WINNERJOIN MMBT8050LT1 Npn epitaxial silicon transistor Datasheet

RoHS
MMBT8050LT1
NPN EPITAXIAL SILICON TRANSISTOR
SOT-23
D
T
,. L
O
3
2W OUTPUT AMPLIFIER OF PORTABLE
RADIOS IN CLASS
1
B PUSH-PULL OPERATION
2
1.
0.95
0.95
2.9
1.9
2.4
1.3
Symbol
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
V CBO
V CEO
R
T
V EBO
Emitter-Base Voltage
Ic
Collector Current
o
PD
Collector Dissipation Ta=25 C*
C
E
L
Junction Temperature
Storage Temperature
Electrical Characteristics
Characteristic
IC
N
ABSOLUTE MAXIMUM RATINGS
O
Symbol
o
Unit
40
V
25
V
6
V
500
mA
225
mW
150
O
-55-150
O
o
Test Conditions
Collector-Base Breakdown Voltage
BV CBO
40
V
I C =100uA I E =0
Collector-Emitter Breakdown Voltage#
BV CEO
25
V
I C =1mA I B =0
Emitter-Base Breakdown Voltage
BV EBO
6
V
I E =100uA I C =0
100
nA
V CB =35V, I E =0
100
nA
V EB =6V, I C =0
J
E
E
I CBO
Emitter Cutoff Current
I EBO
DC Current Gain
h FE1
45
DC Current Gain
h FE2
85
DC Current Gain
h FE3
30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
W
C
C
(Ta=25 C)
MIN. TYP. MAX. Unit
Collector Cutoff Current
Unit:mm
(Ta=25 C)
Rating
Tj
T stg
C
1.BASE
2.EMITTER
3.COLLECTOR
0.4
Complement to MMPT8550LT1
Collector Current:Ic=500mA
o
Collector Dissipation:Pc=225mW (Tc=25 C)
V CE =1V, I C =5mA
160
300
V CE(sat)
0.28
0.5
V
I C =500mA, I B =50mA
V BE(sat)
0.98
1.2
V
I C =500mA, I B =50mA
1
V
I CE =1V, I C =10mA
PF
V CB =10V, I E =0,f=1MHz
V CE =1V, I C =500mA
Base-Emitter Voltage
V BE
0.66
Output Capacitance
C ob
9
Current Gain-Bandwidth Product
fT
100
V CE =1V, I C =50mA
190
MHz V CE =10V, I C =50mA
o
*Total Device Dissipation:FR=1X0.75X0.062 in Board ,Derate 25 C
# Pulse Test: Pulse Width 300uS ,Duty cycle
2%
MMBT8050LT1=A6
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
RoHS
MMBT8050LT1
V CEBAT -COLLECTORMEMITTER VOLTAGE(V)
300
Vc E =1V
。
125 C
250
200
。
25 C
150
100
。
-40 C
50
1
10
100
1000
I C -COLLECTOR CURRENT(mA)
C
E
L
Base-Emitter Saturation
Voltage vs Collector Current
1.2
=10
1
0.8
。
-40 C
J
E
0.6
0.4
10
R
T
E
。
25 C
。
125 C
100
1000
I C -COLLECTOR CURRENT(mA)
D
T
,. L
O
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
=10
0.3
0.2
IC
0.1
C
N
0
10
。
125 C
。
25 C
。
-40 C
100
1000
I C -COLLECTOR CURRENT(mA)
O
FT(MHz),GAIN BANDWIDTH PRODUCT(MHz)
Typical Pulsed Current Gain
vs Collector Current
V CEBAT -BASE EMITTER VOLTAGE(V)
h FE -TYPICAL PU;SECD CURRENT GAIN
Typical Characteristics
Gain Bandnith Product
vs Collector Current
1000
Vc E =10V
800
600
400
200
0
1
10
20
50
100
I C -COLLECTOR CURRENT(mA)
W
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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