IRF IRFH5010TR2PBF Hexfet power mosfet Datasheet

PD -96297
IRFH5010PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
RG (typical)
ID
100
V
9.0
mΩ
65
1.2
nC
100
(@Tc(Bottom) = 25°C)
Ω
h
PQFN 5X6 mm
A
Applications
• Secondary Side Synchronous Rectification
• Inverters for DC Motors
• DC-DC Brick Applications
Features and Benefits
Benefits
Features
Low RDSon (< 9 mΩ)
Low Thermal Resistance to PCB (<0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRFH5010TRPBF
IRFH5010TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Lower Conduction Losses
Increased Power Density
Increased Reliability
results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
400
Tape and Reel
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
g
c
g
Max.
100
± 20
13
11
100
h
70
400
3.6
250
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 8
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1
03/29/10
IRFH5010PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
∆VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Output Charge
Min.
100
–––
–––
2.0
–––
–––
–––
–––
–––
206
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
7.5
–––
-8.3
–––
–––
–––
–––
–––
65
11
4.3
20
30
24
18
Max. Units
Conditions
–––
V VGS = 0V, ID = 250uA
––– V/°C Reference to 25°C, ID = 1.0mA
9.0
mΩ VGS = 10V, ID = 50A
4.0
V
VDS = VGS, ID = 150µA
––– mV/°C
VDS = 100V, VGS = 0V
20
µA
250
VDS = 100V, VGS = 0V, TJ = 125°C
VGS = 20V
100
nA
-100
VGS = -20V
–––
S VDS = 25V, ID = 50A
98
VDS = 50V
–––
–––
VGS = 10V
nC
–––
ID = 50A
–––
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
1.2
9
12
27
8.6
4340
425
162
–––
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
e
Ω
ns
pF
VDD = 50V, VGS = 10V
ID = 50A
RG=1.3Ω
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Max.
227
50
Typ.
–––
–––
d
Units
mJ
A
Diode Characteristics
Parameter
Continuous Source Current
IS
ISM
VSD
trr
Qrr
ton
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Min.
Typ.
Max. Units
–––
–––
100
–––
–––
h
400
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
S
p-n junction diode.
TJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A, VDD = 50V
di/dt = 500A/µs
–––
–––
1.3
V
–––
34
51
ns
–––
256
384
nC
Time is dominated by parasitic Inductance
e
e
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f
f
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
22
Units
°C/W
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IRFH5010PbF
1000
1000
VGS
15V
10V
7.00V
5.00V
4.50V
4.25V
4.00V
3.75V
ID, Drain-to-Source Current (A)
100
10
BOTTOM
TOP
ID, Drain-to-Source Current (A)
TOP
100
1
3.75V
0.1
BOTTOM
VGS
15V
10V
7.00V
5.00V
4.50V
4.25V
4.00V
3.75V
10
3.75V
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.01
0.1
1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
100
T J = 150°C
10
T J = 25°C
1
VDS = 50V
≤60µs PULSE WIDTH
ID = 50A
VGS = 10V
2.0
1.5
1.0
0.5
0.1
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
-60 -40 -20 0
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 37A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = C ds + C gd
10000
Ciss
1000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
ID, Drain-to-Source Current (A)
1
Coss
Crss
100
12
10
VDS= 80V
VDS= 50V
VDS= 20V
8
6
4
2
0
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
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0
10
20
30
40
50
60
70
80
90
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
3
IRFH5010PbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 150°C
100
TJ = 25°C
10
1
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1000
100µsec
100
1msec
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
0.10
1.6
10
100
1000
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4.5
120
VGS(th) , Gate threshold Voltage (V)
Limited By Package
100
ID, Drain Current (A)
1
80
60
40
20
4.0
3.5
3.0
2.5
2.0
ID = 1.0A
1.5
ID = 1.0mA
ID = 500µA
ID = 150µA
1.0
0.5
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case (Bottom) Temperature
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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25
1000
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRFH5010PbF
ID = 50A
20
T J = 125°C
15
10
T J = 25°C
5
0
2
4
6
8
10
12
14
16
18
20
ID
5.4A
11.6A
BOTTOM 50A
TOP
800
600
400
200
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 15a. Switching Time Test Circuit
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I AS
0.01Ω
tp
10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
5
IRFH5010PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 18. Gate Charge Waveform
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IRFH5010PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRFH5010PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
†
††
†††
Indus trial
(per JE DE C JE S D47F
PQFN 5mm x 6mm
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.181mH, RG = 50Ω, IAS = 50A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8
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