Cypress CY7C1383B-83BZI 512 ã 36/1m ã 18 flow-thru sram Datasheet

381B
CY7C1381B
CY7C1383B
512 × 36/1M × 18 Flow-Thru SRAM
Features
•
•
•
•
•
•
•
•
•
•
•
Fast access times: 7.5, 8.5, 10.0 ns
Fast clock speed: 117, 100, 83 MHz
Provide high-performance 3-1-1-1 access rate
Optimal for depth expansion
3.3V (–5% / +10%) power supply
Common data inputs and data outputs
Byte Write Enable and Global Write control
Chip enable for address pipeline
Address, data and control registers
Internally self-timed Write Cycle
Burst control pins (interleaved or linear burst
sequence)
• Automatic power down available using ZZ mode or CE
deselect
• High-density, high-speed packages
• JTAG boundary scan for BGA packaging version
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low power CMOS designs using advanced
single-layer polysilicon, triple-layer metal technology. Each
memory cell consists of six transistors.
The CY7C1381B and CY7C1383B SRAMs integrate
524,288 × 36 and 1,048,576 × 18 SRAM cells with advanced
synchronous peripheral circuitry and a 2-bit counter for
internal burst operation. All synchronous inputs are gated by
registers controlled by a positive-edge-triggered clock input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining Chip Enable (CE), Burst Control
Inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb,
BWc, BWd, and BWe), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and
Burst Mode Control (MODE). The data outputs (Q), enabled
by OE, are also asynchronous.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or address status controller
(ADSC) input pins. Subsequent burst addresses can be internally generated as controlled by the Burst Advance Pin (ADV).
Address, data inputs, and Write controls are registered on-chip
to initiate self-timed Write cycle. Write cycles can be one to
four bytes wide as controlled by the Write control inputs.
Individual byte Write allows individual byte to be written. BWa
controls DQ1-DQ8 and DP1. BWb controls DQ9-DQ16 and
DP2. BWc controls DQ17-DQ24and DP3. BWd controls
DQ25-DQ32 and DP4. BWa, BWb BWc, and BWd can be
active only with BWe being LOW. GW being LOW causes all
bytes to be written. Write pass-through capability allows
written data available at the output for the immediately next
Read cycle. This device also incorporates pipelined enable
circuit for easy depth expansion without penalizing system
performance.
All inputs and outputs of the CY7C1381B and the CY7C1383B
are JEDEC-standard JESD8-5-compatible.
Selection Guide
117 MHz
100 MHz
83 MHz
Unit
Maximum Access Time
7.5
8.5
10.0
ns
Maximum Operating Current
250
225
185
mA
Maximum CMOS Standby Current
20
20
20
mA
Cypress Semiconductor Corporation
Document #: 38-05196 Rev. **
•
3901 North First Street
•
San Jose
•
CA 95134 • 408-943-2600
Revised December 3, 2001
CY7C1381B
CY7C1383B
Functional Block Diagram
Logic Block Diagram ×18
MODE
(A0,A1) 2
BURST Q0
CE COUNTER
Q1
CLR
CLK
ADV
ADSC
ADSP
A[19:0]
GW
Q
20
18
ADDRESS
CE REGISTER
D
18
20
1M × 18
MEMORY
ARRAY
D DQb[15:8],DP1Q
BYTEWRITE
REGISTERS
BWE
BWS b
D DQa[7:0],DP0 Q
BYTEWRITE
REGISTERS
BWS a
18
CE1
CE2
CE3
18
D
ENABLE Q
CE REGISTER
CLK
INPUT
REGISTERS
CLK
OE
ZZ
SLEEP
CONTROL
DQ[15:0]
DP[1:0]
Logic Block Diagram ×36
MODE
(A0,A1) 2
BURST Q0
CE COUNTER
Q1
CLR
CLK
ADV
ADSC
ADSP
A[18:0]
GW
Q
19
BWE
BWS d
17
ADDRESS
CE REGISTER
D
Q
D DQd[31:24],DP3
BYTEWRITE
REGISTERS
BWS c
D DQc[23:16],DP2Q
BYTEWRITE
REGISTERS
BWS b
D DQb[15:8],DP1Q
BYTEWRITE
REGISTERS
BWSa
CE1
CE2
CE3
D DQa[7:0],DP0Q
BYTEWRITE
REGISTERS
17
19
512K × 36
MEMORY
ARRAY
36
36
D
ENABLE Q
CE REGISTER
CLK
INPUT
REGISTERS
CLK
OE
ZZ
SLEEP
CONTROL
DQ[31:0]
DP[3:0]
Document #: 38-05196 Rev. **
Page 2 of 31
CY7C1381B
CY7C1383B
Pin Configurations
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE1
CE2
BWd
BWc
BWb
BWa
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE1
CE2
NC
NC
BWb
BWa
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-pin TQFP
NC
NC
NC
VDDQ
VSSQ
NC
NC
DQb
DQb
VSSQ
VDDQ
DQb
DQb
NC
VDD
NC
VSS
DQb
DQb
VDDQ
VSSQ
DQb
DQb
DPb
NC
VSSQ
VDDQ
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
CY7C1383B
(1M × 18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DPb
DQb
DQb
VDDQ
VSSQ
DQb
DQb
DQb
DQb
VSSQ
VDDQ
DQb
DQb
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSSQ
DQa
DQa
DQa
DQa
VSSQ
VDDQ
DQa
DQa
DPa
MODE
A
A
A
A
A1
A0
NC
NC
VSS
VDD
A
A
A
A
A
A
A
A
A
CY7C1381B
(512K × 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
MODE
A
A
A
A
A1
A0
NC
NC
VSS
VDD
A
A
A
A
A
A
A
A
A
DPc
DQc
DQc
VDDQ
VSSQ
DQc
DQc
DQc
DQc
VSSQ
VDDQ
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSSQ
DQd
DQd
DQd
DQd
VSSQ
VDDQ
DQd
DQd
DPd
Document #: 38-05196 Rev. **
A
NC
NC
VDDQ
VSSQ
NC
DPa
DQa
DQa
VSSQ
VDDQ
DQa
DQa
