PHILIPS BLT52 Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D175
BLT52
UHF power transistor
Product specification
Supersedes data of 1997 Oct 15
1998 Jan 28
Philips Semiconductors
Product specification
UHF power transistor
BLT52
FEATURES
PINNING
• Emitter ballasting resistors for an optimum
temperature profile
PIN
DESCRIPTION
1, 4, 5, 8
• Gold metallization ensures excellent reliability.
emitter
2, 3
base
6, 7
collector
APPLICATIONS
• Common emitter class-B operation in portable radio
transmitters in the 470 MHz communication band.
handbook, halfpage
8
5
DESCRIPTION
NPN silicon planar epitaxial power transistor encapsulated
in a ceramic SOT409A SMD package.
1
4
Top view
MBK150
Fig.1 Simplified outline SOT409A.
QUICK REFERENCE DATA
RF performance at Tmb ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
CW, class-B
1998 Jan 28
f
(MHz)
VCE
(V)
PL
(W)
7.5
7
6
3
470
2
Gp
(dB)
ηC
(%)
≥8
≥50
typ. 9.5
typ. 65
≥8
≥50
typ. 9.5
typ. 55
Philips Semiconductors
Product specification
UHF power transistor
BLT52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
2.5
A
Ptot
total power dissipation
Tmb ≤ 60 °C
−
13
W
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
thermal resistance from junction to mounting base
Rth j-mb
MGM485
10
handbook, halfpage
IC
(A)
1
10−1
1
10
VCE (V)
102
Tmb = 60 °C.
Fig.2 DC SOAR.
1998 Jan 28
3
Ptot = 13 W; Tmb ≤ 60 °C
VALUE
UNIT
8
K/W
Philips Semiconductors
Product specification
UHF power transistor
BLT52
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 20 mA
20
−
−
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 40 mA
10
−
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 4 mA
3
−
−
V
ICES
collector leakage current
VBE = 0; VCE = 7.5 V
−
−
1
mA
hFE
DC current gain
IC = 1.2 A; VCE = 5 V
25
−
−
Cc
collector capacitance
IE = ie = 0; VCB = 7.5 V; f = 1 MHz
−
24
−
pF
Cre
feedback capacitance
IC = 0; VCE = 7.5 V; f = 1 MHz
−
17
−
pF
MGM486
MGM487
100
50
handbook, halfpage
handbook, halfpage
Cc
(pF)
hFE
80
40
60
30
40
20
20
10
0
0.4
0
0.8
1.2
0
1.6
2.0
IC (mA)
0
VCE = 5 V; Tj = 25 °C.
Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0.001.
Fig.3
8
12
16
20
VCB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
DC current gain as a function of collector
current; typical values.
1998 Jan 28
4
Fig.4
4
Collector capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT52
APPLICATION INFORMATION
RF performance at Tmb ≤ 60 °C in a common emitter test circuit.
f
(MHz)
MODE OF OPERATION
CW, class-B
VCE
(V)
PL
(W)
7.5
7
470
6
3
Gp
(dB)
ηC
(%)
≥8
≥50
typ. 9.5
typ. 65
≥8
≥50
typ. 9.5
typ. 55
Ruggedness in class-B operation
The BLT52 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: CW, class-B operation; f = 470 MHz; VCE = 9 V and PL = 7 W; Tmb ≤ 60 °C.
MBK250
10
handbook, halfpage
Gp
(dB)
8
Gp
MGD257
100
ηC
(%)
10
handbook, halfpage
PL
(W)
80
8
60
6
4
40
4
2
20
2
0
0
6
ηC
0
0
2
4
6
PL (W)
8
0
1
2
CW, class-B operation; f = 470 MHz; VCE = 6 V;
tuned at PL = 3 W; Tmb ≤ 60 °C.
CW, class-B operation; f = 470 MHz; VCE = 6 V;
tuned at PL = 3 W; Tmb ≤ 60 °C.
Fig.5
Fig.6
Power gain and collector efficiency as
functions of load power; typical values.
1998 Jan 28
5
PIN (W)
3
Load power as a function of input power;
typical values.
