ISSI IS61LV12816-10T 128k x 16 high-speed cmos static ram with 3.3v supply Datasheet

ISSI
IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
®
NOVEMBER 2000
FEATURES
DESCRIPTION
•
•
•
•
•
The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
High-speed access time: 8, 10, 12, and 15 ns
CMOS low power operation
TTL and CMOS compatible interface levels
Single 3.3V ± 10% power supply
Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV12816 is packaged in the JEDEC standard 44-pin
400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 48-pin mini
BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K x 16
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
1
ISSI
IS61LV12816
®
PIN CONFIGURATIONS
44-Pin SOJ (K)
44-Pin TSOP (T)
A4
1
44
A5
A3
2
43
A6
A2
3
42
A7
A1
4
41
OE
A0
5
40
UB
CE
6
39
LB
I/O0
7
38
I/O15
I/O1
8
37
I/O14
I/O2
9
36
I/O13
I/O3
10
35
I/O12
Vcc
11
34
GND
GND
12
33
Vcc
I/O4
13
32
I/O11
I/O5
14
31
I/O10
I/O6
15
30
I/O9
I/O7
16
29
I/O8
WE
17
28
NC
A16
18
27
A8
A15
19
26
A9
A14
20
25
A10
A13
21
24
A11
A12
22
23
NC
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
48-Pin mini BGA (B)
2
3
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
44-Pin LQFP (LQ)
4
5
6
OE
A0
A1
A2
N/C
B
I/O8
UB
A3
A4
CE
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
GND
I/O11
NC
A7
I/O3
Vcc
E
Vcc
I/O12
NC
A16
I/O4
GND
F
I/O14
I/O13
A14
A15
I/O5
I/O6
G
I/O15
NC
A12
A13
WE
I/O7
H
NC
A8
A9
A10
A11
NC
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
44 43 42 41 40 39 38 37 36 35 345
33
1
32
2
31
3
30
4
29
5
TOP VIEW
28
6
27
7
26
8
25
9
24
10
23
11
12 13 14 15 16 17 18 19 20 21 22
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
WE
A0
A1
A2
A3
A4
NC
A5
A6
A7
A8
A
LB
A16
A15
A14
A13
A12
A11
A10
A9
OE
UB
LB
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
ISSI
IS61LV12816
®
OPERATING RANGE
PIN DESCRIPTIONS
Range
Ambient Temperature
Commercial
0°C to + 70°C
Industrial
–40°C to + 85°C
A0-A16
Address Inputs
I/O0-I/O15
Data Inputs/Outputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
LB
Lower-byte Control (I/O0-I/O7)
UB
Upper-byte Control (I/O8-I/O15)
NC
No Connection
Vcc
Power
GND
Ground
VCC
3.3V ± 10%
3.3V ± 10%
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VCC
VTERM
TSTG
TBIAS
PT
IOUT
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Temperature Under Bias:
Com.
Ind.
Power Dissipation
DC Output Current
Value
–0.5 to 5.0
–0.5 to Vcc + 0.5
–65 to + 150
–10 to + 85
–45 to + 90
2.0
±20
Unit
V
V
°C
°C
°C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
—
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
—
0.4
V
VIH
Input HIGH Voltage(1)
2
VCC + 0.3
V
VIL
Input LOW Voltage(1)
–0.3
0.8
V
ILI
Input Leakage
GND - VIN - VCC
–1
1
µA
ILO
Output Leakage
GND - VOUT - VCC, Outputs Disabled
–1
1
µA
Note:
1. VIL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns).
VIH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width - 2.0 ns).
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
3
ISSI
IS61LV12816
®
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE
CE
OE
LB
UB
X
H
X
H
H
H
L
L
L
H
L
L
L
L
L
L
L
L
X
H
X
L
L
L
X
X
X
X
X
H
L
H
L
L
H
L
X
X
H
H
L
L
H
L
L
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
DOUT
High-Z
DOUT
DIN
High-Z
DIN
Vcc Current
High-Z
High-Z
High-Z
High-Z
DOUT
DOUT
High-Z
DIN
DIN
ISB1, ISB2
ICC
ICC
ICC
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol
-8 ns
Min. Max.