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSSQ
DQa
DQa
NC
NC
VSSQ
VDDQ
NC
NC
NC
Page 3 of 31
CY7C1381B
CY7C1383B
Pin Configurations (continued)
119-ball BGA
CY7C1381B (512K × 36)
1
2
A
VDDQ
A
3
A
B
NC
A
A
C
NC
A
A
D
DQc
DQPc
E
DQc
DQc
4
5
A
6
A
7
VDDQ
ADSC
VDD
A
A
NC
A
A
NC
VSS
NC
VSS
DQPb
DQb
VSS
CE1
VSS
DQb
DQb
ADSP
F
VDDQ
DQc
VSS
OE
VSS
DQb
VDDQ
G
H
J
DQc
DQc
VDDQ
DQc
DQc
VDD
BWc
VSS
NC
ADV
BWb
VSS
NC
DQb
DQb
VDD
DQb
DQb
VDDQ
K
L
M
DQd
DQd
VDDQ
DQd
DQd
DQd
VSS
VSS
BWd
VSS
CLK
NC
DQa
DQa
VDDQ
N
DQd
DQd
VSS
BWE
A1
DQa
DQa
DQa
VSS
DQa
DQa
P
DQd
DQPd
VSS
A0
VSS
DQPa
DQa
R
NC
VDD
NC
A
NC
NC
A
64M
MODE
T
A
A
A
32M
ZZ
U
VDDQ
TMS
TDI
TCK
TDO
NC
VDDQ
GW
VDD
BWa
VSS
CY7C1383B (1M × 18)
1
2
3
4
5
6
7
A
VDDQ
A
A
ADSP
A
A
VDDQ
B
NC
A
A
A
NC
NC
A
A
ADSC
VDD
A
C
A
A
NC
D
DQb
NC
VSS
NC
VSS
DQPa
NC
E
NC
DQb
VSS
CE1
VSS
NC
DQa
F
VDDQ
NC
VSS
OE
VSS
DQa
VDDQ
G
H
J
NC
DQb
VDDQ
DQb
NC
VDD
BWb
VSS
NC
ADV
VSS
VSS
NC
NC
DQb
VDD
DQa
NC
VDDQ
K
L
NC
DQb
DQb
NC
VSS
VSS
CLK
NC
VSS
NC
DQa
DQa
NC
M
VDDQ
DQb
VSS
NC
VDDQ
N
DQb
NC
VSS
BWE
A1
VSS
DQa
NC
P
NC
DQPb
VSS
A0
VSS
NC
DQa
R
NC
A
MODE
VDD
NC
A
NC
T
U
64M
VDDQ
A
TMS
A
TDI
32M
TCK
A
TDO
A
NC
ZZ
VDDQ
Document #: 38-05196 Rev. **
GW
VDD
BWa
VSS
Page 4 of 31
CY7C1381B
CY7C1383B
Pin Configurations (continued)
165-ball Bump FBGA
CY7C1381B (512K × 36) – 11 × 15 FBGA
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CE1
BWc
BWb
CE3
BWE
ADSC
ADV
A
NC
B
C
D
E
F
G
H
J
K
L
M
N
P
NC
DPc
A
NC
CE2
VDDQ
BWd
VSS
BWa
VSS
CLK
VSS
GW
VSS
OE
VSS
ADSP
VDDQ
A
NC
128M
DPb
DQb
R
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
DQc
DQc
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQb
DQb
NC
DQd
VSS
DQd
NC
VDDQ
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
NC
VDDQ
NC
DQa
ZZ
DQa
DQd
DQd
DQd
DQd
VDDQ
VDDQ
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDDQ
VDDQ
DQa
DQa
DQa
DQa
DQd
DQd
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
DQa
DPd
NC
VDDQ
VSS
NC
A
NC
VSS
VDDQ
NC
DPa
NC
64M
A
A
TDI
A1
TDO
A
A
A
A
MODE
32M
A
A
TMS
A0
TCK
A
A
A
A
11
CY7C1383B (1M × 18) – 11 × 15 FBGA
1
2
3
4
5
6
7
8
9
10
A
NC
A
CE1
BWb
NC
CE3
BWE
ADSC
ADV
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC
NC
A
NC
CE2
VDDQ
NC
VSS
BWa
VSS
CLK
VSS
GW
VSS
OE
VSS
ADSP
VDDQ
A
NC
128M
DPa
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
NC
DQb
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
NC
DQa
NC
DQb
VSS
NC
NC
VDDQ
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
NC
VDDQ
NC
DQa
ZZ
NC
DQb
DQb
NC
NC
VDDQ
VDDQ
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDDQ
VDDQ
DQa
DQa
NC
NC
DQb
NC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQa
NC
DPb
NC
VDDQ
VSS
NC
A
NC
VSS
VDDQ
NC
NC
NC
64M
A
A
TDI
A1
TDO
A
A
A
A
MODE
32M
A
A
TMS
A0
TCK
A
A
A
A
R
Document #: 38-05196 Rev. **
Page 5 of 31
CY7C1381B
CY7C1383B
Pin Definitions
Name
I/O
Description
A0
A1
A
InputSynchronous
Address inputs used to select one of the address locations. Sampled at
the rising edge of the CLK if ADSP or ADSC is active LOW, and CE1, CE2,
and CE3 are sampled active. A[1:0] feed the two-bit counter.
BWa
BWb
BWc
BWd
InputSynchronous
Byte Write Select inputs, active LOW. Qualified with BWE to conduct byte
writes to the SRAM. Sampled on the rising edge of CLK.
GW
InputSynchronous
Global Write Enable input, active LOW. When asserted LOW on the rising
edge of CLK, a global Write is conducted (ALL bytes are written, regardless
of the values on BWa,b,c,d and BWE).
BWE
InputSynchronous
Byte Write Enable input, active LOW. Sampled on the rising edge of CLK.
This signal must be asserted LOW to conduct a byte Write.
CLK
Input-Clock
Clock input. Used to capture all synchronous inputs to the device. Also used
to increment the burst counter when ADV is asserted LOW, during a burst
operation.
CE1
InputSynchronous
Chip Enable 1 input, active LOW. Sampled on the rising edge of CLK. Used
in conjunction with CE2 and CE3 to select/deselect the device. ADSP is
ignored if CE1 is HIGH.
CE2
InputSynchronous
Chip Enable 2 input, active HIGH. Sampled on the rising edge of CLK. Used
in conjunction with CE1 and CE3 to select/deselect the device (TQFP only).
CE3
InputSynchronous
Chip Enable 3 input, active LOW. Sampled on the rising edge of CLK. Used
in conjunction with CE1 and CE2 to select/deselect the device (TQFP only) .
OE
InputAsynchronous
Output Enable, asynchronous input, active LOW. Controls the direction of
the I/O pins. When LOW, the I/O pins behave as outputs. When deasserted
HIGH, I/O pins are three-stated, and act as input data pins. OE is masked
during the first clock of a Read cycle when emerging from a deselected state.
ADV
InputSynchronous
Advance input signal, sampled on the rising edge of CLK. When asserted,
it automatically increments the address in a burst cycle.
