TZQ5221B...TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W Type x Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Document Number 85612 Rev. 3, 01-Apr-99 Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V www.vishay.de • FaxBack +1-408-970-5600 1 (6) TZQ5221B...TZQ5267B Vishay Telefunken Type TZQ5221B TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5227B TZQ5228B TZQ5229B TZQ5230B TZQ5231B TZQ5232B TZQ5233B TZQ5234B TZQ5235B TZQ5236B TZQ5237B TZQ5238B TZQ5239B TZQ5240B TZQ5241B TZQ5242B TZQ5243B TZQ5244B TZQ5245B TZQ5246B TZQ5247B TZQ5248B TZQ5249B TZQ5250B TZQ5251B TZQ5252B TZQ5253B TZQ5254B TZQ5255B TZQ5256B TZQ5257B TZQ5258B TZQ5259B TZQ5260B TZQ5261B TZQ5262B TZQ5263B TZQ5264B TZQ5265B TZQ5266B TZQ5267B VZnom 1) V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 IZT for rzjT mA W 20 < 30 20 < 30 20 < 30 20 < 30 20 < 29 20 < 28 20 < 24 20 < 23 20 < 22 20 < 19 20 < 17 20 < 11 20 <7 20 <7 20 <5 20 <6 20 <8 20 <8 20 < 10 20 < 17 20 < 22 20 < 30 9.5 < 13 9.0 < 15 8.5 < 16 7.8 < 17 7.4 < 19 7.0 < 21 6.6 < 23 6.2 < 25 5.6 < 29 5.2 < 33 5.0 < 35 4.6 < 41 4.5 < 44 4.2 < 49 3.8 < 58 3.4 < 70 3.2 < 80 3.0 < 93 2.7 < 105 2.5 < 125 2.2 < 150 2.1 < 170 2.0 < 185 1.8 < 230 1.7 < 270 rzjk at IZK mA < 1200 0.25 < 1250 0.25 < 1300 0.25 < 1400 0.25 < 1600 0.25 < 1600 0.25 < 1700 0.25 < 1900 0.25 < 2000 0.25 < 1900 0.25 < 1600 0.25 < 1600 0.25 < 1600 0.25 < 1000 0.25 < 750 0.25 < 500 0.25 < 500 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 700 0.25 < 700 0.25 < 800 0.25 < 900 0.25 < 1000 0.25 < 1100 0.25 < 1300 0.25 < 1400 0.25 < 1400 0.25 < 1600 0.25 < 1700 0.25 W mA IR at VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 < 100 < 100 < 75 < 75 < 50 < 25 < 15 < 10 <5 <5 <5 <5 <5 <5 <3 <3 <3 <3 <3 <3 <2 <1 < 0.5 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 TKVZ %/K < –0.085 < –0.085 < –0.080 < –0.080 < –0.075 < –0.070 < –0.065 < –0.060 < ±0.055 < ±0.030 < ±0.030 < +0.038 < +0.038 < +0.045 < +0.050 < +0.058 < +0.062 < +0.065 < +0.068 < +0.075 < +0.076 < +0.077 < +0.079 < +0.082 < +0.082 < +0.083 < +0.084 < +0.085 < +0.086 < +0.086 < +0.087 < +0.088 < +0.089 < +0.090 < +0.091 < +0.091 < +0.092 < +0.093 < +0.094 < +0.095 < +0.095 < +0.096 < +0.096 < +0.097 < +0.097 < +0.097 < +0.098 1.)Based on dc measurement at thermal equilibrium; case temperature maintained at 30°C ± 2°C. www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 85612 Rev. 3, 01-Apr-99 TZQ5221B...TZQ5267B Vishay Telefunken Ptot – Total Power Dissipation ( mW ) 600 500 400 300 200 100 0 0 40 80 120 200 160 Tamb – Ambient Temperature ( °C ) 95 9602 TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) Characteristics (Tj = 25_C unless otherwise specified) 10 5 IZ=5mA 0 –5 0 30 40 50 C D – Diode Capacitance ( pF ) 200 Tj = 25°C 100 IZ=5mA DVZ 10 150 VR = 2V Tj = 25°C 100 50 1 0 0 5 10 15 20 25 VZ – Z-Voltage ( V ) 95 9598 0 5 10 15 20 25 VZ – Z-Voltage ( V ) 95 9601 Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C Figure 5. Diode Capacitance vs. Z–Voltage 100 1.3 VZtn=VZt/VZ(25°C) 1.2 TKVZ=10 10–4/K 8 6 1.1 4 2 10–4/K 10–4/K 10–4/K 10–4/K 0 –2 10–4/K 1.0 –4 10–4/K 0.9 0.8 –60 IF – Forward Current ( mA ) VZtn – Relative Voltage Change 20 VZ – Z-Voltage ( V ) Figure 4. Temperature Coefficient of Vz vs. Z–Voltage 1000 95 9599 10 95 9600 Figure 1. Total Power Dissipation vs. Ambient Temperature – Voltage Change ( mV ) 15 10 Tj = 25°C 1 0.1 0.01 0.001 0 60 120 180 240 Tj – Junction Temperature ( °C ) Figure 3. Typical Change of Working Voltage vs. Junction Temperature Document Number 85612 Rev. 3, 01-Apr-99 0 95 9605 0.2 0.4 0.6 0.8 1.0 VF – Forward Voltage ( V ) Figure 6. Forward Current vs. Forward Voltage www.vishay.de • FaxBack +1-408-970-5600 3 (6) TZQ5221B...TZQ5267B Vishay Telefunken 1000 r Z – Differential Z-Resistance ( W ) 100 IZ – Z-Current ( mA ) 80 Ptot=500mW Tamb=25°C 60 40 20 IZ=1mA 100 5mA 10 10mA Tj = 25°C 1 0 0 4 8 12 16 20 0 VZ – Z-Voltage ( V ) 95 9604 5 10 Figure 7. Z–Current vs. Z–Voltage 15 20 25 VZ – Z-Voltage ( V ) 95 9606 Figure 9. Differential Z–Resistance vs. Z–Voltage 50 Ptot=500mW Tamb=25°C IZ – Z-Current ( mA ) 40 30 20 10 0 15 20 25 30 35 VZ – Z-Voltage ( V ) 95 9607 Z thp – Thermal Resistance for Pulse Cond. (K/W) Figure 8. Z–Current vs. Z–Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse RthJA=300K/W DT=Tjmax–Tamb 10 tp/T=0.01 tp/T=0.1 tp/T=0.02 iZM=(–VZ+(VZ2+4rzj tp/T=0.05 1 10–1 100 101 DT/Zthp)1/2)/(2rzj) 102 tp – Pulse Length ( ms ) 95 9603 Figure 10. Thermal Response www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 85612 Rev. 3, 01-Apr-99 TZQ5221B...TZQ5267B Vishay Telefunken Dimensions in mm 96 12071 Document Number 85612 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) TZQ5221B...TZQ5267B Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 6 (6) Document Number 85612 Rev. 3, 01-Apr-99