PHILIPS BLF2022-30 Uhf power ldmos transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D750
BLF2022-30
UHF power LDMOS transistor
Product specification
Supersedes data of 2002 Dec 19
2003 Feb 24
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
FEATURES
PINNING - SOT608A
• Typical W-CDMA performance at a supply voltage of
28 V and IDQ of 240 mA:
PIN
– Output power = 3.5 W (AV)
– Gain = 12.9 dB
DESCRIPTION
1
drain
2
gate
3
source, connected to flange
– Efficiency = 16.5%
– ACPR = −45 dBc at 3.84 MHz
– dim = −42 dBc
• Easy power control
• Excellent ruggedness
• High power gain
1
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.
3
2
Top view
APPLICATIONS
MBL290
• RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
Fig.1 Simplified outline (SOT608A).
DESCRIPTION
30 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
Typical RF performance at Th = 25 °C in a common source test circuit.
MODE OF OPERATION
2-tone, class-AB
two-carrier W-CDMA test
model 1, 64 channels
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
ACLR5
(dBc)
f1 = 2170; f2 = 2170.1
28
240
30 (PEP)
12.6
34.3
−29.5
−
f1 = 2155; f2 = 2165
28
270
3.5 (AV)
12.9
16.5
−42
−45
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Feb 24
2
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−
±15
V
ID
DC drain current
−
4.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-h
PARAMETER
CONDITIONS
thermal resistance from junction to heatsink Th = 25 °C; note 1
VALUE
UNIT
1.85
K/W
Notes
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.7 mA
65
−
−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 70 mA
4.5
−
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS = 28 V
−
−
5
µA
IDSX
on-state drain current
VGS = VGSth + 9 V; VDS = 10 V
9
−
−
A
IGSS
gate leakage current
VGS = ±15 V; VDS = 0
−
−
11
nA
gfs
forward transconductance
VDS = 10 V; ID = 2.5 A
−
2
−
S
RDSon
drain-source on-state resistance
VGS = VGSth + 9 V; ID = 2.5 A
−
0.3
−
Ω
Crs
feedback capacitance
VGS = 0; VDS = 28 V; f = 1 MHz
−
1.7
−
pF
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-c = 1.85 K/W; unless otherwise specified.
MODE OF OPERATION
2-tone, class-AB
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
f1 = 2170; f2 = 2170.1
28
240
30 (PEP)
>11
>30
≤−25
Ruggedness in class-AB operation
The BLF2022-30 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 28 V; IDQ = 240 mA; PL = 30 W; f = 2170 MHz.
2003 Feb 24
3
Philips Semiconductors
Product specification
UHF power LDMOS transistor
MLD935
15
handbook, halfpage
BLF2022-30
Gp
Gp
MLD936
60
0
handbook, halfpage
dim
(dBc)
ηD
(dB)
(%)
−20
d3
40
10
ηD
d5
−40
d7
20
5
−60
−80
0
0
0
10
20
30
40
50
PL (PEP) (W)
VDS = 28 V; IDQ = 240 mA; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Fig.2
MLD937
15
handbook, halfpage
(1)
(2)
(dB)
10
20
30
40
50
PL (PEP) (W)
VDS = 28 V; IDQ = 240 mA; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
Gp
Gp
0
Fig.3
MLD938
60
0
handbook, halfpage
dim
(dBc)
ηD
(%)
(3)
Intermodulation distortion as a function of
peak envelope load power; typical values.
−20
10
ηD
40
(4)
(1)
(5)
(6)
(2)
−40
(3)
20
5
−60
−80
0
0
0
10
20
30
40
50
PL (PEP) (W)
VDS = 28 V; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
(1) IDQ = 290 mA.
(2) IDQ = 240 mA.
Fig.4
(3) IDQ = 190 mA.
(4) IDQ = 190 mA.
10
20
30
40
50
PL (PEP) (W)
VDS = 28 V; Th ≤ 25 °C;
f1 = 2170 MHz; f2 = 2170.1 MHz.
(5) IDQ = 240 mA.
(6) IDQ = 290 mA.
(1) IDQ = 190 mA.
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
2003 Feb 24
0
Fig.5
4
(2) IDQ = 240 mA.
(3) IDQ = 290 mA.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
MLD940
15
handbook, halfpage
Gp
Gp
BLF2022-30
30
ηD
(%)
(dB)
10
MLD941
0
handbook, halfpage
dim
(dBc)
20
−20
10
−40
0
ACLR
(dBc)
−20
ηD
5
dim
−40
ACLR
0
0
2
4
6
−60
0
8
10
PL (AV) (W)
0
Fig.7
Power gain and drain efficiency as functions
of average load power; typical values.
2003 Feb 24
4
6
−60
10
PL (AV) (W)
8
Two-carrier W-CDMA performance.
