Seme LAB IRFN054SMD N-channel power mosfet Datasheet

IRFN054SMD
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
VDSS
ID(cont)
RDS(on)
3 .6 0 (0 .1 4 2 )
M a x .
3
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
1
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
0 .7 6
(0 .0 3 0 )
m in .
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
2
60V
45A
0.027W
FEATURES
• HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
• SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
• SIMPLE DRIVE REQUIREMENTS
• LIGHTWEIGHT
• HIGH PACKING DENSITIES
SMD1
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Note: IRFxxxSM also available with
pins 1 and 3 reversed.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VGS
Gate – Source Voltage
±20V
ID
Continuous Drain Current
(VGS = 0 , Tcase = 25°C)
45A
ID
Continuous Drain Current
(VGS = 0 , Tcase = 100°C)
28A
IDM
Pulsed Drain Current 1
180A
PD
Power Dissipation @ Tcase = 25°C
100W
Linear Derating Factor
0.8W/°C
2
EAS
Single Pulse Avalanche Energy
dv/dt
Peak Diode Recovery 3
TJ , Tstg
Operating and Storage Temperature Range
TL
Package Mounting Surface Temperature (for 5 sec)
RqJC
RqJ–PCB
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
480mJ
4.5V/ns
–55 to 150°C
300°C
1.25°C/W
3°C/W
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) @ VDD = 25V , L ³ 0.3mH , RG = 25W , Peak IL = 45A , Starting TJ = 25°C
3) @ ISD £ 45A , di/dt £ 200A/ms , VDD £ BVDSS , TJ £ 125°C , SUGGESTED RG = 2.35W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/00
IRFN054SMD
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
BVDSS
Test Conditions
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
DBVDSS Temperature Coefficient of
DTJ Breakdown Voltage
RDS(on)
ID = 1mA
VGS(th) Gate Threshold Voltage
1
Max.
V / °C
VGS = 10V
ID = 28A
0.027
VGS = 10V
ID = 45A
0.031
VDS = VGS
ID = 250mA
2
VDS ³ 15V
IDS = 28A
20
VGS = 0
V
(W)
S(W
VDS = 0.8BVDSS
25
TJ = 125°C
250
mA
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
Forward Gate – Source Leakage
VGS = 20V
100
IGSS
Reverse Gate – Source Leakage
VGS = –20V
–100
Ciss
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 0
4600
Coss
Output Capacitance
VDS = 25V
2000
Crss
Reverse Transfer Capacitance
f = 1MHz
340
Qg
Total Gate Charge 1
Qgs
Gate – Source Charge 1
ID = 45A
180
ID = 45A
20
45
VDS = 0.5BVDSS
34
105
Qgd
Gate – Drain (“Miller”) Charge
td(on)
Turn–On Delay Time
tr
Rise Time
td(off)
Turn–Off Delay Time
tf
Fall Time
IS
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
nC
nC
33
VDD = 30V
180
ID = 45A
100
RG = 2.35W
ns
100
45
2
ISM
Pulse Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
IF = 45A
Qrr
Reverse Recovery Charge
di / dt £ 100A/ms VDD £ 50V
ton
Forward Turn–On Time
LD
PACKAGE CHARACTERISTICS
Internal Drain Inductance (from centre of drain pad to die)
0.8
LS
Internal Source Inductance (from centre of source pad to end of source bond wire)
2.8
180
IS = 45A
nA
pF
80
VDS = 0.5BVDSS
1
W
4
gfs
VGS = 10V
Unit
V
0.68
ID = 1mA
1
Typ.
60
Reference to 25°C
Static Drain – Source On–State
Resistance
VGS = 0
Min.
TJ = 25°C
VGS = 0
TJ = 25°C
A
2.5
V
280
ns
2.2
mC
Negligible
nH
Notes
1) Pulse Test: Pulse Width £ 300ms, d £ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Prelim. 7/00
Similar pages