AP4228GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D2
D2
▼ Simple Drive Requirement
D1
D1
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
S2
SO-8
S1
BVDSS
30V
RDS(ON)
26mΩ
ID
G2
3
6.8A
G1
D2
D1
Description
AP4228 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
G2
G1
S2
S1
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
.
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
± 20
V
6.8
A
5.5
A
40
A
2
W
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201410203
AP4228GM-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
30
-
-
V
VGS=10V, ID=6A
-
-
26
mΩ
VGS=4.5V, ID=4A
-
-
40
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=6A
-
8.4
13.5
nC
Qgs
Gate-Source Charge
VDS=24V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.7
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
5
-
ns
tr
Rise Time
ID=1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18.5
-
ns
tf
Fall Time
VGS=10V
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
485
770
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
IS=2.1A, VGS=0V
-
-
1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4228GM-HF
40
40
30
ID , Drain Current (A)
ID , Drain Current (A)
T A = 150 C
10V
7.0V
5.0V
4.5V
20
V G =3.0V
30
20
V G =3.0V
10
10
0
0
0
1
2
3
0
4
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
32
1.9
ID=6A
T A =25 ℃
ID=6A
V G =10V
28
26
.
24
Normalized RDS(ON)
30
RDS(ON) (mΩ)
10V
7.0V
5.0V
4.5V
o
o
T A = 25 C
1.4
0.9
22
0.4
20
2
4
6
8
-50
10
50
100
150
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.4
T j =25 o C
T j =150 o C
8
1.2
Normalized VGS(th)
IS(A)
0
o
V GS , Gate-to-Source Voltage (V)
6
4
1.0
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4228GM-HF
12
f=1.0MHz
1000
C iss
10
V DS = 15 V
V DS = 18 V
V DS = 24 V
8
C (pF)
VGS , Gate to Source Voltage (V)
ID=6A
6
100
C oss
C rss
4
2
0
10
0
10
20
30
40
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
100us
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
.
Normalized Thermal Response (Rthja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP4228GM-HF
MARKING INFORMATION
Part Number
4228GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5