IXYS IXFR26N50Q Hiperfet power mosfets isoplus247 (electrically isolated back surface) Datasheet

HiPerFETTM Power MOSFETs
IXFR 26N50Q
ISOPLUS247TM
IXFR 24N50Q
(Electrically Isolated Back Surface)
VDSS
ID25
500 V
24 A
500 V
22 A
trr ≤ 250 ns
RDS(on)
0.20 Ω
0.23 Ω
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
IDM
TC = 25°C, Pulse width limited by TJM
IAR
TC = 25°C
24
22
104
96
26
24
A
A
A
A
A
A
30
1.5
mJ
J
5
V/ns
250
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
2500
V~
5
g
EAR
EAS
TC = 25°C
TC = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
26N50Q
24N50Q
26N50Q
24N50Q
26N50Q
24N50Q
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
VISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
Weight
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250uA
500
2.5
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
RDS(on)
VGS = 10 V, ID = IT
Notes 1 & 2
26N50Q
24N50Q
© 2001 IXYS All rights reserved
V
4.5
V
±100
nA
25
1
µA
mA
0.20
0.23
Ω
Ω
ISOPLUS 247TM
E153432
G
G = Gate
S = Source
Isolated back surface*
D
D = Drain
* Patent pending
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<35pF)
l
Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Unclamped Inductive Switching (UIS)
rated
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly: no screws, or isolation
foils required
l
Space savings
l
High power density
l
Low collector capacitance to ground
(low EMI)
98664A (5/01)
IXFR 24N50Q
IXFR 26N50Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 15 V; ID = IT
Note 1
14
24
S
3900
pF
500
pF
Crss
130
pF
td(on)
28
ns
30
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
td(off)
RG = 1 Ω (External),
55
ns
tf
16
ns
Qg(on)
95
nC
27
nC
40
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
0.50
RthJC
Source-Drain Diode
Test Conditions
IS
VGS = 0 V
ISM
Repetitive; pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
IF = Is, -di/dt = 100 A/µs,
VR = 100 V
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
t rr
QRM
IRM
K/W
0.15
RthCK
ISOPLUS 247 OUTLINE
TJ = 25°C
TJ = 25°C
TJ = 25°C
0.85
8
26
A
104
A
1.3
V
250
1.5
ns
µC
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXFR26N50Q
IT = 13A
2. IT test current:
IXFR24N50Q
IT = 12A
3. See IXFH26N50Q data sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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