VDS = 28 V; IDQ = 270 mA; Th ≤ 25 °C; f1 = 2155 MHz;
f1 = 2165 MHz;.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Two-carrier W-CDMA performance.
VDS = 28 V; IDQ = 270 mA; Th ≤ 25 °C; f1 = 2170 MHz.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Fig.6
2
5
Intermodulation distortion and adjacent
channel leakage ratio (ACLR) as functions
of average load power; typical values.
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
MLD942
12
MLD943
8
handbook, halfpage
handbook, halfpage
zi
ZL
(Ω)
(Ω)
ri
RL
4
8
0
4
xi
−4
XL
−8
0
2
2.05
2.1
2.15
2.2
2.1
2.05
2
2.2
2.15
f (GHz)
f (GHz)
VDS = 28 V; ID = 240 mA; PL = 30 W; Th ≤ 25 °C.
VDS = 28 V; ID = 240 mA; PL = 30 W; Th ≤ 25 °C.
Fig.8
Fig.9
Input impedance as a function of frequency
(series components); typical values.
Load impedance as a function of frequency
(series components); typical values.
L1
handbook, full pagewidth
VDD
C8
C7
L11
C6
C13
C17
C14
C19
C20
Vgate
R1
input
50 Ω
C3
L6
L2
C11
L3
C4
C1
L4 L5
L7
L8
C5
L9
C9
L10
output
50 Ω
C10 C12
C2
L12
Fig.10 Class-AB test circuit.
2003 Feb 24
6
C16
C18
C15
MLD944
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
List of components (See Figs 10 and 11)
COMPONENT
C1, C2, C9, C10
DESCRIPTION
Tekelec variable capacitor
VALUE
DIMENSIONS
CATALOGUE NO.
0.6 to 4.5 pF
C3, C4, C11, C12 multilayer ceramic chip capacitor; 6.8 pF
note 1
C5
multilayer ceramic chip capacitor; 2.2 pF
note 1
C6, C7, C13,
C14, C15, C16
multilayer ceramic chip capacitor; 12 pF
note 1
C8
tantalum capacitor
10 µF
C17, C18
multilayer ceramic chip capacitor
4.7 µF
C19
multilayer ceramic chip capacitor; 1 nF
note 2
C20
electrolytic capacitor
L1
handmade
L2
stripline; note 3
50 Ω
12 × 2.4 mm
L3
stripline; note 3
43 Ω
18 × 3 mm
L4
stripline; note 3
29 Ω
4 × 5 mm
L5
stripline; note 3
10 Ω
5 × 18.4 mm
L6
stripline; note 3
56 Ω
34.4 × 2 mm
L7
stripline; note 3
9Ω
10 × 20 mm
L8
stripline; note 3
29 Ω
4 × 5 mm
L9
stripline; note 3
41 Ω
20 × 3.2 mm
L10
stripline; note 3
50 Ω
5 × 2.4 mm
L11, L12
stripline; note 3
17 Ω
24.5 × 10 mm
TDK C4532X7R1H475M
100 µF; 63 V
2 loops, dia. 4 mm
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. American Technical Ceramics type 100B or capacitor of same quality.
3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm.
2003 Feb 24
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
40
handbook, full pagewidth
40
60
BLF2022-30 testjig input
BLF2022-30 testjig output
C13
C17
C14
L1
C8
R1
C6 C7
C20
C19
C3
C4
C11
C12
C5
C1
C9
C2
C10
C15
C18
C16
BLF2022-30 testjig output
BLF2022-30 testjig input
MLD945
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
Fig.11 Component layout for 2.17 GHz class-AB test circuit.
2003 Feb 24
8
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 2 leads
SOT608A
D
A
F
3
D1
U1
B
q
c
C
1
H
E1
p
U2
E
w1 M A M B M
2
A
w2 M C M
b
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
4.62
3.76
7.24
6.99
0.15
0.10
10.21 10.29
10.01 10.03
inches
0.182
0.148
0.285 0.006
0.275 0.004
0.402 0.405
0.394 0.395
OUTLINE
VERSION
D
D1
F
H
p
Q
q
U1
U2
w1
w2
10.21 10.29
10.01 10.03
1.14
0.89
15.75
14.73
3.30
2.92
1.70
1.35
15.24
20.45
20.19
9.91
9.65
0.25
0.51
0.402 0.405
0.394 0.395
0.045 0.620
0.035 0.580
0.130
0.115
0.067
0.600
0.053
0.805
0.795
0.390
0.010 0.020
0.380
E
E1
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-02-22
02-02-11
SOT608A
2003 Feb 24
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Feb 24
10
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
NOTES
2003 Feb 24
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Printed in The Netherlands
613524/03/pp12
Date of release: 2003
Feb 24
Document order number:
9397 750 10921
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