Cypress CY7C1018DV33 1-mbit (128k x 8) static ram Datasheet

CY7C1018DV33
1-Mbit (128K x 8) Static RAM
Functional Description[1]
Features
• Pin- and function-compatible with CY7C1018CV33
• High speed
— tAA = 10 ns
• Low Active Power
— ICC = 60 mA @ 10 ns
• Low CMOS Standby Power
•
•
•
•
•
•
— ISB2 = 3 mA
2.0V Data retention
Automatic power-down when deselected
CMOS for optimum speed/power
Center power/ground pinout
Easy memory expansion with CE and OE options
Available in Pb-free 32-pin 300-Mil wide Molded SOJ
The CY7C1018DV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O0 through I/O7) is then written into the location
specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1018DV33 is available in Pb-free 32-pin 300-Mil
wide Molded SOJ.
Logic Block Diagram
Pin Configuration
SOJ
Top View
I/O0
INPUTBUFFER
CE
WE
CE
I/O0
I/O1
VCC
V SS
I/O1
I/O2
SENSE AMPS
ROW DECODER
A0
A1
A2
A3
A4
A5
A6
A7
A8
A0
A1
A2
A3
128K × 8
ARRAY
I/O3
I/O2
I/O3
WE
A4
A5
A6
A7
I/O4
I/O5
COLUMN
DECODER
POWER
DOWN
I/O6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A16
A15
A14
A13
OE
I/O7
I/O6
VSS
VCC
I/O5
I/O4
A12
A11
A10
A9
A8
I/O7
A9
A10
A11
A12
A13
A14
A15
A16
OE
Note
1. For guidelines on SRAM system designs, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05465 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised December 8, 2010
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CY7C1018DV33
Selection Guide
–10 (Industrial)
Unit
Maximum Access Time
10
ns
Maximum Operating Current
60
mA
Maximum Standby Current
3
mA
DC Input Voltage[2] ................................ –0.3V to VCC + 0.3V
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature .............................. –65 C to +150 C
Ambient Temperature with
Power Applied.......................................... –55 C to +125 C
Supply Voltage on VCC to Relative GND[2] ... –0.3V to + 4.6V
DC Voltage Applied to Outputs[2]
in High-Z State .......................................–0.3V to VCC + 0.3V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
VCC
Speed
Industrial
–40 C to +85 C
3.3V  0.3V
10 ns
DC Electrical Characteristics Over the Operating Range
Parameter
Description
–10 (Industrial)
Test Conditions
VOH
Output HIGH Voltage
VCC = Min.,
IOH = –4.0 mA
VOL
Output LOW Voltage
VCC = Min.,
IOL = 8.0 mA
VIH
Input HIGH Voltage
Min.
Unit
Max.
2.4
Voltage[2]
V
0.4
V
2.0
VCC + 0.3
V
VIL
Input LOW
–0.3
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
A
IOZ
Output Leakage Current
GND < VI < VCC, Output Disabled
–1
+1
A
ICC
VCC Operating Supply Current
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
100MHz
60
mA
83MHz
55
mA
66MHz
45
mA
40MHz
30
mA
ISB1
Automatic CE Power-down
Current—TTL Inputs
Max. VCC, CE > VIH
VIN > VIH or VIN < VIL, f = fMAX
10
mA
ISB2
Automatic CE Power-down
Current—CMOS Inputs
Max. VCC, CE > VCC – 0.3V,
VIN > VCC – 0.3V, or VIN < 0.3V, f = 0
3
mA
Note
2. VIL (min.) = –2.0V and VIH(max) = VCC + 1V for pulse durations of less than 5 ns.
Document #: 38-05465 Rev. *E
Page 2 of 10
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CY7C1018DV33
Capacitance[3]
Parameter
Description
CIN
Input Capacitance
COUT
Output Capacitance
Test Conditions
Max.
Unit
8
pF
8
pF
400-Mil
Wide SOJ
Unit
57.61
C/W
40.53
C/W
TA = 25 C, f = 1 MHz, VCC = 3.3V
Thermal Resistance[3]
Parameter
Description
JA
Thermal Resistance
(Junction to Ambient)
JC
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
AC Test Loads and Waveforms[4]
ALL INPUT PULSES
3.0V
Z = 50
90%
OUTPUT
50 
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
GND
30 pF*
90%
10%
10%
1.5V
Rise Time: 1 V/ns
(a)
(b)
Fall Time: 1 V/ns
High-Z characteristics: R 317
3.3V
OUTPUT
R2
351
5 pF
(c)
Notes
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
Document #: 38-05465 Rev. *E
Page 3 of 10
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CY7C1018DV33
AC Switching Characteristics Over the Operating Range [5]
Parameter
Description
–10 (Industrial)
Min.
Max.
Unit
Read Cycle
tpower[6]
VCC(typical) to the first access
100
s
tRC
Read Cycle Time
10
ns
tAA
Address to Data Valid
tOHA
Data Hold from Address Change
tACE
CE LOW to Data Valid
10
ns
tDOE
OE LOW to Data Valid
5
ns
tLZOE
OE LOW to Low-Z
tHZOE
OE HIGH to High-Z[7, 8]
CE LOW to
Low-Z[8]
tHZCE
CE HIGH to
High-Z[7, 8]
tPU[9]
tPD[9]
CE LOW to Power-up
tLZCE
Write Cycle
10
3
ns
0
ns
5
3
ns
ns
5
0
CE HIGH to Power-down
ns
ns
ns
10
ns
[10, 11]
tWC
Write Cycle Time
10
ns
tSCE
CE LOW to Write End
8
ns
tAW
Address Set-up to Write End
8
ns
tHA
Address Hold from Write End
0
ns
tSA
Address Set-up to Write Start
0
ns
tPWE
WE Pulse Width
7
ns
tSD
Data Set-up to Write End
5
ns
tHD
Data Hold from Write End
0
ns
3
ns
tLZWE
tHZWE
WE HIGH to
Low-Z[8]
WE LOW to
High-Z[7, 8]
5
ns
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V.
