VISHAY BA783S-V

BA782S-V, BA783S-V
Vishay Semiconductors
Band Switching Diodes
FEATURES
• These diodes are also available in SOD-123
case with the type designations BA782-V and
BA783-V
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
20145
DESCRIPTION
Silicon epitaxial planar diode switches
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
REMARKS
BA782S-V
BA782S-V-GS18 or BA782S-V-GS08
R2
Tape and reel
BA783S-V
BA783S-V-GS18 or BA783S-V-GS08
R3
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITIONS
VR
35
UNIT
V
Forward continuous current
IF
100
mA
SYMBOL
VALUE
UNIT
Tj
125
°C
Tstg
- 55 to + 150
°C
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
VR = 20 V
IR
50
nA
f = 1 MHz, VR = 1 V
CD1
1.5
pF
BA782S-V
CD2
1.25
pF
BA783S-V
CD2
1.2
pF
BA782S-V
rf1
0.7
Ω
BA783S-V
rf1
1.2
Ω
BA782S-V
rf2
0.5
Ω
Diode capacitance
f = 1 MHz, VR = 3 V
f = (50 to 1000) MHz, IF = 3 mA
Dynamic forward resistance
f = (50 to 1000) MHz, IF = 10 mA
Series inductance across case
Document Number: 85709
Rev. 1.6, 05-Aug-10
BA783S-V
rf2
LS
0.9
2.5
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Ω
nH
www.vishay.com
1
BA782S-V, BA783S-V
Band Switching Diodes
Vishay Semiconductors
TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified
1.8
rf - Dynamic Forward Resistance (Ω)
CD - Diode Capacitance (pF)
2.0
Tj = 25 °C
f = 1 MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18798
1
10
Tamb = 25 °C
BA783S-V
100 MHz
1
BA782S-V
100 MHz
0.1
100
10
1
20330
VR - Reverse Voltage (V)
Fig. 1 - Diode Capacitance
BA782S-V, BA783S-V
1 kHz
10
100
IF - Forward Current (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
0.1 (0.004) max.
0° to 8
°
0.15 (0.006)
0.10 (0.004)
0.2 (0.008)
0.8 (0.031)
1.15 (0.045)
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
2.50 (0.098)
1.1 (0.043)
2.85 (0.112)
1.5 (0.059)
0.40 (0.016)
0.20 (0.008)
Cathode bar
Foot print recommendation:
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
Document Number: 85709
Rev. 1.6, 05-Aug-10
1.6 (0.063)
0.6 (0.024)
0.6 (0.024)
0.6 (0.024)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
2
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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