Infineon IKP06N60T Low loss duopack : igbt in trench and fieldstop technology with soft, fast recovery anti-parallel emcon he diode Datasheet

IKP06N60T
p
TrenchStop series
Low Loss DuoPack : IGBT in Trench and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
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•
•
•
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Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 °C
Short circuit withstand time – 5µs
Designed for :
- Variable Speed Drive for washing machines, air
conditioners and induction cooking
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
PG-TO-220-3-1
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
Low EMI
Very soft, fast recovery anti-parallel EmCon HE diode
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IKP06N60T
VCE
IC;Tc=100°C VCE(sat),Tj=25°C
600V
6A
1.5V
G
Tj,max
Marking
Package
175°C
K06T60
PG-TO-220-3-1
E
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
VCE
DC collector current, limited by Tjmax
TC = 25°C
TC = 100°C
IC
Pulsed collector current, tp limited by Tjmax
ICpul s
18
Turn off safe operating area
-
18
600
Unit
V
A
12
6
VCE ≤ 600V, Tj ≤ 175°C
Diode forward current, limited by Tjmax
TC = 25°C
TC = 100°C
IF
Diode pulsed current, tp limited by Tjmax
IFpul s
18
Gate-emitter voltage
VGE
±20
V
tSC
5
µs
Power dissipation
TC = 25°C
Ptot
88
W
Operating junction temperature
Tj
-40...+175
°C
Storage temperature
Tstg
-55...+175
2)
Short circuit withstand time
12
6
VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
1
2)
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
K/W
Characteristic
IGBT thermal resistance,
junction – case
RthJC
1.7
Diode thermal resistance,
junction – case
RthJCD
2.6
Thermal resistance,
junction – ambient
RthJA
62
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
600
-
-
T j =2 5 °C
-
1.5
2.05
T j =1 7 5° C
-
1.8
T j =2 5 °C
-
1.6
2.05
T j =1 7 5° C
-
1.6
-
4.1
4.6
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V ,
I C = 0. 25m A
Collector-emitter saturation voltage
VCE(sat)
VF
Diode forward voltage
Gate-emitter threshold voltage
VGE(th)
V
V G E = 15 V , I C = 6 A
V G E = 0V , I F = 6 A
I C = 0. 18m A ,
VCE=VGE
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
µA
T j =2 5 °C
-
-
40
T j =1 7 5° C
-
-
700
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 6 A
-
3.6
-
S
Integrated gate resistor
RGint
none
Ω
Dynamic Characteristic
V C E = 25 V ,
-
368
-
Coss
V G E = 0V ,
-
28
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
11
-
Gate charge
QGate
V C C = 48 0 V, I C =6 A
V G E = 15 V
-
42
-
nC
-
7
-
nH
-
55
-
A
Input capacitance
Ciss
Output capacitance
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
IC(SC)
V G E = 15 V ,t S C ≤ 5 µs
V C C = 4 0 0 V,
T j = 25 ° C
pF
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
9
-
-
6
-
-
130
-
-
58
-
-
0.09
-
-
0.11
-
-
0.2
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 40 0 V, I C = 6 A,
V G E = 0/ 15 V ,
R G = 23 Ω,
2)
L σ =6 0 nH ,
2)
C σ = 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
Diode reverse recovery time
trr
T j =2 5 °C ,
-
123
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 6 A,
-
190
-
nC
Diode peak reverse recovery current
Irrm
d i F / d t =5 5 0 A/ µs
-
5.3
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
450
-
A/µs
ns
mJ
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=175 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
9
-
-
8
-
-
165
-
-
84
-
-
0.14
-
-
0.18
-
-
0.335
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =1 7 5° C,
V C C = 40 0 V, I C = 6 A,
V G E = 0/ 15 V ,
R G = 2 3Ω
1)
L σ =6 0 nH ,
1)
C σ = 4 0p F
Energy losses include
“tail” and diode
reverse recovery.
Diode reverse recovery time
trr
T j =1 7 5° C
-
180
-
ns
Diode reverse recovery charge
Qrr
V R = 4 00 V , I F = 6 A,
-
500
-
nC
Diode peak reverse recovery current
Irrm
d i F / d t =5 5 0 A/ µs
-
7.6
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
285
-
A/µs
ns
mJ
Anti-Parallel Diode Characteristic
2)
1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
Power Semiconductors
3
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
tp=1µs
10A
15A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
18A
T C =80°C
12A
T C =110°C
9A
6A
Ic
3A
Ic
5µs
10µs
50µs
1A
500µs
5ms
DC
0A
100Hz
1kHz
10kH z
0,1A
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 175°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 23Ω)
1000V
15A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C,
Tj ≤175°C;VGE=15V)
80W
60W
40W
20W
0W
25°C
10V
50°C
75°C
5A
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 175°C)
Power Semiconductors
10A
4
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≥ 15V, Tj ≤ 175°C)
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
15A
15A
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
V G E =20V
15V
12A
13V
11V
9A
9V
7V
6A
3A
11V
9A
9V
7V
6A
0A
0V
1V
2V
3V
0V
1 5A
1 2A
9A
6A
T J =1 75 °C
3A
25 °C
0V
2V
4V
6V
8V
1 0V
2V
3V
IC =12A
2,5V
2,0V
IC =6A
1,5V
1,0V
IC =3A
0,5V
0,0V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
Power Semiconductors
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
13V
3A
0A
0A
15V
12A
5
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
td(off)
100ns
tf
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
t d(on)
10ns
tf
td(on)
tr
10ns
tr
1ns
0A
3A
6A
9A
12A
1ns
15A
10Ω
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, RG = 23Ω,
Dynamic test circuit in Figure E)
tf
10ns
t d(on)
tr
1ns
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 6A, RG = 23Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
50Ω
70Ω
90Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t, SWITCHING TIMES
100ns td(off)
30Ω
6V
5V
m ax.