Philips Semiconductors
Product specification
UHF power transistor
BLT52
MBK251
12
Gp
(dB)
10
handbook, halfpage
Gp
8
MGD259
80
ηC
(%)
70
10
handbook, halfpage
PL
(W)
8
60
6
ηC
6
50
4
4
40
2
30
0
0
2
4
6
8
PL (W)
2
20
10
0
0
0.5
1.0
1.5
CW, class-B operation; f = 470 MHz; VCE = 7.5 V;
tuned at PL = 7 W; Tmb ≤ 60 °C.
CW, class-B operation; f = 470 MHz; VCE = 7.5 V;
tuned at PL = 7 W; Tmb ≤ 60 °C.
Fig.7
Fig.8
Power gain and collector efficiency as
functions of load power; typical values.
MBK252
20
2.0
PIN (W)
Load power as a function of input power;
typical values.
MBK253
16
handbook, halfpage
handbook, halfpage
Gp
(dB)
Gp
(dB)
16
12
12
8
8
4
4
0
100
150
200
250
0
400
300
f (MHz)
420
440
460
480
f (MHz)
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
Fig.9
Fig.10 Power gain as a function of frequency;
typical values.
Power gain as a function of frequency;
typical values.
1998 Jan 28
6
Philips Semiconductors
Product specification
UHF power transistor
BLT52
MBK254
4
MBK255
6
handbook, halfpage
handbook, halfpage
Zi
(Ω)
ZL
(Ω)
2
ri
RL
4
0
XL
2
−2
xi
0
−4
−6
100
150
200
250
−2
100
300
f (MHz)
150
200
250
300
f (MHz)
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
Fig.11 Input impedance as a function of frequency
(series components); typical values.
Fig.12 Load impedance as a function of frequency
(series components); typical values.
MGD260
MGD261
1.2
4
handbook, halfpage
handbook, halfpage
ZL
(Ω)
Zi
(Ω)
ri
RL
3
0.8
xi
2
0.4
1
XL
0
400
420
440
460
0
400
480
f (MHz)
420
440
460
f (MHz)
480
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
CW, class-B operation; VCE = 7.5 V; PL = 7 W; Tmb ≤ 60 °C.
Fig.13 Input impedance as a function of frequency
(series components); typical values.
Fig.14 Load impedance as a function of frequency
(series components); typical values.
1998 Jan 28
7
Philips Semiconductors
Product specification
UHF power transistor
BLT52
MOUNTING RECOMMENDATIONS
Both the metallized groundplate and leads contribute to the heatflow. It is recommended that the transistor is mounted
on a grounded metallized area of a maximum thickness of 0.8 mm on the printed-circuit board, equipped with at least 12
(0.5 mm diameter) through metallized holes filled with solder.
A thermal resistance Rth(mb-h) of 5 K/W can be achieved if heatsink compound is applied when the transistor is mounted
on the printed-circuit board.
full pagewidth
1.87 (2×)
0.60 (4×)
0.80 (2×)
0.50 (12×)
7.38 3.60
1.00 (8×)
1.00 (9×)
4.60
MGK390
Dimensions in mm.
Fig.15 Reflow soldering footprint for SOT409A.
1998 Jan 28
8
Philips Semiconductors
Product specification
UHF power transistor
BLT52
PACKAGE OUTLINE
Ceramic surface mounted package; 8 leads
SOT409A
D
A
D2
B
c
w2 B
H1
L
E2
H
E
A
e
α
w1
b
Q1
0
2.5
5 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D2
E
E2
e
H
H1
L
Q1
w1
w2
α
mm
2.36
2.06
0.58
0.43
0.23
0.18
5.94
5.03
5.16
5.00
4.93
4.01
4.14
3.99
1.27
7.47
7.26
4.39
4.24
1.02
0.51
0.10
0.00
0.25
0.25
7°
0°
inches
0.093
0.081
0.023
0.017
0.009
0.007
0.234
0.198
0.203
0.197
0.194
0.158
0.163
0.157
0.050
0.294
0.286
0.173
0.167
0.040
0.020
0.004
0.000
0.010
0.010
7°
0°
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-06-28
SOT409A
1998 Jan 28
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
UHF power transistor
BLT52
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jan 28
10
Philips Semiconductors
Product specification
UHF power transistor
BLT52
NOTES
1998 Jan 28
11
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA57
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125108/00/03/pp12
Date of release: 1998 Jan 28
Document order number:
9397 750 03238
Similar pages