Diodes MMDT3906-7-F Dual pnp small signal surface mount transistor Datasheet

MMDT3906
DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
A
C2
•
•
•
•
•
•
•
E2
B2
C1
H
Case: SOT-363
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Ordering and Date Code Information: See Page 4
Marking Information: K3N, See Page 4
Weight: 0.006 grams (approximate)
Maximum Ratings
E1
B C
Mechanical Data
•
•
SOT-363
B1
K
M
J
D
C2
B1
F
L
E1
Dim
Min
Max
A
0.10
0.30
B
1.15
1.35
C
2.00
2.20
D
0.65 Nominal
F
0.30
0.40
H
1.80
2.20
J
—
0.10
K
0.90
1.00
L
0.25
0.40
M
0.10
0.25
α
0°
8°
All Dimensions in mm
E2
B2
C1
@TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5.0
V
IC
-200
mA
Pd
200
mW
RθJA
625
°C/W
Tj, TSTG
-55 to +150
°C
Collector Current - Continuous
Power Dissipation
(Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30124 Rev. 11 - 2
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MMDT3906
© Diodes Incorporated
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Symbol
Min
Max
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
-40
⎯
V
IC = -10μA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
-40
⎯
V
IC = -1.0mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0
⎯
V
IE = -10μA, IC = 0
ICEX
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
IBL
⎯
-50
nA
VCE = -30V, VEB(OFF) = -3.0V
hFE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = -100µA, VCE = -1.0V
IC = -1.0mA, VCE = -1.0V
IC = -10mA, VCE = -1.0V
IC = -50mA, VCE = -1.0V
IC = -100mA, VCE = -1.0V
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
-0.25
-0.40
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Base-Emitter Saturation Voltage
VBE(SAT)
-0.65
⎯
-0.85
-0.95
V
IC = -10mA, IB = -1.0mA
IC = -50mA, IB = -5.0mA
Output Capacitance
Cobo
⎯
4.5
pF
VCB = -5.0V, f = 1.0MHz, IE = 0
Input Capacitance
Cibo
⎯
10
pF
VEB = -0.5V, f = 1.0MHz, IC = 0
Input Impedance
hie
2.0
12
kΩ
Voltage Feedback Ratio
hre
0.1
10
x 10
Small Signal Current Gain
hfe
100
400
⎯
Output Admittance
hoe
3.0
60
μS
Current Gain-Bandwidth Product
fT
250
⎯
MHz
VCE = -20V, IC = -10mA,
f = 100MHz
Noise Figure
NF
⎯
4.0
dB
VCE = -5.0V, IC = -100μA,
RS = 1.0kΩ, f = 1.0kHz
Delay Time
td
⎯
35
ns
Rise Time
tr
⎯
35
ns
Storage Time
ts
⎯
225
ns
Fall Time
tf
⎯
75
ns
Collector Cutoff Current
Base Cutoff Current
Test Condition
ON CHARACTERISTICS (Note 5)
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
-4
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Notes:
VCC = -3.0V, IC = -10mA,
VBE(off) = 0.5V, IB1 = -1.0mA
VCC = -3.0V, IC = -10mA,
IB1 = IB2 = -1.0mA
5. Short duration pulse test used to minimize self-heating effect.
DS30124 Rev. 11 - 2
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MMDT3906
© Diodes Incorporated
100
CIBO, INPUT CAPACITANCE (pF)
COBO, OUTPUT CAPACITANCE (pF)
PD, POWER DISSIPATION (mW)
200
150
100
50
0
0
25
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature
1
0.1
200
1
100
10
VCB, COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
10
VCE(SAT), COLLECTOR-EMITTER (V)
SATURATION VOLTAGE
1,000
hFE, DC CURRENT GAIN
10
100
10
1
0.1
100
10
1
IC, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain vs.
Collector Current
1
0.1
0.01
1,000
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 4, Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(SAT), BASE-EMITTER (V)
SATURATION VOLTAGE
1.0
0.9
0.8
0.7
0.6
IC
IB= 10
0.5
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 5, Typical Base-Emitter
Saturation Voltage vs. Collector Current
DS30124 Rev. 11 - 2
100
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MMDT3906
© Diodes Incorporated
Ordering Information
Notes:
6.
(Note 6)
Device
Packaging
Shipping
MMDT3906-7-F
SOT-363
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3N = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K3N YM
K3N YM
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
2001
M
Mar
3
2002
N
Apr
4
2003
P
May
5
2004
R
2005
S
Jun
6
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS30124 Rev. 11 - 2
4 of 4
www.diodes.com
MMDT3906
© Diodes Incorporated
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