6. tPOWER gives the minimum amount of time that the power supply should be at typical VCC values until the first memory access can be performed.
7. tHZOE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in (c) of AC Test Loads. Transition is measured when the outputs enter a high impedance state.
8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
9. This parameter is guaranteed by design and is not tested.
10. The internal Write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a Write, and the transition of any of these
signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the Write.
11. The minimum Write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document #: 38-05465 Rev. *E
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CY7C1018DV33
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
VDR
VCC for Data Retention
ICCDR
Data Retention Current
tCDR [3]
Chip Deselect to Data Retention Time
tR[12]
Operation Recovery Time
Min.
Max.
2
Unit
V
3
VCC = VDR = 2.0V, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
mA
0
ns
tRC
ns
Data Retention Waveform
DATA RETENTION MODE
3.0V
VCC
VDR > 2V
3.0V
tR
tCDR
CE
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)[13, 14]
tRC
RC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[14, 15]
ADDRESS
tRC
CE
tACE
OE
tHZOE
tDOE
DATA OUT
tLZOE
HIGH IMPEDANCE
tHZCE
DATA VALID
tLZCE
VCC
SUPPLY
CURRENT
HIGH
IMPEDANCE
tPD
tPU
50%
ICC
50%
ISB
Notes
12. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 s or stable at VCC(min.) > 50 s.
13. Device is continuously selected. OE, CE = VIL.
14. WE is HIGH for Read cycle.
15. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05465 Rev. *E
Page 5 of 10
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CY7C1018DV33
Switching Waveforms (continued)
Write Cycle No. 1 (CE Controlled)[16, 17]
tWC
ADDRESS
tSCE
CE
tSA
tSCE
tAW
tHA
tPWE
WE
tSD
DATA I/O
tHD
DATA VALID
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[16, 17]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
OE
tSD
DATA I/O
tHD
DATAIN VALID
NOTE 18
tHZOE
Notes
16. Data I/O is high impedance if OE = VIH.
17. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
18. During this period the I/Os are in the output state and input signals should not be applied.
Document #: 38-05465 Rev. *E
Page 6 of 10
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CY7C1018DV33
Switching Waveforms (continued)
Write Cycle No. 3 (WE Controlled, OE LOW)[11, 17]
tWC
ADDRESS
tSCE
CE
tAW
tSA
tHA
tPWE
WE
tSD
DATA I/O
NOTE 18
tHD
DATA VALID
tLZWE
tHZWE
Truth Table
CE
OE
WE
I/O0–I/O7
Mode
Power
H
X
X
High-Z
Power-down
Standby (ISB)
L
L
H
Data Out
Read
Active (ICC)
L
X
L
Data In
Write
Active (ICC)
L
H
H
High-Z
Selected, Outputs Disabled
Active (ICC)
Ordering Information
Speed
(ns)
10
Package
Diagram
Ordering Code
CY7C1018DV33-10VXI
Ordering Code Definitions
CY 7 C 1 018 D V33 - 10
VX
51-85041
Package Type
32-pin (300-Mil) Molded SOJ (Pb-free)
Operating
Range
Industrial
I
Temperature Range:
I = Industrial
Package Type:
VX = 32-pin Molded SOJ (Pb-free)
Speed: 10 ns
Voltage range: V33 = 3 V to 3.6 V
D = C9, 90 nm Technology
018 = 1-Mbit density
1 = Fast Asynchronous SRAM family
Technology Code: C = CMOS
7 = SRAM
CY = Cypress
Please contact your local Cypress sales representative for availability of these parts.
Document #: 38-05465 Rev. *E
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CY7C1018DV33
Package Diagram
Figure 1. 32-pin (300-Mil) Molded SOJ (51-85041)
51-85041 *B
All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05465 Rev. *E
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CY7C1018DV33
Document History Page
Document Title: CY7C1018DV33, 1-Mbit (128K x 8) Static RAM
Document Number: 38-05465
REV.
ECN NO.
Issue Date
Orig. of
Change
**
201560
See ECN
SWI
Advance Information data sheet for C9 IPP
*A
238471
See ECN
RKF
DC parameters modified as per EROS (Spec # 01-02165)
Pb-free Offering in the Ordering Information
*B
262950
See ECN
RKF
Added Data Retention Characteristics table
Added Tpower Spec in Switching Characteristics table
Shaded Ordering Information
*C
307598
See ECN
RKF
Reduced Speed bins to -8 and -10 ns
*D
520647
See ECN
VKN
Converted from Preliminary to Final
Removed Commercial Operating range
Removed 8 ns speed bin
Added ICC values for the frequencies 83MHz, 66MHz and 40MHz
Updated Thermal Resistance table
Updated Ordering Information Table
Changed Overshoot spec from VCC+2V to VCC+1V in footnote #2
*E
3104943
12/08/2010
AJU
Added Ordering Code Definitions.
Updated Package Diagram.
Document #: 38-05465 Rev. *E
Description of Change
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CY7C1018DV33
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the
office closest to you, visit us at Cypress Locations.
Products
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Touch Sensing
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© Cypress Semiconductor Corporation, 2004-2010. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for
the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended
to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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