ON MCR12DCM Silicon controlled rectifiers reverse blocking thyristor Datasheet

MCR12DCM, MCR12DCN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
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Features
•
•
•
•
•
•
SCRs
12 AMPERES RMS
600 − 800 VOLTS
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
Pb−Free Packages are Available
G
A
K
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz,
Gate Open)
MCR12DCM
MCR12DCN
VDRM,
VRRM
On−State RMS Current
(180° Conduction Angles; TC = 90°C)
IT(RMS)
Average On−State Current
(180° Conduction Angles; TC = 90°C)
Value
Unit
1 2
V
3
12
A
DPAK
CASE 369C
STYLE 4
IT(AV)
7.8
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
ITSM
100
A
Circuit Fusing Consideration (t = 8.3 msec)
I2t
41
A2sec
PGM
5.0
W
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 sec, TC = 90°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
−40 to 125
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Forward Peak Gate Power
(Pulse Width ≤ 1.0 sec, TC = 90°C)
Forward Average Gate Power
(t = 8.3 msec, TC = 90°C)
600
800
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM for all types can be applied on a continuous basis. Ratings apply for zero
or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested
with a constant current source such that the voltage ratings of the device are
exceeded.
MARKING DIAGRAM
YWW
R1
2DCxG
Y
WW
R12DCx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1
Publication Order Number:
MCR12DCM/D
MCR12DCM, MCR12DCN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
Max
Unit
RJC
RJA
RJA
2.2
88
80
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
−
−
−
−
0.01
5.0
−
1.3
1.9
2.0
−
7.0
−
20
40
0.5
−
0.65
−
1.0
2.0
0.2
−
−
4.0
−
22
−
40
80
4.0
−
22
−
40
80
50
200
−
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 4) (ITM = 20 A)
Gate Trigger Current (Continuous dc)
(VD = 12 V, RL = 100 )
Gate Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 )
Gate Non−Trigger Voltage
(VD = 12 V, RL = 100 )
Holding Current
(VD = 12 V, Initiating Current = 200 mA, Gate Open)
VTM
IGT
TJ = 25°C
TJ = *40°C
mA
VGT
TJ = 25°C
TJ = *40°C
VGD
V
V
V
TJ = 125°C
IH
TJ = 25°C
TJ = −40°C
Latching Current
(VD = 12 V, IG = 20 mA, TJ = 25°C)
(VD = 12 V, IG = 40 mA, TJ = −40°C)
mA
IL
mA
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
V/s
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
3. 1/8″ from case for 10 seconds.
4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
ORDERING INFORMATION
Device
MCR12DCMT4
MCR12DCMT4G
MCR12DCNT4
MCR12DCNT4G
Package
Shipping†
DPAK
2500 / Tape and Reel
DPAK
(Pb−Free)
2500 / Tape and Reel
DPAK
2500 / Tape and Reel
DPAK
(Pb−Free)
2500 / Tape and Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MCR12DCM, MCR12DCN
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off−State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off−State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On−State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
Anode −
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
125
120
115
110
105
100
= Conduction
Angle
95
90
= 30°
85
0
1.0
2.0
60°
3.0
4.0
90°
5.0
120°
6.0
180°
7.0
180°
14
120°
90°
12
60°
dc
= Conduction
Angle
10
8.0
= 30°
6.0
4.0
2.0
0
8.0
0
1.0
2.0
4.0
3.0
5.0
6.0
7.0
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. On−State Power Dissipation
100
8.0
1.0
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 125°C
r(t) , TRANSIENT RESISTANCE
(NORMALIZED)
I T, INSTANTANEOUS ON−STATE CURRENT (AMPS)
dc
16
10
MAXIMUM @ TJ = 25°C
1.0
0.1
0.1
ZJC(t) = RJC(t)Sr(t)
0.01
0
1.0
2.0
3.0
5.0
4.0
0.1
1.0
10
100
1000
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On−State Characteristics
Figure 4. Transient Thermal Response
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3
10 K
MCR12DCM, MCR12DCN
0.9
VGT, GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT (mA)
100
10
1.0
−40 −25 −10
0.7
0.6
0.5
0.4
0.3
0.2
5.0
20
35
50
65
80
95
−40 −25 −10
110 125
5.0
20
35
50
65
80
95
110 125
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
100
IL, LATCHING CURRENT (mA)
100
10
1.0
−40 −25 −10
5.0
20
35
50
65
80
95
110
10
1.0
−40 −25 −10
125
5.0
20
35
50
65
80
95
110
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
1000
VD = 800 V
TJ = 125°C
STATIC dv/dt (V/ s)
IH , HOLDING CURRENT (mA)
0.8
100
10
1000
100
RGK, GATE−CATHODE RESISTANCE (OHMS)
Figure 9. Exponential Static dv/dt versus
Gate−Cathode Resistance
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4
10 K
125
MCR12DCM, MCR12DCN
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE O
−T−
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
T
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MCR12DCM/D
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