GeneSiC DB101G Silicon bridge rectifier Datasheet

DB101G thru DB104G
Single Phase Glass Passivated
Silicon Bridge Rectifier
VRRM = 50 V - 400 V
IO = 1 A
Features
• Ideal for printed circuit board
• Reliable low cost construction utilizing molded
plastic technique
DB Package
• High surge current capability
• Small size, simple installation
• Types from 50 V up to 400 V VRRM
• Not ESD Sensitive
Mechanical Data
Case: Molded plastic
Terminals: Plated terminals, solderable per MIL-STD202, Method 208
Polarity: Polarrity symbols marked on the body
Mounting position: Any
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
S
Symbol
C diti
Conditions
DB101G
G
DB102G
G
DB103G
DB104G
Unit
Repetitive peak reverse voltage
VRRM
50
100
200
400
V
RMS reverse voltage
VRMS
35
70
140
280
V
DC blocking voltage
Operating temperature
Storage temperature
VDC
Tj
Tstg
50
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
400
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Symbol
Conditions
DB101G
DB102G
DB103G
DB104G
Unit
Maximum average forward
rectified current
IO
Ta = 40 °C
1.0
1.0
1.0
1.0
A
Peak forward surge current
IFSM
tp = 8.3 ms, half sine
30
30
30
30
A
Maximum instantaneous
forward voltage drop
VF
IF = 1.0 A
1.1
1.1
1.1
1.1
V
Maximum DC reverse current at
rated DC blocking voltage
IR
Ta = 25 °C
5
5
5
5
Ta = 125 °C
Typical junction capacitance
Cj
500
25
500
25
500
25
500
25
RΘJC
20
20
20
20
Typical thermal resistance
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1
μA
pF
°C/W
DB101G thru DB104G
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2
DB101G thru DB104G
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
Di
Dimensions
i
iin iinches
h and
d ((millimeters)
illi t )
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