-10 ns
Min. Max.
-12 ns
Min. Max.
-15 ns
Min. Max.
Parameter
Test Conditions
Unit
ICC
Vcc Operating
Supply Current
VCC = Max., CE = VIL
IOUT = 0 mA, f = Max.
Com.
Ind.
—
—
150
160
—
—
125
135
—
—
110
120
—
—
90
100
mA
ISB1
TTL Standby
Current
(TTL Inputs)
VCC = Max.,
VIN = VIH or VIL
CE • VIH, f = max
Com.
Ind.
—
—
50
60
—
—
40
50
—
—
35
45
—
—
30
40
mA
ISB2
CMOS Standby
Current
(CMOS Inputs)
VCC = Max.,
CE - VCC – 0.2V,
VIN > VCC – 0.2V, or
VIN - 0.2V, f = 0
Com.
Ind.
—
—
10
20
—
—
10
20
—
—
10
20
—
—
10
20
mA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
ISSI
IS61LV12816
®
CAPACITANCE(1)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
Parameter
-8 ns
Min. Max
-10 ns
Min. Max.
-12 ns
Min.
Max.
-15 ns
Min.
Max.
Unit
tRC
Read Cycle Time
8
—
10
—
12
—
15
—
ns
tAA
Address Access Time
—
8
—
10
—
12
—
15
ns
tOHA
Output Hold Time
3
—
3
—
3
—
3
—
ns
tACE
CE Access Time
8
—
—
10
—
12
—
15
ns
OE Access Time
—
3
—
4
—
5
—
6
ns
(2)
OE to High-Z Output
—
3
—
4
—
5
0
6
ns
(2)
OE to Low-Z Output
0
—
0
—
0
—
0
—
ns
tHZCE(2) CE to High-Z Output
0
3
0
4
0
5
0
8
ns
tLZCE(2) CE to Low-Z Output
3
—
3
—
3
—
3
—
ns
tDOE
tHZOE
tLZOE
LB, UB Access Time
—
3
—
4
—
5
—
6
ns
(2)
tHZB
LB, UB to High-Z Output
0
3
0
4
0
5
0
6
ns
tLZB(2)
LB, UB to Low-Z Output
0
—
0
—
0
—
0
—
ns
tBA
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels
of 0V to 3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
3.3V
OUTPUT
OUTPUT
30 pF
Including
jig and
scope
Figure 1.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
319 Ω
319 Ω
3.3V
353 Ω
5 pF
Including
jig and
scope
353 Ω
Figure 2.
5
ISSI
IS61LV12816
®
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = VIL, UB or LB = VIL)
t RC
ADDRESS
t AA
t OHA
t OHA
DOUT
DATA VALID
PREVIOUS DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
t RC
ADDRESS
t AA
t OHA
OE
t HZOE
t DOE
t LZOE
CE
t ACE
t HZCE
t LZCE
LB, UB
DOUT
HIGH-Z
t LZB
t BA
t HZB
DATA VALID
UB_CEDR2.eps
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = VIL.
3. Address is valid prior to or coincident with CE LOW transition.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
ISSI
IS61LV12816
®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
Symbol
Parameter
-8 ns
Min. Max
-10 ns
Min. Max.
-12 ns
Min. Max.
-15 ns
Min. Max.
