LIGITEK LMD6711-2ASE-XX Dot matrix led display(1.2inch) Datasheet

LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
DOT MATRIX LED DISPLAY(1.2Inch)
LMD6711/2ASE-XX
DATA SHEET
DOC. NO
:
QW0905- LMD6711/2ASE-XX
REV.
:
D
DATE
: 20 - Jan. - 2006
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD6711/2ASE-XX
Page 1/7
Package Dimensions
23.75(0.935)
LMD6711/2ASE-XX
LIGITEK
20(0.787")
7.0(0.276")
PIN NO.1
27.0
(1.063")
34.0
(1.339")
2.54X6
=15.24
(0.6")
3.25
(0.128")
2.75(0.108")
ψ0.45
TYP
3.8±0.5
15.24(0.6")
Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted.
2.Specifications are subject to change without notice.
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Property of Ligitek Only
Page 2/7
PART NO. LMD6711/2ASE-XX
Internal Circuit Diagram
LMD6711ASE-XX
COLUMN
1
2
3
4
5
ROW PIN
8
9
10
11
12
1
1
2
2
3
3
4
4
5
5
6
6
7
7
LMD6712ASE-XX
COLUMN
ROW
PIN
1
1
2
2
3
3
4
4
5
5
6
6
7
7
1
2
3
4
5
8
9
10
11
12
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 3/7
PART NO. LMD6711/2ASE-XX
Electrical Connection
PIN NO.
LMD6711ASE-XX
PIN NO.
LMD6712ASE-XX
1.
Anode Row 1
1.
Cathode Row 1
2.
Anode Row 2
2.
Cathode Row 2
3.
Anode Row 3
3.
Cathode Row 3
4.
Anode Row 4
4.
Cathode Row 4
5.
Anode Row 5
5.
Cathode Row 5
6.
Anode Row 6
6.
Cathode Row 6
7.
Anode Row 7
7.
Cathode Row 7
8.
Cathode Column 8
8.
Anode Column 8
9.
Cathode Column 9
9.
Anode Column 9
10.
Cathode Column 10
10.
Anode Column 10
11.
Cathode Column 11
11.
Anode Column 11
12.
Cathode Column 12
12.
Anode Column 12
13.
Nc
13.
Nc
14.
No Pin
14.
No Pin
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD6711/2ASE-XX
Page 4/7
Absolute Maximum Ratings at Ta=25 ℃
Ratings
Parameter
Symbol
UNIT
SE
Forward Current Per Chip
IF
20
mA
Peak Forward Current Per
Chip (Duty 1/10,0.1ms
Pulse Width)
IFP
80
mA
Power Dissipation Per Chip
PD
80
mW
Ir
10
μA
Operating Temperature
Topr
-25 ~ +85
℃
Storage Temperature
Tstg
-25 ~ +85
℃
Reverse Current Per Any Chip
Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃
Part Selection And Application Information(Ratings at 25℃)
common
cathode
or
anode
Material Emitted
CHIP
PART NO
△λ
Vf(v)
(nm)
Iv(mcd)
IV-M
Min. Typ. Max. Min. Typ.
Common
Cathode
LMD6711ASE-XX
GaAsP/GaP Orange
LMD6712ASE-XX
Electrical
λP
(nm)
610
45
1.7
2.1
Common
Anode
Note : 1.The forward voltage data did not including ± 0.1V testing tolerance.
2. The luminous intensity data did not including ±15% testing tolerance.
2.6
2.35
4.0
2:1
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD6711/2ASE-XX
Page 5/7
Test Condition For Each Parameter
Symbol
Unit
Test Condition
Forward Voltage Per Chip
Vf
volt
If=20mA
Luminous Intensity Per Chip
Iv
mcd
If=10mA
Peak Wavelength
λp
nm
If=20mA
△λ
nm
If=20mA
Ir
μA
Vr=5V
Parameter
Spectral Line Half-Width
Reverse Current Any Chip
Luminous Intensity Matching Ratio
IV-M
器具規格
1. 素子規格
(1) 表示素子
(2) 表示色
(3) 輝度
(4) 壽命
(5) 光亮度
2. 表示器規格
(1) 輝度
(2) 光亮度
----LED
----橘紅色
----250cd ( 周圍照度 0 Lux 時)
---- 輝度半減期 50.000 Hr
----無規定 (1dot 內光亮平均 )
---- 表示器內及同一 LOT內之表示器 ,輝度無規定 .
