Infineon BSC159N10LSFG Optimosâ ¢2 power-transistor Datasheet

BSC159N10LSF G
OptiMOS™2 Power-Transistor
Product Summary
Features
• N-channel, logic level
• Very low gate charge x R DS(on) product (FOM)
V DS
100
V
R DS(on),max
15.9
mΩ
ID
63
A
• Low on-resistance R DS(on)
PG-TDSON-8
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant; Halogen Free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
Package
Marking
BSC159N10LSF G
PG-TDSON-8
159N10LS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
63
T C=100 °C
40
T A=25 °C,
R thJA=50 K/W 2)
Unit
A
9.4
Pulsed drain current3)
I D,pulse
T C=25 °C
252
Avalanche energy, single pulse
E AS
I D=50 A, R GS=25 Ω
155
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
114
W
Operating and storage temperature
T j, T stg
-55 ... 150
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 2.09
55/150/56
page 1
2009-11-04
BSC159N10LSF G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
bottom
-
-
1.1
top
-
-
18
minimal footprint
-
-
62
6 cm2 cooling area 2)
-
-
50
100
-
-
1.2
1.85
2.4
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R thJC
R thJA
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
Gate threshold voltage
V GS(th)
V DS=V GS, I D=72 µA
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.01
1
V DS=100 V, V GS=0 V,
T j=125 °C
-
10
100
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5 V, I D=25 A
-
17.2
21.5
mΩ
V GS=10 V, I D=50 A
-
12.2
15.9
-
1
-
Ω
30
59
-
S
Gate resistance
RG
Transconductance
g fs
1)
|V DS|>2|I D|R DS(on)max,
I D=50 A
J-STD20 and JESD22
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
see figure 3
Rev. 2.09
page 2
2009-11-04
BSC159N10LSF G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
1900
2500
-
470
630
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
11
-
Turn-on delay time
t d(on)
-
13
-
Rise time
tr
-
24
-
Turn-off delay time
t d(off)
-
28
-
Fall time
tf
-
6
-
Gate to source charge
Q gs
-
7
-
Gate to drain charge
Q gd
-
4
-
-
8
-
V GS=0 V, V DS=50 V,
f =1 MHz
V DD=50 V, V GS=10 V,
I D=25 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 4)
V DD=50 V, I D=25 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
26
35
Gate plateau voltage
V plateau
-
3.7
-
Output charge
Q oss
-
45
60
nC
-
-
63
A
-
-
252
-
0.9
1.2
V
-
85
-
ns
-
228
-
nC
V DD=50 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
4)
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=50 V, I F=25 A,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 2.09
page 3
2009-11-04
BSC159N10LSF G
1 Power dissipation
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
120
80
100
60
I D [A]
P tot [W]
80
60
40
40
20
20
0
0
0
40
80
120
160
0
40
80
T C [°C]
120
160
10-2
10-1
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
1 µs
10 µs
102
100 µs
100
Z thJC [K/W]
0.5
I D [A]
1 ms
101
10 ms
0.2
0.1
0.05
10-1
DC
0.02
100
0.01
single pulse
10-1
10
10-2
-1
10
0
10
1
10
2
10
3
V DS [V]
Rev. 2.09
10-5
10-4
10-3
t p [s]
page 4
2009-11-04
BSC159N10LSF G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
200
30
7.5 V
3.5 V
10 V
25
160
4V
4.5 V
6V
20
I D [A]
R DS(on) [mΩ]
120
80
15
6V
7.5 V
10 V
10
4.5 V
40
4V
5
3.5 V
3.2 V
0
0
0
1
2
3
4
5
0
20
40
V DS [V]
60
80
100
80
100
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
160
100
80
120
g fs [S]
I D [A]
60
80
40
40
20
150 °C
25 °C
0
0
0
2
4
6
Rev. 2.09
0
20
40
60
I D [A]
V GS [V]
page 5
2009-11-04
BSC159N10LSF G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=25 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
30
3
25
2.5
2
720 µA
98%
V GS(th) [V]
R DS(on) [mΩ]
20
15
typ
72 µA
1.5
10
1
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
104
1000
Ciss
103
Coss
I F [A]
C [pF]
100
102
150 °C, 98%
25 °C
150 °C
Crss
10
25 °C, 98%
101
100
1
0
20
40
60
80
Rev. 2.09
0
0.5
1
1.5
2
V SD [V]
V DS [V]
page 6
2009-11-04
BSC159N10LSF G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=25 A pulsed
parameter: T j(start)
parameter: V DD
100
10
8
25 °C
80 V
6
125 °C
10
50 V
V GS [V]
I AS [A]
100 °C
20 V
4
2
1
0
1
10
100
1000
0
10
20
30
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
110
V GS
Qg
V BR(DSS) [V]
105
100
V g s(th)
95
Q g(th)
Q sw
Q gs
90
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 2.09
page 7
2009-11-04
BSC159N10LSF G
Package Outline: PG-TDSON-8
Rev. 2.09
page 8
2009-11-04
BSC159N10LSF G
Dimensions in mm
Rev. 2.09
page 9
2009-11-04
BSC159N10LSF G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.09
page 10
2009-11-04
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