HUASHAN H5342 Npn silicon transistor Datasheet

N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
H5342
█ APPLICATIONS
Medium power amplifier.
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
T stg ——Storage Temperature………………………… -55~150℃
TO-92
Tj——Juncttion Temperature…………………………………150℃
PC——Collector Dissipation…………………………………625mW
VCBO——Collector-Base Voltage………………………………40V
1―Emitter,E
2―Collector,C
3―Base,B
VCEO——Collector-Emitter Voltage……………………………32V
V EB O ——Emitter-Base Voltage………………………………5V
IC——Collector Current………………………………………500mA
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
40
V
IC=100μA,IE=0
BVCEO
Collector-Emitter Breakdown Voltage
32
V
IC=1mA,IB=0
BVEBO
Emitter- Base Breakdown Voltage
5
V
IE=10μA,IC=0
ICBO
Collector Cut-off Current
0.1
μA
VCB=40V, IE=0
IEBO
Emitter Cut-off Current
0.1
μA
VEB=5V, IC=0
HFE
DC Current Gain
70
240
VCE(sat) Collector- Emitter Saturation Voltage
VCE=1V, IC=100mA
0.25
V
fT
Current Gain-Bandwidth Product
300
MHz
Cob
Output Capacacitance
7.0
pF
█ hFE Classification
O
Y
70—140
120—240
IC=100mA, IB=10mA
VCE=6V, IE=-20mA
VCB=6V,IE=0,f=1MHz
Shantou Huashan Electronic Devices Co.,Ltd.
H5342
Similar pages