4V
typ.
3V
m in.
2V
1V
0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.18mA)
6
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
*) E on and E ts include losses
E ts *
0,5 mJ
0,4 mJ
0,3 mJ
E off
0,2 mJ
E on*
0,1 mJ
0,0 mJ 0A
2A
4A
6A
8A
0,4 mJ
0,3 mJ
E on*
0,2 mJ
E off
0,1 mJ
0,0 mJ
10A
10Ω
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=175°C,
VCE=400V, VGE=0/15V, RG=23Ω,
Dynamic test circuit in Figure E)
30Ω
55Ω
80Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, IC = 6A,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
*) E on and E ts include losses
due to diode recovery
0,5m J
E, SWITCHING ENERGY LOSSES
0,4mJ
E, SWITCHING ENERGY LOSSES
E ts*
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) E on and E ts include losses
due to diode recovery
0,6 mJ
0,3mJ
E ts *
0,2mJ
E off
0,1mJ
due to diode recovery
E ts *
0,4m J
0,3m J
E off
0,2m J
E on *
0,1m J
E on*
0,0mJ
50°C
100°C
0,0m J
200V
150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE = 0/15V, IC = 6A, RG = 23Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
300V
400V
500V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 6A, RG = 23Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
VGE, GATE-EMITTER VOLTAGE
1nF
C iss
c, CAPACITANCE
15V
120V
10V
48 0V
100pF
C oss
5V
C rss
10pF
0V
0nC
10 nC
20n C
30nC
40nC
50nC
0V
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 6 A)
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
80A
60A
40A
20A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 400V, Tj ≤ 150°C)
Power Semiconductors
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
ZthJC, TRANSIENT THERMAL RESISTANCE
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
10 K/W D=0.5
0
0.2
R,(K/W)
0.3837
0.4533
0.5877
0.2483
0.1
-1
0.05
10 K/W
τ, (s)
5.047*10-2
4.758*10-3
4.965*10-4
4.717*10-5
R1
0.02
0.01
R2
C 1 = τ 1 /R 1
C 2 = τ 2 /R 2
single pulse
-2
10 K/W
1µs
1ms
0.2
R,(K/W)
0.2520
0.4578
1.054
0.7822
0.1
0.05
R1
τ, (s)
4.849*10-2
1.014*10-2
1.309*10-3
1.343*10-4
R2
-1
10 K/W
0.02
0.01
C 1 = τ 1 /R 1
C 2 = τ 2 /R 2
single pulse
10 K/W
1µs
10m s 100m s
10µs 100µs
1ms
10m s 100m s
tP, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
250ns
0,5µC
Qrr, REVERSE RECOVERY CHARGE
trr, REVERSE RECOVERY TIME
10 K/W
-2
10µs 100µs
tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)
200ns
TJ=175°C
150ns
100ns
TJ=25°C
50ns
0ns
200A/µs
0
400A/µs
600A/µs
0,4µC
0,3µC
0,2µC
T J=25°C
0,1µC
0,0µC
200A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
Power Semiconductors
T J=175°C
9
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=400V, IF=6 A,
Dynamic test circuit in Figure E)
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
-500A/µs
8A
T J =25°C
6A
4A
2A
0A
200A/µs
400A/µs
600A/µs
dirr/dt, DIODE PEAK RATE OF FALL
OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
T J =175°C
-300A/µs
T J=175°C
-200A/µs
-100A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
10A
2,0V I F =12A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
-400A/µs
0A/µs
200A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR = 400V, IF = 6A,
Dynamic test circuit in Figure E)
8A
6A
4A
T J =175°C
2A
0A
T J=25°C
6A
1,5V
3A
1,0V
0,5V
25°C
0,0V
0V
1V
2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
Power Semiconductors
10
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
dimensions
TO-220AB
PG-TO220-3-1
symbol
[mm]
min
min
max
9.70
10.30
0.3819
0.4055
B
14.88
15.95
0.5858
0.6280
C
0.65
0.86
0.0256
0.0339
D
3.55
3.89
0.1398
0.1531
E
2.60
3.00
0.1024
0.1181
F
6.00
6.80
0.2362
0.2677
G
13.00
14.00
0.5118
0.5512
H
4.35
4.75
0.1713
0.1870
K
0.38
0.65
0.0150
0.0256
L
0.95
1.32
0.0374
0.0520
N
11
max
A
M
Power Semiconductors
[inch]
2.54 typ.
4.30
0.1 typ.
4.50
0.1693
0.1772
P
1.17
1.40
0.0461
0.0551
T
2.30
2.72
0.0906
0.1071
Rev. 2.2 May 06
IKP06N60T
p
TrenchStop series
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
τn
r2
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
an d Stray capacity C σ =40pF.
Figure B. Definition of switching losses
Power Semiconductors
12
Rev. 2.2 May 06
TrenchStop series
IKP06N60T
p
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 5/8/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.2 May 06
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