ADSP
InputSynchronous
Address Strobe from Processor, sampled on the rising edge of CLK.
When asserted LOW, A is captured in the address registers. A[1:0] are also
loaded into the burst counter. When ADSP and ADSC are both asserted, only
ADSP is recognized. ASDP is ignored when CE1 is deasserted HIGH.
ADSC
InputSynchronous
Address Strobe from Controller, sampled on the rising edge of CLK.
When asserted LOW, A[x:0] is captured in the address registers. A[1:0] are also
loaded into the burst counter. When ADSP and ADSC are both asserted, only
ADSP is recognized.
MODE
InputStatic
Selects burst order. When tied to GND selects linear burst sequence. When
tied to VDDQ or left floating selects interleaved burst sequence. This is a strap
pin and should remain static during device operation.
ZZ
InputAsynchronous
ZZ “sleep” input. This active HIGH input places the device in a
non-time-critical “sleep” condition with data integrity preserved.
DQa, DPa
DQb, DPb
DQc, DPc
DQd, DPd
I/OSynchronous
Bidirectional data I/O lines. As inputs, they feed into an on-chip data register
that is triggered by the rising edge of CLK. As outputs, they deliver the data
contained in the memory location specified by A[X]during the previous clock
rise of the Read cycle. The direction of the pins is controlled by OE. When OE
is asserted LOW, the pins behave as outputs. When HIGH, DQa–DQd and
DPa–DPd are placed in a three-state condition. DQ a,b,c and d are eight-bits
wide. DP a,b,c and d are one-bit wide.
TDO
JTAG serial output
Synchronous
Serial data-out to the JTAG circuit. Delivers data on the negative edge of
TCK (BGA only).
TDI
JTAG serial input
Synchronous
Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK (BGA
only).
Document #: 38-05196 Rev. **
Page 6 of 31
CY7C1381B
CY7C1383B
Pin Definitions (continued)
Name
I/O
Description
TMS
Test Mode Select
Synchronous
This pin controls the Test Access Port (TAP) state machine. Sampled on the
rising edge of TCK (BGA only).
TCK
JTAG Serial Clock
Serial clock to the JTAG circuit (BGA only).
VDD
Power Supply
VSS
Ground
VDDQ
I/O Power Supply
VSSQ
I/O Ground
Power supply inputs to the core of the device. Should be connected to 3.3V
–5% +10% power supply.
Ground for the core of the device. Should be connected to ground of the
system.
Power supply for the I/O circuitry.
Ground for the I/O circuitry. Should be connected to ground of the system.
NC
–
No connects. Pins are not internally connected.
32M
64M
128M
–
No connects. Reserved for address expansion. Pins are not internally
connected.
Document #: 38-05196 Rev. **
Page 7 of 31
CY7C1381B
CY7C1383B
Functional Description
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW,
and (2) Chip Enable (CE1, CE2, CE3 on TQFP, CE1 on BGA)
is asserted active, and (3) the Write signals (GW, BWE) are all
deasserted HIGH. ADSP is ignored if CE1 is HIGH. The
address presented to the address inputs is stored into the
address advancement logic and the Address Register while
being presented to the memory core. If the OE input is
asserted LOW, the requested data will be available at the data
outputs a maximum to tCDV after clock rise. ADSP is ignored if
CE1 is HIGH.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions
are satisfied at clock rise: (1) ADSP is asserted LOW, and
(2) Chip Enable is asserted active. The address presented is
loaded into the address register and the address
advancement logic while being delivered to the RAM core. The
Write signals (GW, BWE, and BWx) and ADV inputs are
ignored during this first clock cycle. If the Write inputs are
asserted active (see Write Cycle Descriptions table on page
10 for appropriate states that indicate a Write) on the next
clock rise, the appropriate data will be latched and written into
the device. The CY7C1381B/CY7C1383B provides byte Write
capability that is described in the Write Cycle Description
table. Asserting the Byte Write Enable (BWE) input with the
selected Byte Write (BWa,b,c,d for CY7C1381B and BWa,b for
CY7C1383B) input will selectively Write to only the desired
bytes. Bytes not selected during a byte Write operation will
remain unaltered. All I/Os are three-stated during a byte Write.
Because the CY7C1381B/CY7C1383B is a common I/O
device, the OE must be deasserted HIGH before presenting
data to the DQx inputs. Doing so will three-state the output
drivers. As a safety precaution, DQx are automatically
three-stated whenever a Write cycle is detected, regardless of
the state of OE.
Single Write Accesses Initiated by ADSC
ADSC Write accesses are initiated when the following conditions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) Chip Enable (CE1, CE2, CE3 on TQFP,
CE1 on BGA) is asserted active, and (4) the appropriate
combination of the Write inputs (GW, BWE, and BWx) is
asserted active to conduct a Write to the desired byte(s).
ADSC is ignored if ADSP is active LOW.
The address presented to A[17:0] is loaded into the address
register and the address advancement logic while being
delivered to the RAM core. The ADV input is ignored during
this cycle. If a global Write is conducted, the data presented to
the DQx is written into the corresponding address location in
the RAM core. If a byte Write is conducted, only the selected
Document #: 38-05196 Rev. **
bytes are written. Bytes not selected during a byte Write
operation will remain unaltered. All I/Os are three-stated
during a byte Write because the CY7C1381B/CY7C1383B is
a common I/O device, the OE must be deasserted HIGH
before presenting data to the DQx inputs. Doing so will
three-state the output drivers. As a safety precaution, DQx are
automatically three-stated whenever a Write cycle is detected,
regardless of the state of OE.
Burst Sequences
The CY7C1381B/CY7C1383B provides a two-bit wraparound
counter fed by A[1:0] that implements either an interleaved or
linear burst sequence to support processors that follow a linear
burst sequence. The burst sequence is user-selectable
through MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both Read and Write burst operations are supported.
Interleaved Burst Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
A[1:0]
A[1:0]
A[1:0]
A[1:0]
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
A[1:0]
A[1:0]
A[1:0]
A[1:0]
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ HIGH
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. Chip Enable (CE1, CE2, CE3, on TQFP, CE1
on BGA), ADSP and ADSC must remain inactive for the
duration of tZZREC after the ZZ input returns LOW. Leaving ZZ
unconnected defaults the device into an active state.
Page 8 of 31
CY7C1381B
CY7C1383B
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
ICCZZ
Sleep mode standby current
tZZS
Device operation to ZZ
tZZREC
ZZ recovery time
Min.
Max.
