AOSMD AO7408 20v n-channel mosfet Datasheet

AO7408
20V N-Channel MOSFET
General Description
Product Summary
The AO7408 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with
gate voltages as low as 1.8V. This device is suitable for
use as a load switch or in PWM applications.
ID (at VGS=10V)
20V
2A
Top View
VDS
RDS(ON) (at VGS=4.5V)
< 62mΩ
RDS(ON) (at VGS=2.5V)
< 75mΩ
RDS(ON) (at VGS=1.8V)
< 85mΩ
SC-70-6
(SOT-323)
Bottom View
D
Top View
D
D
G
6
D
2
5
D
3
4
S
1
G
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev 3: July 2010
Steady-State
Steady-State
A
16
W
0.22
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
V
0.35
PD
TA=70°C
±8
1.5
IDM
TA=25°C
Units
V
2
ID
TA=70°C
Maximum
20
RθJA
RθJL
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Typ
300
340
280
°C
Max
360
425
320
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO7408
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Min
Conditions
ID=250µA, VGS=0V
Typ
Max
20
V
VDS=20V, VGS=0V
1
TJ=55°C
µA
5
VDS=0V, VGS=±8V
±100
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
16
VGS=4.5V, ID=2A
Units
0.7
1
nA
V
A
50
62
70
90
VGS=2.5V, ID=1.8A
56
75
mΩ
VGS=1.8V, ID=1A
66
85
mΩ
Forward Transconductance
VDS=5V, ID=2A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
RDS(ON)
gFS
Static Drain-Source On-Resistance
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
260
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
VGS=4.5V, VDS=10V, ID=2A
mΩ
S
1
V
0.35
A
320
pF
48
pF
27
pF
3
4.5
Ω
2.9
4
nC
Qgs
Gate Source Charge
0.4
nC
Qgd
tD(on)
Gate Drain Charge
0.6
nC
Turn-On DelayTime
2.5
tr
Turn-On Rise Time
ns
3.2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=2A, dI/dt=100A/µs
14
Qrr
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs
3.8
VGS=10V, VDS=10V, RL=5Ω,
RGEN=3Ω
21
ns
3
ns
19
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: July 2010
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Page 2 of 5
AO7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
20
VDS=5V
4.5V
20
16
2.5V
15
ID(A)
ID (A)
12
2V
8
10
125°C
5
4
VGS=1.5V
0
0
0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
120
Normalized On-Resistance
1.6
100
RDS(ON) (mΩ
Ω)
25°C
VGS=1.8V
80
VGS=2.5V
60
VGS=4.5V
40
0
2
VGS=2.5V
ID=1.8A
1.4
VGS=1.8V
17
ID=1A 5
1.2
2
10
VGS=4.5V
ID=2A
1
0.8
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
120
1.0E+01
ID=2A
1.0E+00
40
100
80
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
125°
125°
1.0E-02
25°
1.0E-03
60
1.0E-04
25°
1.0E-05
40
0
4
6
8
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3: July 2010
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AO7408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
400
VDS=10V
ID=2A
350
4
Ciss
Capacitance (pF)
VGS (Volts)
300
3
2
250
200
150
Coss
100
1
50
0
Crss
0
0
1
1
2
2
3
3
Qg (nC)
Figure 7: Gate-Charge Characteristics
4
0
5
10
15
VDS (Volts)
Figure 8: Capacitance Characteristics
20
1000
100.0
TA=25°C
ID (Amps)
10µs
100µs
RDS(ON)
limited
1.0
1ms
Power (W)
100
10.0
10
10ms
0.1
TJ(Max)=150°C
TA=25°C
1
10s
DC
0.1
0.0
0.00001
0.01
0.1
1
VDS (Volts)
10
Zθ JA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
100
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=425°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: July 2010
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Page 4 of 5
AO7408
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 3: July 2010
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5
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