( 鄰接 DOT 之輝度差 50% 以下)
----無規定
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
PART NO. LMD6711/2ASE-XX
Page6/7
Typical Electro-Optical Characteristics Curve
SE CHIP
Fig.1 Forward current vs. Forward Voltage
Fig.2 Relative Intensity vs. Forward Current
3.0
Relative Intensity
Normalize @20mA
Forward Current(mA)
1000
100
10
1.0
0.1
2.5
2.0
1.5
1.0
0.5
0.0
2.0
1.0
3.0
4.0
5.0
1.0
10
Fig.3 Forward Voltage vs. Temperature
Fig.4 Relative Intensity vs. Temperature
3.0
Relative Intensity@20mA
Normalize @25℃
1.2
Forward Voltage@20mA
Normalize @25℃
1000
Forward Current(mA)
Forward Voltage(V)
1.1
1.0
0.9
0.8
-40
-20
0
20
40
60
80
100
Fig.5 Relative Intensity vs. Wavelength
1.0
0.5
0.0
550
600
650
Wavelength (nm)
700
2.5
2.0
1.5
1.0
0.5
0.0
-40
-20
0
20
40
60
80
Ambient Temperature( ℃)
Ambient Temperature( ℃)
Relative Intensity@20mA
100
750
100
LIGITEK ELECTRONICS CO.,LTD.
Property of Ligitek Only
Page 7/7
PART NO. LMD6711/2ASE-XX
Reliability Test:
Test Item
Test Condition
Description
Reference
Standard
Operating Life Test
1.Under Room Temperature
2.If=10mA
3.t=1000 hrs (-24hrs, +72hrs)
This test is conducted for the purpose
of detemining the resistance of a part
in electrical and themal stressed.
MIL-STD-750: 1026
MIL-STD-883: 1005
JIS C 7021: B-1
High Temperature
Storage Test
1.Ta=105 ℃±5 ℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance of
the device which is laid under condition
of high temperature for hours.
MIL-STD-883:1008
JIS C 7021: B-10
Low Temperature
Storage Test
1.Ta=-40 ℃±5℃
2.t=1000 hrs (-24hrs, +72hrs)
The purpose of this is the resistance
of the device which is laid under
condition of low temperature for hours.
High Temperature
High Humidity Test
1.Ta=65 ℃±5℃
2.RH=90 %~95 %
3.t=240hrs ±2hrs
The purpose of this test is the resistance
of the device under tropical for hours.
1.Ta=105 ℃±5℃&-40 ℃±5℃
(10min) (10min)
2.total 10 cycles
The purpose of this is the resistance of
the device to sudden extreme changes
in high and low temperature.
MIL-STD-202: 107D
MIL-STD-750: 1051
MIL-STD-883: 1011
Solder Resistance
Test
1.T.Sol=260 ℃±5℃
2.Dwell time= 10 ±1sec.
This test intended to determine the
thermal characteristic resistance
of the device to sudden exposures
at extreme changes in temperature
when soldering the lead wire.
MIL-STD-202: 210A
MIL-STD-750: 2031
JIS C 7021: A-1
Solderability Test
1.T.Sol=230 ℃±5℃
2.Dwell time=5 ±1sec
This test intended to see soldering well
performed or not.
MIL-STD-202: 208D
MIL-STD-750: 2026
MIL-STD-883: 2003
JIS C 7021: A-2
Thermal Shock Test
JIS C 7021: B-12
MIL-STD-202:103B
JIS C 7021: B-11
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