Unit
ZZ < VDD – 0.2V
20
mA
ZZ < VDD – 0.2V
2tCYC
ns
ZZ ≤ 0.2V
2tCYC
ns
Cycle Descriptions[1, 2, 3]
Next Cycle
Add. Used
ZZ
CE3
CE2
CE1
ADSP
ADSC
ADV
OE
DQ
Write
Unselected
None
0
X
X
1
X
0
X
X
Hi-Z
X
Unselected
None
0
1
X
0
0
X
X
X
Hi-Z
X
Unselected
None
0
X
0
0
0
X
X
X
Hi-Z
X
Unselected
None
0
1
X
0
1
0
X
X
Hi-Z
X
Unselected
None
0
X
0
0
1
0
X
X
Hi-Z
X
Begin Read
External
0
0
1
0
0
X
X
X
Hi-Z
X
Begin Read
External
0
0
1
0
1
0
X
X
Hi-Z
Read
Continue Read
Next
0
X
X
X
1
1
0
1
Hi-Z
Read
Continue Read
Next
0
X
X
X
1
1
0
0
DQ
Read
Continue Read
Next
0
X
X
1
X
1
0
1
Hi-Z
Read
Continue Read
Next
0
X
X
1
X
1
0
0
DQ
Read
Suspend Read
Current
0
X
X
X
1
1
1
1
Hi-Z
Read
Suspend Read
Current
0
X
X
X
1
1
1
0
DQ
Read
Suspend Read
Current
0
X
X
1
X
1
1
1
Hi-Z
Read
Suspend Read
Current
0
X
X
1
X
1
1
0
DQ
Read
Begin Write
Current
0
X
X
X
1
1
1
X
Hi-Z
Write
Begin Write
Current
0
X
X
1
X
1
1
X
Hi-Z
Write
Begin Write
External
0
0
1
0
1
0
X
X
Hi-Z
Write
Continue Write
Next
0
X
X
X
1
1
0
X
Hi-Z
Write
Continue Write
Next
0
X
X
1
X
1
0
X
Hi-Z
Write
Suspend Write
Current
0
X
X
X
1
1
1
X
Hi-Z
Write
Suspend Write
Current
0
X
X
1
X
1
1
X
Hi-Z
Write
ZZ “sleep”
None
1
X
X
X
X
X
X
X
Hi-Z
X
Note:
1. X = ”Don't Care”, 1 = HIGH, 0 = LOW.
2. The SRAM always initiates a Read cycle when ADSP asserted, regardless of the state of GW, BWE, or BWx. Writes may occur only on subsequent clocks
after the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the Write cycle to allow the outputs to three-state.
OE is a “Don't Care” for the remainder of the Write cycle.
3. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle, DQ = High-Z when OE is inactive
or when the device is deselected, and DQ = data when OE is active.
Document #: 38-05196 Rev. **
Page 9 of 31
CY7C1381B
CY7C1383B
Write Cycle Description[1, 2, 3]
Function (CY7C1381B)
GW
BWE
BWd
BWc
BWb
BWa
Read
1
1
X
X
X
X
Read
1
0
1
1
1
1
Write Byte 0 – DQa
1
0
1
1
1
0
Write Byte 1 – DQb
1
0
1
1
0
1
Write Bytes 1, 0
1
0
1
1
0
0
Write Byte 2 – DQc
1
0
1
0
1
1
Write Bytes 2, 0
1
0
1
0
1
0
Write Bytes 2, 1
1
0
1
0
0
1
Write Bytes 2, 1, 0
1
0
1
0
0
0
Write Byte 3 – DQd
1
0
0
1
1
1
Write Bytes 3, 0
1
0
0
1
1
0
Write Bytes 3, 1
1
0
0
1
0
1
Write Bytes 3, 1, 0
1
0
0
1
0
0
Write Bytes 3, 2
1
0
0
0
1
1
Write Bytes 3, 2, 0
1
0
0
0
1
0
Write Bytes 3, 2, 1
1
0
0
0
0
1
Write All Bytes
1
0
0
0
0
0
Write All Bytes
0
X
X
X
X
X
Function (CY7C1383B)
Read
GW
BWE
BWb
BWa
1
1
X
X
Read
1
0
1
1
Write Byte 0 – DQa and DPa
1
0
1
0
Write Byte 1 – DQb and DPb
1
0
0
1
Write All Bytes
1
0
0
0
Write All Bytes
0
X
X
X
Document #: 38-05196 Rev. **
Page 10 of 31
CY7C1381B
CY7C1383B
IEEE 1149.1 Serial Boundary Scan (JTAG)
The CY7C1381B/CY7C1383B incorporates a serial boundary
scan TAP in the FBGA package only. The TQFP package does
not offer this functionality. This port operates in accordance
with IEEE Standard 1149.1–1900, but does not have the set
of functions required for full 1149.1 compliance. These
functions from the IEEE specification are excluded because
their inclusion places an added delay in the critical speed path
of the SRAM. Note that the TAP controller functions in a
manner that does not conflict with the operation of other
devices using 1149.1 fully compliant TAPs. The TAP operates
using JEDEC standard 3.3V I/O logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller , TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should
be left unconnected. Upon power-up, the device will come up
in a reset state which will not interfere with the operation of the
device.
Test Access Port – Test Clock
The test clock is used only with the TAP controller. All inputs
are captured on the rising edge of TCK. All outputs are driven
from the falling edge of TCK.
Test Mode Select
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to
leave this pin unconnected if the TAP is not used. The pin is
pulled up internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the
registers and can be connected to the input of any of the
registers. The register between TDI and TDO is chosen by the
instruction that is loaded into the TAP instruction register. For
information on loading the instruction register, see the TAP
Controller State Diagram. TDI is internally pulled up and can
be unconnected if the TAP is unused in an application. TDI is
connected to the most significant bit (MSB) on any register.
Test Data-Out (TDO)
The TDO output pin is used to serially clock data-out from the
registers. The e output is active depending upon the current
state of the TAP state machine (see TAP Controller State
Diagram). The output changes on the falling edge of TCK.
TDO is connected to the least significant bit (LSB) of any
register.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of
the SRAM and may be performed while the SRAM is
operating. At power-up, the TAP is reset internally to ensure
that TDO comes up in a high-Z state.
TAP Registers
Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test
Document #: 38-05196 Rev. **
circuitry. Only one register can be selected at a time through
the instruction registers. Data is serially loaded into the TDI pin
on the rising edge of TCK. Data is output on the TDO pin on
the falling edge of TCK.
Instruction Register
Three-bit instructions can be serially loaded into the instruction
register. This register is loaded when it is placed between the
TDI and TDO pins as shown in the TAP Controller Block
Diagram. Upon power-up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as
described in the previous section.
