MA-COM MA4E2532M-1113T Surmounttm low & medium barrier silicon schottky diodes: ring quad sery Datasheet

MA4E2532L-1113, MA4E2532M-1113
SURMOUNTTM Low & Medium Barrier
Silicon Schottky Diodes: Ring Quad Series
Features
M/A-COM Products
Rev. V3
Case Style 1113
• Extremely Low Parasitic Capacitance and Inductance
• Surface Mountable in Microwave Circuits, No
Wirebonds Required
• Rugged HMIC Construction with Polyimide
Scratch Protection
• Reliable, Multilayer Metalization with a Diffusion
Barrier, 100% Stabilization Bake (300°C, 16
hours)
• Lower Susceptibility to ESD Damage
A
B
Description
The MA4E2532-1113 Series SURMOUNTTM Low
and Medium Barrier, Silicon Schottky Ring Quad
Diodes are fabricated with the patented Heterolithic
Microwave Integrated Circuit (HMIC) process.
HMIC circuits consist of Silicon pedestals which
form diodes or via conductors embedded in a glass
dielectric, which acts as the low dispersion, low
loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to
have excellent loss and power dissipation characteristics in a low profile, reliable device.
The Surmount Schottky devices are excellent
choices for circuits requiring the small parasitics of
a beam lead device coupled with the superior mechanical performance of a chip. The Surmount
structure employs very low resistance silicon vias
to connect the Schottky contacts to the metalized
mounting pads on the bottom surface of the chip.
These devices are reliable, repeatable, and a lower
cost performance solution to conventional devices.
They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes.
The multi-layer metallization employed in the fabrication of the Surmount Schottky junctions includes
a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating
stabilization bake at 300°C.
C
D
E
D
Case Style 1113
DIM
INCHES
MILLIMETERS
MIN.
MAX.
MIN.
MAX.
A
0.0445
0.0465
1.130
1.180
B
0.0445
0.0465
1.130
1.180
C
0.0040
0.0080
0.102
0.203
D Sq.
0.0128
0.0148
0.325
0.375
E
0.0128
0.0148
0.325
0.375
The “0505” outline allows for Surface Mount placement and multi-functional polarity orientations.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
• North America Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
volume is not guaranteed.
product(s) or information contained herein without notice.
MA4E2532L-1113, MA4E2532M-1113
SURMOUNTTM Low & Medium Barrier
Silicon Schottky Diodes: Ring Quad Series
M/A-COM Products
Rev. V3
Electrical Specifications @ 25°C (Measured as Single Diodes)
Vf @ 1 mA
(mV)
Δ Vf @ 1 mA
Ct @ 0 V
(pF)
Rt Slope Resistance
(Vf1-Vf2) /
(10.5 mA - 9.5 mA)
(Ω)
Model Number
Type
Recommended
Freq. Range
MA4E2532L-1113
Low Barrier
DC - 18 GHz
330 Max.
300 Typ.
10 Max.
0.16 Max.
0.10 Typ.
16 Typ.
20 Max.
MA4E2532M-1113
Medium Barrier
DC - 18 GHz
470 Max.
440 Typ.
10 Max.
0.18 Max.
0.12 Typ.
10 Typ.
18 Max.
(mV)
1. Rt is the dynamic slope resistance where Rt = Rs + Rj where Rj = 26 / Idc (Idc is in mA) and Rs is the Ohmic Resistance.
Applications
Die Bonding
TM
The MA4E2532-1113 Series SURMOUNT Low
and Medium Barrier Silicon Schottky Ring Quad
Diodes are recommended for use in microwave
circuits through Ku band frequencies for lower
power applications such as mixers, sub-harmonic
mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or
soft substrate circuit with solder.
Handling
All semiconductor chips should be handled with
care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped
tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to
minimize damage.
The rugged construction of these Surmount devices allows the use of standard handling and die
attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should
insure that abrasion and mechanical shock are
minimized.
Die attach for these devices is made simple
through the use of surface mount die attach technology. Mounting pads are conveniently located on
the bottom surface of these devices, and are opposite for the active junction. The devices are well
suited for high temperature solder attachment onto
hard substrates. 80Au/20Sn and Sn63/Pb36/Ag2
solders are acceptable for usage.
