MOTOROLA MJF47 Npn silicon power transistor 1 ampere 250 volts 28 watt Datasheet

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SEMICONDUCTOR TECHNICAL DATA
Isolated Package Applications
NPN SILICON
POWER TRANSISTOR
1 AMPERE
250 VOLTS
28 WATTS
Designed for line operated audio output amplifiers, switching power supply drivers
and other switching applications, where the mounting surface of the device is required
to be electrically isolated from the heatsink or chassis.
•
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Electrically Similar to the Popular TIP47
250 VCEO(sus)
1 A Rated Collector Current
No Isolating Washers Required
Reduced System Cost
UL Recognized, File #E69369, to 3500 VRMS Isolation
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CASE 221D–02
TO–220 TYPE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
250
Vdc
Collector–Base Voltage
VCB
350
Vdc
Emitter–Base Voltage
VEB
5
Vdc
VISOL
4500
3500
1500
VRMS
Collector Current — Continuous
Peak
IC
1
2
Adc
Base Current
IB
0.6
Adc
Total Power Dissipation* @ TC = 25_C
Derate above 25_C
PD
28
0.23
Watts
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2
0.016
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RθJA
62.5
_C/W
Thermal Resistance, Junction to Case*
RθJC
4.4
_C/W
TL
260
_C
Collector–Emitter Voltage
RMS Isolation Voltage (1)
(for 1 sec, R.H. < 30%,
TA = 25_C)
Test No. 1 Per Fig. 10
Test No. 2 Per Fig. 11
Test No. 3 Per Fig. 12
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Lead Temperature for Soldering Purpose
* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJF47
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v
v
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
250
—
Vdc
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
ICEO
—
0.2
mAdc
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0)
ICES
—
0.1
mAdc
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
—
1
mAdc
30
10
150
—
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1 Adc, VCE = 10 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VCE(sat)
—
1
Vdc
Base–Emitter On Voltage
(IC = 1 Adc, VCE = 10 Vdc)
VBE(on)
—
1.5
Vdc
fT
10
—
MHz
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 0.2 Adc, VCE 10 Vdc, f = 2 MHz)
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
TYPICAL CHARACTERISTICS
200
1.4
VCE = 10 V
1.2
60
40
TJ = 150°C
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
100
25°C
20
– 55°C
10
6
4
2
0.02
VBE(sat) @ IC/IB = 5
0.8
0.6
VBE(on) @ VCE = 4 V
0.4
TJ = 25°C
0.2
0.04 0.06 0.1
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain
2
1
1
2
VCE(sat) @ IC/IB = 5 V
0
0.02
0.04 0.06
0.1
0.2
0.4 0.6
IC, COLLECTOR CURRENT (AMPS)
1
Figure 2. “On” Voltages
Motorola Bipolar Power Transistor Device Data
2
MJF47
1
5
0.5
TJ = 25°C
VCC = 200 V
IC/IB = 5
tr
2
t, TIME ( µs)
t, TIME ( µs)
0.2
td
0.1
TJ = 25°C
VCC = 200 V
IC/IB = 5
ts
0.05
1
0.5
tf
0.2
0.1
0.02
0.01
0.02
0.05
1
0.2
0.5
0.1
IC, COLLECTOR CURRENT (AMPS)
0.05
0.02
2
0.05
Figure 3. Turn–On Time
0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)
1
2
Figure 4. Turn–Off Time
TURN–ON PULSE
APPROX
+11 V
VCC
RC
SCOPE
Vin
Vin 0
VEB(off)
51
t1
Cjd << Ceb
t3
APPROX
+11 V
RB
–4 V
t1 ≤ 7 ns
100 < t2 < 500 µs
t3 < 15 ns
Vin
t2
TURN–OFF PULSE
DUTY CYCLE ≈ 2%
APPROX – 9 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 5. Switching Time Equivalent Circuit
1
0.5
0.3
0.2
0.1
SINGLE PULSE
RθJC(t) = r(t) RθJC
RθJC = 4.4°C/W MAX
TJ(pk) – TC = P(pk) RθJC(t)
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
t, TIME (msec)
100
200 300
500
1K
2K
3K
5K
10 K
Figure 6. Thermal Response
Motorola Bipolar Power Transistor Device Data
3
IC, COLLECTOR CURRENT (AMPS)
MJF47
3
2
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150°C. T J(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 µs
500 µs
1
1 ms
0.5
dc
0.3
0.2
v
CURRENT LIMIT
THERMAL LIMIT @ TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.1
0.05
0.03
10
100
20
30
50
200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
300
4
40
30
20
10
0
0
50
100
150
200
PD(AV), AVERAGE POWER DISSIPATION (WATTS)
PD(AV), AVERAGE POWER DISSIPATION (WATTS)
Figure 7. Maximum Forward Bias Safe
Operating Area
2
1.5
1
0.5
0
0
50
100
150
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 8. Power Derating
Figure 9. Power Derating
Motorola Bipolar Power Transistor Device Data
200
MJF47
TEST CONDITIONS FOR ISOLATION TESTS*
CLIP
MOUNTED
FULLY ISOLATED
PACKAGE
CLIP
LEADS
HEATSINK
MOUNTED
FULLY ISOLATED
PACKAGE
MOUNTED
FULLY ISOLATED
PACKAGE
0.107” MIN
LEADS
0.107” MIN
LEADS
HEATSINK
HEATSINK
0.110” MIN
Figure 10. Clip Mounting Position
for Isolation Test Number 1
Figure 11. Clip Mounting Position
for Isolation Test Number 2
Figure 12. Screw Mounting Position
for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4–40 SCREW
CLIP
PLAIN WASHER
HEATSINK
COMPRESSION WASHER
HEATSINK
NUT
Figure 13. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw
torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions.
Destructive laboratory tests show that using a hex head 4–40 screw, without washers, and applying a torque in excess of 20 in . lbs will
cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability.
Additional tests on slotted 4–40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10
in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
Motorola Bipolar Power Transistor Device Data
5
MJF47
PACKAGE DIMENSIONS
SEATING
PLANE
–T–
–B–
F
C
S
Q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
U
A
1 2 3
H
–Y–
K
G
N
L
D
J
R
3 PL
0.25 (0.010)
M
B
M
Y
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
INCHES
MIN
MAX
0.621
0.629
0.394
0.402
0.181
0.189
0.026
0.034
0.121
0.129
0.100 BSC
0.123
0.129
0.018
0.025
0.500
0.562
0.045
0.060
0.200 BSC
0.126
0.134
0.107
0.111
0.096
0.104
0.259
0.267
MILLIMETERS
MIN
MAX
15.78
15.97
10.01
10.21
4.60
4.80
0.67
0.86
3.08
3.27
2.54 BSC
3.13
3.27
0.46
0.64
12.70
14.27
1.14
1.52
5.08 BSC
3.21
3.40
2.72
2.81
2.44
2.64
6.58
6.78
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 221D–02
TO–220 TYPE
ISSUE D
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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6
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Motorola Bipolar Power Transistor Device Data
*MJF47/D*
MJF47/D
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