When the TAP controller is in the CaptureIR state, the two
least significant bits are loaded with a binary “01" pattern to
allow for fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain states. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the
SRAM with minimal delay. The bypass register is set LOW
(VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices. The ×36 configuration has a 70-bit-long
register, and the ×18 configuration has a 51-bit-long register.
The boundary scan register is loaded with the contents of the
RAM input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and
TDO pins when the controller is moved to the Shift-DR state.
The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the I/O ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSB of the register is connected
to TDI, and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired
into the SRAM and can be shifted out when the TAP controller
is in the Shift-DR state. The ID register has a vendor code and
other information described in the Identification Register
Definitions table.
TAP Instruction Set
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the
Instruction Code table. Three of these instructions are listed
as RESERVED and should not be used. The other five instructions are described in detail below.
The TAP controller used in this SRAM is not fully compliant to
the 1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented. The TAP controller
cannot be used to load address, data or control signals into the
SRAM and cannot preload the I/O buffers. The SRAM does
Page 11 of 31
CY7C1381B
CY7C1383B
not implement the 1149.1 commands EXTEST or INTEST or
the PRELOAD portion of SAMPLE/PRELOAD; rather it
performs a capture of the I/O ring when these instructions are
executed.
When the SAMPLE/PRELOAD instructions loaded into the
instruction register and the TAP controller in the Capture-DR
state, a snapshot of data on the inputs and output pins is
captured in the boundary scan register.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed between
TDI and TDO. During this state, instructions are shifted
through the instruction register through the TDI and TDO pins.
To execute the instruction once it is shifted in, the TAP
controller needs to be moved into the Update-IR state.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 10 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because
there is a large difference in the clock frequencies, it is
possible that during the Capture-DR state, an input or output
will undergo a transition. The TAP may then try to capture a
signal while in transition (metastable state). This will not harm
the device, but there is no guarantee as to the value that will
be captured. Repeatable results may not be possible.
EXTEST
EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with all
0s. EXTEST is not implemented in the TAP controller, and
therefore this device is not compliant to the 1149.1 standard.
The TAP controller does recognize an all-0 instruction. When
an EXTEST instruction is loaded into the instruction register,
the SRAM responds as if a SAMPLE/PRELOAD instruction
has been loaded. There is one difference between the two
instructions. Unlike the SAMPLE/PRELOAD instruction,
EXTEST places the SRAM outputs in a High-Z state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and allows
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction
is loaded into the instruction register upon power-up or
whenever the TAP controller is given a test logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register
to be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High-Z state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so
the TAP controller is not fully 1149.1 compliant.
Document #: 38-05196 Rev. **
To guarantee that the boundary scan register will capture the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture set-up plus
hold times (TCS and TCH). The SRAM clock input might not
be captured correctly if there is no way in a design to stop (or
slow) the clock during a SAMPLE/PRELOAD instruction. If this
is an issue, it is still possible to capture all other signals and
simply ignore the value of the CK and CK captured in the
boundary scan register.
Once the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP into the Update to the
Update-DR state while performing a SAMPLE/PRELOAD
instruction will have the same effect as the Pause-DR
command.
Bypass
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the bypass
register is placed between the TDI and TDO pins. The
advantage of the BYPASS instruction is that it shortens the
boundary scan path when multiple devices are connected
together on a board.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 12 of 31
CY7C1381B
CY7C1383B
TAP Controller State Diagram
1
TEST-LOGIC
RESET
1
0
TEST-LOGIC/
1
1
SELECT
IDLE
SELECT
DR-SCAN
IR-SCAN
0
0
1
1
CAPTURE-DR
CAPTURE-DR
0
0
SHIFT-DR
SHIFT-IR
0
1
0
1
1
EXIT1-DR
1
EXIT1-IR
0
0
0
PAUSE-DR
0
PAUSE-IR
1
1
0
0
EXIT2-DR
EXIT2-IR
1
1
UPDATE-DR
UPDATE-IR
1
1
0
0
Note:
4. Note: The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document #: 38-05196 Rev. **
Page 13 of 31
CY7C1381B
CY7C1383B
TAP Controller Block Diagram
0
Bypass Register
Selection
Selection
Circuitry
TDI
2
1
0
2
1
0
2
1
0
Circuitry
TDO
Instruction Register
31 30
29
.
.
Identification Register
x
.
.
.
.
Boundary Scan Register
TCK
TAP Controller
TMS
TAP Electrical Characteristics Over the Operating Range[5, 6]
Parameter
Description
Test Conditions
Min.
Max.
Unit
VOH1
Output HIGH Voltage
IOH = −4.0 mA
2.4
V
VOH2
Output HIGH Voltage
IOH = −100 µA
VDD – 0.2
V
VOL1
Output LOW Voltage
IOL = 8.0 mA
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
0.2
V
VIH
Input HIGH Voltage
1.7
VDD + 0.3
V
VIL
Input LOW Voltage
−0.5
0.7
V
IX
Input Load Current
−5
5
µA
5.
6.
GND ≤ VI ≤ VDDQ
All voltage referenced to Ground.
Overshoot: VIH(AC) < VDD + 1.5V for t < tTCYC / 2; undershoot: VIL (AC) < 0.5V for t < tTCYC/2; power-up: VIH < 2.6V and VDD < 2.4V and VDDQ < 1.4V for t <
200 ms.
Document #: 38-05196 Rev. **
Page 14 of 31
CY7C1381B
CY7C1383B
TAP AC Switching Characteristics Over the Operating Range[7, 8]
Parameters
Description
Min.
Max
Unit
10
MHz
tTCYC
TCK Clock Cycle Time
tTF
TCK Clock Frequency
100
ns
tTH
TCK Clock HIGH
40
ns
tTL
TCK Clock LOW
40
ns
tTMSS
TMS Set-up to TCK Clock Rise
10
ns
tTDIS
TDI Set-up to TCK Clock Rise
10
ns
tCS
Capture Set-up to TCK Rise
10
ns
tTMSH
TMS Hold after TCK Clock Rise
10
ns
tTDIH
TDI Hold after Clock Rise
10
ns
tCH
Capture Hold after Clock Rise
10
ns
Set-up Times
Hold Times
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock HIGH to TDO Invalid
20
0
ns
ns
Notes:
7. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
8. Test conditions are specified using the load in TAP AC test conditions. Tr / Tf = 1 ns.
Document #: 38-05196 Rev. **
Page 15 of 31
CY7C1381B
CY7C1383B
TAP Timing and Test Conditions
1.25V
50Ω
ALL INPUT PULSES
TDO
3.3V
Z0 = 50Ω
1.50V
CL = 20 pF
0V
GND
(a)
tTH
tTL
Test Clock
TCK
tTCYC
tTMSS
tTMSH
Test Mode Select
TMS
tTDIS
tTDIH
Test Data-In
TDI
Test Data-Out
TDO
tTDOV
Document #: 38-05196 Rev. **
tTDOX
Page 16 of 31
CY7C1381B
CY7C1383B
Identification Register Definitions
Instruction Field
512K × 36
Revision Number (31:28)
1M × 18
Description
xxxx
xxxx
Device Depth (27:23)
00111
01000
Reserved for version number.