For Hard substrates, we recommend utilizing a
vacuum tip and force of 60 to 100 grams applied
uniformly to the top surface of the device, using a
hot gas bonder with equal heat applied across the
bottom mounting pads of the device. When soldering to soft substrates it is recommended to use a
lead-tin interface at the circuit board mounting
pads. Position the die so that its mounting pads
are aligned with the circuit board mounting pads.
Reflow the solder paste by applying equal heat to
the circuit at both die-mounting pads. The solder
joint must Not be made one at a time, creating unequal heat flow and thermal stress. Solder reflow
should Not be performed by causing heat to flow
through the top surface of the die. Since the HMIC
glass is transparent, the edges of the mounting
pads can be visually inspected through the die after
die attach is completed.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
• North America Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
volume is not guaranteed.
product(s) or information contained herein without notice.
MA4E2532L-1113, MA4E2532M-1113
SURMOUNTTM Low & Medium Barrier
Silicon Schottky Diodes: Ring Quad Series
M/A-COM Products
Rev. V3
MA4E2532L-1113 Low Barrier SPICE PARAMETERS
Is
(nA)
Rs
(Ω)
N
Cj0
(pF)
M
Ik
(mA)
Cjpar
(pF)
Vj
(V)
FC
BV
(V)
IBV
(mA)
26
12.8
1.20
1.0 E-2
0.5
14
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
MA4E2532M-1113 Medium Barrier SPICE PARAMETERS (Per Diode)*
Is
(nA)
Rs
(Ω)
N
Cj0
(pF)
M
Ik
(mA)
Cpar
(pF)
Vj
(V)
FC
BV
(V)
IBV
(mA)
5 E-1
9.6
1.20
1.0 E-2
0.5
10
9.0 E-2
8.0 E-2
0.5
5.0
1.0 E-2
Spice Parameters (Per Diode) are based on the MA4E2502 Series datasheet.
Circuit Mounting Dimensions (Inches)
0.020
0.020
0.020
0.020
0.013
0.013
0.020
0.020
Ordering Information
Part Number
Packaging
MA4E2532L-1113W
Wafer on Frame
MA4E2532L-1113
Die in Carrier
MA4E2532L-1113T
Tape/Reel
MA4E2532M-1113W
Wafer on Frame
MA4E2532M-1113
Die in Carrier
MA4E2532M-1113T
Tape/Reel
Absolute Maximum Ratings 1
Parameter
Value
Operating Temperature
-40°C to +150°C
Storage Temperature
-40°C to +150°C
Junction Temperature
+175°C
Forward Current
20 mA
Reverse Voltage (10 uA)
5V
RC C.W. Incident Power
+20 dBm
RF & DC Dissipated Power
50 mW
Electrostatic Discharge
2
( ESD ) Classification
Class 0
1. Exceeding any of these values may result in permanent damage.
2. Human Body Model
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
• North America Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
volume is not guaranteed.
product(s) or information contained herein without notice.
MA4E2532L-1113, MA4E2532M-1113
SURMOUNTTM Low & Medium Barrier
Silicon Schottky Diodes: Ring Quad Series
M/A-COM Products
Rev. V3
Schematic
Ct
Ls
Rs
Rj
Average Schematic Values per Diode
Model Number
Ls (nH)
Rs (Ω)
Rj (Ω)
Ct (pF)
MA4E2532L-1113
0.8
13.4
26 / Idc
0.10
MA4E2532M-1113
0.8
9.4
26 / Idc
0.12
MA4E2532L-1113, MA4E2532M-1113
Equivalent Circuit
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for
• North America Tel: 800.366.2266 / Fax: 978.366.2266
development. Performance is based on target specifications, simulated results, and/or prototype
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
measurements. Commitment to develop is not guaranteed.
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macom.com for additional data sheets and product information.
ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has
been fixed. Engineering samples and/or test data may be available. Commitment to produce in
MA-COM Technical Solutions and its affiliates reserve the right to make changes to the
volume is not guaranteed.
product(s) or information contained herein without notice.
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