common-Source
Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
Equivalent Input Noise Voltage
en
V
−2
3
mA
−100
pA
nA
pA
V
Dynamic
VDS = 15 V, VGS = 0 V
f = 1 MHz
VDS = 10 V, VGS = 0 V
f = 1 kHz
0.5
2
0.5
mS
4.5
pF
1.3
6
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
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1
nV⁄
√Hz
NPA, NH
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
4
6
3
gfs
IDSS
4
2
2
1
0
1500
−1
−2
−3
−4
IG @ ID = 500 mA
ID = 100 mA
1 nA
TA = 125_C
IGSS @ 125_C
100 pA
ID = 500 mA
10 pA
ID = 100 mA
TA = 25_C
1 pA
IGSS @ 25_C
0.1 pA
0
0
−5
0
15
VDG − Drain-Gate Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Common-Source Forward Transconductance
vs. Drain Current
2
10
gos
1200
8
6
900
rDS
600
4
300
2
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
gfs − Forward Transconductance (mS)
VGS(off) = −1.5 V
0
0
0
−1
−2
−3
−4
TA = −55_C
1.2
25_C
0.8
125_C
0.4
0
−5
0.01
0.1
VGS(off) = −0.7 V
1
ID − Drain Current (mA)
Output Characteristics
400
VDS = 10 V
f = 1 kHz
1.6
VGS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
2
VGS(off) = −1.5 V
VGS = 0 V
360
1.6
ID − Drain Current (mA)
ID − Drain Current (mA)
30
VGS(off) − Gate-Source Cutoff Voltage (V)
gos − Output Conductance (mS)
rDS(on) − Drain-Source On-Resistance ( Ω )
10 nA
IG − Gate Leakage (A)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
8
Gate Leakage Current
5
gfs − Forward Transconductance (mS)
IDSS − Saturation Drain Current (mA)
10
−0.1 V
240
−0.2 V
160
−0.3 V
80
1.2
−0.3 V
0.8
−0.6 V
0.4
−0.4 V
−0.5 V
VGS = 0 V
0
−0.9 V
−1.2 V
0
0
4
8
12
VDS − Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
16
20
0
4
8
12
16
20
VDS − Drain-Source Voltage (V)
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J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
500
VGS(off) = −0.7 V
VGS(off) = −1.5 V
VDS = 10 V
ID − Drain Current (mA)
TA = −55_C
300
25_C
200
125_C
100
TA = −55_C
1.2
25_C
0.8
0.4
0
125_C
0
0
−0.1
−0.2
−0.3
−0.4
0
−0.5
−0.4
VGS − Gate-Source Voltage (V)
VDS = 10 V
f = 1 kHz
1.2
TA = −55_C
25_C
0.9
0.6
125_C
0.3
−1.6
−2
VGS(off) = −1.5 V
VDS = 10 V
f = 1 kHz
3.2
2.4
TA = −55_C
25_C
1.6
0.8
125_C
0
0
0
−0.1
−0.2
−0.3
−0.4
0
−0.5
VGS − Gate-Source Voltage (V)
120
RL +
Assume VDD = 15 V, VDS = 5 V
10 V
ID
80
−0.8
−1.2
−1.6
−2
On-Resistance vs. Drain Current
2000
rDS(on) − Drain-Source On-Resistance ( Ω )
160
g fs R L
AV + 1 ) R g
L os
−0.4
VGS − Gate-Source Voltage (V)
Circuit Voltage Gain vs. Drain Current
200
AV − Voltage Gain
−1.2
Transconductance vs. Gate-Source Voltage
4
gfs − Forward Transconductance (mS)
gfs − Forward Transconductance (mS)
VGS(off) = −0.7 V
−0.8
VGS − Gate-Source Voltage (V)
Transconductance vs. Gate-Source Voltage
1.5
VGS(off) = −0.7 V
−1.5 V
40
0
1600
VGS(off) = −0.7 V
1200
800
−1.5 V
400
0
0.01
0.1
ID − Drain Current (mA)
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VDS = 10 V
1.6
400
ID − Drain Current (mA)
Transfer Characteristics
2
1
0.01
0.1
1
ID − Drain Current (mA)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
J/SST201 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
Crss − Reverse Feedback Capacitance (pF)
f = 1 MHz
Ciss − Input Capacitance (pF)
8
6
VDS = 0 V
4
10 V
2
0
f = 1 MHz
4
3
VDS = 0 V
2
1
10 V
0
0
−4
−8
−12
−16
−20
0
−4
VGS − Gate-Source Voltage (V)
Output Conductance vs. Drain Current
3
20
−16
−20
VDS = 10 V
Hz
2.4
1.8
TA = −55_C
0.8
−12
Equivalent Input Noise Voltage vs. Frequency
VDS = 10 V
f = 1 kHz
en − Noise Voltage nV /
gos − Output Conductance (µS)
VGS(off) = −1.5 V
−8
VGS − Gate-Source Voltage (V)
25_C
0.4
16
ID @ 100 mA
12
8
VGS = 0 V
4
125_C
0
0
0.01
0.1
1
10
100
ID − Drain Current (mA)
VGS(off) = −0.7 V
VGS(off) = −1.5 V
VGS = 0 V
0.8
ID − Drain Current (mA)
ID − Drain Current (µA)
100 k
Output Characteristics
1.0
240
−0.1
180
−0.2
120
−0.3
−0.5
60
10 k
f − Frequency (Hz)
Output Characteristics
300
1k
VGS = 0 V
0.6
−0.3
0.4
−0.6
0.2
−0.4
−0.9
−1.2
0
0
0
0.1
0.2
0.3
VDS − Drain-Source Voltage (V)
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
0.4
0.5
0
0.2
0.4
0.6
0.8
1.0
VDS − Drain-Source Voltage (V)
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