Defines depth of SRAM. 512K or 1M
Device Width (22:18)
00100
00011
Defines with of the SRAM. ×36 or ×18
Cypress Device ID (17:12)
xxxxx
xxxxx
Reserved for future use.
Cypress JEDEC ID (11:1)
00011100100
00011100100
ID Register Presence (0)
1
1
Allows unique identification of SRAM vendor.
Indicate the presence of an ID register.
Scan Register Sizes
Register Name
Bit Size (×18)
Bit Size (×36)
Instruction
3
3
Bypass
1
1
ID
32
32
Boundary Scan
51
70
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures the I/O ring contents. Places the boundary scan register
between the TDI and TDO. Forces all SRAM outputs to High-Z state. This
instruction is not 1149.1-compliant.
IDCODE
001
Loads the ID register with the vendor ID code and places the register
between TDI and TDO. This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the I/O contents. Places the boundary scan register between TDI
and TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use. This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. This instruction
does not implement 1149.1 preload function and is therefore not
1149.1-compliant.
RESERVED
101
Do Not Use. This instruction is reserved for future use.
RESERVED
110
Do Not Use. This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does
not affect SRAM operation.
Document #: 38-05196 Rev. **
Page 17 of 31
CY7C1381B
CY7C1383B
Boundary Scan Order (512K × 18)
Bit #
Signal
Name
Bump
ID
Signal
Name
Bit #
Boundary Scan Order (1M × 18)
Bump
ID
Bit #
Signal
Name
Bump
ID
Signal
Name
Bit #
Bump
ID
1
A
2R
36
A
6B
1
A
2R
36
DQb
2E
2
A
3T
37
BWa#
5L
2
A
2T
37
DQb
2G
3
A
4T
38
BWb#
5G
3
A
3T
38
DQb
1H
4
A
5T
39
BWc#
3G
4
A
5T
39
NC
5R
5
A
6R
40
BWd#
3L
5
A
6R
40
DQb
2K
6
A
3B
41
A
2B
6
A
3B
41
DQb
1L
7
A
5B
42
CE#
4E
7
A
5B
42
DQb
2M
8
DQa
6P
43
A
3A
8
DQa
7P
43
DQb
1N
9
DQa
7N
44
A
2A
9
DQa
6N
44
DQb
2P
10
DQa
6M
45
DQc
2D
10
DQa
6L
45
MODE
3R
11
DQa
7L
46
DQc
1E
11
DQa
7K
46
A
2C
12
DQa
6K
47
DQc
2F
12
ZZ
7T
47
A
3C
13
DQa
7P
48
DQc
1G
13
DQa
6H
48
A
5C
14
DQa
6N
49
DQc
1D
14
DQa
7G
49
A
6C
15
DQa
6L
50
DQc
1D
15
DQa
6F
50
A1
4N
16
DQa
7K
51
DQc
2E
16
DQa
7E
51
A0
4P
17
ZZ
7T
52
DQc
2G
17
DQa
6D
18
DQb
6H
53
DQc
1H
18
A
6T
19
DQb
7G
54
NC
5R
19
A
6A
20
DQb
6F
55
DQd
2K
20
A
5A
21
DQb
7E
56
DQd
1L
21
ADV#
4G
22
DQb
6D
57
DQd
2M
22
ADSP#
4A
23
DQb
7H
58
DQd
1N
23
ADSC#
4B
24
DQb
6G
59
DQd
2P
24
OE#
4F
25
DQb
6E
60
DQd
1K
25
BWE#
4M
26
DQb
7D
61
DQd
2L
26
GW#
4H
27
A
6A
62
DQd
2N
27
CLK
4K
28
A
5A
63
DQd
1P
28
A
6B
29
ADV#
4G
64
MODE
3R
29
BWa#
5L
30
ADSP#
4A
65
A
2C
30
BWb#
3G
31
ADSC#
4B
66
A
3C
31
A
2B
32
OE#
4F
67
A
5C
32
CE#
4E
33
BWE#
4M
68
A
6C
33
A
3A
34
GW#
4H
69
A1
4N
34
A
2A
35
CLK
4K
70
A0
4P
35
DQb
1D
Document #: 38-05196 Rev. **
Page 18 of 31
CY7C1381B
CY7C1383B
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ..................................... −55°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on VDD Relative to GND.........−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State[9])................................ −0.5V to VDDQ + 0.5V
DC Input Voltage[9] ..................................−0.5V to VDDQ + 0.5V
Current into Outputs (LOW) .........................................20 mA
Static Discharge Voltage .......................................... >1500V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA
Operating Range
Ambient
Temp[10]
Range
Commercial
Industrial
0°C to +70°C
–40°C to +85°C
VDD
VDDQ
3.3V
2.5V – 5%
–5% / +10% 3.3V + 10%
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
Min.
Max.