Unit
tWC
Write Cycle Time
8
—
10
—
12
—
15
—
ns
tSCE
CE to Write End
6.5
—
8
—
8
—
10
—
ns
tAW
Address Setup Time
to Write End
6.5
—
8
—
8
—
10
—
ns
tHA
Address Hold from Write End
0
—
0
—
0
—
0
—
ns
tSA
Address Setup Time
0
—
0
—
0
—
0
—
ns
tPWB
LB, UB Valid to End of Write
6.5
—
8
—
9
—
10
—
ns
tPWE1
WE Pulse Width (OE = HIGH)
5
—
7
—
8
—
10
—
ns
tPWE2
WE Pulse Width (OE = LOW)
6.5
—
8
—
10
—
11
—
ns
tSD
Data Setup to Write End
4
—
5
—
6
—
7
—
ns
tHD
Data Hold from Write End
0
—
0
—
0
—
0
—
ns
tHZWE(3) WE LOW to High-Z Output
—
3
—
4
—
5
—
6
ns
tLZWE(3) WE HIGH to Low-Z Output
0
—
0
—
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V
to 3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid
states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing
are referenced to the rising or falling edge of the signal that terminates the write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
7
ISSI
IS61LV12816
®
WRITE CYCLE NO. 1(1,2) (CE Controlled, OE = HIGH or LOW)
t WC
VALID ADDRESS
ADDRESS
t SA
t SCE
t HA
CE
t AW
t PWE1
t PWE2
WE
t PBW
UB, LB
t HZWE
DOUT
DATA UNDEFINED
t LZWE
HIGH-Z
t SD
DIN
t HD
DATAIN VALID
UB_CEWR1.eps
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
ISSI
IS61LV12816
®
WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)
t WC
ADDRESS
VALID ADDRESS
t HA
OE
CE
LOW
t AW
t PWE1
WE
t SA
t PBW
UB, LB
t HZWE
DOUT
t LZWE
HIGH-Z
DATA UNDEFINED
t SD
t HD
DATAIN VALID
DIN
UB_CEWR2.eps
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
t WC
ADDRESS
VALID ADDRESS
OE
LOW
CE
LOW
t HA
t AW
t PWE2
WE
t SA
t PBW
UB, LB
t HZWE
DOUT
DATA UNDEFINED
t LZWE
HIGH-Z
t SD
DIN
t HD
DATAIN VALID
UB_CEWR3.eps
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
9
ISSI
IS61LV12816
®
WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3)
t WC
ADDRESS
t WC
ADDRESS 1
ADDRESS 2
OE
t SA
CE
LOW
t HA
t SA
WE
UB, LB
t HA
t PBW
t PBW
WORD 1
WORD 2
t HZWE
DOUT
t LZWE
HIGH-Z
DATA UNDEFINED
t HD
t SD
DIN
DATAIN
VALID
t HD
t SD
DATAIN
VALID
UB_CEWR4.eps
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be
in valid states to initiate a Write, but any can be deasserted to terminate the Write. The t SA, t HA, t SD, and t HD timing is
referenced to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
ISSI
IS61LV12816
IS61LV12816 STANDARD VERSION
ORDERING INFORMATION
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No.
Package
®
IS61LV12816 STANDARD VERSION
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No.
Package
8
IS61LV12816-8B
IS61LV12816-8K
IS61LV12816-8LQ
IS61LV12816-8T
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
8
IS61LV12816-8BI
IS61LV12816-8KI
IS61LV12816-8LQI
IS61LV12816-8TI
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
10
IS61LV12816-10B
IS61LV12816-10K
IS61LV12816-10LQ
IS61LV12816-10T
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
10
IS61LV12816-10BI
IS61LV12816-10KI
IS61LV12816-10LQI
IS61LV12816-10TI
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
12
IS61LV12816-12B
IS61LV12816-12K
IS61LV12816-12LQ
IS61LV12816-12T
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
12
IS61LV12816-12BI
IS61LV12816-12KI
IS61LV12816-12LQI
IS61LV12816-12TI
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
15
IS61LV12816-15B
IS61LV12816-15K
IS61LV12816-15LQ
IS61LV12816-15T
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
15
IS61LV12816-15BI
IS61LV12816-15KI
IS61LV12816-15LQI
IS61LV12816-15TI
mini BGA (6mm x 8mm)
400-mil Plastic SOJ
LQFP
Plastic TSOP
ISSI
®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: [email protected]
www.issi.com
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
11
Similar pages