ISC BD245B Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BD245/A/B/C
DESCRIPTION
·Collector Current -IC= 10A
·Collector-Emitter Breakdown Voltage: V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A
80V(Min)- BD245B; 100V(Min)- BD245C
·Complement to Type BD246/A/B/C
APPLICATIONS
·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCER
VCEO
VEBO
PARAMETER
Collector-Emitter
Voltage (RBE= 100Ω)
Collector-Emitter
Voltage
VALUE
BD245
55
BD245A
70
BD245B
90
BD245C
115
BD245
45
BD245A
60
BD245B
80
BD245C
100
UNIT
V
V
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current
3
A
PC
Collector Power Dissipation
@ Ta=25℃
Collector Power Dissipation
@ TC=25℃
B
TJ
Tstg
Junction Temperature
Storage Temperature Range
3
W
80
150
℃
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.56
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BD245/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD245
V(BR)CEO
Collector-Emitter
Breakdown Voltage
MIN
TYP.
MAX
UNIT
45
BD245A
60
IC= 30mA ;IB=0
V
B
BD245B
80
BD245C
100
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
1.0
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2.5A
4.0
V
VBE(on)-1
Base-Emitter On Voltage
IC= 3A ; VCE= 4V
1.6
V
VBE(on)-2
Base-Emitter On Voltage
IC= 10A ; VCE= 4V
3.0
V
0.4
mA
0.7
mA
1.0
mA
ICES
ICEO
Collector
Cutoff Current
Collector
Cutoff Current
B
BD245
VCE= 55V; VBE= 0
BD245A
VCE= 70V; VBE= 0
BD245B
VCE= 90V; VBE= 0
BD245C
VCE= 115V; VBE= 0
BD245/A
VCE= 30V;IB= 0
BD245B/C
VCE= 60V;IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 1A ; VCE= 4V
40
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
20
hFE-3
DC Current Gain
IC= 10A ; VCE= 4V
4
Current-Gain—Bandwidth Product
IC= 0.5A ;VCE= 10V,ftest= 1.0MHz
fT
3.0
MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
isc Website:www.iscsemi.cn
IC= 1A; IB1= -IB2= 0.1A;
RL=20Ω; VBE(OFF)= -3.7V
2
0.2
μs
0.8
μs
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Website:www.iscsemi.cn
isc Product Specification
BD245/A/B/C
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