Unit
VDD
Power Supply Voltage
3.135
3.63
V
VDDQ
I/O Supply Voltage
2.375
3.63
V
VOH
Output HIGH Voltage
VOL
VIH
VIL
IX
Output LOW Voltage
VDD = Min., IOH = –1.0 mA
VDDQ = 2.5V
2.0
V
VDD = Min., IOH = –4.0 mA
VDDQ = 3.3V
2.4
V
VDD = Min., IOL = 1.0 mA
VDDQ = 2.5V
0.4
V
VDD = Min., IOL = 8.0 mA
VDDQ = 3.3V
0.4
V
Input HIGH Voltage
Input LOW Voltage
Input Load Current
VDDQ = 3.3 V
2
V
VDDQ = 2.5V
1.7
V
VDDQ = 3.3V
–0.3
0.8
V
VDDQ = 2.5V
–0.3
0.7
V
5
µA
–30
30
µA
–30
30
µA
5
µA
8.5-ns cycle, 117 MHz
250
mA
10-ns cycle, 100 MHz
225
mA
GND < VI < VDDQ
Input Current of MODE
Input Current of ZZ
Input = VSS
IOZ
Output Leakage
Current
GND < VI < VDDQ, Output Disabled
IDD
VDD Operating Supply
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
ISB1
Automatic CE
Power-Down
Current—TTL Inputs
12-ns cycle, 83 MHz
185
mA
Max. VDD, Device
Deselected,
VIN > VIH or VIN < VIL
f = fMAX = 1/tCYC
8.5-ns cycle, 117 MHz
100
mA
10-ns cycle, 100 MHz
90
mA
12-ns cycle, 83 MHz
75
mA
ISB2
Automatic CE
Power-Down
Current—CMOS Inputs
Max. VDD, Device
Deselected, VIN < 0.3V or VIN
> VDDQ – 0.3V,
f=0
All speed grades
20
mA
ISB3
Automatic CE
Power-Down
Current—CMOS Inputs
Max. VDD, Device
Deselected, or VIN < 0.3V or
VIN > VDDQ – 0.3V
f = fMAX = 1/tCYC
8.5-ns cycle, 117 MHz
90
mA
10-ns cycle, 100 MHz
75
mA
12-ns cycle, 83 MHz
60
mA
Max. VDD, Device
Deselected,
VIN > VIH or VIN < VIL, f = 0
All speeds
50
mA
ISB4
Automatic CS
Power-Down
Current—TTL Inputs
Notes:
9. Minimum Voltage equals -2.0V for pulse duration of less than 20ns.
10. TA is the case temperature.
Document #: 38-05196 Rev. **
Page 19 of 31
CY7C1381B
CY7C1383B
Capacitance[11]
Parameter
Description
Test Conditions
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CI/O
Input/Output Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V,
VDDQ = 3.3V
Max.
Unit
3
pF
3
pF
3
pF
AC Test Loads and Waveforms
R = 1667Ω
VDDQ
OUTPUT
ALL INPUT PULSES
OUTPUT
Z0 = 50Ω
RL = 50Ω
VDD
10%
5 pF
(a)
INCLUDING
JIG AND
SCOPE
90%
10%
90%
GND
R = 1538Ω
< 1V/ns
VTH= 1.25V
[12]
< 1 V/ns
(c)
(b)
Thermal Resistance[11]
Description
119 BGA
165 FBGA
100-pin TQFP
Test Conditions
QJA
(Junction to Ambient)
QJC
(Junction to Case)
Units
41.54
6.33
°C/W
44.51
2.38
°C/W
25
9
°C/W
Still Air, soldered on a 114.3 × 101.6 × 1.57 mm3,
2-layer board
Still Air, soldered on a 4.25 × 1.125 inch, 4-layer
printed circuit board
Notes:
11. Tested initially and after any design or process changes that may affect these parameters.
12. Input waveform should have a slew rate of 1 V/ns.
Document #: 38-05196 Rev. **
Page 20 of 31
CY7C1381B
CY7C1383B
Switching Characteristics Over the Operating Range[13, 14, 15]
–117
Parameter
Description
Min.
–100
Max.
Min.
Max.
–83
Min.
Max.
Unit
tCYC
Clock Cycle Time
8.5
10.0
12.0
ns
tCH
Clock HIGH
2.3
2.5
3.0
ns
tCL
Clock LOW
2.3
2.5
3.0
ns
tAS
Address Set-Up Before CLK Rise
1.5
1.5
1.5
ns
tAH
Address Hold After CLK Rise
0.5
0.5
0.5
ns
tCO
Data Output Valid After CLK Rise
tDOH
Data Output Hold After CLK Rise
1.5
1.5
1.5
ns
tADS
ADSP, ADSC Set-Up Before CLK Rise
1.5
1.5
1.5
ns
tADH
ADSP, ADSC Hold After CLK Rise
0.5
0.5
0.5
ns
tWES
BWE, GW, BWx Set-Up Before CLK Rise
1.5
1.5
1.5
ns
tWEH
BWE, GW, BWx Hold After CLK Rise
0.5
0.5
0.5
ns
tADVS
ADV Set-Up Before CLK Rise
1.5
1.5
1.5
ns
tADVH
ADV Hold After CLK Rise
0.5
0.5
0.5
ns
tDS
Data Input Set-Up Before CLK Rise
1.5
1.5
1.5
ns
tDH
Data Input Hold After CLK Rise
0.5
0.5
0.5
ns
tCES
Chip enable Set-Up
1.5
1.5
1.5
ns
tCEH
Chip enable Hold After CLK Rise
0.5
0.5
0.5
ns
tCHZ
tCLZ
[13]
Clock to High-Z
8.5
3.0
[13]
Clock to Low-Z
1.3
[13, 14]
tEOHZ
OE HIGH to Output High-Z
tEOLZ
OE LOW to Output Low-Z[13, 14]
tEOV
7.5
[13]
OE LOW to Output Valid
3.0
1.3
4.0
0
3.0
1.3
4.0
0
3.4
10.0
ns
ns
4.0
0
3.8
ns
ns
ns
4.2
ns
Notes:
13. Unless otherwise noted, test conditions assume signal transition time of 2.5 ns or less, timing reference levels of 1.25V, input pulse levels of 0 to 2.5V, and
output loading of the specified IOL/IOH and load capacitance. Shown in (a), (b) and (c) of AC Test Loads.
14. tCHZ, tCLZ, tOEV, tEOLZ, and tEOHZ are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state
voltage.
15. At any given voltage and temperature, tEOHZ is less than tEOLZ and tCHZ is less than tCLZ.
Document #: 38-05196 Rev. **
Page 21 of 31
CY7C1381B
CY7C1383B
1
Switching Waveforms
Write Cycle Timing[16, 17]
Burst Write
Single Write
Pipelined Write
Unselected
tCH
tCYC
CLK
tADH
tADS
tCL
ADSP ignored with CE1 inactive
ADSP
tADH
tADS
ADSC initiated Write
ADSC
tADVH
tADVS
ADV
tAS
ADD
ADV must be inactive for ADSP Write
WD1
WD3
WD2
tAH
GW
tWS
tWH
BWE
tCES
tWH
tWS
tCEH
CE1 masks ADSP
CE1
tCES
tCEH
Unselected with CE2
CE2
CE3
tCES
tCEH
OE
tDH
tDS
Data-In
High-Z
1a
1a
2a
= Undefined
2b
2c
2d
3a
High-Z
Don’t Care
Notes:
16. WE is the combination of BWE, BWx, and GW to define a Write cycle (see Write Cycle Descriptions table).
17. WDx stands for Write Data to Address X.
Document #: 38-05196 Rev. **
Page 22 of 31
CY7C1381B
CY7C1383B
Switching Waveforms (continued)
Read Cycle Timing[16, 18]
Burst Read
Single Read
Unselected
tCH
tCYC
Pipelined Read
CLK
tADH
tADS
tCL
ADSP ignored with CE1 inactive
ADSP
tADS
ADSC initiated Read
ADSC
tADVS
tADH
Suspend Burst
ADV
tADVH
tAS
ADD
RD1
RD3
RD2
tAH
GW
tWS
tWS
tWH
BWE
tCES
tCEH
tWH
CE1 masks ADSP
CE1
Unselected with CE2
CE2
tCES
tCEH
CE3
tCES
OE
Data Out
tCEH
tEOV
tCDV
tOEHZ
tDOH
2a
1a
1a
2b
2c 2c
2d
3a
tCLZ
tCHZ
= Don’t Care
= Undefined
Note:
18. RDx stands for Read Data from Address X.
Document #: 38-05196 Rev. **
Page 23 of 31
CY7C1381B
CY7C1383B
Switching Waveforms (continued)
Read/Write Cycle Timing[16, 17, 18]
Read/Write Timing
tCYC
tCH
tCL
CLK
tAH
tAS
ADD
A
B
D
C
tADH
tADS
ADSP
tADH
tADS
ADSC
tADVS
tADVH
ADV
tCEH
tCES
CE1
tCEH
tCES
CE
tWEH
tWES
BWE
ADSP ignored
with CE1 HIGH
OE
tEOHZ
tCLZ
Data
In/Out
Q(A)
Q(B)
Q
Q
(B+1) (B+2)
Q
(B+3)
Q(B)
D(C)
D
(C+1)
D
(C+2)
D
(C+3)
Q(D)
tCDV
tDOH
tCHZ
Device originally
deselected
WE is the combination of BWE, BWx, and GW to define a Write cycle (see Write cycle description table).
CE is the combination of CE2 and CE3. All chip selects need to be active in order to select
the device. RAx stands for Read Address X, WAx stands for Write Address X, Dx stands for Data-in X,
Qx stands for Data-out X.
= Don’t Care
Document #: 38-05196 Rev. **
= Undefined
Page 24 of 31
CY7C1381B
CY7C1383B
Switching Waveforms (continued)
Back to Back Read/Write Timing[19, 20]
tCH
tCYC
tCL
CLK
tAS
RD1
ADD
tADS
RD2
RD3
WD1
RD4
WD2
WD3
WD4
tADH
ADSC initiated Reads
ADSC
ADSP initiated Reads
ADSP
ADV
tCEH
tCES
CE1
CE
tWEH
tWES
BWE
ADSP ignored
with CE1 HIGH
OE
tCLZ
Data In/Out
1a
Out
2a
Out
3a
Out
4a
Out
1a
In
2a
In
3a
In
4a
D(C)
In
tCDV
tDOH
Back-to-Back Reads
tCHZ
Back-to-Back Writes
= Don’t Care
= Undefined
Notes:
19. Device originally deselected.
20. CE is the combination of CE2 and CE3. All chip selects need to be active in order to select the device.
Document #: 38-05196 Rev. **
Page 25 of 31
CY7C1381B
CY7C1383B
Switching Waveforms (continued)
OE Switching Waveforms
OE
tEOV
tEOHZ
Three-State
I/Os
tEOLZ
ZZ Mode Timing [19, 21]
CLK
ADSP
HIGH
ADSC
CE1
CE2
LOW
HIGH
CE3
ZZ
tZZS
ICC
ICC(active)
tZZREC
ICCZZ
I/Os
Three-state
Note:
21. I/Os are in three-state when exiting ZZ sleep mode.
Document #: 38-05196 Rev. **
Page 26 of 31
CY7C1381B
CY7C1383B
Ordering Information
Speed
(MHz)
117
100
83
100
83
Ordering Code
CY7C1381B-117AC
CY7C1383B-117AC
Package
Name
A101
CY7C1381B-117BGC
CY7C1383B-117BGC
BG119
CY7C1381B-117BZC
CY7C1383B-117BZC
BA165A
CY7C1381B-100AC
CY7C1383B-100AC
A101
CY7C1381B-100BGC
CY7C1383B-100BGC
BG119
CY7C1381B-100BZC
CY7C1383B-100BZC
BA165A
CY7C1381B-83AC
CY7C1383B-83AC
A101
CY7C1381B-83BGC
CY7C1383B-83BGC
BG119
CY7C1381B-83BZC
CY7C1383B-83BZC
BA165A
CY7C1381B-100AI
CY7C1383B-100AI
A101
CY7C1381B-100BGI
CY7C1383B-100BGI
BG119
CY7C1381B-100BZI
CY7C1383B-100BZI
BA165A
CY7C1381B-83AI
CY7C1383B-83AI
A101
CY7C1381B-83BGI
CY7C1383B-83BGI
BG119
CY7C1381B-83BZI
CY7C1383B-83BZI
BA165A
Package Type
Operating
Range
100-Lead Thin Quad Flat Pack
Commercial
119 BGA
165 FBGA
100-Lead Thin Quad Flat Pack
119 BGA
165 FBGA
100-Lead Thin Quad Flat Pack
119 BGA
165 FBGA
100-Lead Thin Quad Flat Pack
Industrial
119 BGA
165 FBGA
100-Lead Thin Quad Flat Pack
119 BGA
165 FBGA
Shaded areas contain advance information.
Document #: 38-05196 Rev. **
Page 27 of 31
CY7C1381B
CY7C1383B
Pin Configurations
100-pin Thin Plastic Quad Flatpack (14 × 20 × 1.4 mm) A101
Document #: 38-05196 Rev. **
Page 28 of 31
CY7C1381B
CY7C1383B
Pin Configurations (continued)
119-lead FBGA (14 × 22 × 2.4 mm) BG119
Document #: 38-05196 Rev. **
Page 29 of 31
CY7C1381B
CY7C1383B
Pin Configurations (continued)
165-ball FBGA (13 × 15 × 1.2 mm) BB165A
All product and company names mentioned in this document are the trademarks of their respective holders.
Document #: 38-05196 Rev. **
Page 30 of 31
© Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C1381B
CY7C1383B
Revision History
Document Title: CY7C1381B/CY7C1383B 512K x36/1M x18 Flow-Thru SRAM
Document Number: 38-05196
REV.
ECN NO.
ISSUE
DATE
ORIG. OF
CHANGE
**
112032
12/09/01
DSG
Document #: 38-05196 Rev. **
DESCRIPTION OF CHANGE
Change from Spec number: 38-01077 to 38-05196
Page 31 of 31
Similar pages