Seme LAB IRF9530-220M P-channel power mosfet for hi.rel application Datasheet

IRF9530-220M
MECHANICAL DATA
Dimensions in mm (inches)
4.70
5.00
0.70
0.90
3.56
Dia.
3.81
VDSS
ID(cont)
RDS(on)
10.41
10.92
13.39
13.64
10.41
10.67
16.38
16.89
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
12.70
19.05
1 2 3
-100V
-9.3A
0.31W
FEATURES
0.89
1.14
2.54
BSC
2.65
2.75
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• SIMPLE DRIVE REQUIREMENTS
TO–220M – Metal Package
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
• LIGHTWEIGHT
• SCREENING OPTIONS AVAILABLE
• ALL LEADS ISOLATED FROM CASE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current @ Tcase = 25°C
-9.3A
ID
Continuous Drain Current @ Tcase = 100°C
-5.8A
IDM
Pulsed Drain Current
-37A
PD
Power Dissipation @ Tcase = 25°C
45W
Linear Derating Factor
0.36W/°C
TJ , Tstg
Operating and Storage Temperature Range
–55 to 150°C
RqJC
Thermal Resistance Junction to Case
2.8°C/W max.
RqJA
Thermal Resistance Junction to Ambient
80°C/W max.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/00
IRF9530-220M
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Parameter
BVDSS
Test Conditions
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
RDS(on)
VGS = 0
ID = 1mA
Min.
Typ.
Max.
-100
Reference to 25°C
V
-0.1
ID = 1mA
V / °C
Static Drain – Source On–State
VGS = 10V
ID = -5.8A
0.31
Resistance
VGS = 10V
ID = -9.3A
0.36
VDS = VGS
ID = 250mA
-2
VDS ³ 15V
IDS = -5.8A
2.5
VGS = 0
VGS(th) Gate Threshold Voltage
V
(W)
S(W
VDS = 0.8BVDSS
-25
TJ = 125°C
-250
mA
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
-100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 0
800
Coss
Output Capacitance
VDS = 25V
350
Crss
Reverse Transfer Capacitance
f = 1MHz
125
Qg
Total Gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain (“Miller”) Charge
td(on)
Turn–On Delay Time
tr
Rise Time
td(off)
Turn–Off Delay Time
tf
Fall Time
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
-9.3
ISM
Pulse Source Current
-37
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
IS = -9.3A
Qrr
Reverse Recovery Charge
di / dt £ 100A/ms VDD £ 50V
LD
PACKAGE CHARACTERISTICS
Internal Drain Inductance
LS
Internal Source Inductance
Semelab plc.
ID = -9.3A
nA
pF
nC
14.7
30
ID = -9.3A
1
7.1
VDS = 0.5BVDSS
2
21
VDS = 0.5BVDSS
nC
60
VDD = -50V
140
ID = -9.3A
140
RG = 7.5W
IS = -9.3A
W
-4
gfs
VGS = 10V
Unit
ns
140
TJ = 25°C
VGS = 0
TJ = 25°C
(from 6mm down drain lead pad to centre of die)
8.7
(from 6mm down source lead to centre of source bond pad)
8.7
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
A
-4.7
V
250
ns
3
mC
nH
Prelim. 7/00
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